Untitled
Abstract: No abstract text available
Text: 86PIN PLASTIC TSOP II (400mil) detail of lead end 86 44 F G R P L S 1 E 43 A H I J S C D M N L S M K B NOTES 1. Each lead centerline is located within 0.13 mm of its true position (T.P.) at maximum material condition. 2. Dimension "A" does not include mold flash, protrusions or gate
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86PIN
400mil)
S86G5-50STIC
S86G5-50-9JH
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Untitled
Abstract: No abstract text available
Text: 1Mx32 bits PC133 SDRAM AIMM based on 1Mx32 SDRAM with LVTTL, 2 banks & 4K Refresh HYM4V33100BTWG Series DESCRIPTION The Hynix HYM4V33100BTWG Series are 1Mx32bits Synchronous DRAM Modules. The modules are composed of one 1Mx32bits CMOS Synchronous DRAMs in 400mil 86pin TSOP-II package, on a 132pin glass-epoxy printed circuit board. Two 0.22uF and one
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1Mx32
PC133
HYM4V33100BTWG
HYM4V33100BTWG
1Mx32bits
1Mx32bits
400mil
86pin
132pin
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SM81600E
Abstract: IS42SM16800E IS42SM81600E IS42SM16800E-7TLI IS42SM32400E IS42SM32400E-7T IS42SM16800E-7BLI
Text: IS42SM81600E / IS42SM16800E / IS42SM32400E IS42RM81600E / IS42RM16800E / IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM APRIL 2011 DESCRIPTION FEATURES • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge
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IS42SM81600E
IS42SM16800E
IS42SM32400E
IS42RM81600E
IS42RM16800E
IS42RM32400E
16Mx8,
8Mx16,
4Mx32
128Mb
SM81600E
IS42SM16800E-7TLI
IS42SM32400E-7T
IS42SM16800E-7BLI
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Untitled
Abstract: No abstract text available
Text: SDRAM AS4SD2M32 512K x 32 x 4 Banks 64-Mb PIN ASSIGNMENT (Top View) Synchronous SDRAM 86-Pin TSOPII FEATURES • Full Military temp (-55°C to 125°C) processing available • Configuration: 512K x 32 x 4 banks • Fully synchronous; all signals registered on positive
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AS4SD2M32
64-Mb)
133MHz
TSOPII-86LD
-40oC
-55oC
125oC
AS4SD2M32
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IS42S32400D
Abstract: 42S32400D is42s32400d-6bli IS42S32400D-7TLI
Text: IS42S32400D 4Meg x 32 128-MBIT SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 125, 100 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge MARCH 2009 OVERVIEW ISSI's 128Mb Synchronous DRAM achieves high-speed
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IS42S32400D
128-MBIT
128Mb
rS32400D-7TI
86-Pin
IS42S32400D-7TLI
IS42S32400D-7BI
IS42S32400D
42S32400D
is42s32400d-6bli
IS42S32400D-7TLI
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dynamic ram binary cell
Abstract: QBA-1 qab1
Text: VIS Preliminary VG36643241AT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 524,288 words x 32 bits x 4 banks. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only
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VG36643241AT
86-pin
1G5-0172
dynamic ram binary cell
QBA-1
qab1
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MT48LC4M32B2P
Abstract: MT48LC4M32B2TG-7 MT48LC4M32B2 128MbSDRAMx32
Text: 128Mb: x32 SDRAM Features Synchronous DRAM MT48LC4M32B2 – 1 Meg x 32 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/sdram Features Figure 1: • PC100 functionality • Fully synchronous; all signals registered on positive
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128Mb:
MT48LC4M32B2
PC100
096-cycle
09005aef80872800/Source:
09005aef80863355
128MbSDRAMx32
MT48LC4M32B2P
MT48LC4M32B2TG-7
MT48LC4M32B2
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MT48LC2M32B2P
Abstract: MT48LC2M32B2 MT48LC2M32B2P-7 MT48LC2M32B2TG 2M32B2 *48LC2M32 H9612
Text: 64Mb: x32 SDRAM Features Synchronous DRAM MT48LC2M32B2 – 512K x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site Features Table 1: • PC100 functionality • Fully synchronous; all signals registered on positive edge of system clock
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MT48LC2M32B2
PC100
096-cycle
09005aef811ce1fe/Source:
09005aef811ce1d5
64MSDRAMx32
MT48LC2M32B2P
MT48LC2M32B2
MT48LC2M32B2P-7
MT48LC2M32B2TG
2M32B2
*48LC2M32
H9612
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09005aef811ce1d5
Abstract: MT48LC2M32B2 MT48LC2M32B2TG-7G
Text: 64Mb: x32 SDRAM SYNCHRONOUS DRAM MT48LC2M32B2 - 512K x 32 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/sdramds FEATURES • PC100 functionality • Fully synchronous; all signals registered on positive edge of system clock
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MT48LC2M32B2
PC100
096-cycle
09005aef811ce1fe/Source:
09005aef811ce1d5
64MSDRAMx32
09005aef811ce1d5
MT48LC2M32B2TG-7G
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MT48LC2M32B2
Abstract: No abstract text available
Text: 64Mb: x32 SDRAM SYNCHRONOUS DRAM MT48LC2M32B2 - 512K x 32 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/sdramds FEATURES • PC100 functionality • Fully synchronous; all signals registered on positive edge of system clock
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MT48LC2M32B2
PC100
096-cycle
025mm
09005aef811ce1d5
64MSDRAMx32
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AT49LD3200
Abstract: No abstract text available
Text: Features • 3.0V to 3.6V Read/Write • Burst Read Performance • • • • • • • • • • – <100 MHz RAS Latency = 2, CAS Latency = 6 , 10 ns Cycle Time tSAC = 7 ns – <75 MHz (RAS Latency = 2, CAS Latency = 5), 13 ns Cycle Time tSAC = 8 ns
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1940B
11/01/xM
AT49LD3200
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Untitled
Abstract: No abstract text available
Text: TVP5160EVM User’s Guide SLEU063 – March 2005 TVP5160EVM User’s Guide Digital Video Department 1 2 3 4 5 6 7 8 9 10 Contents Functional
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TVP5160EVM
SLEU063
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IS42S32400
Abstract: 42S32400
Text: IS42S32400 4M x 32 128Mb SYNCHRONOUS DRAM PRELIMINARY INFORMATION MARCH 2010 FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge OVERVIEW ISSI's 128Mb Synchronous DRAM achieves high-speed
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IS42S32400
128Mb
86-pin
90-ball-Pin
90-Ball
MO-207
IS42S32400
42S32400
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IS42VM81600E
Abstract: IS42VM16800E IS42VM32400E-75TL IS42VM16800E-75BLI
Text: IS42VM81600E / IS42VM16800E / IS42VM32400E IS45VM81600E / IS45VM16800E / IS45VM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM FEATURES JUNE 2011 • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge
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IS42VM81600E
IS42VM16800E
IS42VM32400E
IS45VM81600E
IS45VM16800E
IS45VM32400E
16Mx8,
8Mx16,
4Mx32
128Mb
IS42VM32400E-75TL
IS42VM16800E-75BLI
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IS42R32200C1
Abstract: No abstract text available
Text: ISSI IS42R32200C1 512K Bits x 32 Bits x 4 Banks 64-MBIT SYNCHRONOUS DYNAMIC RAM FEATURES • Clock frequency: 133, 100 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single 2.5V power supply
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IS42R32200C1
64-MBIT)
IS42R32200C1
32-bit
86-Pin
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TSOP 86 Package
Abstract: tsop 86
Text: SMALL OUTLINE L-LEADED PACKAGE 86 PIN PLASTIC FPT-86P-M01 86-pin plastic TSOP II Lead pitch 0.50mm Package width 400mil Lead shape Gullwing Sealing method Plastic mold (FPT-86P-M01) 86-pin plastic TSOP (II) (FPT-86P-M01) 86 44 Details of "A" part 0.25(.010)
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FPT-86P-M01
400mil
86-pin
FPT-86P-M01)
F86001S-1C-1
TSOP 86 Package
tsop 86
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MR27V6466F
Abstract: MR27V6466FTA
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
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PEDR27V6466F-01-08
MR27V6466F
304-Word
16-Bit
152-Word
32-Bit
MR27V6466F
MR27V6466FTA
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MD56V62320
Abstract: No abstract text available
Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.
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PU86
Abstract: No abstract text available
Text: QuickLogic PolarPro Device Data Sheet — 86-Pin TFBGA QL1P100 •••••• Combining Low Power, Performance, Density, and Embedded RAM • Quadrant-based segmentable clock networks Device Highlights 16 quad clock networks per device Low Power Programmable Logic
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86-Pin
QL1P100
PU86
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2MX16X4
Abstract: IS42S32400AL
Text: IS42S81600AL, IS42LS81600AL IS42S16800AL, IS42LS16800AL IS42S32400AL, IS42LS32400AL 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT LOW-POWER SYNCHRONOUS DRAM ISSI PRELIMINARY INFORMATION SEPTEMBER 2003 • Clock frequency: 133, 100, MHz OVERVIEW ISSI's 128Mb Low - Power Synchronous DRAM achieves
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IS42S81600AL,
IS42LS81600AL
IS42S16800AL,
IS42LS16800AL
IS42S32400AL,
IS42LS32400AL
16Meg
128-MBIT
128Mb
2MX16X4
IS42S32400AL
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QUICKLOGIC SDIO Host
Abstract: No abstract text available
Text: PolarPro Solution Platform Family Data Sheet •••••• Family of Solution Platforms Integrating Low Power Programmable Fabric and Embedded SRAM Platform Highlights Flexible Programmable Fabric • 8 to 240 customizable building blocks CBBs (see
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Untitled
Abstract: No abstract text available
Text: HYM41V33100BTWG 1Mx32, 1Mx32 based, PC133 D E S C R I PT I ON The H ynix H Y M 4 V 3 3 10O BT W G CMOS Syn chronous DRAMs Series in 4 0 0 m i l are 1Mx32bits 86pin TSOP-II 0.1uF decoupling capacitors per each SDRAM The Hyundai H Y M 4 V 3 3 1OOBTWG memory. The Hyundai
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HYM41V33100BTWG
1Mx32,
1Mx32
PC133
86pin
1Mx32bits
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MR27V3266D
Abstract: LA5A6
Text: OKI Semiconductor Preliminary MR27V3266D 2M x16 / 1M x32 Synchronous OTP ROM DESCRIPTION The MR27V3266D is a 32Mbit One Time Programmable Synchronous Read Only Memory whose configuration can be electrically switched between 2,097,152 x16bit word mode and 1,048,576 x32bit(double word mode) by
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MR27V3266D
MR27V3266D
32Mbit
x16bit
x32bit
66MHz
50MHz
LA5A6
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET MEMORY 4 x 5 1 2 K x 32 BIT SYNCHRONOUS DYNAMIC RAM MB811643242A-125/-100/-84/-67 CMOS 4-BANK x 524,288-WORD x 32 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB811643242A is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing
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MB811643242A-125/-100/-84/-67
288-WORD
MB811643242A
32-bit
8271REF
01S-1C-1
17Sti
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