CGH09120F Search Results

CGH09120F Price and Stock

Filter by Manufacturer


MACOM CGH09120F RF MOSFET HEMT 28V 440095
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CGH09120F	Tray			1	1 $299.15 10 $299.15 100 $299.15 1000 $299.15 10000 $299.15	Buy Now
Mouser Electronics	CGH09120F		40			1 $321.55 10 $321.55 100 $321.55 1000 $321.55 10000 $321.55	Buy Now
Richardson RFPD	CGH09120F				1	1 $466.66 10 $466.66 100 $466.66 1000 $466.66 10000 $466.66	Buy Now

CGH09120F Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
CGH09120F		Cree/Wolfspeed	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET HEMT 28V 440095		Original	PDF

CGH09120F Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
cgh09120f Abstract: ATC 600F lk 3058 3019 Transistor LTE AMPLIFIER Text: CGH09120F 120 W, UHF - 2.5 GHz, GaN HEMT for WCDMA, LTE, MC-GSM Cree’s CGH09120F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH09120F ideal for MC-GSM, WCDMA and LTE	Original	PDF	CGH09120F CGH09120F CGH0912 CGH09120F-TB ATC 600F lk 3058 3019 Transistor LTE AMPLIFIER
ATC600S Abstract: RO4003 CAP 0805 ATC 600F ATC 600F CGH0912 CGH09120F CGH09120F-TB JESD22 68-pF j 182 Text: CGH09120F 120 W, UHF - 2.5 GHz, GaN HEMT for WCDMA, LTE, MC-GSM Cree’s CGH09120F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH09120F ideal for MC-GSM, WCDMA and LTE	Original	PDF	CGH09120F CGH09120F CGH0912 ATC600S RO4003 CAP 0805 ATC 600F ATC 600F CGH0912 CGH09120F-TB JESD22 68-pF j 182
cgh09120f Abstract: 3019 Transistor Ro4003 Text: CGH09120F 120 W, UHF - 2.5 GHz, GaN HEMT for WCDMA, LTE, MC-GSM Cree’s CGH09120F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH09120F ideal for MC-GSM, WCDMA and LTE	Original	PDF	CGH09120F CGH09120F CGH0912 CGH09120F-TB 3019 Transistor Ro4003
Untitled Abstract: No abstract text available Text: CGH09120F 120 W, UHF - 2.5 GHz, GaN HEMT for WCDMA, LTE, MC-GSM Cree’s CGH09120F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH09120F ideal for MC-GSM, WCDMA and LTE	Original	PDF	CGH09120F CGH09120F CGH0912
ATC600S Abstract: 8029 l2 circuit CAP 0805 ATC 600F 8029 l2 CGH0912 CGH09120F CGH09120F-TB RO4003 amplifier TRANSISTOR 12 GHZ Text: PRELIMINARY CGH09120F 120 W, UHF - 2.5 GHz, GaN HEMT for WCDMA, LTE, MC-GSM Cree’s CGH09120F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH09120F ideal for MC-GSM, WCDMA and LTE	Original	PDF	CGH09120F CGH09120F CGH0912 ATC600S 8029 l2 circuit CAP 0805 ATC 600F 8029 l2 CGH0912 CGH09120F-TB RO4003 amplifier TRANSISTOR 12 GHZ
CGH09120F Abstract: CGH25120F CDPA21480 CGH27060F ofdm predistortion CGH55030F 440117 CGH21120F CGH21240F CGH27015F Text: Gallium Nitride GaN HEMT Transistors for BTS Applications Cree’s Doherty CDPA21480, performance. CGH21240F demonstration provides amplifier innovative The amplifier devices with uses digital two CDPA21480 Spectrum at 2.11, 2.14 & 2.17 GHz PAVE = 49 dBm, 2-Carrier WCDMA, PAR = 7.5 dB with CFR	Original	PDF	CDPA21480, CGH21240F CDPA21480 CGH09120F CGH25120F CGH27060F ofdm predistortion CGH55030F 440117 CGH21120F CGH21240F CGH27015F