transistor marking zg
Abstract: BF579 BF579R HF transistor
Text: BF 579 / BF 579 R TELEFUNKEN Semiconductors Silicon PNP Planar HF Transistor Applications UHF/VHF uncontrolled prestages with low noise and low cross modulation. Features D High transition frequency D Low disortation 1 2 1 3 3 2 94 9280 BF579 Marking Plastic case SOT 23
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BF579
BF579R
D-74025
transistor marking zg
HF transistor
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Untitled
Abstract: No abstract text available
Text: BF579 / BF579R VISHAY Vishay Semiconductors Silicon PNP Planar RF Transistor 1 Features • High transition frequency • Low distortion BF579 2 Applications 3 1 UHF/VHF uncontrolled prestages with low noise and low cross modulation. BF579R 3 Mechanical Data
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BF579
BF579R
BF579
OT-23
BF579R
D-74025
20-Aug-04
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BF579
Abstract: BF579R marking GG
Text: BF579/BF579R Vishay Semiconductors Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF/VHF uncontrolled prestages with low noise and low cross modulation. Features D High transition frequency
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BF579/BF579R
BF579
BF579R
D-74025
20-Jan-99
marking GG
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BF579
Abstract: BF579R marking GG
Text: BF579/BF579R Vishay Telefunken Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF/VHF uncontrolled prestages with low noise and low cross modulation. Features D High transition frequency D Low distortion
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BF579/BF579R
BF579
BF579R
D-74025
20-Jan-99
marking GG
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BF579
Abstract: BF579R marking GG
Text: BF579/BF579R Vishay Telefunken Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF/VHF uncontrolled prestages with low noise and low cross modulation. Features D High transition frequency D Low distortion
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Original
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BF579/BF579R
BF579
BF579R
D-74025
20-Jan-99
marking GG
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Untitled
Abstract: No abstract text available
Text: BF579 Transistors Bipolar PNP UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)20 I(C) Max. (A)25m Absolute Max. Power Diss. (W)250m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)15
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BF579
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Untitled
Abstract: No abstract text available
Text: Not for new design, this product will be obsoleted soon BF579 / BF579R Vishay Semiconductors Silicon PNP Planar RF Transistor 1 Features • • • • BF579 High transition frequency Low distortion Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
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BF579
BF579R
2002/95/EC
2002/96/EC
BF579
OT-23
BF579R
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BF579
Abstract: No abstract text available
Text: BF579 / BF579R Vishay Semiconductors Silicon PNP Planar RF Transistor 1 Features • • • • High transition frequency Low distortion Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC BF579 e3 2 3 1 BF579R Applications
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BF579
BF579R
2002/95/EC
2002/96/EC
BF579
OT-23
BF579R
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BF579
Abstract: BF579R
Text: BF579 / BF579R Vishay Semiconductors Silicon PNP Planar RF Transistor 1 Features • • • • High transition frequency Low distortion Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC BF579 e3 2 3 1 BF579R Applications
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BF579
BF579R
2002/95/EC
2002/96/EC
BF579
OT-23
BF579R
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PDF
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Untitled
Abstract: No abstract text available
Text: BF579R Transistors Bipolar PNP UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)25 I(C) Max. (A)30m Absolute Max. Power Diss. (W)220m Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)
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BF579R
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marking GG
Abstract: BF579 BF579R Low Noise uhf transistor marking A1 TRANSISTOR
Text: BF579/BF579R Silicon PNP Planar HF Transistor Applications UHF/VHF uncontrolled prestages with low noise and low cross modulation. Features D High transition frequency D Low disortation 1 2 1 3 3 94 9280 BF579 Marking: G7 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter
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BF579/BF579R
BF579
BF579R
D-74025
15-Apr-96
marking GG
Low Noise uhf transistor
marking A1 TRANSISTOR
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BF579
Abstract: BF579R
Text: BF579/BF579R Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF/VHF uncontrolled prestages with low noise and low cross modulation. Features D High transition frequency D Low disortation 1 1
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BF579/BF579R
BF579
BF579R
D-74025
31-Oct-97
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2SC3355 SPICE MODEL
Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness
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F2002:
F2003:
F2004:
2SC3355 SPICE MODEL
transistor C2003
C319B
MGF1412
RF TRANSISTOR 10GHZ
MRF134 rf model .lib file
2SK571
MGF1402
MRF9331
pb_hp_at41411_19921101
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BF963
Abstract: 1N4004 SOD-123 BC547 smd BB409 2n2907 smd BAT16-046 1N4148 2N2907 SOT-23 1N4148 SOD-123 2n2222 smd
Text: Cross Reference Leaded Devices SMD-Packages SOD-123 1N4001 1N4002 1N4003 1N4004 1N4001 2x 1N4002 (2x) 1N4003 (2x) 1N4004 (2x) 1N4148 1N4148 (2x) SOD-323 SCD-80 SOT-23 SOT-323 SOT-343 SOT-363 SCT-595 BAW 78 M BAS 16-02W BAS 16-03W BAS16 BAL/BAR74 BAL/BAR99
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OD-123
1N4001
1N4002
1N4003
1N4004
1N4148
BF963
1N4004 SOD-123
BC547 smd
BB409
2n2907 smd
BAT16-046
1N4148
2N2907 SOT-23
1N4148 SOD-123
2n2222 smd
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Untitled
Abstract: No abstract text available
Text: Temic BF579/BF579R S e m i c o n d u c t o r s Silicon PNP Planar RF Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications UHF/VHF uncontrolled prestages with low noise and low cross modulation. Features • High transition frequency
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OCR Scan
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BF579/BF579R
BF579
BF579R
D-74025
31-Oct-97
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BF519
Abstract: BF579 MBB018
Text: PHILIPS INTERNATIONAL MIE D m 711002b -OGSTQlb 3 B P H I N BF579 T ' 3>- / 7 SILICON PLANAR TRANSISTOR P-N-P transistor in a microminiature envelope primarily intended for u.h.f. applications in thick and thin-film circuits. Q U IC K R E F E R E N C E D A T A
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711002b-OGSTQlb
BF579
T-31-17
BF519
BF579
MBB018
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BF579
Abstract: No abstract text available
Text: ViSHAY BF579/BF579R ▼ Vishay Telefunken Silicon PNP Planar RF Transistor E lectrostatic sensitive device. O bserve precautions fo r handling. ^ Applications U H F/VH F uncontrolled prestages w ith low noise and low cross m odulation. Features • High transition frequency
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BF579/BF579R
BF579
BF579R
D-74025
20-Jan-99
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PDF
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BF579
Abstract: marking GG BF579R
Text: Temic BF579/BF579R S e m i c o n d u c t o r s Silicon PNP Planar RF Transistor Applications UHF/VHF uncontrolled prestages with low noise and low cross modulation. Features • High transition frequency • Low disortation 1 _EL R H ^ 2 FT 94 9280 — B 3
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OCR Scan
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BF579/BF579R
BF579R
BF579
10-Mar-97
marking GG
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PDF
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BF579
Abstract: No abstract text available
Text: N AMER P H I L I P S / D I S C R E T E OhE D • ^^53=131 0015750 T ■ BF579 SILICON PLANAR TRANSISTOR P-N-P transistor in a microminiature envelope primarily intended for u.h.f. applications in thick and
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001S75D
BF579
800MHz
BF579
T-31-15
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BFT97
Abstract: Siemens 1985 BFT65 bfr91a siemens BFQ64P BFT98T BFS55A bf254 BFR96S
Text: S IE M E N S / SPCLt SEMICONDS ' ' ?QC D • fiS 3b 3E Q 0013325 1 ■ RF Transistors Type PNP= P NPN= N Typical Application epitaxial=E planar = PL E, PL Maximum Ratings Vcbo V VcEO (V) ^80 (V) (mA) fe ft (°C) 40 25 4 25 150 Plot (mW) (°C/W) 500 N Uncontrolled TV IF amplifier stages
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BF199
BF240
BF241
BF254
BF255
BF414
BF420
BF420L
BF421
BF421L
BFT97
Siemens 1985
BFT65
bfr91a siemens
BFQ64P
BFT98T
BFS55A
BFR96S
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S852T
Abstract: BF579 T0-50 BF964S BF96 BFP183T
Text: Tem ic Semiconduct ors Selector Guide Dual-Gate Si-MOSFETs N-Channel Depletion Mode Number BF961 BF964S BF966S BF988 BF994S BF995 BF996S BF998 S525T S888T VD5 V 20 20 20 12 20 20 20 12 20 10 lümax mA 30 30 30 30 30 30 30 30 30 20 Iy2isl at Ids mA mS 15
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BF961
BF964S
BF966S
BF988
BF994S
BF995
BF996S
BF998
S525T
S888T
S852T
BF579
T0-50
BF96
BFP183T
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s525
Abstract: s918 BF988 bfr96ts S858TA3 BF-970 BFP183T
Text: Tem ic Semiconductors General Information Alphanumeric Index Type. T ype . Type. Type . BFR90A 9, 243 S593T 8, 105 BFR91 9, 250 S594T 8, 112 9, 163 BFR91A . . . . 9, 256 S595T 8, 119 BFP81 9, 173 BFR92 S822T 9, 338 8. 52
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BF569
BF579
BF961
BF964S
BF966S
BF970
BF979
BF988
BF994S
BF995
s525
s918
bfr96ts
S858TA3
BF-970
BFP183T
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marking NC sot23
Abstract: smd code marking sot23 RF Transistors sot-23 marking code LA SMD sot-23 MARKING CODE N C SMD MARKING CODE FEW SMD Transistors nc SOT SMD IC smd code marking 3 1 sot23 BF579
Text: HIGH FREQUENCY SMD TRANSISTORS DESCRIPTION •Philips Components high-frequency transistors fill the gap between general purpose transistors and broadband transistors by offering transition frequencies from a few hundred megahertz to about 1 gigahertz. Applications
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OCR Scan
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OT-23
BFS18
BFS19
BFS20
BF840
BF841
BF579
BF536
BF767
BF824
marking NC sot23
smd code marking sot23
RF Transistors sot-23
marking code LA SMD
sot-23 MARKING CODE N C
SMD MARKING CODE FEW
SMD Transistors nc
SOT SMD IC
smd code marking 3 1 sot23
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Untitled
Abstract: No abstract text available
Text: H IGH FREQUENCY SM D TRANSISTORS DESCRIPTION • Philips Components high-frequency transistors fill the gap between general purpose transistors and broadband transistors by offering transition frequencies from a few hundred megahertz to about 1 gigahertz. Applications
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OCR Scan
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OT-23
BF579
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