KM68V4000B Search Results

Contextual Info: Preliminary CMOS SRAM KM68V4000BZ, KM68U4000BZ Family Document Title 512Kx8 Low Voltage & Low Power SRAM Data Sheets for 48-CSP Revision History Rev. No. History Draft Data Remark Rev. 0.0 - 1′st edition - Package Dimension Finalized Feb. 4′th, 1997 Preliminary

7191B

Contextual Info: CMOS smfñ KM68V4000B, KM68U4000B Family 512Kx8 bit Low Power and Low Voltage CMOS Static RAM FEATURES GENERAL DESCRIPTION • Process Technology : 0.4 im CMOS • Organization: 512Kx8 • Power Supply Voltage KM68V4000B Family: 3.3±0.3V KM68U4000B Family : 3 0±0.3V

SRAM_256KX16

Abstract: KM616U4000B KM616U4000C CMOS Process Family SRAM256KX16 data retention TSOP2-400F
Contextual Info: KM616V4000B/C, KM616U4000B/C CMOS SRAM 256Kx16 bit Low Power and Low Voltage • Process Technology : TFT • Organisation : 256K x16 • Power Supply Voltage KM68V4000B/C Family : 3.0~3.6V KM68U4000B/C Family : 2.7~3.3V • Low Data Retention Voltage : 2V Min

Contextual Info: Preliminary KM68V4000B, KM68U4000B Family CMOS SRAM 512Kx8 bit Low Pow er & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4pm CMOS T he K M 68V 4000B and K M 68U 4000B fam ily are • Organization : 512K x 8 fabricated by SAMSUNG’S advanced CM O S process

Contextual Info: Preliminary CMOS SRAM KM68V4000BZ, KM68U4000BZ Family Document Title 512Kx8 Low Voltage & Low Power SRAM Data Sheets for 48-CSP Revision History Rev. No. History Draft Data Rem ark Rev. 0.0 - 1 s t edition - Package Dimension Finalized Feb.4 th, 1997 Preliminary

Contextual Info: KM68V4000B, KM68U4000B Family CMOS SRAM Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft December 17th 1996 Preliminary 1.0 Finalize - Change datasheet format - Erase low power part from product

KM616V4000BLTI-8L

Contextual Info: KM616V4000B, KM616U4000B Family CMOS SRAM 256Kx16 bit Low Power and Low Voltage CMOS Static RAM FEATURES GENERAL DESCRIPTION • Process Technology : 0.4um CMOS • Organization: 256Kx16 • Power Supply Voltage KM68V4000B Family: 3.3±0.3V KM68U4000B Family : 3.0±0.3V

KM68V4000BLG-7L

Abstract: KM68V4000BLGI10L KM68V4000BL-L
Contextual Info: KM68V4000B, KM68U4000B Family CMOS SRAM Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft December 17, 1996 Preliminary 1.0 Finalize - Change datasheet format - Erase low power part from product

K6T4008V1B-VF70

Abstract: Improved MF10 32-TSOP2-R
Contextual Info: K6T4008V1B, K6T4008U1B Family CMOS SRAM Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft December 17, 1996 Preliminary 1.0 Finalize - Change datasheet format - Erase low power part from product

KM616V4000BL-L

Abstract: KM616U4000B
Contextual Info: Back KM616V4000B, KM616U4000B Family CMOS SRAM Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft June 28, 1996 Advance 0.1 Revise - Die name change ; A to B September 19, 1996

Contextual Info: K M 6 8 V 4 0 0 0 B , K M 6 8 U 4 0 0 0 B Fami l y CM OS SRAM P a c u r o e n ! Title 51 2 K x 8 bit L o w P o w e r and L o w Vo l t a g e C M O S Static R A M R e v is io n H a s ta r'y R e v is io n N o . H is to ry D ra ft D ata R e m a rk 0.0 Initial d ra ft

KM736V789T-60

Abstract: 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L
Contextual Info: MEMORY tCs FUNCTION GUIDE 1. SRAM PRODUCT TREE 1.1.1. Low Power 5.0V Operation SRAM 256Kb» 32KX8 KM62256CI-5/5L KM622S6CL-7/7L KM62256CLE -7/71 KM62256CLI-7/7L KM62256DL-5/5L KM62256DL-7/7L KM62256DLI-7/7L 512Kb» KM68512AL-5/5L 64Kx8 KM88512AL-7/7L KM68S»2ALf-7/7L

KM68U4000A

Contextual Info: KM616V4000B, KM616U4000B Family CMOS SRAM 256Kx16 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4|jm CMOS • Organization : 256Kx16 • Power Supply Voltage KM68V4000A Family : 3.3 ± 0.3V KM68U4000A Family : 3.0 ± 0.3V

Contextual Info: P re lim in a ry K M 6 8 V 4 0 0 0 B Z, K M 6 8 U 4 0 0 0 B Z Fami l y D o c u m C M O S SR A M æ n t TitSe 5 1 2 K x 8 L o w Voltage & Low Powe r SRAM Data Sheets for 48-CSP visio n H astory Rgy-No. History Draft Data Rev. 0.0 -1 's t edition -P a cka g e Dimension Finalized

KM616U4000BLTI-8L

Abstract: KM616U4000B
Contextual Info: KM616V4000B, KM616U4000B Family CMOS SRAM Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft June 28, 1996 Advance 0.1 Revise - Die name change ; A to B September 19, 1996

14270x

Abstract: 8107X m48t35 MK48T08 Zeropower M48Z35Y M48Z58 M48Z58Y AN1012 M48Z02
Contextual Info: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,

BR1632 safety

Abstract: BR1632 BR1225X mk48t08 M48T59Y equivalent 8107X application note AN1012 m48t35 Zeropower AN1012
Contextual Info: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,

br1632 br1225

Contextual Info: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,

K6T4016U3B

Abstract: K6T4016V3B KM616U4000B
Contextual Info: K6T4016V3B, K6T4016U3B Family CMOS SRAM Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM Revision History History Draft Data Remark 0.0 Initial draft June 28, 1996 Advance 0.1 Revise - Die name change ; A to B September 19, 1996 Preliminary

BR1632 safety

Abstract: mk48t08 BR1632 CMOS GATE ARRAYs mitsubishi application note AN1012 m48t35 AN1012 M48Z02 M48Z08 M48Z12
Contextual Info: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs INTRODUCTION Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,