CGH0912 Search Results

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MACOM CGH09120F RF MOSFET HEMT 28V 440095
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CGH09120F	Tray			1	1 $299.15 10 $299.15 100 $299.15 1000 $299.15 10000 $299.15	Buy Now
Mouser Electronics	CGH09120F		20			1 - 10 - 100 $321.55 1000 $321.55 10000 $321.55	Buy Now
Richardson RFPD	CGH09120F				1	1 $466.66 10 $466.66 100 $466.66 1000 $466.66 10000 $466.66	Buy Now

CGH0912 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
CGH09120F		Cree/Wolfspeed	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET HEMT 28V 440095		Original	PDF

CGH0912 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
cgh09120f Abstract: ATC 600F lk 3058 3019 Transistor LTE AMPLIFIER Text: CGH09120F 120 W, UHF - 2.5 GHz, GaN HEMT for WCDMA, LTE, MC-GSM Cree’s CGH09120F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH09120F ideal for MC-GSM, WCDMA and LTE	Original	PDF	CGH09120F CGH09120F CGH0912 CGH09120F-TB ATC 600F lk 3058 3019 Transistor LTE AMPLIFIER
ATC600S Abstract: RO4003 CAP 0805 ATC 600F ATC 600F CGH0912 CGH09120F CGH09120F-TB JESD22 68-pF j 182 Text: CGH09120F 120 W, UHF - 2.5 GHz, GaN HEMT for WCDMA, LTE, MC-GSM Cree’s CGH09120F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH09120F ideal for MC-GSM, WCDMA and LTE	Original	PDF	CGH09120F CGH09120F CGH0912 ATC600S RO4003 CAP 0805 ATC 600F ATC 600F CGH0912 CGH09120F-TB JESD22 68-pF j 182
cgh09120f Abstract: 3019 Transistor Ro4003 Text: CGH09120F 120 W, UHF - 2.5 GHz, GaN HEMT for WCDMA, LTE, MC-GSM Cree’s CGH09120F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH09120F ideal for MC-GSM, WCDMA and LTE	Original	PDF	CGH09120F CGH09120F CGH0912 CGH09120F-TB 3019 Transistor Ro4003
Untitled Abstract: No abstract text available Text: CGH09120F 120 W, UHF - 2.5 GHz, GaN HEMT for WCDMA, LTE, MC-GSM Cree’s CGH09120F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH09120F ideal for MC-GSM, WCDMA and LTE	Original	PDF	CGH09120F CGH09120F CGH0912
ATC600S Abstract: 8029 l2 circuit CAP 0805 ATC 600F 8029 l2 CGH0912 CGH09120F CGH09120F-TB RO4003 amplifier TRANSISTOR 12 GHZ Text: PRELIMINARY CGH09120F 120 W, UHF - 2.5 GHz, GaN HEMT for WCDMA, LTE, MC-GSM Cree’s CGH09120F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH09120F ideal for MC-GSM, WCDMA and LTE	Original	PDF	CGH09120F CGH09120F CGH0912 ATC600S 8029 l2 circuit CAP 0805 ATC 600F 8029 l2 CGH0912 CGH09120F-TB RO4003 amplifier TRANSISTOR 12 GHZ
CGH09120F Abstract: CGH25120F CDPA21480 CGH27060F ofdm predistortion CGH55030F 440117 CGH21120F CGH21240F CGH27015F Text: Gallium Nitride GaN HEMT Transistors for BTS Applications Cree’s Doherty CDPA21480, performance. CGH21240F demonstration provides amplifier innovative The amplifier devices with uses digital two CDPA21480 Spectrum at 2.11, 2.14 & 2.17 GHz PAVE = 49 dBm, 2-Carrier WCDMA, PAR = 7.5 dB with CFR	Original	PDF	CDPA21480, CGH21240F CDPA21480 CGH09120F CGH25120F CGH27060F ofdm predistortion CGH55030F 440117 CGH21120F CGH21240F CGH27015F