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Rochester Electronics LLC IRFF211 N-CHANNEL POWER MOSFET
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DigiKey	IRFF211	Bulk			260	1 - 10 - 100 - 1000 $1.15 10000 $1.15	Buy Now
New Jersey Semiconductor Products, Inc. IRFF211
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Bristol Electronics	IRFF211		350		1	1 $19.2 10 $19.2 100 $16.9843 1000 $15.744 10000 $15.744	Buy Now
New Jersey Semiconductor Products Inc IRFF211
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Quest Components	IRFF211		280			1 $20.8 10 $20.8 100 $20.8 1000 $17.6 10000 $17.6	Buy Now
Harris Semiconductor IRFF211 IRFF211 - 2.2A, 150V, 1.5 OHM, N-Channel POWER MOSFET '
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	IRFF211		500		1	1 $1.11 10 $1.11 100 $1.04 1000 $0.9435 10000 $0.9435	Buy Now
International Rectifier IRFF211 IRFF211 - 2.2A, 150V, 1.5 OHM, N-Channel POWER MOSFET '
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	IRFF211		1,043		1	1 $1.11 10 $1.11 100 $1.04 1000 $0.9435 10000 $0.9435	Buy Now

IRFF211 Datasheets (16)

Part	Manufacturer	Description	Datasheet Type	PDF
IRFF211	General Electric	Power Transistor Data Book 1985	Scan	PDF
IRFF211	Harris Semiconductor	Power MOSFET Data Book 1990	Scan	PDF
IRFF211	International Rectifier	TO-39 Package N-Channel HEXFET	Scan	PDF
IRFF211	International Rectifier	N-Channel Power MOSFETs	Scan	PDF
IRFF211	International Rectifier	N-CHannel Power MOSFET in a TO-39 Package, 200 Volt, 1.5 Ohm	Scan	PDF
IRFF211	International Rectifier	TO-39 N-Channel HEXFET Power MOSFETs	Scan	PDF
IRFF211	Motorola	European Master Selection Guide 1986	Scan	PDF
IRFF211	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
IRFF211	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
IRFF211	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
IRFF211	Unknown	FET Data Book	Scan	PDF
IRFF211	Siliconix	N-Channel Enhancement Mode Transistor	Scan	PDF
IRFF211	Vishay Siliconix	Shortform Siliconix Datasheet	Short Form	PDF
IRFF211R	Harris Semiconductor	Power MOSFET Data Book 1990	Scan	PDF

IRFF211R	International Rectifier	Rugged Series Power MOSFETs - N-Channel	Scan	PDF
IRFF211R	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF

IRFF211 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: IRFF210, IRFF211, IRFF212, IRFF213 S E M I C O N D U C T O R 1.8A, and 2.2A, 150V and 200V, 1.5 and 2.4 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 1.8A and 2.2A, 150V to 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power	Original	PDF	IRFF210, IRFF211, IRFF212, IRFF213 TA17442. IRFF213
CMF65-5.556K Abstract: No abstract text available Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 27 March 2011. MIL-PRF-19500/556K 27 December 2010 SUPERSEDING MIL-PRF-19500/556J 16 June 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON,	Original	PDF	MIL-PRF-19500/556K MIL-PRF-19500/556J 2N6782, 2N6782U, 2N6784, 2N6784U, 2N6786, 2N6786U, MIL-PRF-19500. CMF65-5.556K
2N6782U Abstract: 556j 2N6782 2N6784 2N6786 IRFE112 2N6782 equivalent 2N6786U Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 16 September 2009. MIL-PRF-19500/556J 16 June 2009 SUPERSEDING MIL-PRF-19500/556H 12 December 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON,	Original	PDF	MIL-PRF-19500/556J MIL-PRF-19500/556H 2N6782, 2N6782U, 2N6784, 2N6784U, 2N6786, 2N6786U, MIL-PRF-19500. 2N6782U 556j 2N6782 2N6784 2N6786 IRFE112 2N6782 equivalent 2N6786U
DD 127 D TRANSISTOR Abstract: MARKING CODE 556f 2N6782 2N6782U 2N6784 2N6786 Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 26 March 1998. INCH-POUND MIL-PRF-19500/556F 24 December 1997 SUPERSEDING MIL-S-19500/556E 9 December 1994 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON	Original	PDF	MIL-PRF-19500/556F MIL-S-19500/556E 2N6782, 2N6782U, 2N6784, 2N6784U, 2N6786, 2N6786U DD 127 D TRANSISTOR MARKING CODE 556f 2N6782 2N6782U 2N6784 2N6786
IRFF210 Abstract: IRFF211 IRFF212 IRFF213 Text: Standard Power MOSFETs- IRFF210, IRFF211, IRFF212, IRFF213 File N um b er N-Channel Enhancement-Mode Power Field-Effect Transistors 1.8A and 2.2A, 150V - 200V rosioni = 1.50 and 2.40 N-C H A N N EL EN HANCEM ENT MODE Features: •	OCR Scan	PDF	IRFF210, IRFF211, IRFF212, IRFF213 -3374I IRFF212and IRFF213 IRFF210 IRFF211 IRFF212
TA17442 Abstract: TA-1744 Text: IRFF210, IRFF211, IRFF212, IRFF213 HARRIS S E M I C O N D U C T O R A.BA, January 1998 and 2.2A, 150V and 200V, 1.5 and 2.4 Ohm, N-Channel Power MOSFETs Features Description • 1 .8A and 2.2A, 150V to 200V These are N-Channel enhancement mode silicon gate	OCR Scan	PDF	IRFF210, IRFF211, IRFF212, IRFF213 TB334 RFF210, RFF211, RFF212, IRFF213 TA17442 TA-1744
IRFF210 Abstract: IRFF211 IRFF212 Text: löE D SILICONIX INC • ÖSS473S QOmflQl 0 ■ IRFF210/211/212/213 f T ’Silfco n ix JJm in c o rp o ra te d N-Channel Enhancement Mode Transistors "T-IA -07 TO-2Q5AF BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V BR DSS 'W •d (A) IRFF210 200 1.5 2.2 IRFF211	OCR Scan	PDF	E5473S IRFF210/211/212/213 O-205AF IRFF210 IRFF211 IRFF212 1RFF213
diode deg avalanche zo 150 20 Abstract: IRFF210R IRFF211R IRFF212R IRFF213R Text: Rugged Power MOSFETs_ IRFF210R, IRFF211R, IRFF212R, IRFF213R File Num ber 2025 Avalanche Energy Rated N-Channel Power MOSFETs 1.8A and 2.2A, 150V-200V N-CHANNEL ENHANCEMENT MODE rDs on = 1.5Q and 2.40 D Features: • Single pulse avalanche energy rated	OCR Scan	PDF	IRFF210R, IRFF211R, IRFF212R, IRFF213R 50V-200V 92CS-Â IRFF212R IRFF213R diode deg avalanche zo 150 20 IRFF210R IRFF211R
Untitled Abstract: No abstract text available Text: w vys S IRFF210, IRFF211, IRFF212, IRFF213 S e m ico n d ucto r y 7 1.8A, and 2.2A, 150V and 200V, 1.5 and 2.4 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 1.8A and 2.2A, 150V to 200V • High Input Impedance These are N-Channel enhancement mode silicon gate	OCR Scan	PDF	IRFF210, IRFF211, IRFF212, IRFF213
2N6788 motorola Abstract: vmos vmos fet MFE910 n-channel vmos motorola MFE930 2N6659 2N6661 IRFF110 IRFF111 Text: FIELD-EFFECT TRANSISTORS continued Small-Signal TMOS TMOS Power MOSFETs Pow er M O SFETS, M o to ro la tra d e m a rk T M O S , a re FET transistors with an oxide insulated gate which controls vertical c u rren t flow. This basic description fits a n um ber of structures and process titles	OCR Scan	PDF	IRFF431 IRFF432 IRFF433 2N6782 2N6784 2N6786 2N6788 2N6790 2N6792 2N6794 2N6788 motorola vmos vmos fet MFE910 n-channel vmos motorola MFE930 2N6659 2N6661 IRFF110 IRFF111
IRFF210 Abstract: IRFF211 Text: IMEF RELD EFFECT POWER TRANSISTOR IRFF210,211 2.2 AM PERES 200,150 VOLTS RD S O N = 1.5 n Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged	OCR Scan	PDF	IRFF210 33K/W RFF211â IRFF211
F111 Abstract: IRFD9123 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120 Text: - 258 - f t M t± £ € A£ ft Vd s or i Vd g % V Vg s ( V) & ( T a = 2 5 cC ) Id 1! Idss Igss Pd * /C H * /CH (A ) (W) ( n A) Vg s ( V) ( M A) Vg s Vd s (V ) th ) % Vd s = Vg s min max ( V) ( V) Id ( itA) fa ft Fo s(o n ) (Ta=25^0) I d ( on) g fs C iss	OCR Scan	PDF	1RFD9120 IRFD9123 IRF09210 O-205AF IRFF222 1RFF223 T0-205AF 1RFF230 F111 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120
EATON CM20A Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268 Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main	OCR Scan	PDF
FF212R Abstract: 4440 ic circuit diagram Text: J J Ì H A R R I S I I R F F 2 R 1 R F 2 1 2 1 1 / / 2 R 1 / / 1 2 1 2 2 1 R 2 / / 2 2 1 1 3 3 R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 1991 Features • F Package T 0 -2 0 5 A F 1 .8 A a n d 2 .2 A , 1 5 0 V - 2 0 0 V BOTTOM VIEW • rD S o n = 1 -5 f l a n d 2 . 4 f l	OCR Scan	PDF	1RFF210R, FF212R FF213R FF212R 4440 ic circuit diagram

mfe9200 Abstract: F111 IRFD9123 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120 IRF09120 1rfd9120 Text: - 258 - f M t± £ € ft A t Vd s or i Vd g £ Vg s & Ta=25cC 1! Id Pd * /CH * /CH Id s s Ig s s Vg s min Vg s (V) Vd s (V) th) max (V) Id (itA) % (V) IR p -100 ± 2 0 -1.0 1 ±500 ±20 -250 -100 -2.0 -4.0 -0.25 IRFD9123 IR p -60 ± 2 0 -0.8 1 ±500 ±2 0	OCR Scan	PDF	1RFD9120 IRFD9123 IRF09210 -4RFF230 O-205AF IRFF231 T0-205AF IRFF232 IRFF233 mfe9200 F111 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120 IRF09120
IRF 544 N MOSFET Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511 Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no	OCR Scan	PDF
IRF8C30 Abstract: mfe9200 1RFBC40 IRFD110 IRFD123 IRFD9010 IRFD113 IRFAF50 IRFAF52 IRFAG50 Text: 257 - f M « tt fi ± Vd s or € t Vd g h V £ fë (Ta=25t3) Vg s (V) Id 1GSS Pt> * /CH * /CH (A) (W) (nA) V g s th) 1DSS Vg s (V) (MA) Vd s (V) (V) (V) ft m m '14 (Ta=25°C) Ciss Vd s = Vg s Id (mA) Coss Crss ft Vg s -O (max) *typ V g s ( 0 ) (V) Id (A)	OCR Scan	PDF	IRFAF50 O-204AA IRFAF52 1RFAG40 RFF230 O-205AF IRFF231 T0-205AF IRFF232 IRF8C30 mfe9200 1RFBC40 IRFD110 IRFD123 IRFD9010 IRFD113 IRFAG50
IRFD110 Abstract: IRF5134 IRF120 IRF540 1RF542 IRF510 IRF522 IRF611-3 IRFD1Z3 IRF143 Text: _ THOnSON/ D I S TRIBUTOR 5fiE D • 105^573 0005705 35k ■ TCSK P o w er M O S FE T s IR F -S e rie s P o w e r M O S FE T s — N -C h a n n e l Package Maximum Ratings BV q s s V IDS (A) 'DS(O N) OHMS 60 0.40 0.50 0.80 1 1.1 1.3 3 3.50 3.50 4 5	OCR Scan	PDF	O-247 O-204 O-205 O-220 IRFD113 IRFD111 IRFD123 IRFD121 IRFF113 IRFF111 IRFD110 IRF5134 IRF120 IRF540 1RF542 IRF510 IRF522 IRF611-3 IRFD1Z3 IRF143
IRF1401 Abstract: IRF4311 IRF1501 IRF4431 IRF4411 IRF3411 IRF7431 IRF8331 IRF8411 IRF6221 Text: C T ’ SiR conix in c o r p o r a te d Industry Standard Commercial MOSFETs Part Number V BR^DSS Id (A rDS(ON) (A) Package Part Number V(BR^[)SS Id (A) rDS(ON) (A) Package IRF1301 100 14 0.18 TO-2G4 IRF432’ 500 4.0 2.0 T0-204 IRF1311 60 14 0.18 T0-204	OCR Scan	PDF	IRF1301 IRF1311 IRF1321 IRF1331 IRF1401 1RF1411 IRF1421 IRF1431 IRF1501 IRF1511 IRF4311 IRF4431 IRF4411 IRF3411 IRF7431 IRF8331 IRF8411 IRF6221
IRF510 Abstract: irf540 Text: _ THOnSON/ D I S TRIBUTOR 5fiE D • 105^573 0005705 35k ■ TCSK P o w er M O S FE T s IR F -S e rie s P o w e r M O S FE T s — N -C h a n n e l Package Maximum Ratings BV q s s V IDS (A) 'DS(O N) OHMS 60 0.40 0.50 0.80 1 1.1 1.3 3 3.50 3.50 4 5	OCR Scan	PDF	4-PIn80 IRFD113 IRFD111 IRFD123 IRFD121 IRFF113 IRFF111 IRF513 IRF511 IRFF123 IRF510 irf540
lm 3907 Abstract: IRFF211 IRFF213 IRFF210 IRFF212 3907 mosfet G346 AAABS Text: HE D I 4ÔSS455 OOQTBbM 5 \| i f - 7 Data Sheet No. PD-9.353E in te r n a tio n a l RE CT IFIER INTERNATIONAL RECTIFIER IO R HEXFET TRANSISTORS IRFF21 O IRFF21< 1 N-CHANNEL POWER MOSFETs TÜ-39 PACKAGE IRFF212 IRFF213 200 Volt, 1.5 Ohm HEXFET Features: The HEXFET® technology is the key to International	OCR Scan	PDF	ss455 IRFF213 G-346 lm 3907 IRFF211 IRFF213 IRFF210 IRFF212 3907 mosfet G346 AAABS
Untitled Abstract: No abstract text available Text: • M302271 DÖSm4S HARRIS b07 ■ HAS IRFF2 10/ 2 1 1 / 2 1 2 /2 1 3 IRFF2 1 0 R /2 1 1 R /2 1 2 R /2 1 3 R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T 0 -2 0 5 A F BOTTOM VIEW • 1 .8 A and 2.2A, 150V - 200V • rDS on = 1 -5 il and 2 .4 Cl	OCR Scan	PDF	M302271 IRFF210, IRFF211, IRFF212, IRFF213 IRFF210R, IRFF211R, IRFF212R, IRFF213R
thyristor TAG 8506 Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719 Text: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y	OCR Scan	PDF	11PM104 thyristor TAG 8506 nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
F111 Abstract: IRFD9123 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120 1rfd9120 LM3661TL-1.25 Text: - 258 - f ft M t± £ € A£ t Vd s Vg s or Vd g i % V 1RFD9120 IRFD9123 IRFD9210 IRFD9213 iRFD9220 IR IR IR IR IR 1RFD9223 IRFF110 IR IR IR IRFF111 IRFF112 IRFF113 IRFF120 IRFF121 IRFF122 IR IR IR IR IR IRFF123 !R IRFF130 IR IR IR IR IR IR IR IR IR IR	OCR Scan	PDF	1RFD9120 IRFD9123 IRF09210 -4RFF230 O-205AF IRFF231 T0-205AF IRFF232 IRFF233 F111 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120 LM3661TL-1.25

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IRFF211 Search Results

IRFF211 Price and Stock

Rochester Electronics LLC IRFF211

New Jersey Semiconductor Products, Inc. IRFF211

New Jersey Semiconductor Products Inc IRFF211

Harris Semiconductor IRFF211

International Rectifier IRFF211

IRFF211 Datasheets (16)

IRFF211 Datasheets Context Search

Untitled

CMF65-5.556K

2N6782U

DD 127 D TRANSISTOR

IRFF210

TA17442

IRFF210

diode deg avalanche zo 150 20

Untitled

2N6788 motorola

IRFF210

F111

EATON CM20A

FF212R

mfe9200

IRF 544 N MOSFET

IRF8C30

IRFD110

IRF1401

IRF510

lm 3907

Untitled

thyristor TAG 8506

F111