irfb220
Abstract: TO-251AA 251AA 251C IRFR020 IRFR120 IRFR121 IRFR210 IRFR212 T0-251
Text: - 1 f « ± £ *£ Ta=25tC SI € tt € Id Pd r Vds Vgs or * /CH * /CH * Vdg ft 1RFPG50 1RFPG52 IRFRG10 IRFR012 IRFR020 IRFR032 IRFR110 IRFR111 IRFR120 IRFR121 IRFR210 IRFR212 IRFR220 IRFR222 IRFR9010 IRFR9012 1R F R 9 0 2 0 1R F R 9 0 2 2 IRFR9110 IRFR9111
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OCR Scan
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1HFPG50
O-247AC
T0-247AC
O-251AA
IRFR9222
O-243AA
IRFU010
irfb220
TO-251AA
251AA
251C
IRFR020
IRFR120
IRFR121
IRFR210
IRFR212
T0-251
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PDF
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IRFR9012
Abstract: SiHFR9012
Text: IRFR9012, IRFU9012, SiHFR9012, SiHFU9012 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 50 RDS(on) (Ω) VGS = - 10 V 0.70 Qg (Max.) (nC) 9.1 Qgs (nC) 3.0 Qgd (nC) 5.9 Configuration Single IPAK (TO-251) G D D G S G Surface Mountable (Order as IRFR9012, SiHFR9012)
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Original
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IRFR9012,
IRFU9012,
SiHFR9012
SiHFU9012
O-251)
O-252)
IRFR9012
|
PDF
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IRFR9012
Abstract: SiHFR9012
Text: IRFR9012, IRFU9012, SiHFR9012, SiHFU9012 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 50 RDS(on) (Ω) VGS = - 10 V 0.70 Qg (Max.) (nC) 9.1 Qgs (nC) 3.0 Qgd (nC) 5.9 Configuration Single IPAK (TO-251) G D D G S G Surface Mountable (Order as IRFR9012, SiHFR9012)
|
Original
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IRFR9012,
IRFU9012,
SiHFR9012
SiHFU9012
2002/95/EC.
2002/95/EC
IRFR9012
|
PDF
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IRFR9012
Abstract: IRFU9012 SiHFR9012
Text: IRFR9012, IRFU9012, SiHFR9012, SiHFU9012 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 50 RDS(on) (Ω) VGS = - 10 V 0.70 Qg (Max.) (nC) 9.1 Qgs (nC) 3.0 Qgd (nC) 5.9 Configuration Single IPAK (TO-251) G D D G S G Surface Mountable (Order as IRFR9012, SiHFR9012)
|
Original
|
IRFR9012,
IRFU9012,
SiHFR9012
SiHFU9012
O-251)
O-252)
IRFR9012
IRFU9012
|
PDF
|
IRFR9012
Abstract: SiHFR9012
Text: IRFR9012, IRFU9012, SiHFR9012, SiHFU9012 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 50 RDS(on) (Ω) VGS = - 10 V 0.70 Qg (Max.) (nC) 9.1 Qgs (nC) 3.0 Qgd (nC) 5.9 Configuration Single IPAK (TO-251) G D D G S G Surface Mountable (Order as IRFR9012, SiHFR9012)
|
Original
|
IRFR9012,
IRFU9012,
SiHFR9012
SiHFU9012
2011/65/EU
2002/95/EC.
IRFR9012
|
PDF
|
IRFR9012
Abstract: SiHFR9012
Text: IRFR9012, IRFU9012, SiHFR9012, SiHFU9012 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 50 RDS(on) (Ω) VGS = - 10 V 0.70 Qg (Max.) (nC) 9.1 Qgs (nC) 3.0 Qgd (nC) 5.9 Configuration Single IPAK (TO-251) G D D G S G Surface Mountable (Order as IRFR9012, SiHFR9012)
|
Original
|
IRFR9012,
IRFU9012,
SiHFR9012
SiHFU9012
11-Mar-11
IRFR9012
|
PDF
|
IRFR9012
Abstract: SiHFR9012
Text: IRFR9012, IRFU9012, SiHFR9012, SiHFU9012 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 50 RDS(on) (Ω) VGS = - 10 V 0.70 Qg (Max.) (nC) 9.1 Qgs (nC) 3.0 Qgd (nC) 5.9 Configuration Single IPAK (TO-251) G D D G S G Surface Mountable (Order as IRFR9012, SiHFR9012)
|
Original
|
IRFR9012,
IRFU9012,
SiHFR9012
SiHFU9012
2011/65/EU
2002/95/EC.
IRFR9012
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRFR010, SiHFR010 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 50 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 10 Qgs (nC) 2.6 Qgd (nC) 4.8 Configuration Single DESCRIPTION D The power MOSFET technology is the key to Vishay’s
|
Original
|
IRFR010,
SiHFR010
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
IRFR012
Abstract: IRFR411
Text: FUNCTION GUIDE POWER MOSFETs D-PAK N-CHANNEL BVdss V ID(onXA) RDS(onX0) 50.00 6.70 8.20 8.20 14.00 15.00 15.00 0.300 0.300 0.200 0.120 0.120 0.100 IRFR012 IRLR010 IRFR010 IRFR022 IRLR020 IRFR020 60.00 6.70 8.20 8.20 14.00 15.00 15.00 0.300 0.200 0.300 0.120
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OCR Scan
|
IRFR012
IRLR010
IRFR010
IRFR022
IRLR020
IRFR020
IRFR015
IRFR014
IRLR014
IRFR025
IRFR411
|
PDF
|
IRFR9010
Abstract: irfu9010 IRFR9012 IRFU9012 IRFR9010TR HMSC
Text: he d | Nass4sa ooaaBoa i | Data Sheet No. PD-9.516A I N T ERNATIONAL R E C T IFIER INTERNATIONAL RECTIFIER IOR REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRFRSOIO IRFRS01S IRFU9010 IRFU9Q1S P -C H A N N E L Product Summary - 5 0 Volt, 0.50 Ohm HEXFET
|
OCR Scan
|
IRFR9010
IRFU9010
IRFU9012
IRFR9010,
IRFR9012,
IRFU9010,
IRFU9012
IRFR9010TR
IRFR9010
irfu9010
IRFR9012
HMSC
|
PDF
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IRFP9640
Abstract: 1RFR320 IRFP9610 IRFP9640 SAMSUNG IRFR120 IRFP9630 IRFP9622 D-PAK IRFP9621 IRFP9631
Text: - 302 - §y =s tt f m t Vd s or « A £ Vg s Vd g % V (V) fë (Ta=25tO ) Id it Ig s s Pd * /CH * /CH (A) m V g s th) loss (nA) Vg s (V) < m A) Vd s (V) min max (V) (V) % fà 1D (nA) tä (Ta=25cC ) lö(on) Ds(on) Vd s = Vg s Ciss g fs Coss B Crss V g s =0
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OCR Scan
|
1RFP9620
O-220
IRFP9621
IRFP9622
IRFR120
IRFR121
IRFR210
IRFR212
IRFR220
IRFR222
IRFP9640
1RFR320
IRFP9610
IRFP9640 SAMSUNG
IRFP9630
D-PAK
IRFP9631
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRFR010, SiHFR010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 50 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 10 Qgs (nC) 2.6 Qgd (nC) 4.8 Configuration D DPAK (TO-252) G G Low Drive Current Surface Mount Fast Switching Ease of Paralleling
|
Original
|
IRFR010,
SiHFR010
O-252)
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
irf9010
Abstract: D0123 irf90 9015 Free 9014 IRF901 V. 9015 c J77A irfu9010 irfr9010
Text: SAMSUNG ELECTRONICS INC b4E T> • T'ibMlMZ 0Ü153L.D IRFR9 0 1 0/1 2 /14/15 IRFU9 0 1 0/12/14/15 P-CHANNEL POWER MOSFETS FEATURES • • • • • • • ■ SMGK D-PACK Lower Ros ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure
|
OCR Scan
|
IRFR9010/12/14/15
IRFU9010/12/14/15
IRFR9010/U9010
IRFR901
2/U901
4/U9014
IRFR9015/U9015
IRFR9014/9015
irf9010
D0123
irf90
9015
Free 9014
IRF901
V. 9015 c
J77A
irfu9010
irfr9010
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRFR010, SiHFR010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 50 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 10 Qgs (nC) 2.6 Qgd (nC) 4.8 Configuration D DPAK (TO-252) G G S Low Drive Current Surface Mount Fast Switching Ease of Paralleling
|
Original
|
IRFR010,
SiHFR010
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
|
|
IRF9210
Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
Text: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF
|
OCR Scan
|
2N3904
2N3906
2N4401
2N4403
2N5087
2N5088
2N5551
2N6515
KSP06
KSP10
IRF9210
darlington NPN 600V 8a transistor
fet 10a 600v
darlington NPN 600V 12a transistor
transistor IRF9640
N-CH POWER MOSFET TO-92
600v 12A TO220F
NPN Transistor 600V 5A TO-220
transistor irf620
KSH117-1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRFR010, SiHFR010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 50 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 10 Qgs (nC) 2.6 Qgd (nC) 4.8 Configuration D DPAK (TO-252) G G S Low Drive Current Surface Mount Fast Switching Ease of Paralleling
|
Original
|
IRFR010,
SiHFR010
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
IRFP9640
Abstract: IRFP9610 IRFS1Z3 irfb220 IRFS1Z0 IRFP9630 251C IRFR020 IRFR120 IRFR121
Text: - SI € tt f « r Vd s or € ± * Vd g ft V £ Vg s (V) 1 *£ (Ta=25tC ) Ig s s Pd Id * /CH * /CH (A) (W) V g s th) Id s s (nA) Vg s (V) ( M A) Vd s (V) min max (V) (V) n ft '14 Ciss 9 fs Coss Crss ft B ffi % V g s =0 (max) *typ V g s (V) (0) Id (A) *typ
|
OCR Scan
|
1HFPG50
O-247AC
T0-247AC
IRFR120
IRFR121
IRFR210
IRFR212
IRFR220
IRFR222
IRFR310
IRFP9640
IRFP9610
IRFS1Z3
irfb220
IRFS1Z0
IRFP9630
251C
IRFR020
|
PDF
|
IRF740 "direct replacement"
Abstract: irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI IRF9613 rca9213a buz11 cross reference sgsp467 fu120
Text: CROSS REFERENCE GUIDE POWER MOSFETs Inter national Rectifier SAMSUNG Direct Replace ment Inter national Rectifier SAMSUNG Direct Replace ment Inter national Rectifier SAMSUNG Direct Replace ment Inter national Rectifier SAMSUNG Direct Replace
|
OCR Scan
|
IRF510
IRF511
IRF512
IRF513
IRF520
IRF521
IRF522
IRF523
IRF610
IRF611
IRF740 "direct replacement"
irf9640 REPLACEMENT GUIDE
IRF9540 replacement
IRF640 irf510
2Sk350 HITACHI
IRF9613
rca9213a
buz11 cross reference
sgsp467
fu120
|
PDF
|
IRFR9012
Abstract: No abstract text available
Text: IRFR010, SiHFR010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 50 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 10 Qgs (nC) 2.6 Qgd (nC) 4.8 Configuration D DPAK (TO-252) G G S Low Drive Current Surface Mount Fast Switching Ease of Paralleling
|
Original
|
IRFR010,
SiHFR010
2002/95/EC
11-Mar-11
IRFR9012
|
PDF
|
IRFR9012
Abstract: No abstract text available
Text: IRFR010, SiHFR010 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 50 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 10 Qgs (nC) 2.6 Qgd (nC) 4.8 Configuration Single DESCRIPTION D The power MOSFET technology is the key to Vishay’s
|
Original
|
IRFR010,
SiHFR010
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
IRFR9012
|
PDF
|
Q2N4401
Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog
|
Original
|
RD91EB
Q2N4401
D1N3940
Q2N2907A
D1N1190
Q2SC1815
Q2N3055
Q2N1132
D1N750
D02CZ10
D1N751
|
PDF
|
ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
|
OCR Scan
|
CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
|
PDF
|
IFRZ44
Abstract: IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N
Text: PRODUCT INDEX ALPHA NUMERIC INDEX Part numbers In BOLD are preferred standard parts. PART NO. 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRFS30 IRF531 IRF532 IRF533 IRF540 IRF541
|
OCR Scan
|
2N3904
2N3906
2N4400
2N4401
2N4402
2N4403
2N5087
2NS088
2NS551
2N6S15
IFRZ44
IRFZ43
KA3842D
irf510 switch
TRANSISTOR MC7805CT
KA336Z
Transistor mc7812ct
high voltage pnp transistor 700v
IRFZ44 PNP
KS82C670N
|
PDF
|
fu 9014
Abstract: FR9014 fu9014
Text: IRFR9010/12/14/15 IRFU9010/12/14/15 P-CHANNEL POWER MOSFETS FEATURES • • • • • • • D-PACK Lower R d s ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area
|
OCR Scan
|
IRFR9010/12/14/15
IRFU9010/12/14/15
FR901
IRFR901
fu 9014
FR9014
fu9014
|
PDF
|
