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    SK Hynix Inc HY57V658020BTC-10PDR-A

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    HY57V658020 Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HY57V658020 Hynix Semiconductor 8Mx8 bit Synchronous DRAM Series Scan PDF
    HY57V658020B Hynix Semiconductor 4 Banks x 2M x 8-Bit Synchronous DRAM Original PDF
    HY57V658020BLTC-10 Hynix Semiconductor 4 Banks x 2M x 8-Bit Synchronous DRAM Original PDF
    HY57V658020BLTC-10P Hynix Semiconductor 4 Banks x 2M x 8-Bit Synchronous DRAM Original PDF
    HY57V658020BLTC-10S Hynix Semiconductor 4 Banks x 2M x 8-Bit Synchronous DRAM Original PDF
    HY57V658020BLTC-75 Hynix Semiconductor 4 Banks x 2M x 8-Bit Synchronous DRAM Original PDF
    HY57V658020BLTC-8 Hynix Semiconductor 4 Banks x 2M x 8-Bit Synchronous DRAM Original PDF
    HY57V658020BTC Hynix Semiconductor 4 Banks x 2M x 8-Bit Synchronous DRAM Original PDF
    HY57V658020BTC-10 Hynix Semiconductor 4 Banks x 2M x 8-Bit Synchronous DRAM Original PDF
    HY57V658020BTC-10P Hynix Semiconductor 4 Banks x 2M x 8-Bit Synchronous DRAM Original PDF
    HY57V658020BTC-10S Hynix Semiconductor 4 Banks x 2M x 8-Bit Synchronous DRAM Original PDF
    HY57V658020BTC-10SI Hynix Semiconductor 4Mbit x 2 bank x 8 SDRAM, LVTTL, 100MHz Original PDF
    HY57V658020BTC-75 Hynix Semiconductor 4 Banks x 2M x 8-Bit Synchronous DRAM Original PDF
    HY57V658020BTC-75I Hynix Semiconductor 4Mbit x 2 bank x 8 SDRAM, LVTTL, 133MHz Original PDF
    HY57V658020BTC-7I Hynix Semiconductor 4Mbit x 2 bank x 8 SDRAM, LVTTL, 143MHz Original PDF
    HY57V658020BTC-8 Hynix Semiconductor 4 Banks x 2M x 8-Bit Synchronous DRAM Original PDF
    HY57V658020BTC-I Hynix Semiconductor 4 Banks x 2M x 8-Bit Synchronous DRAM Original PDF
    HY57V658020TC-10 Hynix Semiconductor 2Mbit x 4bank x 8 SDRAM, LVTTL, 100ns Scan PDF
    HY57V658020TC-12 Hynix Semiconductor 2Mbit x 4bank x 8 SDRAM, LVTTL, 120ns Scan PDF
    HY57V658020TC-15 Hynix Semiconductor 2Mbit x 4bank x 8 SDRAM, LVTTL, 150ns Scan PDF

    HY57V658020 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HY57V658020B

    Abstract: HY57V658020BTC-10SI HY57V658020BTC-75I HY57V658020BTC-7I
    Text: HY57V658020B 4 Banks x 2M x 8Bit Synchronous DRAM DESCRIPTION The Hynix HY57V658020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range. HY57V658020B is organized as 4banks of 2,097,152x8.


    Original     		PDF HY57V658020B HY57V658020B 864-bit 152x8. initiat00MHz 100MHz 83MHz HY57V658020BTC-75I HY57V658020BTC-10SI HY57V658020BTC-75I HY57V658020BTC-7I

    Untitled

    Abstract: No abstract text available
    Text: HY57V658020B 4 Banks x 2M x 8Bit Synchronous DRAM DESCRIPTION The Hynix HY57V658020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V658020B is organized as 4banks of 2,097,152x8.


    Original     		PDF HY57V658020B HY57V658020B 864-bit 152x8. 400mil 54pin

    3clk

    Abstract: HY57V658020B HY57V658020BTC-10SI HY57V658020BTC-75I HY57V658020BTC-7I
    Text: HY57V658020B 4 Banks x 2M x 8Bit Synchronous DRAM DESCRIPTION The Hynix HY57V658020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range. HY57V658020B is organized as 4banks of 2,097,152x8.


    Original     		PDF HY57V658020B HY57V658020B 864-bit 152x8. 100MHz 83MHz HY57V658020BTC-75I 3clk HY57V658020BTC-10SI HY57V658020BTC-75I HY57V658020BTC-7I

    HY57V658020TC-10

    Abstract: hy57v HY57V658020 HY57V658020TC-12
    Text: HY57V658020 4 Banks x 2M x 8Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V658020 is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V658020 is organized as 4banks of


    Original     		PDF HY57V658020 HY57V658020 864-bit 152x8. 1SE14-10-SEP97. HY57V658020TC-10 hy57v HY57V658020TC-12

    HY57V658020BTC-10S

    Abstract: HY57V658020BTC10P HY57V658020B HY57V658020BLTC-10P HY57V658020BLTC-10S HY57V658020BLTC-75 HY57V658020BLTC-8 HY57V658020BTC-10 HY57V658020BTC-10P HY57V658020BTC-75
    Text: HY57V658020B 4 Banks x 2M x 8Bit Synchronous DRAM DESCRIPTION The Hynix HY57V658020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V658020B is organized as 4banks of 2,097,152x8.


    Original     		PDF HY57V658020B HY57V658020B 864-bit 152x8. 400mil 54pin HY57V658020BTC-10S HY57V658020BTC10P HY57V658020BLTC-10P HY57V658020BLTC-10S HY57V658020BLTC-75 HY57V658020BLTC-8 HY57V658020BTC-10 HY57V658020BTC-10P HY57V658020BTC-75

    Untitled

    Abstract: No abstract text available
    Text: HY57V658020B 4 Banks x 2M x 8Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V658020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V658020B is organized as 4banks of


    Original     		PDF HY57V658020B HY57V658020B 864-bit 152x8. 400mil 54pin

    Untitled

    Abstract: No abstract text available
    Text: HY57V658020B 4 Banks x 2M x 8Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V658020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V658020B is organized as 4banks of 2,097,152x8.


    Original     		PDF HY57V658020B HY57V658020B 864-bit 152x8. 400mil 54pin

    Untitled

    Abstract: No abstract text available
    Text: HY57V658020B 0.1 : Hynix Change 32Mx64bits PC100 SDRAM Unbuffered DIMM based on 16Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh HYM71V32655HCT8M Series DESCRIPTION The Hynix HYM71V32655HCT8M Series are 32Mx64bits Synchronous DRAM Modules. The modules are composed of sixteen


    Original     		PDF HY57V658020B 32Mx64bits PC100 16Mx8 HYM71V32655HCT8M 16Mx8bits 400mil 54pin

    HY57v658020A

    Abstract: HY57V658020A-TC-10S hy57v658020atc-10s HY57V658020ATC-10
    Text: HY57V658020A 4 Banks x 2M x 8Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V658020A is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V658020A is organized as 4banks of


    Original     		PDF HY57V658020A HY57V658020A 864-bit 152x8. 1SE32-11-MAR98. 400mil 54pin HY57V658020A-TC-10S hy57v658020atc-10s HY57V658020ATC-10

    Untitled

    Abstract: No abstract text available
    Text: HY57V658020B 4 Banks x 2M x 8Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V658020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V658020B is organized as 4banks of 2,097,152x8.


    Original     		PDF HY57V658020B HY57V658020B 864-bit 152x8. 400mil 54pin

    HY57V658020A

    Abstract: HY57V658020A-TC-10S hy57v658020atc-10s HY57V658020ATC-10
    Text: HY57V658020A 4 Banks x 2M x 8Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V658020A is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V658020A is organized as 4banks of


    Original     		PDF HY57V658020A HY57V658020A 864-bit 152x8. 400mil 54pin HY57V658020A-TC-10S hy57v658020atc-10s HY57V658020ATC-10

    Untitled

    Abstract: No abstract text available
    Text: 8Mx64 bit SDRAM Unbuffered DIMM F-Series PC/100 SDRAM Specification Supporting based on 8Mx8 SDRAM, LVTTL, 2/4-Banks & 4K/8KRefresh HYM7V65800A/ HYM7V65801A/ HYM7V65830A/ HYM7V65A DESCRIPTION The HYM7V65800A/ 65801A/ 65830A/ 65831A F-Series are high speed 3.3-Volt synchronous dynamic


    Original     		PDF 8Mx64 PC/100 HYM7V65800A/ HYM7V65801A/ HYM7V65830A/ HYM7V65A 5801A/ 5830A/ 5831A

    intel 830

    Abstract: No abstract text available
    Text: 8Mx72 bit SDRAM “Intel” Registered DIMM H-Series with PLL & PC/100 SDRAM Specification Supporting based on 8Mx8 SDRAM, LVTTL, 2/4-Banks & 4K/8KRefresh HYM7V75AS800A/ HYM7V75AS801A/ HYM7V75AS830A/ HYM7V75AS831A DESCRIPTION The HYM7V75AS800A/ 75AS801A/ 75AS830A/ 75AS831A H-Series are high speed 3.3-Volt


    Original     		PDF 8Mx72 PC/100 HYM7V75AS800A/ HYM7V75AS801A/ HYM7V75AS830A/ HYM7V75AS831A 75AS801A/ 75AS830A/ 75AS831A intel 830

    KM48S8030BT-GL

    Abstract: nn5264805tt-b60 KM48S2020CT-GL 0364804CT3B-260 d4564163g5 nt56v1680a0t D4564841g5 81F641642B-103FN M5M4V16S30DTP Siemens 9832
    Text: PC100 SDRAM Component Testing Summary As part of Intel’s enabling process, the following test/characterization procedure has been implemented on PC100 SDRAM components. A small sample of components 2-5 devices have been tested under the conditions described in Table 2.


    Original     		PDF PC100 KM48S8030BT-GL nn5264805tt-b60 KM48S2020CT-GL 0364804CT3B-260 d4564163g5 nt56v1680a0t D4564841g5 81F641642B-103FN M5M4V16S30DTP Siemens 9832

    Untitled

    Abstract: No abstract text available
    Text: u v H u n i a 8Mx8 bit Synchronous DRAM Series m /3 Y U N U A I HY57V648010/ HY57V648020/ HY57V658010/ HY57V658020 HY57V648011/ HY57V648021/ HY57V6S8011/ HY57V658021 PRELIMINARY DESCRIPTION HY57V648010 description and pinout, offering fully synchronous operation. All address, data and control inputs are


    OCR Scan     		PDF HY57V648010/ HY57V648020/ HY57V658010/ HY57V658020 HY57V648011/ HY57V648021/ HY57V658011/ HY57V658021 HY57V648010 HY57V648020

    HY57V658020ATC-10

    Abstract: HY57V658020A
    Text: -M Y U N D H I - - • HY57V658020A 4 Banks x 2 M x 8BI1 Synchronous DRAM DESCRIPTION The Hyundai HY57V658020A is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited lor the main memory applications which require large memory density and high bandwidth. HY57V658020A Is organized as 4banks of


    OCR Scan     		PDF HY57V658020A HY57V658020A 864-bit 152x8. 400mil 54pin SE32-H-MAR98 HY57V658020ATC-10

    Untitled

    Abstract: No abstract text available
    Text: HY57V658020BTC 8Mx8-bit, 4K Ref., 4Banks, 3.3V DESCRIPTION The Hynix HY57V658020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V658020B is organized as 4banks of 2,097,152x8.


    OCR Scan     		PDF HY57V658020BTC HY57V658020B 864-bit 152x8.

    HY57V648010

    Abstract: HY57V648011 HY57V648020 HY57V648021 HY57V658010 HY57V658011 HY57V658020
    Text: u v i i u i i i • 8Mx8 bit Synchronous DRAM Series I J N D f l I HY57V648010/ HY57V648020/ HY57V658010/ HY57V658020 _HY57V648011/ HY57V648021/ HY57V658011/ HY57V658021 PRELIMINARY DESCRIPTION HY57V648010 4Mbit x 2bank x 8 I/O, LVTTL


    OCR Scan     		PDF HY57V648010/ HY57V648020/ HY57V658010/ HY57V658020 HY57V648011/ HY57V648021/ HY57V658011/ HY57V6S8021 4b750flfl 00052b2 HY57V648010 HY57V648011 HY57V648020 HY57V648021 HY57V658010 HY57V658011 HY57V658020

    Untitled

    Abstract: No abstract text available
    Text: - # HY57V658020 -H Y U N D A I 4 Banks x 2M x SBit Synchronous DRAM DESCRIPTION The Hyundai HY57V658020 is a 6 7 ,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory appli­ cations which require large memory density and high bandwidth. HY57V658020 is organized as 4banks of


    OCR Scan     		PDF HY57V658020 HY57V658020 864-bit 152x8.

    4mx16

    Abstract: HYM7V65401 8Mx72 PC100 16Mx64 1MX16BIT MX321 7V651601 Y57V641620HG y57v641620
    Text: TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUICK REFERENCE SDRAM Part Num bering 9 SDRAM M odule Part Num bering 11 3. DATA SHEETS SDRAM 16M -bit SDRAM HY57V 161610DTC HY57V161610DTC-I 1Mx16-bit, 4K Ref., 2Banks, 3.3V 1 M x16-bit, 4K Ref., 2Banks, 3.3V, ET_Part


    OCR Scan     		PDF HY57V 161610DTC HY57V161610DTC-I 1Mx16-bit, x16-bit, HYM41V33100BTWG HYM41V33100DTYG PC133 1Mx32, 1Mx16 4mx16 HYM7V65401 8Mx72 PC100 16Mx64 1MX16BIT MX321 7V651601 Y57V641620HG y57v641620

    1gb pc133 SDRAM DIMM 144pin

    Abstract: 54-PIN PC100 gm72v66841
    Text: 2 . PRODUCT QUICK REFERENCE PRODUCT QUICK REFERENCE HY XX X XX XX X X X X X X - xx x .L HYNIX MEMORY : SDRAMs PROCESS & POWER SUPPLY : CMOS, 3.3V DENSITY & REFRESH 64M 4K Refresh 64M 8K Refresh 128M 4K Refresh 256M 8K Refresh 64 65 28 56 12 512M 8K Refresh


    OCR Scan     		PDF 200MHz 183MHz 166MHz 143MHz PC133 125MHz PC100, 100MHz 1gb pc133 SDRAM DIMM 144pin 54-PIN PC100 gm72v66841

    hy57v168010a

    Abstract: Y57V164010A hy57v161610a Y57V HY57V641620 HY57V641621
    Text: «HYUNDAI 1. TABLE OF CONTENTS TABLE OF CONTENTS In d e x . 2. PRODUCT QUICK REFERENCE GUIDE SD R A M Part N u m b ering.


    OCR Scan     		PDF 16M-bit 1Mx16-bit Y57V164010A HY57V168010A HY57V161610A 7V651610 HY57V651620 HY57V644021 HY57V654021 HY57V648021 Y57V HY57V641620 HY57V641621

    hy57v168010b

    Abstract: ddr sdram 128Mbit 8Mx16 54-PIN
    Text: SDRAM ORDERING INFORMATION 4Mbit SDRAM Cttöanfeattws 256Kx16 Bank 2 1K Bank 2 2 2 Ref. 4K 4K 4K PWtNO» HY57V16401ÛBTC HY57V168010BTC HY57V161610BTC Bänk 2 2 2 Ref. PW Ho. 4K HY57V16401ÛCTC 4K HY57V168010CTC 4K HY57V161610CTC ii/ k - Pm N o. M ax.im x


    OCR Scan     		PDF 256Kx16 HY57V41610TC 400mil 16Mbit 1Mx16 HY57V16401 HY57V168010BTC HY57V161610BTC 44pin) hy57v168010b ddr sdram 128Mbit 8Mx16 54-PIN

    Untitled

    Abstract: No abstract text available
    Text: "H Y U N D A I V * 16MX72 BIT SDRAM UNBUFFERED DIMM F-SERIES ✓ PC/100 SDRAM Specification Supporting based on 8Mx8 SDRAM, LVTTL, 2/4-Banks & 4K /8K Refresh HYM7V75A1600A/ HYM7V75A1601 A/ HYM7V75A1830A/ HYM7V75A1631A DESCRIPTION The HYM7V75A1600A/ 75A1601 A/ 75A1630A/ 75A1631A F-Series are high speed 3.3-Volt synchronous


    OCR Scan     		PDF 16MX72 PC/100 HYM7V75A1600A/ HYM7V75A1601 HYM7V75A1830A/ HYM7V75A1631A 75A1601 75A1630A/ 75A1631A