IRHM7230 Search Results

IRHM7230

Abstract: IRHM8230
Contextual Info: PD - 90713C IRHM7230 IRHM8230 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N CHANNEL MEGA HARD RAD 200Volt, 0.40Ω Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total

Contextual Info: PD - 90713E IRHM7230 200V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE T0-254AA ™ RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHM7230 100K Rads (Si) IRHM3230 300K Rads (Si) IRHM4230 600K Rads (Si) IRHM8230 1000K Rads (Si)

h226

Abstract: 9713A
Contextual Info: Data Sheet No. PD-9.713A INTERNATIONAL RECTIFIER I Q R REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRHM7230 IRHM8230 N-CHANNEL MEGA RAD HARD 200 Volt, 0.40», MEGA RAD HARD HEXFET Product Summary International Rectifier’s MEGA RAD HARD Technology HEXFETs

Contextual Info: IRHM7230U Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)9.0 I(DM) Max. (A) Pulsed I(D)6.0 @Temp (øC)100 IDM Max (@25øC Amb)36 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)-55

f0114

Abstract: IRHM3230 IRHM4230 IRHM7230 IRHM8230
Contextual Info: PD - 90713E IRHM7230 200V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE T0-254AA ™ RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHM7230 100K Rads (Si) IRHM3230 300K Rads (Si) IRHM4230 600K Rads (Si) IRHM8230 1000K Rads (Si)

Contextual Info: Data Sheet No. PD-9.713A INTERNATIONAL RECTIFIER I O R REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRHM7230 ° IRHMS230 N-CHANNEL MEGA RAD HARD 200 Volt, 0.40 2, MEGA RAD HARD HEXFET Product Summary International Rectifier’s MEGA RAD HARD Technology HEXFETs

IRF460

Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Contextual Info: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,

IRFM9034

Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
Contextual Info: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number

2N7334

Abstract: irfg9110 H24 SMD
Contextual Info: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130

IRHM7160

Abstract: IRHM7230 IRHM8160 IRHM8230
Contextual Info: PD - 91331B IRHM7160 IRHM8160 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL MEGA RAD HARD Ω , MEGA RAD HARD HEXFET 100Volt, 0.045Ω International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total

10RIA10

Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
Contextual Info: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy

MO-D36AB

Abstract: IRF9510 SEC IRF510 SEC 2n6845 jantx D 10.7 A IRF540 smd irf740 STAND FOR irfm9230 2N7237 JANTXV BC 542
Contextual Info: Government/ Space Products Products From ir Life, Power-Age, Environmental and Military Testing Capabilities — USA MIL-S-19500 Qualified Life Tests and Power-Age Capabilities A. H ig h te m p e ra tu re sto ra g e life te stin g up to 2 0 0 ° C . 0 . H T R B te st c a p a b ilitie s o v e r 2 5,00 0 p o s itio n s for V G S a n d for

IRHM7230

Abstract: IRHM8230 IRHN7230 IRHN8230
Contextual Info: PD - 90822B IRHN7230 IRHN8230 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N CHANNEL MEGA RAD HARD 200Volt, 0.40Ω Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total

160i

Abstract: Elise h226 1x100 aran IRHM7230 IRHM8230 RHM7230 RHM8230 DIODE C249
Contextual Info: Data Sheet No. PD-9.713A INTERNATIONAL RECTIFIER I O R REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRHM7S30 o . IRHMS230 N-CHANNEL MEGA RAO HARD 200 Volt, 0.40i2, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAO HARO technology HEXFETs

IRHM7064

Abstract: IRHM7230 IRHM8064 IRHM8230 91564
Contextual Info: PD - 91564C IRHM7064 IRHM8064 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL MEGA RAD HARD Ω , MEGA RAD HARD HEXFET 60Volt, 0.021Ω International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total

IRHM8230

Abstract: IRHM8360 IRHM7230 IRHM7360
Contextual Info: PD - 90823A IRHM7360 IRHM8360 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N CHANNEL MEGA RAD HARD 400Volt, 0.22Ω Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total

Contextual Info: I n t e r n a t io n a l R e c t if ie r Government and Space Products Part Numb« Wffl bvdss Vota ROS(on) (Ohm) ID* TC«25" 4A"P*) Iq O TolOO* (Amp») Total Dow Riling Rids (St) Pq O Tc»2P (Witts) Fu-ooDwnmd Numbtr _ _ _ _ _ _ _ -_ _ _ _ _ _ _ _ _ _ _

SHOCK+SENSOR+083

Contextual Info: International Government and Space llËSRectifier HEXFET Power MOSFETs Radiation Hardened N & P Channel 3 Part Number * bvDSS (V) R DS(on) (Ohms) >D@ TC = 100°C R thJC Max. P|J@ Tc = 25°C Outline (A) (A) (K/W) (W) Number (1) IRH7054 60 0.025 45 32 0.83