AM29F040 Search Results

am29f040b

Contextual Info: AMD3 Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory Distinctive Characteristics • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements ■ Manufactured on 0.32 pm process technology

df1818

Contextual Info: WED7F325ZXE5SJ-C/A 512Kx32 5V FLASH MODULE PRELIMINARY* FEATURES • Access Times of 60, 90ns ■ Commercial and Industrial Temperature Ranges ■ Based on AMD: AM29F040B-xxEC ■ 5 Volt Programming. 5V ± 10% Supply ■ Packaging ■ Low Power CMOS, 500µA Standby

AM29F040B

Contextual Info: PRELIMINARY A M D ii Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory Distinctive Characteristics • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements ■ Manufactured on 0.35 pm process technology

am29f040b

Abstract: Publication# 19957 Am29F040
Contextual Info: PRELIMINARY Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Manufactured on 0.35µm process technology

Contextual Info: EDI7F33512C White Electronic Designs 512Kx32 FLASH FIG.1 BLOCK DIAGRAMS The EDI7F33512, EDI7F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29F040 - 512Kx8 Flash Device in TSOP packages which are

am29f040b

Contextual Info: Am29F040B Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

Am29F040

Abstract: 29F040 17113
Contextual Info: CONDENSED ADVANCE INFORMATION Advanced Micro Devices Am29F040 524,288 x 8-Bit CMOS 5.0 V-Only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • ■ ■ ■ ■ ■ 5.0 V ± 10% write and erase - Minimizes system level power requirements Compatible with JEDEC-standard commands

AM29F040B-120

Abstract: AM29F040B-55 AM29F040B-70 AM29F040B-90 IN3064
Contextual Info: Am29F040B Data Sheet Retired Product Am29F040B Cover Sheet This product has been retired and is not recommended for designs. Please contact your Spansion representative for alternates. Availability of this document is retained for reference and historical purposes only.

AM29F040B

Abstract: AM29F040B-70 AM29F040B-55 AM29F040B-1505
Contextual Info: A M D tl Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements ■ — Embedded Erase algorithm automatically

Am29F040

Contextual Info: Data Sheet 124376 FlashLite Byte-W ide M em ory C a rd — A M D A M 29F040 JUNE 95 REV A Product Features • Thin Profile— PCMCIA Type I Package, 3.3 mm Thick ■ Memory Capacity of 512 KByte, based on AMD AM29F040 Flash Technology ■ Eight Equal Size Sectors of 64 KBytes each

AMD Series D flash memory card

Abstract: Am29F040 AMD marking CODE flash
Contextual Info: PCMCIA Flash Memory Card FLC Series White Electronic Designs 1 MEGABYTE through 10 MEGABYTE AMD based FEATURES The WEDC FLC series is based on AMD Am29F040 Flash memories; the FLC04 is a direct equivalent of AMD’s AmC0XXCFLKA, however it offers wider range of

17113e

Abstract: Am29F040 Max 17113 29F040 amd 29f040 AMD date code 29f040
Contextual Info: FINAL Am29F040 4 Megabit 524,288 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Compatible with JEDEC-standards — Pinout and software compatible with singlepower-supply Flash

AM29F040A

Abstract: 17113D-4 AMD date code 29f040 Am29F040
Contextual Info: a Am29F040 4 Megabit 524,288 x 8-Bit CMOS 5.0 Volt-oniy, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ ■ ■ ■ ■ — Minimizes system level power requirements Compatible with JEDEC-standards

29f040b

Abstract: 29F040B70 AM29F040B
Contextual Info: AMDH Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V + 10% for read and write operations ■ Embedded Algorithms — Minimizes system level power requirements — Embedded Erase algorithm automatically

AM29F040B-55

Abstract: AM29F040B-70 AM29F040B-90 IN3064 plcc 28 spansion Publication# 19957 Am29F040 AM29F040B am29f040b e7
Contextual Info: Am29F040B Data Sheet Am29F040B Cover Sheet The following document contains information on Spansion memory products. Continuity of Specifications There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been

367 al

Abstract: CQ31 9020 11 ak 30 a4 51b7 Amos Flash SIMM 80 AM29F040 EDI7F33512C
Contextual Info: ^EDI EDI7F33512C 512KX32 Flash ELECTRONIC DESIGNS INC 512Kx32 Flash The EDI7F33512, EDI7F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29F040 - 512Kx8 Flash Device in TSOP Block Diagrams

AM29F040B-120

Abstract: AM29F040B-150 AM29F040B-55 AM29F040B-70 AM29F040B-90 IN3064 CS39S
Contextual Info: Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Manufactured on 0.32 µm process technology — Compatible with 0.5 µm Am29F040 device

17113e

Abstract: AM29F040 amd 29f040 29F040 17113E-14
Contextual Info: AMD£I Am29F040 4 Megabit 524,288 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ ■ Compatible with JEDEC-standards — Pinout and software compatible with singlepower-supply Flash

Contextual Info: EDI7F33512C 512Kx32 Flash DESCRIPTION FIG. 1 The EDI7F33512, EDI7F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29F040 - 512Kx8 Flash Device in TSOP packages which are mounted on an FR4 substrate.

Am29F040

Contextual Info: PRELIMINARY Am29F040 Advanced Micro Devices 4 Megabit 524,288 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% read, write, and erase — Minimizes system level power requirements ■ Compatible with JEDEC-standard commands

Contextual Info: AMDH Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Mem ory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Manufactured on 0.32 pm process technology

Maxim 17113

Abstract: 29F040 29F040 equivalent
Contextual Info: P R E L IM IN A R Y Am29F040 Advanced Micro Devices 4 Megabit 524,288 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% read, write, and erase ■ — M inimizes system level power requirements ■ ■ Em bedded Program Algorithm s

3251b

Abstract: Am29F040 29F040 3251L AM29F040-75JC AM29F040A
Contextual Info: P R E L IM IN A R Y Am29F040 Advanced Micro Devices 4 Megabit 524,288 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% read, write, and erase ■ — Minimizes system level power requirements ■ Com patible w ith JEDEC-standard com mands

am29f0408

Abstract: 17113e AM29F040 29F040
Contextual Info: AMD£I Am29F040 4 Megabit 524,288 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements ■ Compatible with JEDEC-standards — Pinout and software compatible with singlepower-supply Flash