IRFR010 Search Results

Contextual Info: IRFR010, SiHFR010 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 50 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 10 Qgs (nC) 2.6 Qgd (nC) 4.8 Configuration Single DESCRIPTION D The power MOSFET technology is the key to Vishay’s

IRFR012

Abstract: IRFR411
Contextual Info: FUNCTION GUIDE POWER MOSFETs D-PAK N-CHANNEL BVdss V ID(onXA) RDS(onX0) 50.00 6.70 8.20 8.20 14.00 15.00 15.00 0.300 0.300 0.200 0.120 0.120 0.100 IRFR012 IRLR010 IRFR010 IRFR022 IRLR020 IRFR020 60.00 6.70 8.20 8.20 14.00 15.00 15.00 0.300 0.200 0.300 0.120

IRFR012

Contextual Info: IRFR010/12/14/15 IRFU010/12/14/15 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • D-PACK L o w e r R ds ON Im p ro v e d in d u c tiv e ru g g e d n e s s F a s t s w itc h in g tim e s R u g g e d p o ly s ilic o n g a te c e ll s tr u c tu r e

Contextual Info: IRFR010 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)50 V(BR)GSS (V)20 I(D) Max. (A)8.2 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)25 Minimum Operating Temp (øC)

Contextual Info: IRFR010, SiHFR010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 50 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 10 Qgs (nC) 2.6 Qgd (nC) 4.8 Configuration D DPAK (TO-252) G G Low Drive Current Surface Mount Fast Switching Ease of Paralleling

Contextual Info: IRFR010, SiHFR010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 50 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 10 Qgs (nC) 2.6 Qgd (nC) 4.8 Configuration D DPAK (TO-252) G G S Low Drive Current Surface Mount Fast Switching Ease of Paralleling

Contextual Info: IRFR010, SiHFR010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 50 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 10 Qgs (nC) 2.6 Qgd (nC) 4.8 Configuration D DPAK (TO-252) G G S Low Drive Current Surface Mount Fast Switching Ease of Paralleling

IRFR9012

Contextual Info: IRFR010, SiHFR010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 50 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 10 Qgs (nC) 2.6 Qgd (nC) 4.8 Configuration D DPAK (TO-252) G G S Low Drive Current Surface Mount Fast Switching Ease of Paralleling

MOSFET 7121

Abstract: AN609 IRFR010 SiHFR010 1712-1
Contextual Info: IRFR010_RC, SiHFR010_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

diode sg 73A

Abstract: irf010 IRF012 sg 82a SG 73a IRF0120 tr/diode sg 73A
Contextual Info: N-CHANNEL POWER MOSFETS IRFR010/12/14/15 FEATURES • • • • • • • Lower Ros ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

IRFR9012

Contextual Info: IRFR010, SiHFR010 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 50 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 10 Qgs (nC) 2.6 Qgd (nC) 4.8 Configuration Single DESCRIPTION D The power MOSFET technology is the key to Vishay’s

S10 diode

Abstract: IRFR9012 IRFR010 IRFU9012 SiHFR010 SiHFR010-E3
Contextual Info: IRFR010, SiHFR010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 50 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 10 Qgs (nC) 2.6 Qgd (nC) 4.8 Configuration D DPAK (TO-252) G G S Low Drive Current Surface Mount Fast Switching Ease of Paralleling

Contextual Info: MOSFETs FUNCTION GUIDE D -PA K N -C H A N N EL Part Number BVdss V lo(on)(A) IRFR010 IRFR020 50 8.20 15.00 0.200 0.100 IRFR014 SSR3055 IRFR024 60 8.20 12.00 15.00 IRFR111 IRFR121 .30 IRFR110 IRFR120 PofWatt) Page 5.00 3.00 25 42 63 73 0.200 0,150 0.100 5.00

IRFr010

Contextual Info: FEATURES D-PACK Lower R d s ON Improved inductive ruggedness Fast switching times Rugged poiysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability 0012315 • • • • • • • 7^4142

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

IRFR012

Abstract: 8SS4 irfr010 IRFU010 IRFU012 k 3525 MOSFET
Contextual Info: 11E 0 INTERNATIONAL R E C T I F I E R K 4flS5HSa aQGÔEbQ 7 | ata Sheet No. PD-9.514A T-35-25 INTERNATIONAL RECTIFIER IO R AVALANCHE AND dv/dt RATED IR FR O iO IRFRCH2 IR FU O IO IRFUQ12 HEXFET TRANSISTORS : \ N-CHANNEL 50 Volt, 0.20 Ohm HEXFET Product Summary

IRU1239SC

Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Contextual Info: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK

MTM13N50E

Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E
Contextual Info: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”

IRFR9020tm

Abstract: IRFR420ATF IRFR224ATM IRFR9220TF IRFR320MTM FQD9N08LTF IRFR9020TF FQD1N80TF KSC5502DTM FQD5P10TM
Contextual Info: Date Created: 3/9/2004 Date Issued: 3/24/2004 PCN # 20041003 DESIGN/PROCESS CHANGE NOTIFICATION - FINAL This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.

IRFP9640

Abstract: 1RFR320 IRFP9610 IRFP9640 SAMSUNG IRFR120 IRFP9630 IRFP9622 D-PAK IRFP9621 IRFP9631
Contextual Info: - 302 - §y =s tt f m t Vd s or « A £ Vg s Vd g % V (V) fë (Ta=25tO ) Id it Ig s s Pd * /CH * /CH (A) m V g s th) loss (nA) Vg s (V) < m A) Vd s (V) min max (V) (V) % fà 1D (nA) tä (Ta=25cC ) lö(on) Ds(on) Vd s = Vg s Ciss g fs Coss B Crss V g s =0

SSR3055

Abstract: IRFR010 IRFR120 IRFR210 IRFR220 IRFR310 IRFR320
Contextual Info: SMD MOSFET Transistors N-Channel Part No. Drain-Source Min. Braekdown On-State Voltage DS Current Typ. Static DS Resistance Part No. Drain-Source Min. Braekdown On-State Voltage DS Current Typ. Static DS Resistance Package Reel BVDSS(V) ID(ON)(A) RDS(ON)(Ω)

12s60

Abstract: k 3525 MOSFET 9514A IRFR010 IRFR012 IRFU010 IRFU012 SS452 5jeu JRFU010
Contextual Info: 11E 0 I N T E R N A T I ON A L R E C T I F I E R 4flS5HSa aQGÔEbQ 7 | h ata Sheet No. PD-9.514A T-35-25 INTERNATIONAL RECTIFIER IOR AVALANCHE AND dv/dt RATED IR FR O iO IR FR 0 1 S HEXFET TRANSISTORS IRFUQ 1 0 N-CHAIMNEL 50 Volt, 0.20 Ohm HEXFET IRFUQ 1 S

IRF1644

Abstract: 12CTQ030-12CT0045 10JQ030-10JQ100 IRL0024 31D003-31D010 IRKT210-16 IRF1401 6cw 78 IRF140-143 IRFT003
Contextual Info: International i « r R e c tifie r PART NO./SERIES 100HF20-100HF160. 100JB05L-100JB12L. 10CTF10-10CTF40. 10CTQ140.150. 10D05-10010.

Irf640 irf9540

Abstract: IRFR220TF IRF510 mosfet irf640 451 MOSFET KSP44 IRFR9120-TF STR 456 2n3904 2n3906 KST2222ATF IRFR120TF
Contextual Info: PRODUCT INDEX ALPHA NUMERIC INDEX Power MOSFET S/STR Standard MOSFET PART NO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907A-TF KST3904-TF KST3906-TF