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    GRM31MR71H105KA88L Price and Stock

    Murata Manufacturing Co Ltd GRM31MR71H105KA88L

    CAP CER 1UF 50V X7R 1206
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    DigiKey GRM31MR71H105KA88L Cut Tape
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    GRM31MR71H105KA88L Digi-Reel 1
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    GRM31MR71H105KA88L Reel
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    Verical GRM31MR71H105KA88L 3,501,000 3,000
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    GRM31MR71H105KA88L 13,500 900
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    Bristol Electronics GRM31MR71H105KA88L 16,919
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    GRM31MR71H105KA88L 6,495 23
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    Quest Components GRM31MR71H105KA88L 55,558
    • 1 $0.074
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    GRM31MR71H105KA88L 5,196
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    GRM31MR71H105KA88L 1,600
    • 1 $0.185
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    TME GRM31MR71H105KA88L 7,300 100
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    ComSIT USA GRM31MR71H105KA88L 2,677
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    Avnet Abacus GRM31MR71H105KA88L Reel 11 Weeks 3,000
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    Chip-Germany GmbH GRM31MR71H105KA88L 1,281,000
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    Component Electronics, Inc GRM31MR71H105KA88L 8,300
    • 1 $0.42
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    Win Source Electronics GRM31MR71H105KA88L 621,000
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    muRata GRM31MR71H105KA88L

    MLCC 1206 (3,2 x 1,6 x 1,15 mm) 1uF 50V X7R (EIA) ±10% (K)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    GUDECO Handelsgesellschaft GmbH GRM31MR71H105KA88L 6,000 3,000
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    GRM31MR71H105KA88L Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    GRM31MR71H105KA88L muRata Ceramic Capacitors, Capacitors, CAP CER 1UF 50V 10% X7R 1206 Original PDF
    GRM31MR71H105KA88L muRata Chip Monolithic Ceramic Capacitor Original PDF

    GRM31MR71H105KA88L Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    GR331

    Abstract: en220 arcotronics mkp 1.44 b3202 y2 panasonic GC 5.5v 1.0f EPOC E68 X2 CAP 220nF ±20 275V murata ARCOTRONICS MKP 1.44 7.5 arcotronics mkp 1.44 ac capacitors mkp21
    Text: An invaluable resource for buyers and engineers This particular book presents Anglia’s primary capacitor product lines sourced from eleven key suppliers. Compiled in a convenient format to assist both buyers and engineers, it provides all the essential data and part numbers to aid the


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    N1200 TZ03Z2R3E169B00 TZ03Z050E169B00 TZ03Z070E169B00 TZ03Z100E169B00 TZ03T110E169B00 TZ03R200E169B00 TZ03R300E169B00 TZ03P450E169B00 GR331 en220 arcotronics mkp 1.44 b3202 y2 panasonic GC 5.5v 1.0f EPOC E68 X2 CAP 220nF ±20 275V murata ARCOTRONICS MKP 1.44 7.5 arcotronics mkp 1.44 ac capacitors mkp21 PDF

    jrc 78L08

    Abstract: RESISTOR POTENTIOMETER GRM32ER71H106KA12L stripline power combiner splitter GRM31MR71H105KA88L grm32er71h106ka transistor J333 AN10923 GRM32ER71H106KA12 jrc78L08
    Text: AN10923 1.5 GHz Doherty power amplifier for base station applications using the BLF6G15L-250PBRN Rev. 1 — 14 March 2011 Application note Document information Info Content Keywords RF power transistor, Doherty architecture, LDMOS, Power amplifier, W-CDMA, LTE, Base station, BLF6G15L-250PBRN


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    AN10923 BLF6G15L-250PBRN BLF6G15L-250PBRN jrc 78L08 RESISTOR POTENTIOMETER GRM32ER71H106KA12L stripline power combiner splitter GRM31MR71H105KA88L grm32er71h106ka transistor J333 AN10923 GRM32ER71H106KA12 jrc78L08 PDF

    Ceramic Capacitors 104

    Abstract: mev-50a DXW21BN7511S SAYFP1G95AA0B00 ck 66 ul94v-0 lcd SAYFP897MCA0B00 SAFEB1G57KE0F00 SAWEN1G84 murata enc-03r MA300D1-1
    Text: MURATA PRODUCTS 2009-2010 2009-2010 MURATA PRODUCTS !Note • This PDF catalog is downloaded from the website of Murata Manufacturing co., ltd. Therefore, it’s specifications are subject to change or our products in it may be discontinued without advance notice.


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    K99E-27 Ceramic Capacitors 104 mev-50a DXW21BN7511S SAYFP1G95AA0B00 ck 66 ul94v-0 lcd SAYFP897MCA0B00 SAFEB1G57KE0F00 SAWEN1G84 murata enc-03r MA300D1-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MW7IC915N Rev. 1, 12/2009 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifier The MW7IC915N wideband integrated circuit is designed with on- chip matching that makes it usable from 698 to 960 MHz. This multi- stage struc-


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    MW7IC915N MW7IC915N MW7IC915NT1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136


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    AFT09MS015N AFT09MS015NT1 PDF

    GRM31MR72A223K

    Abstract: grm21ar72a224
    Text: !Note • This PDF catalog is downloaded from the website of Murata Manufacturing co., ltd. Therefore, it’s specifications are subject to change or our products in it may be discontinued without advance notice. Please check with our sales representatives or product engineers before ordering.


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    C02E-16 GRM31MR72A223K grm21ar72a224 PDF

    panasonic inverter dv 707 manual

    Abstract: 018T A423 Mosfet FTR 03-E Arcotronics 1.27.6 nsl 7053 mkp DX 3500 manual Honeywell DBM 01A Polyester capacitors 823k 250V SPRAGUE powerlytic 36Dx sprague 68D
    Text: PASSIVE COMPONENTS Resistors Networks and Arrays Bourns. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 590, 591, 592 Caddock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 593 CTS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 594


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    PDF

    MD8IC970NR1

    Abstract: GRM31MR71H105KA88L MD8IC SG73P2AT ipc sm 840 GRM188R71C104K01D ATC600F4R7BT250XT TO270 ATC600S5R6JT250XT
    Text: Freescale Semiconductor Technical Data Document Number: MD8IC970N Rev. 2, 5/2011 RF LDMOS Wideband Integrated Power Amplifiers The MD8IC970N wideband integrated circuit is designed with on-chip prematching that makes it usable from 136 to 940 MHz. This multi-stage


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    MD8IC970N MD8IC970NR1 MD8IC970GNR1 GRM31MR71H105KA88L MD8IC SG73P2AT ipc sm 840 GRM188R71C104K01D ATC600F4R7BT250XT TO270 ATC600S5R6JT250XT PDF

    transistor B 764

    Abstract: ATC600F150JT250XT 0051A
    Text: Freescale Semiconductor Technical Data Document Number: AFT09MP055N Rev. 0, 7/2013 RF Power LDMOS Transistors AFT09MP055NR1 AFT09MP055GNR1 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from


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    AFT09MP055N AFT09MP055NR1 AFT09MP055GNR1 AFT09MP055NR1 transistor B 764 ATC600F150JT250XT 0051A PDF

    GRM32ER71E226ME15L

    Abstract: GA355QR7GB103KW01L GMD033R60J104KE11D GRM1555C1H470GA01D GRM1555C1H101JA01D GRM033R61A104KE84D GRM1555C1H3R0CA01D GRM1555C1H1R0CA01D GRM1555C1H3R0BA01D GRM1555C1H1R3WA01D
    Text: !Note • This PDF catalog is downloaded from the website of Murata Manufacturing co., ltd. Therefore, it’s specifications are subject to change or our products in it may be discontinued without advance notice. Please check with our sales representatives or product engineers before ordering.


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    C02E-15 GRM32ER71E226ME15L GA355QR7GB103KW01L GMD033R60J104KE11D GRM1555C1H470GA01D GRM1555C1H101JA01D GRM033R61A104KE84D GRM1555C1H3R0CA01D GRM1555C1H1R0CA01D GRM1555C1H3R0BA01D GRM1555C1H1R3WA01D PDF

    D260-4118-0000

    Abstract: MRFE6VS25L MRFE6VS25GNR1 transistor J128 2422D 21-201-J ATC100B2R7BT500XT crcw12065k60f avx c0805c103k5rac MRFE6VS25NR1
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 1, 12/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to


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    MRFE6VS25N MRFE6VS25NR1 MRFE6VS25GNR1 MRFE6VS25N D260-4118-0000 MRFE6VS25L MRFE6VS25GNR1 transistor J128 2422D 21-201-J ATC100B2R7BT500XT crcw12065k60f avx c0805c103k5rac PDF

    gsc3

    Abstract: GRM188R71C104K01D ATC600F4R7BT250XT
    Text: Freescale Semiconductor Technical Data Document Number: MD8IC970N Rev. 0, 2/2011 RF LDMOS Wideband Integrated Power Amplifier The MD8IC970N wideband integrated circuit is designed with on-chip prematching that makes it usable from 136 to 940 MHz. This multi-stage


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    MD8IC970N MD8IC970NR1 MD8IC970N gsc3 GRM188R71C104K01D ATC600F4R7BT250XT PDF

    GRM43DR61E106KA12L

    Abstract: capacitor 47uf 1210 x7r capacitor 22uf 1210 x7r GRM188R71H224K GRM X7R 47UF uCapacitor X7R 1206u GRM21BR71H224KA01L GRM32ER61E226K X7R murata GRM21BR71H334KA88D
    Text: CHIP MONOLITHIC CERAMIC CAPACITOR GRM series / X7R or X5R Temp Chara. Features 1. Terminations are made of metal highly resistant to migration. 2. Temperature characteristic : X7R -55 - 125C, +/-15% or X5R (-55 - 85C, +/-15%) with 50V or 25V, 16V, 10V, 6.3V.


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    GRM18 1000pF 4700pF 6800pF 015uF 022uF 033uF FM7500U-094-December03 GRM43DR61E106KA12L capacitor 47uf 1210 x7r capacitor 22uf 1210 x7r GRM188R71H224K GRM X7R 47UF uCapacitor X7R 1206u GRM21BR71H224KA01L GRM32ER61E226K X7R murata GRM21BR71H334KA88D PDF

    GRM32ER71H106KA88L

    Abstract: No abstract text available
    Text: BLP7G22-10 LDMOS driver transistor Rev. 2 — 30 May 2013 Product data sheet 1. Product profile 1.1 General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Table 1. Application performance multiple frequencies


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    BLP7G22-10 GRM32ER71H106KA88L PDF

    J221

    Abstract: CW12010T0050G
    Text: Freescale Semiconductor Technical Data Document Number: A2I25D012N Rev. 0, 9/2014 RF LDMOS Wideband Integrated Power Amplifiers The A2I25D012N wideband integrated power amplifier is optimized to function with a single multi-band circuit usable from 2300 to 2690 MHz. This


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    A2I25D012N A2I25D012N A2I25D012NR1 A2I25D012GNR1 J221 CW12010T0050G PDF

    A9M15

    Abstract: AFT09MS015N TRANSISTOR Z10 D55295 815 transistor
    Text: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 1, 7/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136


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    AFT09MS015N AFT09MS015NT1 A9M15 AFT09MS015N TRANSISTOR Z10 D55295 815 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MMRF1021N Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this


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    MMRF1021N MMRF1021NT1 PDF

    GRM21BB31

    Abstract: 01K0790-20 GRM1882C1H270JA01 Waka 01K0790-20 MCR03J472 D20-74N7 NE5550234 4.7n2
    Text: A Business Partner of Renesas Electronics Corporation. NE5550234 Data Sheet R09DS0039EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power MOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm


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    NE5550234 R09DS0039EJ0200 NE5550234 NE5550234-T1 NE5550234-AZ NE5550234-T1-AZ WS260 HS350 GRM21BB31 01K0790-20 GRM1882C1H270JA01 Waka 01K0790-20 MCR03J472 D20-74N7 4.7n2 PDF

    A5M06

    Abstract: Transistor Z17
    Text: Freescale Semiconductor Technical Data Document Number: AFT05MS006N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT05MS006NT1 Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this


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    AFT05MS006N AFT05MS006NT1 A5M06 Transistor Z17 PDF

    2A153K

    Abstract: GRM188R71H473KA61D GRM155R71H223KA12D GRM21BR72A474 GRM0335C1H1R0WD01D GRM31M5C1H563JA01L GRM1555C1H6R8DA01D GRM0335C1H470JD01D grm1555c1h1r8ca01d GRM1555C1H2R2CA01D
    Text: PDF catalog is downloaded from!CAUTION the website for of Murata Manufacturing co., ltd. Therefore, it’s specifications areinsubject to change or oursmoking productsand/or in it may be discontinued without advance notice. Please check with our • Please


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    GRM188R60J106ME47 GRM31CR60J107ME39 120Hz 2A153K GRM188R71H473KA61D GRM155R71H223KA12D GRM21BR72A474 GRM0335C1H1R0WD01D GRM31M5C1H563JA01L GRM1555C1H6R8DA01D GRM0335C1H470JD01D grm1555c1h1r8ca01d GRM1555C1H2R2CA01D PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MD8IC970N Rev. 2, 5/2011 RF LDMOS Wideband Integrated Power Amplifiers The MD8IC970N wideband integrated circuit is designed with on-chip prematching that makes it usable from 136 to 940 MHz. This multi-stage


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    MD8IC970N MD8IC970N MD8IC970NR1 MD8IC970GNR1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC915N Rev. 0, 9/2009 RF LDMOS Wideband Integrated Power Amplifier The MW7IC915N wideband integrated circuit is designed with on - chip matching that makes it usable from 698 to 960 MHz. This multi - stage


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    MW7IC915N 51miconductor MW7IC915NT1 PDF

    grm31c5c1h104ja01l

    Abstract: GRM1555C1H1R0CA01D 2A 250V 108 thermo fuse GRM1555C1H101JA01D grm1557u1h270jz01d electronic passive components catalog GRM2195C1H153JA01D GMD155R71E103KA01D gjm0335c1e2r7bb01 GRM32ER71C226MEA8
    Text: !Note • This PDF catalog is downloaded from the website of Murata Manufacturing co., ltd. Therefore, it’s specifications are subject to change or our products in it may be discontinued without advance notice. Please check with our sales representatives or product engineers before ordering.


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    C02E-16 grm31c5c1h104ja01l GRM1555C1H1R0CA01D 2A 250V 108 thermo fuse GRM1555C1H101JA01D grm1557u1h270jz01d electronic passive components catalog GRM2195C1H153JA01D GMD155R71E103KA01D gjm0335c1e2r7bb01 GRM32ER71C226MEA8 PDF

    GMD03

    Abstract: GQM2195C2E6R8 ERB32 MURATA GQM1875C2E220JB12 GRM42A7U3F330 ERB21B5C2E8R2CDX1L GRM31CR72A105KA01 MLCC Y5V murata grm21b ERB32Q5C2H180JDX1L GRM033R71E102K
    Text: !Note • This PDF catalog is downloaded from the website of Murata Manufacturing co., ltd. Therefore, it’s specifications are subject to change or our products in it may be discontinued without advance notice. Please check with our sales representatives or product engineers before ordering.


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    C02E-15 GMD03 GQM2195C2E6R8 ERB32 MURATA GQM1875C2E220JB12 GRM42A7U3F330 ERB21B5C2E8R2CDX1L GRM31CR72A105KA01 MLCC Y5V murata grm21b ERB32Q5C2H180JDX1L GRM033R71E102K PDF