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    FQU13N06L Search Results

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    FQU13N06L Price and Stock

    onsemi FQU13N06LTU-WS

    MOSFET N-CH 60V 11A IPAK
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    DigiKey FQU13N06LTU-WS Tube 23,558 1
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    Newark FQU13N06LTU-WS Bulk 957 1
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    Rochester Electronics FQU13N06LTU-WS 3,960 1
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    Flip Electronics FQU13N06LTU-WS 10,080
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    Flip Electronics FQU13N06LTU

    MOSFET N-CH 60V 11A IPAK
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    DigiKey FQU13N06LTU Tube 4,810
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    onsemi FQU13N06LTU

    MOSFET N-CH 60V 11A IPAK
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    DigiKey FQU13N06LTU Tube 5,040
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    Avnet Americas FQU13N06LTU Tube 0 Weeks, 2 Days 1,667
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    Verical FQU13N06LTU 5,353 845
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    FQU13N06LTU 3,088 845
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    Rochester Electronics FQU13N06LTU 8,441 1
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    TME FQU13N06LTU 1
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    Flip Electronics FQU13N06LTU 4,810
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    Aptina Imaging FQU13N06LTU_WS

    Trans MOSFET N-CH 60V 11A 3-Pin(3+Tab) IPAK Tube
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    Verical FQU13N06LTU_WS 3,960 475
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    Fairchild Semiconductor Corporation FQU13N06LTU

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    Bristol Electronics FQU13N06LTU 1,400
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    Quest Components FQU13N06LTU 1,120
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    ComSIT USA FQU13N06LTU 925
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    FQU13N06L Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FQU13N06L Fairchild Semiconductor 60 V Logic N-Channel MOSFET Original PDF
    FQU13N06LTU Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 11A IPAK Original PDF
    FQU13N06LTU Fairchild Semiconductor 60V N-Channel Logic level QFET Original PDF
    FQU13N06LTU_WS Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 11A IPAK Original PDF
    FQU13N06LTU-WS ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 11A IPAK Original PDF

    FQU13N06L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: QFET TM FQD13N06L / FQU13N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD13N06L FQU13N06L

    Untitled

    Abstract: No abstract text available
    Text: FQD13N06L / FQU13N06L N-Channel QFET MOSFET 60 V, 11 A, 115 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to


    Original     		PDF FQD13N06L FQU13N06L

    Untitled

    Abstract: No abstract text available
    Text: FQD13N06L / FQU13N06L N-Channel QFET MOSFET 60 V, 11 A, 115 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original     		PDF FQD13N06L FQU13N06L FQU13N06L

    FQD13N06L

    Abstract: FQU13N06L
    Text: FQD13N06L / FQU13N06L April 2000 QFET TM FQD13N06L / FQU13N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQD13N06L FQU13N06L FQU13N06L

    Untitled

    Abstract: No abstract text available
    Text: QFET TM FQD13N06L / FQU13N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD13N06L FQU13N06L FQU13N06L FQU13N06LTU O-251

    FQD13N06L

    Abstract: FQU13N06L A2JA
    Text: QFET FQD13N06L / FQU13N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD13N06L FQU13N06L FQU13N06L A2JA

    Untitled

    Abstract: No abstract text available
    Text: FQD13N06L / FQU13N06L N-Channel QFET MOSFET 60 V, 11 A, 115 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original     		PDF FQD13N06 FQU13N06 FQD13N06L FQU13N06L

    Untitled

    Abstract: No abstract text available
    Text: QFET FQD13N06L / FQU13N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD13N06L FQU13N06L

    Untitled

    Abstract: No abstract text available
    Text: FQD13N06L / FQU13N06L N-Channel QFET MOSFET 60 V, 11 A, 115 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original     		PDF FQD13N06L FQU13N06L

    Untitled

    Abstract: No abstract text available
    Text: FQD13N06L / FQU13N06L N-Channel QFET MOSFET 60 V, 11 A, 115 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original     		PDF FQD13N06L FQU13N06L

    FQD13N06L

    Abstract: FQU13N06L
    Text: QFET TM FQD13N06L / FQU13N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD13N06L FQU13N06L FQU13N06L

    Untitled

    Abstract: No abstract text available
    Text: QFET TM FQD13N06L / FQU13N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD13N06L FQU13N06L FQD13N06LTM FQD13N06LTF O-252

    FDC6331

    Abstract: fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305
    Text: Discrete Temperature range Software version Revision date 2N7002 SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A 2N7002MTF SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A BS170 TO-92-3 Electrical 25°C to 125°C Orcad 9.1 Mar 22, 2002 BSS123 SOT-23-3


    Original     		PDF 2N7002 2N7002MTF BS170 BSS123 BSS138 BSS84 FDB045AN08A0 FDB2532 FDB3632 FDB3652 FDC6331 fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


    Original     		PDF

    FQPF*7N65C APPLICATIONS

    Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		PDF UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237

    Untitled

    Abstract: No abstract text available
    Text: FQU20N06L N-Channel QFET MOSFET 60 V, 17.2 A, 42 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state


    Original     		PDF FQU20N06L

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    IRFU210A

    Abstract: IRFU230A FDU3706 FDU6030BL FDU6512A FDU6612A FDU6644 FDU6680A FDU6692 FDU7030BL
    Text: Discrete MOSFET TO-251 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-251(IPAK) N-Channel FDU3706 20 Single 0.009 0.011 0.016 - 16 50 44 FDU6512A 20 Single - 0.021 0.031


    Original     		PDF O-251 O-251 FDU3706 FDU6512A ISL9N308AD3 ISL9N312AD3 ISL9N306AD3 FDU6644 FDU6680A FDU7037P06 IRFU210A IRFU230A FDU3706 FDU6030BL FDU6512A FDU6612A FDU6644 FDU6680A FDU6692 FDU7030BL

    SSP6N60A

    Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
    Text: March 2002 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide March 2002 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . .2


    Original     		PDF SC70-6 OT-23) FDR8321L FDR8521L FDFS2P106A FDFS2P103 FDFS2P102 SSP6N60A IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A

    thermistor KSD201

    Abstract: pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		PDF TS-16949 ISO-14001, thermistor KSD201 pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd

    FQPf10N60C

    Abstract: FQPF*10n20c FQPF10N20C FQP17P06 fqpf6n80 FQP630 equivalent FQU17P06 FQPF*5n50c IRF650 FQA90N08
    Text: Discrete BGA BVDSS Min. V Config. 20 RDS(ON) Max (Ω) @ VGS = 10V 4.5V 2.5V 1.8V Qg Typ. (nC) @VGS = 5V Single – 0.027 0.039 – 7 6 1.7 20 Single – 0.018 0.03 – 11 7.5 1.6 FDZ201N 20 Single – 0.018 0.03 – 11 9 2 FDZ209N 60 Single – 0.08@5V


    Original     		PDF FDZ201N FDZ209N FDZ2553N FDZ2553NZ FDZ2551N FDZ7064N SFF9140 FQAF47P06 SSF10N60B SSF7N60B FQPf10N60C FQPF*10n20c FQPF10N20C FQP17P06 fqpf6n80 FQP630 equivalent FQU17P06 FQPF*5n50c IRF650 FQA90N08