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    SK Hynix Inc HY57V283220T-7

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    Quest Components HY57V283220T-7 9
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    SK Hynix Inc HY57V283220T-6

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    Quest Components HY57V283220T-6 1
    • 1 $11.235
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    HY57V283220 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HY57V283220 Hynix Semiconductor 4 Banks x 1M x 32-Bit Synchronous DRAM Original PDF
    HY57V283220LT Hynix Semiconductor 4 Banks x 1M x 32-Bit Synchronous DRAM Original PDF
    HY57V283220LT-5 Hynix Semiconductor 4 Banks x 1M x 32-Bit Synchronous DRAM Original PDF
    HY57V283220(L)T(P)-5 Hynix Semiconductor SDRAM - 128Mb Original PDF
    HY57V283220(L)T(P)-55 Hynix Semiconductor SDRAM - 128Mb Original PDF
    HY57V283220(L)T(P)-6 Hynix Semiconductor SDRAM - 128Mb Original PDF
    HY57V283220(L)T(P)-7 Hynix Semiconductor SDRAM - 128Mb Original PDF
    HY57V283220(L)T(P)-8 Hynix Semiconductor SDRAM - 128Mb Original PDF
    HY57V283220(L)T(P)-H Hynix Semiconductor SDRAM - 128Mb Original PDF
    HY57V283220(L)T(P)-P Hynix Semiconductor SDRAM - 128Mb Original PDF
    HY57V283220(L)T(P)-S Hynix Semiconductor SDRAM - 128Mb Original PDF
    HY57V283220T Hynix Semiconductor SDRAM - 128Mb Original PDF
    HY57V283220T-5 Hynix Semiconductor 4 Banks x 1M x 32-Bit Synchronous DRAM Original PDF
    HY57V283220TP-5 Hynix Semiconductor 4 Banks x 1M x 32-Bit Synchronous DRAM Original PDF

    HY57V283220 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4 Banks x 1m x 32Bit Synchronous DRAM

    Abstract: No abstract text available
    Text: HY57V283220 L T(P)/ HY5V22(L)F(P) 4 Banks x 1M x 32Bit Synchronous DRAM Revision History Revision No. History 0.1 Defined Preliminary Specification 0.2 1) 2) 3) 4) 5) 6) 0.3 Defined IDD Spec. 0.4 Delited Preliminary. 0.5 Changed IDD Spec. 0.6 133MHz Speed Added


    Original     		PDF HY57V283220 HY5V22 32Bit 133MHz 11x13 400mil 86pin HY5V22F 4 Banks x 1m x 32Bit Synchronous DRAM

    86-TSOP

    Abstract: No abstract text available
    Text: HY57V283220T/ HY5V22F 4 Banks x 1M x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V283220T / HY5V22F is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V283220T / HY5V22F is organized as 4banks of


    Original     		PDF HY57V283220T/ HY5V22F 32Bit HY57V283220T HY5V22F 728-bit 576x32. 86-TSOP

    pin diagram of 2 to 4 decoder

    Abstract: HY57V283220 HY57V283220T HY5V22F
    Text: HY57V283220T/ HY5V22F 4 Banks x 1M x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V283220T / HY5V22F is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V283220T / HY5V22F is organized as 4banks of


    Original     		PDF HY57V283220T/ HY5V22F 32Bit HY57V283220T HY5V22F 728-bit 576x32. pin diagram of 2 to 4 decoder HY57V283220

    86-TSOP

    Abstract: No abstract text available
    Text: HY57V283220T/ HY5V22F 4 Banks x 1M x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V283220T / HY5V22F is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V283220T / HY5V22F is organized as 4banks of


    Original     		PDF HY57V283220T/ HY5V22F 32Bit HY57V283220T HY5V22F 728-bit 576x32. 86-TSOP

    truth table for 8 to 3 decoder

    Abstract: HY57V283220
    Text: HY57V283220T-I/ HY5V22F-I 4 Banks x 1M x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V283220T-I / HY5V22F-I is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V283220T-I / HY5V22F-I is organized as


    Original     		PDF HY57V283220T-I/ HY5V22F-I 32Bit HY57V283220T-I HY5V22F-I 728-bit 576x32. truth table for 8 to 3 decoder HY57V283220

    Untitled

    Abstract: No abstract text available
    Text: HY57V283220T-I/ HY5V22F-I 4 Banks x 1M x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V283220T-I / HY5V22F-I is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V283220T-I / HY5V22F-I is organized as


    Original     		PDF HY57V283220T-I/ HY5V22F-I 32Bit HY57V283220T-I HY5V22F-I 728-bit 576x32.

    1M x 32 x 4

    Abstract: HY57V283220 HY57V283220T
    Text: HY57V283220T 4 Banks x 1M x 32Bit Synchronous DRAM DESCRIPTION The HY57V283220T is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V283220T is organized as 4banks of 1,048,576x32.


    Original     		PDF HY57V283220T 32Bit HY57V283220T 728-bit 576x32. 400mil 1M x 32 x 4 HY57V283220

    HY57V283220

    Abstract: HY57V283220T HY5V22FP
    Text: HY57V283220T/ HY5V22FP 4 Banks x 1M x 32Bit Synchronous DRAM Revision History 0.1 : New generation This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		PDF HY57V283220T/ HY5V22FP 32Bit HY57V283220T HY5V22FP 728-bit HY57V283220

    Untitled

    Abstract: No abstract text available
    Text: HY57V283220T-I/ HY5V22F-I 4 Banks x 1M x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V283220T-I / HY5V22F-I is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V283220T-I / HY5V22F-I is organized as


    Original     		PDF HY57V283220T-I/ HY5V22F-I 32Bit HY57V283220T-I HY5V22F-I 728-bit 576x32.

    HY57V283220

    Abstract: No abstract text available
    Text: HY57V283220 L T(P)/ HY5V22(L)F(P) 4 Banks x 1M x 32Bit Synchronous DRAM Revision History Revision No. History 0.1 Defined Preliminary Specification 0.2 1) 2) 3) 4) 5) 6) 0.3 Defined IDD Spec. 0.4 Delited Preliminary. 0.5 Changed IDD Spec. 0.6 133MHz Speed Added


    Original     		PDF HY57V283220 HY5V22 32Bit 133MHz 11x13 Page15) 400mil 86pin

    Untitled

    Abstract: No abstract text available
    Text: HY57V283220T/ HY5V22F 4 Banks x 1M x 32Bit Synchronous DRAM Revision History 0.1 : new generation 0.2 : FBGA Ball configuration typo 수정 Functional Block Diagram A10 -> A11 DC Operation Condition 에서 VDDmin 수정 3.0V -> 3.135V Capacitance Value 수정 C11,3,5 -> 4pf / C12 3.8 ->4pf


    Original     		PDF HY57V283220T/ HY5V22F 32Bit 11x13 DESCRIV22F HY57V283220T 400mil

    Untitled

    Abstract: No abstract text available
    Text: HY57V283220T/ HY5V22F 4 Banks x 1M x 32Bit Synchronous DRAM Revision History Revision No. History 0.1 Defined Preliminary Specification 0.2 1 2) 3) 4) 5) 6) 0.3 Defined IDD Spec. 0.4 Delited Preliminary. 0.5 Changed IDD Spec. 0.6 133MHz Speed Added 0.7 Changed FBGA Package Size from 11x13 to 8x13.


    Original     		PDF HY57V283220T/ HY5V22F 32Bit 133MHz 11x13 an283220T 400mil 86pin HY57V283220T

    Untitled

    Abstract: No abstract text available
    Text: Preliminary HY57V283220T/ HY5V22F 4 Banks x 1M x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V283220T / HY5V22F is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V283220T / HY5V22F is organized as 4banks of


    Original     		PDF HY57V283220T/ HY5V22F 32Bit HY57V283220T HY5V22F 728-bit 576x32.

    Untitled

    Abstract: No abstract text available
    Text: HY57V283220T/ HY5V22F 4 Banks x 1M x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V283220T / HY5V22F is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V283220T / HY5V22F is organized as 4banks of


    Original     		PDF HY57V283220T/ HY5V22F 32Bit HY57V283220T HY5V22F 728-bit 576x32.

    k4s643232f

    Abstract: KS RMII Reduced MII aa2c "routing tables"
    Text: PacketTrunk-4 Device TDMoIP/MPLS Gateway Device TXC-05870 DESCRIPTION • Four T1/E1/Serial or one T3/E3 TDM interfaces • One 10/100 Ethernet IEEE 802.3 MAC, interface via MII/RMII/SMII/SSMII; HDX or FDX • VLAN support per IEEE 802.1 p & Q • Four independent advanced clock recovery blocks


    Original     		PDF TXC-05870 TXC-05870-MB, TXC-05870 k4s643232f KS RMII Reduced MII aa2c "routing tables"

    TCXO A31 10MHZ

    Abstract: MT48LC4M32B2TG-6 L1V16 Datum OCXO
    Text: PRELIMINARY PRODUCT BRIEF: SUBJECT TO CHANGE Rev: 091407 DS34S108, DS34S104, DS34S102, DS34S101 Description Abridged General Description Features The IETF PWE3 SAToP/CESoPSN/TDMoIP/HDLC draft-compliant DS34S108 allows up to eight T1/E1 links or frame-based serial HDLC links to be


    Original     		PDF DS34S108, DS34S104, DS34S102, DS34S101 DS34S108 823/G board25 DS34S108 TCXO A31 10MHZ MT48LC4M32B2TG-6 L1V16 Datum OCXO

    Untitled

    Abstract: No abstract text available
    Text: Rev: 032609 DS34S101, DS34S102, DS34S104, DS34S108 Single/Dual/Quad/Octal TDM-over-Packet Chip General Description These IETF PWE3 SAToP/CESoPSN/TDMoIP/HDLC compliant devices allow up to eight E1, T1 or serial streams or one high-speed E3, T3, STS-1 or serial


    Original     		PDF DS34S101, DS34S102, DS34S104, DS34S108 823/G DS34S10x DS34S101 DS34S102

    TXC-06010-MB

    Abstract: TXC-06010 samsung Capacitance lables transwitch packettrunk fifo synchronus asynchronus PacketTrunk
    Text:  PacketTrunk-4 Plus Device TDMoIP/MPLS Gateway Device TXC-06010 DATA SHEET PRODUCT PREVIEW TXC-06010-MB, Ed. 2 June 2006 FEATURES APPLICATIONS • Four T1/E1/Serial or one T3/E3 TDM interfaces • One 10/100 Ethernet IEEE 802.3 MAC interface via MII/RMII/SMII/SSMII; HDX or


    Original     		PDF TXC-06010 TXC-06010-MB, TXC-06010-MB TXC-06010 samsung Capacitance lables transwitch packettrunk fifo synchronus asynchronus PacketTrunk

    Untitled

    Abstract: No abstract text available
    Text: Rev: 032609 DS34S101, DS34S102, DS34S104, DS34S108 Single/Dual/Quad/Octal TDM-over-Packet Chip General Description These IETF PWE3 SAToP/CESoPSN/TDMoIP/HDLC compliant devices allow up to eight E1, T1 or serial streams or one high-speed E3, T3, STS-1 or serial


    Original     		PDF DS34S101, DS34S102, DS34S104, DS34S108 DS34S101 DS34S102

    Untitled

    Abstract: No abstract text available
    Text: PacketTrunk-4 Device TDMoIP/MPLS Gateway Device TXC-05870 DESCRIPTION • Four T1/E1/Serial or one T3/E3/STS-1 TDM interfaces • One 10/100 Ethernet IEEE 802.3 MAC, interface via MII/RMII/SMII/SSMII; HDX or FDX • VLAN support per IEEE 802.1 p & Q • Four independent advanced clock recovery blocks


    Original     		PDF TXC-05870 TXC-05870-MB,

    RFC-5087

    Abstract: TXC-06010AIBG TXC-06010-MB K4S283232E 0X0076 cesopsn TXC-06010
    Text: PacketTrunk-4 Plus Device TDM-over-Packet Gateway Device TXC-06010 DATA SHEET PRELIMINARY TXC-06010- MB, Ed. 6 December 2009 FEATURES APPLICATIONS • Four T1/E1/Serial or one T3/E3 TDM interfaces • One 10/100 Ethernet IEEE 802.3 MAC interface via MII/RMII/SMII/SSMII;HDX or


    Original     		PDF TXC-06010 TXC-06010- TXC-06010-MB, RFC-5087 TXC-06010AIBG TXC-06010-MB K4S283232E 0X0076 cesopsn TXC-06010

    hynix hy57v281620

    Abstract: HY57V561620 HY39S512800 LPC2888 K4S280832 LPC2800 dwa 108 a MARKING CODE 436c MT48LC4M32A2 hp 433C
    Text: UM10208 LPC2880/LPC2888 User manual Rev. 02 — 1 June 2007 User manual Document information Info Content Keywords LPC2880, LPC2888, LPC288x, ARM, ARM7, embedded, 32-bit, microcontroller, USB 2.0, USB HS Abstract LPC288x User manual UM10208 NXP Semiconductors


    Original     		PDF UM10208 LPC2880/LPC2888 LPC2880, LPC2888, LPC288x, 32-bit, LPC288x UM10208 hynix hy57v281620 HY57V561620 HY39S512800 LPC2888 K4S280832 LPC2800 dwa 108 a MARKING CODE 436c MT48LC4M32A2 hp 433C

    um61256

    Abstract: um611024 SRAM 64KX8 5V A29F002 TC51V4265 rom at29c010 WINBOND cross reference MT48LC8M16A2 ks0723 k4s561632 IDT72V245
    Text: Cross Reference Your Memory Provider part number brand AMIC part number Description µPD4218165 µPD4218165 µPD424260 µPD431000A µPD43256B µPD441000L-B µPD442000L-B µPD442012L-XB µPD444012L-B µPD4504161 28F160S3/B3/C3 A29F002 AM29DL162C/D AM29DL163C/D


    Original     		PDF PD4218165 PD424260 PD431000A PD43256B PD441000L-B PD442000L-B PD442012L-XB PD444012L-B PD4504161 um61256 um611024 SRAM 64KX8 5V A29F002 TC51V4265 rom at29c010 WINBOND cross reference MT48LC8M16A2 ks0723 k4s561632 IDT72V245

    um61256

    Abstract: hynix hy57v281620 hy57v641620 cross reference WINBOND Serial flash cross reference UM611024 256k x8 SRAM 28F160S3 Samsung EOL "DDR1 SDRAM" 1MX8/512KX16
    Text: Cross Reference Your Memory Provider Part number µPD4218165 µPD4218165 µPD424260 µPD431000A µPD43256B µPD441000L-B µPD442000L-B µPD442012L-XB µPD444012L-B µPD4504161 28F160S3/B3/C3 A29F002 AM29DL162C/D AM29DL163C/D AM29DL164C/D AM29F002B AM29F010


    Original     		PDF PD4218165 PD424260 PD431000A PD43256B PD441000L-B PD442000L-B PD442012L-XB PD444012L-B PD4504161 um61256 hynix hy57v281620 hy57v641620 cross reference WINBOND Serial flash cross reference UM611024 256k x8 SRAM 28F160S3 Samsung EOL "DDR1 SDRAM" 1MX8/512KX16