LV2024E45R Search Results

LV2024E45R Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
LV2024E45R		Philips Semiconductors	NPN microwave power transistor		Original	PDF
LV2024E45R		Philips Semiconductors	Microwave Linear Power Transistor		Original	PDF
LV2024E45R		Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.		Historical	PDF
LV2024E45R		Philips Semiconductors	NPN microwave power transistor		Scan	PDF

LV2024E45R Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MSA101 Abstract: LV2024E45R SC15 2024E45R Text: DISCRETE SEMICONDUCTORS DATA SHEET LV2024E45R NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor	Original	PDF	LV2024E45R OT445A SCA53 127147/00/02/pp8 MSA101 LV2024E45R SC15 2024E45R
common emitter amplifier Abstract: b 342 d transistor Text: LV2024E45R NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The LV2024E45R is Designed for Class A Common Emitter Amplifier Applications to 2.3 GHz. FEATURES INCLUDE: • Replacement for Philips LV2024E45R • Gold Metalization • Emitter Ballasting PACKAGE STYLE .250 2L FLG	Original	PDF	LV2024E45R LV2024E45R ASI10472 common emitter amplifier b 342 d transistor
Y parameters of transistors Abstract: power transistor transistors equivalents transistor equivalent table MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor 2N2219 data sheet 1721E50R MARKING 41B transistor marking pl y1 marking code transistor similar 2N2219 transistor Text: Philips Semiconductors RF & Microwave Power Transistors General MARKING CODES FOR RF POWER TRANSISTORS MARKING CODES FOR MICROWAVE TRANSISTORS For the purposes of matched pair applications, RF power MOS transistors are marked with a code that indicates their gate-source voltage range see Table 8 .	Original	PDF	MC3403 2N2219 1N4148 MBC775 Y parameters of transistors power transistor transistors equivalents transistor equivalent table MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor 2N2219 data sheet 1721E50R MARKING 41B transistor marking pl y1 marking code transistor similar 2N2219 transistor
2024E45R Abstract: LV2024E45R SC15 MAM251 Text: Philips Semiconductors Product specification NPN microwave power transistor LV2024E45R FEATURES PINNING - SOT445A • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR	OCR Scan	PDF	LV2024E45R OT445A. 2024E45R LV2024E45R SC15 MAM251
IEC134 Abstract: LV2024E45R Text: N AMER PHILIPS/DISCRETE OLE » • fabS3^31 O O I M ^ S '' 0 I LV2024E45R MICROWAVE LINEAR POWER TRANSISTOR N-P-N silicon power transistor for use in a common-emitter, class-A amplifier from 2,0 GHz to 2,4 GHz in o.w. conditions in military and professional applications.	OCR Scan	PDF	LV2024E45R 7Z93418 bb53T31 T-33-cn IEC134 LV2024E45R
Untitled Abstract: No abstract text available Text: Philips Semiconductors Product specification NPN microwave power transistor LV2024E45R FEATURES PINNING - SOT445A • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR	OCR Scan	PDF	LV2024E45R OT445A
BPW22A Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8 Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey	OCR Scan	PDF	BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Philips Semiconductors Selection Guide Abstract: LTE42005S BLS2731-10 Text: SELECTION GUIDE Page Pulsed power transistors for radar 8 Pulsed power transistors for avionics 8 Linear power transistors 9 CW power transistors 10 Oscillator power transistors 10 Philips Semiconductors Microwave transistors Selection guide PULSED POWER TRANSISTORS FOR RADAR	OCR Scan	PDF	RX1214B80W RX1214B130Y RX1214B170W RX1214B300Y RX1214B350Y RZ1214B35Y RZ1214B65Y BLS2731-10 BLS2731-20 BLS2731 Philips Semiconductors Selection Guide LTE42005S
bf0262a Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94 Text: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A	OCR Scan	PDF	1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A bf0262a BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
transistor f6 13003 Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350 Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.	OCR Scan	PDF	SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
LFE15 Abstract: LAE4001R BLS2731-50 BLS2731-10 Text: Philips Semiconductors Microwave Transistors Index ALPHANUMERIC INDEX Types added to the range since the last issue of Handbook SC15 1995 issue are shown in bold print. TYPE PAGE TYPE PAGE BLS2731-10 30 PLB16012U 247 BLS2731-20 33 PLB16030U 252 BLS2731-50	OCR Scan	PDF	BLS2731-10 BLS2731-20 BLS2731-50 BLS2731-110 BLS2731-150 LBE2003S LBE2009S LFE15600X LLE15180xX LLE15370X LFE15 LAE4001R
Untitled Abstract: No abstract text available Text: Philips Semiconductors Concise Catalogue 1996 DISCRETE SEMICONDUCTORS Microwave transistors RF & MICROWAVE SEMICONDUCTORS & MODULES CONTINUOUS POWER TYPES f ^CE *C P r L1 ^ Gp° 3 GHz) (V) (mA) (mW) (dB) 1 2 2 2 2.1 2.1 2.1 2.3 2.3 4 4 4.2 4.2 4.2 20 18	OCR Scan	PDF	LEE1015TA LBE2003S LBE2009S LCE2009S LTE21009R LTE21015R LTE21025R LWE2010S LWE2015R LAE4001R
LTE-3201 Abstract: FO-163 lte4002s LBE2003S LBE2009S LCE2003S LCE2009S LTE21009R LUE2009S Text: N AMER P HILIPS/DISCRETE SSE D • t.bS3T31 D01fc,E32 S ■ T - 5 3-0/ 54 Power Devices MICROWAVE TRANSISTORS LINEAR POWER TRANSISTORS TYPE NO. f PACKAGE OUTLINE GHzv Vce m : ic (mAX - Gpo - ' ' P L l'” . (W (dB) CLASS A, MEDIUM POWER LAË6000Q LBE2003S	OCR Scan	PDF	bS3T31 D01fc 6000Q OT-100 LBE2003S FO-45 LCE2003S FO-46 LBE2009S LTE-3201 FO-163 lte4002s LCE2009S LTE21009R LUE2009S
BGY41 Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.	OCR Scan	PDF	LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc

Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE QbE D H ^53131 OOm^TS 0 • ' LV 2024E45R JV T -33-07 MICROWAVE LINEAR POWER TRANSISTOR N-P-N silicon power transistor fo r use in a common-emitter, class-A amplifier from 2,0 GHz to 2,4 GHz in c.w. conditions in m ilitary and professional applications.	OCR Scan	PDF	2024E45R LV2024E45R
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE E5E D btiS3131 DOltEBS S • T -Z S-O l Power Devices MICROWAVE TRANSISTORS LINEAR POWER TRANSISTORS TYPE NO. PACKAGE OUTLINE f Vce GHZ y f” Tc ' (mAX ' - - PL1<i. (W Gpo* (dB) CLASS A, MEDIUM POWER LAE6000Q LBE2003S LCE2003S	OCR Scan	PDF	btiS3131 LAE6000Q LBE2003S LCE2003S LBE2009S LCE2009S LUE2003S LUE2009S OT-100 FO-45
FO-229 Abstract: No abstract text available Text: 69 RF/Microwave Devices Microwave Transistors, Continuous Power cont. Type No Package Outline ' f " (GHz) (V\| PL1"> (W) Gpo<2) (dB) CLASS A, MEDIUM POWER (cont.) LA E4001R LA E4 002 S LTE4002S LTE42005S LTE42008R LTE42012R 4.0 4.0 4.0 4.2 4.2 4.2 15 18 18	OCR Scan	PDF	E4001R LTE4002S LTE42005S LTE42008R LTE42012R T-100 FO-41B FO-229
1721E50R Abstract: Marking Codes Philips MARKING CODE 2327E40R marking codes transistors LAE4001R transistor 502 r8 marking marking Code philips Text: Philips Semiconductors Microwave Transistors Marking codes MARKING CODES The microwave transistors in this book are normally marked with manufacturer’s name or trademark, type designation and lot identification code. If space on the transistor package is insufficient for full type designation, the following marking	OCR Scan	PDF	LAE4001R LAE4002S LBE2003S LBE2009S LCE2009S LEE1015T LTE21009R LTE21015R LTE21025R LTE42005S 1721E50R Marking Codes Philips MARKING CODE 2327E40R marking codes transistors transistor 502 r8 marking marking Code philips