BGY582 Search Results

Contextual Info: Philips Semiconductors Li1353*131 00323ftM 255 CATV amplifier modules Product specification BGY582;BGY583 — • N AP1ER PHILIPS/DISCRETE FEATURES • • • • • IHAPX Excellent linearity Extremely low noise Silicon nitride passivation Rugged construction

BGY582

Abstract: BGY583 DIN45004B NECC-C-005 TM3E
Contextual Info: 7110û2b ODTlb'ìO 7G1 Philips Semiconduct RHIN CATV amplifier modules FEATURES PINNING -S O T 1 1 5 C PIN • Excellent linearity BGY582;BGY583 PIN CO NFIGURATION DESCRIPTION • Extremely low noise 1 input • Silicon nitride passivation 2 common • Rugged construction

BGY582

Abstract: BGY583 DIN45004B
Contextual Info: Product spécification Philips Semiconductors BGY582; BG Y583 CATV amplifier modules PINNING - SOT115C FEATURES DESCRIPTION PIN • Excellent linearity • Extremely low noise 1 input • Silicon nitride passivation 2 common • Rugged construction 3 common

Contextual Info: Philips Semiconductors Concise Catalogue 1996 RF & MICROWAVE SEMICONDUCTORS & MODULES MODULES CATV amplifiers CATV AMPLIFIER MODULES power gain type number dB composite triple beat (dB) output voltage (dBmV) total DC current consumption (mA) max 14 chs min

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

BGY582

Abstract: BGY583 DIN45004B
Contextual Info: Philips Semiconductors bbSBTBl 0035304 255 CATV amplifier modules — ^ • Extrem ely low noise 1 input • Silicon nitride passivation 2 comm on • Rugged construction 3 comm on • Optim al reliability ensured by 5 +VB TiPtAu m etallized crystals. 7 comm on

bf0262a

Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
Contextual Info: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A

BGY87

Abstract: BGY580 BGY88 bgy88 PHILIPS
Contextual Info: 71 RF/Microwave Devices CATV Amplifier Modules Type Number Figure dB Composite Triple Beat (dB) max 22 chs21 max @ 200 MHz max @ 10 MHz 13 18.5 22 24 -68 -68 -67 -67 7.0 5.5 5.5 5.5 230 230 230 230 max 60 chs5i max @ 450 MHz max @ 50MHz 230 330 200 240 200

transistor f6 13003

Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.

BGY41

Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.

BGY788

Abstract: receiver philips fr 310 mhw612 BGY588 equivalent bgy88 PHILIPS mhw5342a MHW6172 MHW7222 BGY65 BGY67
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET Selection guide Wideband Hybrid Amplifier Modules 1998 Mar 19 File under Discrete Semiconductors, SC16 Philips Semiconductors Wideband Hybrid Amplifier Modules TYPE NUMBER POWER GAIN dB Selection guide SLOPE FLATNESS RETURN LOSS