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    HY5V22 Price and Stock

    TDK Corporation CC0805HY5V224ZTR

    TDKCC0805HY5V224ZTR (Alt: CC0805HY5V224ZTR)
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    Avnet Abacus CC0805HY5V224ZTR 143 Weeks 2,000
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    TDK Corporation CC0603HY5V224ZTR

    TDKCC0603HY5V224ZTR (Alt: CC0603HY5V224ZTR)
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    Avnet Abacus CC0603HY5V224ZTR 143 Weeks 4,000
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    TDK Corporation AC13HY5V-224Z

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    Component Electronics, Inc AC13HY5V-224Z 172
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    HY5V22 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HY5V22F Hynix Semiconductor SDRAM - 128Mb Original PDF
    HY5V22FP Hynix Semiconductor 4 Banks x 1M x 32-Bit Synchronous DRAM Original PDF
    HY5V22GF Hynix Semiconductor SDRAM - 128Mb Original PDF
    HY5V22GF-H Hynix Semiconductor 4 Banks x 1M x 32 Bit Synchronous DRAM Original PDF
    HY5V22GF-P Hynix Semiconductor SDRAM - 128Mb Original PDF
    HY5V22(L)F(P)-5 Hynix Semiconductor SDRAM - 128Mb Original PDF
    HY5V22(L)F(P)-55 Hynix Semiconductor SDRAM - 128Mb Original PDF
    HY5V22(L)F(P)-6 Hynix Semiconductor SDRAM - 128Mb Original PDF
    HY5V22(L)F(P)-7 Hynix Semiconductor SDRAM - 128Mb Original PDF
    HY5V22(L)F(P)-8 Hynix Semiconductor SDRAM - 128Mb Original PDF
    HY5V22(L)F(P)-H Hynix Semiconductor SDRAM - 128Mb Original PDF
    HY5V22(L)F(P)-P Hynix Semiconductor SDRAM - 128Mb Original PDF
    HY5V22(L)F(P)-S Hynix Semiconductor SDRAM - 128Mb Original PDF

    HY5V22 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    4 Banks x 1m x 32Bit Synchronous DRAM

    Abstract: No abstract text available
    Text: HY57V283220 L T(P)/ HY5V22(L)F(P) 4 Banks x 1M x 32Bit Synchronous DRAM Revision History Revision No. History 0.1 Defined Preliminary Specification 0.2 1) 2) 3) 4) 5) 6) 0.3 Defined IDD Spec. 0.4 Delited Preliminary. 0.5 Changed IDD Spec. 0.6 133MHz Speed Added


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    HY57V283220 HY5V22 32Bit 133MHz 11x13 400mil 86pin HY5V22F 4 Banks x 1m x 32Bit Synchronous DRAM PDF

    86-TSOP

    Abstract: No abstract text available
    Text: HY57V283220T/ HY5V22F 4 Banks x 1M x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V283220T / HY5V22F is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V283220T / HY5V22F is organized as 4banks of


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    HY57V283220T/ HY5V22F 32Bit HY57V283220T HY5V22F 728-bit 576x32. 86-TSOP PDF

    pin diagram of 2 to 4 decoder

    Abstract: HY57V283220 HY57V283220T HY5V22F
    Text: HY57V283220T/ HY5V22F 4 Banks x 1M x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V283220T / HY5V22F is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V283220T / HY5V22F is organized as 4banks of


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    HY57V283220T/ HY5V22F 32Bit HY57V283220T HY5V22F 728-bit 576x32. pin diagram of 2 to 4 decoder HY57V283220 PDF

    HY5V22GF

    Abstract: No abstract text available
    Text: HY5V22GF 4 Banks x 1M x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY5V22G is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY5V22G is organized as 4banks of 1,048,576x32.


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    HY5V22GF 32Bit HY5V22G 728-bit 576x32. HY5V22GF PDF

    86-TSOP

    Abstract: No abstract text available
    Text: HY57V283220T/ HY5V22F 4 Banks x 1M x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V283220T / HY5V22F is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V283220T / HY5V22F is organized as 4banks of


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    HY57V283220T/ HY5V22F 32Bit HY57V283220T HY5V22F 728-bit 576x32. 86-TSOP PDF

    truth table for 8 to 3 decoder

    Abstract: HY57V283220
    Text: HY57V283220T-I/ HY5V22F-I 4 Banks x 1M x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V283220T-I / HY5V22F-I is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V283220T-I / HY5V22F-I is organized as


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    HY57V283220T-I/ HY5V22F-I 32Bit HY57V283220T-I HY5V22F-I 728-bit 576x32. truth table for 8 to 3 decoder HY57V283220 PDF

    Untitled

    Abstract: No abstract text available
    Text: HY57V283220T-I/ HY5V22F-I 4 Banks x 1M x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V283220T-I / HY5V22F-I is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V283220T-I / HY5V22F-I is organized as


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    HY57V283220T-I/ HY5V22F-I 32Bit HY57V283220T-I HY5V22F-I 728-bit 576x32. PDF

    HY57V283220

    Abstract: HY57V283220T HY5V22FP
    Text: HY57V283220T/ HY5V22FP 4 Banks x 1M x 32Bit Synchronous DRAM Revision History 0.1 : New generation This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not assume any responsibility for use of circuits described. No patent licenses are implied.


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    HY57V283220T/ HY5V22FP 32Bit HY57V283220T HY5V22FP 728-bit HY57V283220 PDF

    Untitled

    Abstract: No abstract text available
    Text: HY57V283220T-I/ HY5V22F-I 4 Banks x 1M x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V283220T-I / HY5V22F-I is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V283220T-I / HY5V22F-I is organized as


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    HY57V283220T-I/ HY5V22F-I 32Bit HY57V283220T-I HY5V22F-I 728-bit 576x32. PDF

    Untitled

    Abstract: No abstract text available
    Text: HY5V22GF 4 Banks x 1M x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY5V22G is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY5V22G is organized as 4banks of 1,048,576x32.


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    HY5V22GF 32Bit HY5V22G 728-bit 576x32. PDF

    HY57V283220

    Abstract: No abstract text available
    Text: HY57V283220 L T(P)/ HY5V22(L)F(P) 4 Banks x 1M x 32Bit Synchronous DRAM Revision History Revision No. History 0.1 Defined Preliminary Specification 0.2 1) 2) 3) 4) 5) 6) 0.3 Defined IDD Spec. 0.4 Delited Preliminary. 0.5 Changed IDD Spec. 0.6 133MHz Speed Added


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    HY57V283220 HY5V22 32Bit 133MHz 11x13 Page15) 400mil 86pin PDF

    HY5V22GF

    Abstract: HY5V22GF-H HY5V22GF-P refresh logic
    Text: HY5V22GF 4 Banks x 1M x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY5V22G is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY5V22G is organized as 4banks of 1,048,576x32.


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    HY5V22GF 32Bit HY5V22G 728-bit 576x32. HY5V22GF HY5V22GF-H HY5V22GF-P refresh logic PDF

    Untitled

    Abstract: No abstract text available
    Text: HY57V283220T/ HY5V22F 4 Banks x 1M x 32Bit Synchronous DRAM Revision History 0.1 : new generation 0.2 : FBGA Ball configuration typo 수정 Functional Block Diagram A10 -> A11 DC Operation Condition 에서 VDDmin 수정 3.0V -> 3.135V Capacitance Value 수정 C11,3,5 -> 4pf / C12 3.8 ->4pf


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    HY57V283220T/ HY5V22F 32Bit 11x13 DESCRIV22F HY57V283220T 400mil PDF

    Untitled

    Abstract: No abstract text available
    Text: HY57V283220T/ HY5V22F 4 Banks x 1M x 32Bit Synchronous DRAM Revision History Revision No. History 0.1 Defined Preliminary Specification 0.2 1 2) 3) 4) 5) 6) 0.3 Defined IDD Spec. 0.4 Delited Preliminary. 0.5 Changed IDD Spec. 0.6 133MHz Speed Added 0.7 Changed FBGA Package Size from 11x13 to 8x13.


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    HY57V283220T/ HY5V22F 32Bit 133MHz 11x13 an283220T 400mil 86pin HY57V283220T PDF

    Untitled

    Abstract: No abstract text available
    Text: HY57V283220T/ HY5V22F 4 Banks x 1M x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V283220T / HY5V22F is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V283220T / HY5V22F is organized as 4banks of


    Original
    HY57V283220T/ HY5V22F 32Bit HY57V283220T HY5V22F 728-bit 576x32. PDF

    Untitled

    Abstract: No abstract text available
    Text: HY57V283220T/ HY5V22F 4 Banks x 1M x 32Bit Synchronous DRAM Revision History 0.1 : new generation 0.2 : FBGA Ball configuration typo 수정 Functional Block Diagram A10 -> A11 DC Operation Condition 에서 VDDmin 수정 3.0V -> 3.135V Capacitance Value 수정 C11,3,5 -> 4pf / C12 3.8 ->4pf


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    HY57V283220T/ HY5V22F 32Bit HY57V283220T 400mil 86pin PDF

    HY5V22EMP-H

    Abstract: 4MX16-Bit HY5V22E
    Text: 128Mb Synchronous DRAM based on 1M x 4Bank x32 I/O Document Title 4Bank x 1M x 32bits 4Bank x1M x16 *2 Stack Synchronous DRAM Revision History Revision No. History Draft Date Remark 0.1 Initial Draft Dec. 2004 Preliminary Dec. 2004 Preliminary Mar. 2005 Preliminary


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    128Mb 32bits 11Preliminary 128Mbit 4Mx16bit HY5V22E HY5V22EMP-H 4MX16-Bit PDF