FQI22P10 Search Results

FQB22P10

Abstract: FQI22P10
Contextual Info: QFET P-CHANNEL FQB22P10, FQI22P10 FEATURES BVqss = 00V Advanced New Design Rds ON = 0 1 25Î2 Avalanche Rugged Technology In = - 2 2 A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics d 2- p a k i 2- p a k Unrivalled Gate Charge: 40nC (Typ.)

FQB22P10

Abstract: FQI22P10
Contextual Info: FQB22P10 / FQI22P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: FQB22P10 / FQI22P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: QFET P-CHANNEL FQB22P10, FQI22P10 FEATURES BVDSS = • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 40nC Typ.

Contextual Info: QFET P-CHANNEL FQB22P10, FQI22P10 FEATURES BVDSS = −100V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 40nC Typ.

FQB22P10

Abstract: FQI22P10
Contextual Info: TM FQB22P10 / FQI22P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: QFET FQB22P10 / FQI22P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

FQB22P10

Abstract: FQI22P10
Contextual Info: QFET FQB22P10 / FQI22P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

FQB22P10

Abstract: FQI22P10
Contextual Info: FQB22P10 / FQI22P10 April 2000 QFET TM FQB22P10 / FQI22P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: FQB22P10 / FQI22P10 P-Channel QFET MOSFET -100 V, -22 A, 125 mΩ Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce

FDC6331

Abstract: fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305
Contextual Info: Discrete Temperature range Software version Revision date 2N7002 SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A 2N7002MTF SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A BS170 TO-92-3 Electrical 25°C to 125°C Orcad 9.1 Mar 22, 2002 BSS123 SOT-23-3

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

SSI5N60A

Abstract: FQI13N06 FQI20N06 FQI30N06 FQI50N06 FQI55N06 FQI65N06 FQI85N06 HUF75333S3 HUF75345S3
Contextual Info: Discrete MOSFET TO-262 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-262(I2PAK) N-Channel ISL9N303AS3 30 Single 0.0032 0.005 - - 61 75 215 HUF75345S3 55 Single 0.007 -

SSP6N60A

Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
Contextual Info: March 2002 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide March 2002 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . .2