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    90N20Q Price and Stock

    IXYS Corporation IXFX90N20Q

    MOSFET N-CH 200V 90A PLUS247-3
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    Component Electronics, Inc IXFX90N20Q 1,185
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    IXYS Corporation IXFK90N20Q

    MOSFET N-CH 200V 90A TO264AA
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    IXYS Corporation IXFR90N20Q

    MOSFETs 90 Amps 200V 0.025 Rds
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    90N20Q Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFX 90N20Q IXFK 90N20Q VDSS ID25 = 200 V = 90 A = 22mW Q-CLASS RDS on Single MOSFET Die trr £ 200 ms N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Preliminary data Symbol Test Conditions


    Original     		90N20Q 90N20Q 247TM O-264 PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFX 90N20Q IXFK 90N20Q VDSS ID25 = = = 200 V 90 A Ω 22 mΩ Q-CLASS RDS on Single MOSFET Die trr ≤ 200 µs N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Symbol Test Conditions Maximum Ratings


    Original     		90N20Q 247TM 728B1 PDF

    ax2002

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFET Power MOSFETs V DSS IXFK 90N20Q IXFX 90N20Q ^D25 R Q Class DS on = 200 V = 90 A = 22 m ii t < 200 ns N-Channel Enhancement Mode Avalanche Rated Low Q High dv/dt,Low t Symbol Test C onditions M axim um Ratings V OSS


    OCR Scan     		90N20Q 90N20Q 247TM ax2002 PDF

    Untitled

    Abstract: No abstract text available
    Text: IPIXYS Advanced Technical Information IXFK 90N20Q IXFX 90N20Q HiPerFET Power MOSFETs Q Class = 200 V = 90 A DSS ^D25 P DS on * rr = 2 2 m ß < 200 ns N-Channel Enhancement Mode Avalanche Rated Low Qg High dv/dt,Low trr Symbol Test Conditions Maximum Ratings


    OCR Scan     		90N20Q 90N20Q to150 O-264AA PLUS247TM PDF

    IXFX 90N20Q

    Abstract: 90N20Q 90n20
    Text: HiPerFETTM Power MOSFETs IXFX 90N20Q IXFK 90N20Q VDSS ID25 = = = 200 V 90 A Ω 22 mΩ Q-CLASS RDS on Single MOSFET Die trr ≤ 200 µs N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Symbol Test Conditions Maximum Ratings


    Original     		90N20Q 247TM 728B1 123B1 728B1 065B1 IXFX 90N20Q 90N20Q 90n20 PDF

    IXFX 90N20Q

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFX 90N20Q IXFK 90N20Q VDSS ID25 = 200 V = 90 A = 22mW Q-CLASS RDS on Single MOSFET Die trr £ 200 ms N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Preliminary data Symbol Test Conditions


    Original     		90N20Q 90N20Q 247TM O-264 IXFX 90N20Q PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFET TM Power MOSFETs IXFX 90N20Q IXFK 90N20Q VDSS ID25 = = = 200 V 90 A 22 mW Q-CLASS RDS on Single MOSFET Die trr £ 200 ms N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Symbol


    Original     		90N20Q 247TM Ratin70 PDF

    90N20Q

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFX 90N20Q IXFK 90N20Q VDSS ID25 = = = 200 V 90 A Ω 22 mΩ Q-CLASS RDS on Single MOSFET Die trr ≤ 200 µs N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Symbol Test Conditions Maximum Ratings


    Original     		90N20Q 247TM 728B1 90N20Q PDF

    IXFX 90N20Q

    Abstract: 90N20Q
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFX 90N20Q IXFK 90N20Q VDSS ID25 = = = 200 V 90 A Ω 22 mΩ Q-CLASS RDS on Single MOSFET Die trr ≤ 200 µs N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX)


    Original     		90N20Q 247TM IXFX 90N20Q 90N20Q PDF

    transistor 12n60c

    Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
    Text: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design


    Original     		ISOPLUS247TM ISOPLUS247TM PLUS247TM-package FBO16-08N FBE22-06N1 21-05QC 22-08N 75-01F 21-08i01 transistor 12n60c 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET PDF

    12N60c equivalent

    Abstract: 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q
    Text: ISOPLUS Family ISOPLUS220 ISOPL US247™ ISOPLUS ¡4-PAC™ IS O P LU S 22rM Isolated Discrete Packages IS O P LU S 247™ is th e D C B is o la te d version o f th e P L U S 247™ -package TO 2 4 7 w ith o u t a m o u n tin g h o le . T h e d e s ig n o f th is n e w p a c k a g e (p a te n t


    OCR Scan     		ISOPLUS220TM US247TM 247TM ISOPLUS22rM ISOPLUS227TM IXFE180N10 IXFE73N30Q IXFE48N50Q IXFE48N50QD2 12N60c equivalent 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q PDF

    ixys ixfn 55n50

    Abstract: 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60
    Text: i , i - •*.*• - f _ _ , ; . ' x' r < r • Z* i't- y V ' -_ « i W^ | Contents V DSS max ^Otfcont Tc = 2 5 “C □ DS<ön) Tc = 25 °C V A il 60 76 0.011 0.012 200 0.006 76 0.011 0.012 200 0.006 67 75 0.025 0.02 150 0.012 170 0.01


    OCR Scan     		O-247 O-247 T0-204 O-264 O-264 76N06-11 75N06-12 110N06 76N07-11 76N07-12 ixys ixfn 55n50 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60 PDF

    C1162

    Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


    Original     		O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 26n60 60N25 C1328 120N20 C1146 C1104 C1158 PDF

    sd 20n60

    Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
    Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06


    Original     		O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 76N07-11 76N07-12 100N10 170N10 sd 20n60 IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80 PDF

    C1146

    Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


    Original     		O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1146 C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60 PDF

    C1218

    Abstract: C1222 ixfh 60N60 IXFX 44N80 C1138 C1238 20n80 C1228 C1172 IXFN 230N10 230N10
    Text: HiPerFET F-Series - . IXYS - - . •■ ■ ■ »♦ ■■ * 3* ■ V . Contents v DSS max V D ^CKcont DS on) Tc = 25 °C Tc = 25 °C A a TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247™ (IXFR) TO-268


    OCR Scan     		67N10 75N10 75N10Q 80N10Q O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 C1218 C1222 ixfh 60N60 IXFX 44N80 C1138 C1238 20n80 C1228 C1172 IXFN 230N10 230N10 PDF