Untitled
Abstract: No abstract text available
Text: MGF1902B Transistors N-Channel UHF/Microwave MESFET V BR DSS (V) V(BR)GSS (V)-6.0 I(D) Max. (A)100m P(D) Max. (W)360m Maximum Operating Temp (øC)175 I(DSS) Min. (A)30m I(DSS) Max. (A)100m @V(DS) (V) (Test Condition)3.0 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.25
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MGF1902B
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2SC3355 SPICE MODEL
Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness
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F2002:
F2003:
F2004:
2SC3355 SPICE MODEL
transistor C2003
C319B
MGF1412
RF TRANSISTOR 10GHZ
MRF134 rf model .lib file
2SK571
MGF1402
MRF9331
pb_hp_at41411_19921101
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MGF1802
Abstract: mgf431 MGF43180 mitsubishi mgf MGF1902B-65
Text: MGF431OD Series L1~o- o~i -oqof- SUPER LOW NOISE InOaAs HEMT DESCRIPTION OUTLINE DRAWING The MGF431OD series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic package assures minimum parasitic losses, and has a
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MGF431OD
12GHz
MGF4314D:
MGF4316D:
MGF4317D:
MGF4318D:
12GHz
MGF4S17D-O1
MGF43I4E45.
MGF1802
mgf431
MGF43180
mitsubishi mgf
MGF1902B-65
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MGF1502
Abstract: MGF1412 MGF1601 mgf2116 MGF1802 MGF2124 MGF1404 MGF1405 MGF1902 MGF1501
Text: - 152 - m. MGF14Q3 MGF1404 MGF1405 MGF1412 MGF1413 MGF1414 MGF1423 MGF1425 MGF1501 MGF1502 MGF1601 MGF1801 MGF1802 MGF1902 MGFÎ903 MGF1904 MGF2116 MGF2117 MGF2124 MGF2124F MGF2124G MGF2148 MGF2148F MGF2148G MGF2172 MGF2205 MGF2407 MGF2407A MGF2415 MGF2415A
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MGF1403
MGF1404
MGF1405
MGF1412
MGF1413
12GHz
MGF2117
35MHz
MGF2124
MGF1502
MGF1601
mgf2116
MGF1802
MGF2124
MGF1902
MGF1501
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1902B TAPE CARRIER LOW NOISE GaAs FE T DESCRIPTION T h e M G F 1 9 0 2 B is a lo w noise GaAs FET w ith an N -c h a n n e l S c h o ttky gate, w hich is designed fo r use in S to X band am plifiers and oscillators. T he herm etically sealed m etalceramic
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MGF1902B
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mgf1903b
Abstract: MGF1403B MGF1402
Text: LOW NOISE GaAs FET M G F Ix x x x Series Typical Characteristics Type Froq. GHe NFmin. (dB| M V 11M MOF1302 MSF1303B M8F1323 MGF1402B MGF1412B MGF1403B MQF1423B MBF142SB MGF19028 MGF1903B MOF1923 4 4 12 12 12 12 12 12 12 12 12 12 1.4 1.2 1.8 101*1) <*1): P i dB(dBm)
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MOF1302
MSF1303B
M8F1323
MGF1402B
MGF1412B
MGF1403B
MQF1423B
MBF142SB
MGF19028
MGF1903B
MGF1402
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1902B TAPE CARRIER LOW NOISE GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 1 9 0 2 B isa lo w noise GaAs FET w ith an N-channel S chottky gate, which is designed fo r use in S to X band am plifiers and oscillators. The herm etically sealed metalceramic package assures m inim um parasitic losses, and
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MGF1902B
MGF1902B
GF1302.
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MGF1302
Abstract: MGF1902 MGF1902B 902b fet MGF1
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1902B TAPE CARRIER LOW NOISE GaAs FE T DESCRIPTION T h e M G F 1 9 0 2 B is a lo w noise G aAs FET w ith an N -c h a n n e l S c h o ttk y gate, w hich is designed fo r use in S to X band am plifiers and oscillators. T he h erm etically sealed m etalceram ic
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MGF1902B
MGF1902B
MGF1302.
12GHz
MGF1302
MGF1902
902b fet
MGF1
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1902B TAPE CARRIER LOW NOISE GaAs FET DESCRIPTION The MGF1 902 B is a low noise GaAs FET w ith an N-channel S chottky gate, which is designed fo r use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic losses, and
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MGF1902B
MGF1902B
MGF13Q2.
12GH2
30rnA
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MGF1402
Abstract: MGF1302 MGF1302-15 MGF1902B-65 MGFC1402 mgf*1302-15 MGFC1402-T03 mgf1302 p
Text: Die_ MG FC 1402 A Package m it s u b is h i ¡¡J ^ ][0 2 ELECTRONIC DEVICE GROUP M G F1902B DESCRIPTIO N FEATURES Devices in this family are constructed using the MG FC 1402 die. These devices are N-channel Schottky gate type and are suitable for use in
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F1902B
MGF1302/1402/1902B
MGF1902B
MGFC1402
MGF1302
MGF1402
MGF1902B
MGFC1402-T01
MGFC1402-T02
MGFC1402-T03
MGF1302-15
MGF1902B-65
mgf*1302-15
mgf1302 p
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MGF1200
Abstract: MGF4310 MGF1100 MGF1412 MGF4301 MGF1304 MGF7003 MGF1102 MGF1302 MGF4305A
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> SYMBOL ON PACKAGE EXAMPLE OF SYMBOL ON MICRO DISK PACKAGE W ithou t bottom bar w ith b o tto m bar Blue A p r. O o t. Orange M ay N ov. B lack June D ec. Red July Jan . Green A ug. Feb. Brown S ep. M a r. « L e f t side c h a ra c te r in d ic a te s th e type num ber.
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MGF1102
MGF1302
MGF1303B
MGFI323
MGF1402B
MGFI412B
MGF1403B
MGF1423B
MGFI425B
MGFI902B
MGF1200
MGF4310
MGF1100
MGF1412
MGF4301
MGF1304
MGF7003
MGF4305A
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MGF4919G
Abstract: MGF4919 mgf1903b MGF0907B 14512H mgf4316g MGFC45V2527 MGF1923 MGFC38V3642 MGF0904A
Text: lid GaAs FETs •GaAs FET SERIES FOR MICROWAVE-BAND LOW-NOISE AMPLIFIERS <Ta = 25-c> PT If f -6 mA ¡¡m i 100 360 < (GHe) ' (mA) f t 3 10 NFmin max (dB) Qs min (dB! 11 4 1.4 4 1.0 12 2.0 i I MGF1302 Vf l P -6 -6 -6 80 240 3 10 MGF1323 -6 -6 80 240 3 10
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MGF1302
MGF1303B
MGF1323
MGF14
MGF1412B
MGF1403B
MGF1423B
MGF1425B
MGF1902B
MGF1903B
MGF4919G
MGF4919
MGF0907B
14512H
mgf4316g
MGFC45V2527
MGF1923
MGFC38V3642
MGF0904A
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M52777SP
Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
Text: REFERENCE LIST T ype Page 2 S A 1 115 2SA1235 2 SA1235A 149 2 SC2237 *★ 2SA1282 2SA1282A 103 2 S C 5 1 25 149 2 S C 5 1 68 150 2 SC2320 150 2 SC 2320L 149 2 SC2538 2SA1283 2SA1284 2SA1285 149 2S C 2 6 03 149 2S C 2 6 27 2SA1285A 149 2 SC2628 2SA1286 153 AS 30
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2SA1115
2SA1235
2SA1235A
2SA1282
2SA1282A
2SA1283
2SA1284
2SA1285
2SA1285A
2SA1286
M52777SP
M54630P
M38881M2
m59320
57704L
M38173M6
SF15DXZ
M34236
m37204m8
54630p
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