LP0701 Search Results

LP0701

Abstract: LP0701LG LP0701N3 LP0701ND
Contextual Info: LP0701 Low Threshold P-Channel Enhancement-Mode Lateral MOSFET Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) VGS(th) (max) TO-92 SO-8 Die -16.5V 1.5Ω -1.25A -1.0V LP0701N3 LP0701LG LP0701ND Advanced MOS Technology Features

mosfet n3

Contextual Info: LP0701 P-Channel Enhancement-Mode Lateral MOSFET Features General Description ► ► ► ► ► ► ► These enhancement-mode normally-off transistors utilize a lateral MOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices

LP0701

Abstract: LP0701LG LP0701N3 LP0701ND
Contextual Info: LP0701 Low Threshold P-Channel Enhancement-Mode Lateral MOSFET Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) VGS(th) (max) TO-92 SO-8 Die -16.5V 1.5Ω -1.25A -1.0V LP0701N3 LP0701LG LP0701ND Features Advanced MOS Technology

to-92 mosfet 1A

Abstract: LP0701N3 low vgs mosfet to-92 mosfet 1A to-92 LP0701 LP0701LG LP0701ND
Contextual Info: LP0701 LP0701 Low Threshold P-Channel Enhancement-Mode Lateral MOSFET Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) VGS(th) (max) TO-92 SO-8 Dice -16.5V 1.5Ω -1.25A -1.0V LP0701N3 LP0701LG LP0701ND 7 Advanced MOS Technology

LP0701

Contextual Info: LP0701 Die Specification Pad Layout 1 2 3 0,0 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness (mils) Back Side Metal 50 70 11 ± 1.5 None 1 (mils) LP0701 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain

Contextual Info: ^ . LP07 Supertex inc P-Channel Enhancement-Mode Lateral MOSFET Ordering Information BVDSS / BV p DGS DS ON *D(ON) (max) (min) V GS(th) (max) 1.50 -1-25A -1.0V -16.5V Order Number / Package TO-92 LP0701N3 Features DICE LP0701ND Advanced MOS Technology Ultra low threshold

LP0701

Contextual Info: Supertex inc. LP0701 Die Specification Pad Layout 1 2 3 0,0 Backside: Drain Die Specifications Die Dimensions Device Length1 Width1 Thickness (mils) Back Side Metal 50 70 11 ± 1.5 None (mils) LP0701 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si

TP0610T

Abstract: SOT-89 N2 N2 SOT-23 sot-89 VP0109 LP0701 TP0604 TP0606 TP0620 TP2104
Contextual Info: Selector Guide P-Channel Enhancement Mode MOSFETs Device LP0701 BVDSS V -16.5 RDS(ON) max ID(ON) min CISS max VGS(TH) max (Ω) (A) (pF) (V) 1.5 -1.25 250 -1.0 Package Options Application Notes 3-Lead TO-92 (N3) AN-D14 8-Lead SOIC (LG) - 3-Lead TO-92 (N3)

BV 726 C

Abstract: BV 724 C
Contextual Info: LP0701 Supertex inc. Low Threshold P-Channel Enhancement-Mode Lateral MOSFET Ordering Information BV / BVDGS Order Number / Package DS ON '□(ON) (max) (min) VGS(ttl) (max) TO-92 SO-8 Die 1.5U -1.25A -1.0V LP0701N3 LP0701LG LP0701ND D -16.5V Features Advanced MOS Technology

Contextual Info: LP0701 inc. P-Channel Enhancement-Mode Lateral MOSFET Ordering Information BV DSS / BV ° ¥ dgs p Order Number / Package max (min) V GS(th) (max) TO-92 SO-8 □ice 1 .5 ÌÌ -1.25A -1.0V LP0701N3 LP0701LG LP0701ND DS(ON) -16.5V '[>(ON) Features □ Ultra low threshold

Contextual Info: LP0701 1 ni« ThrashnM P-Channel Enhancement-Mode Lateral MOSFET BV DSS / BV DGS D DS ON (max) -16.5V If Ordering Information 1.5Q -1.25A Order Number / Package V GS(th) (max) TO-92 SO-8 Dice -1.0V LP0701N3 LP0701LG LP0701ND WÂ Features Advanced MOS Technology

Contextual Info: Supertex inc. LP0701 P-Channel Enhancement-Mode Lateral MOSFET Features General Description These enhancement-mode normally-off transistors utilize a lateral MOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices

LP0701LG-G

Abstract: 125OC LP0701 JEDEC drawing
Contextual Info: Supertex inc. LP0701 P-Channel Enhancement-Mode Lateral MOSFET Features General Description ► ► ► ► ► ► ► These enhancement-mode normally-off transistors utilize a lateral MOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices

b0715

Contextual Info: Supertex inc. LP0701 P-Channel Enhancement-Mode Lateral MOSFET Features General Description ►► Ultra-low threshold ►► High input impedance ►► Low input capacitance ►► Fast switching speeds ►► Low on-resistance ►► Freedom from secondary breakdown

125OC

Abstract: LP0701
Contextual Info: LP0701 P-Channel Enhancement-Mode Lateral MOSFET Features General Description ► ► ► ► ► ► ► These enhancement-mode normally-off transistors utilize a lateral MOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices

Contextual Info: LP0701 P-Channel Enhancement-Mode Lateral MOSFET Features General Description ► ► ► ► ► ► ► These enhancement-mode normally-off transistors utilize a lateral MOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices

Contextual Info: LP0701 Supertex inc. Low Threshold P-Channel Enhancement-Mode Lateral MOSFET Ordering Information D DS ON (max) -16.5V 1 . 50 . JÎ BV DSS / BV DGS Order Number / Package V GS(th) -1.25A (max) TO-92 SO-8 Die -1.0V LP0701N3 LP0701LG LP0701ND Features Advanced MOS Technology

Contextual Info: LP0701 Çh Supertex inc. Low'Threshold P-Channel Enhancement-Mode Lateral MOSFET Ordering Information BV / BV “ *DGS D max (min) VGS(th> (max) 1.5£2 -1 ,25A -1.0V DS(ON) -16.5V ^D(OH) Order Number / Package TO-92 SO-8 Dice LP0701N3 LP0701 LG LP0701ND

VP1304N2

Abstract: TP2540ND VN1304N3 VP3203N3 LND150N8 VN3205N5 VN1310N3 TN2510N8 TN0102N2 VP1306N2
Contextual Info: _ _ fflpSupertex inc. Device Page # Device Page # Device A lp h a n u m e ric Index Page # Device Page# 2N7002 BSS123 DN2535N2 DN2535N3 DN2535N5 20 24 28 28 28 TN2106K1 TN2106N3 TN2124K1 TN2501N8 TN2501ND 57 57 61 63 63 TP2504ND TP2506ND TP2510N8 TP2510ND

pj 809

Contextual Info: Product Nomenclature and Ordering Information DMOS Proprietary Products RB HI-REL RB = MIL-STD-883 for Arrays SX = Similar to JANTX SXV = Similar to JANTXV FAMILY TYPE D = Vertical DepletionMode DMOS Discretes L = Lateral DMOS Discretes T = Low Threshold DMOS

Backlight Drivers

Abstract: P271 tp0610 TN2105 HV9123 Ring generator HV9112 LCD shutter
Contextual Info: Market Solutions Listing Telecom/Networking Solutions Hotswap/lnrush Current Limiter/Circuit Breaker ICs HV300/HV310 HV301/HV311 HV302/HV312 HV100/HV101 Off-Line Bias Supplies, High Voltage Linear Regulators LR6 LR7 SR036 SR037 LR8 HV9904 AC/DC, DC/DC Converters PWM ICs

LG 42 t

Contextual Info: TP2424 TP2424 Low Threshold Pre-Release Information P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / RDS ON VGS(th) ID(ON) BVDGS (max) (max) (min) TO-243AA* -240V 8.0Ω -2.4V -800mA TP2424N8 * Same as SOT-89.

TO243AA

Abstract: TO-243AA tn0604n TO-236AB oc sot-89 TC2320TG TN2130K1-G LND150N8-G VN0104N3-G TO-236-AB
Contextual Info: Supertex, Inc. DMOS Products MSL and Maximum Temparture Ratings Device 2N7000-G 2N7002-G DN1509N8-G DN2470K4-G DN2530N3-G DN2530N8-G DN2535N3-G DN2535N5-G DN2540N3-G DN2540N5-G DN2540N8-G DN2625K4-G DN2625K6-G DN3135K1-G DN3135N8-G DN3145N8-G DN3525N8-G DN3535N8-G

Voltage Regulator lm10

Abstract: 100 amp npn mosfet high gain low voltage PNP transistor LM10 op amp 2d TRANSISTOR datasheet 22k resistor 1/4 watt datasheet 2k resistor 2 watt datasheet 62M TEX diode r4 high gain low voltage NPN transistor
Contextual Info: LP07 Series Applications LP07 Series Application Note AN-D14 Low Dropout 3.0 Volt Linear Regulator by Jimes Lei, Applications Engineer Introduction A1 is configured as a unity gain buffer for the 0.2V reference. The output of A1 is attenuated by R1 and R2 and is connected to the