FS75R07N2E4 Search Results
FS75R07N2E4 Price and Stock
Infineon Technologies AG FS75R07N2E4BOSA1IGBT MODULE 650V 75A 250W |
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FS75R07N2E4BOSA1 | Tray |
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FS75R07N2E4BOSA1 | Tray | 111 Weeks | 10 |
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FS75R07N2E4BOSA1 | 3 | 1 |
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FS75R07N2E4BOSA1 | 19 Weeks | 1 |
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Infineon Technologies AG FS75R07N2E4BPSA1LOW POWER ECONO AG-ECONO2B-411 |
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FS75R07N2E4BPSA1 | Tray | 15 |
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FS75R07N2E4BPSA1 | Tray | 12 Weeks | 15 |
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FS75R07N2E4BPSA1 |
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Infineon Technologies AG FS75R07N2E4B11BOSA1IGBT MODULE 650V 75A 250W |
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FS75R07N2E4B11BOSA1 | Tray |
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FS75R07N2E4B11BOSA1 | Tray | 111 Weeks | 30 |
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FS75R07N2E4B11BOSA1 | 3 | 1 |
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FS75R07N2E4B11BOSA1 | 53 Weeks | 10 |
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Infineon Technologies AG FS75R07N2E4B11BPSA1LOW POWER ECONO AG-ECONO2B-411 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FS75R07N2E4B11BPSA1 | Tray | 45 |
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FS75R07N2E4B11BPSA1 | Tray | 12 Weeks | 45 |
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FS75R07N2E4B11BPSA1 |
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FS75R07N2E4B11BPSA1 | 13 Weeks | 15 |
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Infineon Technologies AG FS75R07N2E4_B11Transistors |
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FS75R07N2E4_B11 | 3 |
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FS75R07N2E4 Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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FS75R07N2E4B11BOSA1 |
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Discrete Semiconductor Products - Transistors - IGBTs - Modules - MOD IGBT LOW PWR ECONO2-6 | Original | |||
FS75R07N2E4BOSA1 |
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Discrete Semiconductor Products - Transistors - IGBTs - Modules - MOD IGBT LOW PWR ECONO2-6 | Original | |||
FS75R07N2E4BPSA1 |
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LOW POWER ECONO AG-ECONO2B-411 | Original |
FS75R07N2E4 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FS75R07N2E4_B11 / |
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FS75R07N2E4 hteSperrspannungsfestigkeitauf650V | |
Contextual Info: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FS75R07N2E4_B11 EconoPACK 2模块采用第四代沟槽栅/场终止IGBT4和第四代发射极控制二极管 带有pressfit压接管脚和温度检测NTC |
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FS75R07N2E4 | |
FS300R12OE4P
Abstract: FS450R12OE4P FP06R12W1T4 F3L400R12PT4 bt 1690 scr fp150r07n3e4 F3L300R12PT4 Eupec thyristors catalog FF150R12RT4 Dz800S17ke3
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Contextual Info: IGC39T65T8M IGBT3 Chip Medium Power Features: • 650V Trench & Field Stop technology high short circuit capability, self limiting short circuit current positive temperature coefficient easy paralleling Qualified according to JEDEC for target |
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IGC39T65T8M L7572M, | |
Contextual Info: IGC39T65T8M IGBT3 Chip Medium Power Features: • 650V Trench & Field Stop technology high short circuit capability, self limiting short circuit current positive temperature coefficient easy paralleling Qualified according to JEDEC for target |
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IGC39T65T8M IEC62258-3 L7572M, | |
Contextual Info: SIDC20D65C8 Fast switching diode chip in EMCON 3 -Technology Features: • 650V EMCON 3 technology 65 µm chip • Soft, fast switching • Low reverse recovery charge • Small temperature coefficient • Qualified according to JEDEC for target applications |
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SIDC20D65C8 L4026C, |