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    900156 Search Results

    900156 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    87900-156HLF Amphenol Communications Solutions BergStik® 2.54mm, Board to Board connector, Unshrouded Header, Through Hole, Double Row, 56 Positions, 2.54 mm Pitch, Vertical, 18.29 mm (0.72in) Mating, 3.05 mm (0.12in) Tail. Visit Amphenol Communications Solutions
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    900156 Price and Stock

    API Delevan CM9900-156

    CMC 15MH 270MA 2LN TH
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    Amphenol Communications Solutions 87900-156HLF

    CONN HEADER VERT 56POS 2.54MM
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    Mill-Max Mfg Corp 800-90-015-62-001000

    CONN HEADER VERT 15POS 2.54MM
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    DigiKey 800-90-015-62-001000 Bulk 50
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    Mill-Max Mfg Corp 800-90-015-61-001000

    CONN HEADER VERT 15POS 2.54MM
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    DigiKey 800-90-015-61-001000 Bulk 50
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    RS 800-90-015-61-001000 Bulk 50
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    Sager 800-90-015-61-001000 50
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    Qualcomm QCA-9990-0-156DRQFN-MT-06-0

    QCA9990 (006-0), 156DRQFN, DIGIT
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    DigiKey QCA-9990-0-156DRQFN-MT-06-0 Tray 1,000
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    900156 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    hx6228

    Abstract: MIL-PRF38535
    Text: Military & Space Products 128K x 8 STATIC RAM—SOI HX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 µm Process (Leff = 0.55 µm) • Read/Write Cycle Times ≤ 16 ns (Typical) ≤ 25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(SiO2)


    Original
    HX6228 1x106 1x1011 1x1012 1x10-10 32-Lead hx6228 MIL-PRF38535 PDF

    HX6228

    Abstract: MIL-PRF38535
    Text: Military & Space Products 128K x 8 STATIC RAM—SOI HX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 µm Process (Leff = 0.55 µm) • Read/Write Cycle Times ≤ 16 ns (Typical) ≤ 25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(SiO2)


    Original
    HX6228 1x106 1x1011 1x1012 1x10-10 32-Lead HX6228 MIL-PRF38535 PDF

    HX6228

    Abstract: MIL-PRF38535
    Text: Military & Space Products 128K x 8 STATIC RAM—SOI HX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 µm Process (Leff = 0.55 µm) • Read/Write Cycle Times ≤ 16 ns (Typical) ≤ 25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(SiO2)


    Original
    HX6228 1x106 1x1011 1x1012 1x10-10 32-Lead HX6228 MIL-PRF38535 PDF

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products 128K x 8 STATIC RAM—SOI HX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 |im Process (Lef1= 0.55 ^m) • Read/Write Cycle Times < 16 ns (Typical) <2 5 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(Si02)


    OCR Scan
    HX6228 1x106 1x101 1x109 32-Lead PDF

    900156

    Abstract: HX6228 smd a7 transistor
    Text: Honeywell Military & Space Products HX6228 128K x 8 STATIC RAM—SOI FEATURES RADIATION OTHER • Fabricated with RICMOS’“ IV Silicon on Insulator SOI 0.7 |im Process (LeN= 0.55 |im) • Read/Write Cycle Times < 16 ns (Typical) <25 ns (-55 to 125°C)


    OCR Scan
    1x106 1x101 1x109 HX6228 32-Lead 40-Lead 125JC, 900156 HX6228 smd a7 transistor PDF

    Transistors smd A7H

    Abstract: HX6228
    Text: Honeywell Military & Space Products 128K x 8 STATIC RAM—SOI HX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 |a,m Process (Leff= 0.55 |a,m) • Read/Write Cycle Times < 16 ns (Typical) < 2 5 ns (-55 to 125°C)


    OCR Scan
    1x106 1x101 HX6228 32-Lead Transistors smd A7H HX6228 PDF

    Transistors smd A7H

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products 128K x 8 STATIC RAM—SOI HX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 p.m Process (Lefl= 0.55 |xm) • Read/Write Cycle Times < 16 ns (Typical) < 25 ns (-55 to 125°C)


    OCR Scan
    HX6228 1x101 Transistors smd A7H PDF

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products 128K x 8 STATIC RAM—SOI HX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 n.m Process (Leff= 0.55 |om) • Read/Write Cycle Times < 16 ns (Typical) <25 ns (-55 to 125°C) • Total Dose Hardness through 1x10 rad(Si02)


    OCR Scan
    1x101 HX6228 32-Lead 40-Leasistance, PDF