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    9 BIT SIMM PINS Search Results

    9 BIT SIMM PINS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CS-DSDMDB09MF-010 Amphenol Cables on Demand Amphenol CS-DSDMDB09MF-010 9-Pin (DB9) Deluxe D-Sub Cable - Copper Shielded - Male / Female 10ft Datasheet
    CS-DSDMDB15MF-002.5 Amphenol Cables on Demand Amphenol CS-DSDMDB15MF-002.5 15-Pin (DB15) Deluxe D-Sub Cable - Copper Shielded - Male / Female 2.5ft Datasheet
    CS-DSDMDB15MM-025 Amphenol Cables on Demand Amphenol CS-DSDMDB15MM-025 15-Pin (DB15) Deluxe D-Sub Cable - Copper Shielded - Male / Male 25ft Datasheet
    CS-DSDMDB25MM-010 Amphenol Cables on Demand Amphenol CS-DSDMDB25MM-010 25-Pin (DB25) Deluxe D-Sub Cable - Copper Shielded - Male / Male 10ft Datasheet
    CS-DSDMDB37MM-002.5 Amphenol Cables on Demand Amphenol CS-DSDMDB37MM-002.5 37-Pin (DB37) Deluxe D-Sub Cable - Copper Shielded - Male / Male 2.5ft Datasheet

    9 BIT SIMM PINS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    KMM49256

    Abstract: No abstract text available
    Text: MEMORY MODULES KMM49256/KMM59256 2 5 6 K x 9 Bit DRAM SIP and SIMM Memory Modules FEATURES GENERAL DESCRIPTION • 262,144 x 9-bit Organization _ • Ninth device has separate 0 , Q and CAS for Parity applications. • Performance range: The S am sung KMM49256 and KMM59256 is 256K x 9


    OCR Scan     		KMM49256/KMM59256 KMM49256-12 KMM59256-12 KMM49256-15 KMM59256-15 120ns 150ns 230ns KMM49256 PDF

    MCM94256AS10

    Abstract: MA2180
    Text: MOTOROLA SEM ICO NDUCTO R TECHNICAL DATA MCM94256A 256K x 9 Bit Dynamic Random Access Memory Module The MCM94256AS is a 2.25M bit, dynamic random access memory DRAM module organized as 262,144 x 9 bits. The module is a 30-lead single-in-line memory module (SIMM) consisting of two MCM514256A


    OCR Scan     		MCM94256A MCM94256AS 30-lead MCM514256A 4256A MCM94256AS10 MA2180 PDF

    EADS-80

    Abstract: No abstract text available
    Text: TM4100EAD9 4194304 BY 9-BIT DYNAMIC RAM MODULE SMMS419C - NOVEMBER 1991 - REVISED JUNE 1995 Organization . . . 4194304 x 9 SINGLE IN-LINE MODULE Single 5-V Power Supply ±10% Tolerance (TOP VIEW) 30-Pin Single In-Line Memory Module (SIMM) for Use With Sockets


    OCR Scan     		TM4100EAD9 SMMS419C 30-Pin 4100EAD9-60 4100EAD9-70 4100EAD9-80 EADS-80 PDF

    41C1000

    Abstract: KMM591000AN 41C1000BJ
    Text: MM591000AN DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 591000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung KMM591 OOOAN consist of two 4M bit DRAMs KM 44C1000AJ - 1M X 4 in 20-pin SOJ package and


    OCR Scan     		MM591000AN 591000AN KMM591 44C1000AJ 20-pin 41C1000BJ 30-pin 22jiF KMM591OOOAN 41C1000 KMM591000AN PDF

    KM41C1000AJ

    Abstract: KM41C1000 KMM591000
    Text: MEMORY MODULES KMM491000A/KMM591000A 1 M x 9 DRAM SIP and SIMM Memory Modules FEATURES GENERAL DESCRIPTION _ • 1,048,576 x 9-bit Organization • Ninth device has separate D, Q and CAS or Parity applications. • Performance range: The Samsung KMM491000A and KMM591000A are


    OCR Scan     		KMM491000A/KMM591000A KMM491000A-8 KMM591000A-8 KMM491000A-10 KMM591000A-10 100ns 150ns 180ns KM41C1000AJ KM41C1000 KMM591000 PDF

    KMM5916000

    Abstract: No abstract text available
    Text: KMM5916000/T DRAM MODULES 16 M x 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5916000/T is a 16M bit x 9 Dynamic RAM high density memory module. The Samsung KMM5916000/T consist of nine KM41C16000rr DRAMs


    OCR Scan     		KMM5916000/T KMM5916000-6 KMM5916000-7 KMM5916000-8 110ns 130ns 150ns KMM5916000/T KM41C16000rr KMM5916000 PDF

    Untitled

    Abstract: No abstract text available
    Text: KMM59256BN DRAM MODULES 2 5 6 K X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 59256BN is a 2 6 2 ,1 4 4 bit X 9 Dynamic RAM high density memory module. The Sam­ sung KM M 59256BN consist of two 1M bit DRAMs


    OCR Scan     		KMM59256BN 59256BN 44C256BJ 20-pin 256J-256K 18-pin 30-pin 59256BN- 130ns PDF

    KMM59256-12

    Abstract: KMM59256 KMM49256 M492
    Text: SAMSUNG SEMICONDUCTOR INC ?= ib m 4a o o o a a is t 53E D • MEMORY MODULES KMM49256/KMM59256 2 5 6 K x 9 Bit DRAM SIP and SIMM Memory Modules FEATURES GENERAL DESCRIPTION • 262,144 x 9-bit Organization • N inth device has separate D, Q and CAS or Parity


    OCR Scan     		KMM49256/KMM59256 KMM49256-12 KMM59256-12 KMM49256-15 KMM59256-15 120ns 150ns 230ns KMM59256 KMM49256 M492 PDF

    YL-69

    Abstract: No abstract text available
    Text: NEC Electronics Inc. MC-421000A9 1,048,576 X 9-Bit Dynamic CMOS RAM Module Description Pin Configurations The M C-421000A9 is a fas t-p a g e 1,048,576-word by 9-bit dynam ic RAM m odule designed to o perate from a single + 5-volt pow er supply. 30-Pin Leaded SIMM MC-421000A9A/AA/AB


    OCR Scan     		MC-421000A9 C-421000A9 576-word 30-Pin MC-421000A9A/AA/AB) /JPD421000) /L/PD424400) YL-69 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEM ICO NDUCTO R TECHNICAL DATA MCM94256 256K x 9 Bit Dynamic Random Access Memory Module The M CM94256S is a 2.25M bit, dynamic random access memory DRAM module organized as 262,144 x 9 bits. The module is a 30-lead single-in-line memory m odule (SIMM) consisting of two MCM514256A DRAMs housed in


    OCR Scan     		MCM94256 CM94256S 30-lead MCM514256A 18-lead MCM94256S70 MCM94256S80 MCM94256S10 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E D • TRhMlMS DOlMMhT T6b mSt\GK KMM591000AN DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 591000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		KMM591000AN 591000AN KMM591OOOAN KM44C1OOOAJ 20-pin KM41C1OOOBJ 30-pin 22fiF 130ns PDF

    Untitled

    Abstract: No abstract text available
    Text: KMM591000AN DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 591000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung KM M 591000AN consist of two 4M bit DRAMs KM 44C1000AJ - 1M X 4 in 20-pin SOJ package and


    OCR Scan     		KMM591000AN 591000AN 44C1000AJ 20-pin 41C1000BJ 30-pin 591000AN- 130ns PDF

    TCA 290

    Abstract: 41C1000 km44c1000aj 591000AN
    Text: KMM591000AN DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M M 591 000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung K M M 591000AN consist of two 4M bit DRAMs KM 44C1000AJ - 1M X 4 in 20-pin SOJ package and


    OCR Scan     		KMM591000AN 000AN 591000AN 44C1000AJ 20-pin 41C1000BJ 30-pin 22/iF TCA 290 41C1000 km44c1000aj PDF

    41C1000

    Abstract: KMM591000AN8 max5516 KMM591000AN10 KMM591000AN-8 KMM591000AN-7 41C1000BJ
    Text: KMM591000AN DRAM MODULES 1 MX 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 591000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung KM M 591000AN consist of two 4M bit DRAMs KM 44C1000AJ - 1 M X 4 in 20-pin SOJ package and


    OCR Scan     		KMM591000AN 591000AN 44C1000AJ 20-pin 41C1000BJ 30-pin 22fiF 41C1000 KMM591000AN8 max5516 KMM591000AN10 KMM591000AN-8 KMM591000AN-7 PDF

    TM497EU9

    Abstract: TMS417400DJ simm 30-pin 9-bit 30 pin 9-bit simm memory 30-pin simm memory 30-pin SIMM 30-pin 9-bit ram module SIMM 30-pin
    Text: TM497EU9 4194304-WORD BY 9-BIT DYNAMIC RAM MODULE f ♦ s S M M S 49 9- FEBRUARY 1994 Organization . . . 41943 04 x 9 U SINGLE-IN-LINE PACKAGE TOP VIEW Single 5-V Power Supply (±10% Tolerance) 30-Pin Single-In-Line Memory Module (SIMM) for Use W ith Sockets


    OCR Scan     		TM497EU9 4194304-WORD SMMS499- 30-Pin 16-Megabit 497EU9-60 497EU9-70 497EU9-80 TM497EU9 304-WORD TMS417400DJ simm 30-pin 9-bit 30 pin 9-bit simm memory 30-pin simm memory 30-pin SIMM 30-pin 9-bit ram module SIMM 30-pin PDF

    KM41C1000

    Abstract: KMM591000
    Text: SAMSUNG K M M 4 9 1 0 0 0 /K M M 5 9 1 0 0 0 □ - • - 1M x 9 DRAM SIP and SIMM Memory Modules GENERAL DESCRIPTION FEATURES The Samsung KMM491000 and KMM591000 are 1M x 9 dynamic RAM high density memory mod­ ules. The ninth bit is generally used for parity and


    OCR Scan     		KMM491000 KMM591000 KM41C1000 20-pin R0286 PDF

    TM497EU9

    Abstract: No abstract text available
    Text: TM497EU9 4194304-WORD BY 9-BIT DYNAMIC RAM MODULE SM M S499A- FEBRUARY 1994 - REVISED JUNE 1998 Organization . . . 4194304 x 9 Single 5-V Power Supply ±10% Tolerance 30-Pln Slngle-ln-Llne Memory Module (SIMM) for Use With Sockets Utilizes One 4-Megablt and Two 16-Megabit


    OCR Scan     		TM497EU9 4194304-WORD S499A- 30-Pln 16-Megabit SMMS499A PDF

    cm944

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4M x 9 Bit Dynamic RAM Module MCM94430 The MCM94430 is a 36M dynamic random access memory DRAM module organized as 4,194,304 x 9 bits. The module is a 30-lead single-in-line memory module (SIMM) consisting of two MCM517400B and one MCM54100A DRAMs


    OCR Scan     		MCM94430 30-lead MCM517400B MCM54100A 94430S60 94430S70 94430SG CM94430 cm944 PDF

    Untitled

    Abstract: No abstract text available
    Text: 30-PIN SIMMS STI91000 1M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI91000 is a 1M bit x 9 Dynamic RAM high density memory module. The Simple Technology STI91000 consist of nine CMOS 1M x 1 DRAMs in 20-pin SOJ package


    OCR Scan     		STI91000 STI91000-60 STI91000-70 STI91000-80 110ns 130ns 150ns 30-PIN STI91000 PDF

    KMM59256BN

    Abstract: KMM59256BN7 59256BN KMMS9256BN-8
    Text: KMM59256BN DRAM MODULES 2 5 6 K X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M M 5 9 2 5 6 B N is a 2 6 2 ,1 4 4 bit X 9 Dynamic RAM high density m em ory module. The Sam­ sung K M M 5 9 2 5 6 B N co n sist o f tw o 1M bit DRAMs


    OCR Scan     		KMM59256BN 18-pin 59256BN KMM59256BN KMM59256BN7 KMMS9256BN-8 PDF

    u860

    Abstract: TM497GU8
    Text: TM497GU8 4194304-WORD BY 8-BIT DYNAMIC RAM MODULE SMMS49BA-APRIL 1 9 9 4 - REVISED JUNE 199S • Organization . . . 4194304 x 8 I U SINGLE-IN-LINE PACKAGE • Single 5-V Power Supply ±10% Tolerance • 30-Pln Slngle-ln-Llne Memory Module (SIMM) for Use With Sockets


    OCR Scan     		TM497GU8 4194304-WORD SMMS49BA-APRIL 30-Pln 16-Megabit 497GU8-60 497GU8-70 497GU8-80 u860 PDF

    KM41C1000

    Abstract: 30-pin simm memory KMM591000 30-pin simm memory dynamic IRP 745 km41c SIMM 30-pin KMM491000-10 KMM591000-10 KMM491000-12
    Text: S AM SUN G K M M 4 9 1 0 0 0 /K M M 5 9 1 0 0 0 □ " W Semiconductor 1M x 9 DRAM SIP and SIMM Memory Modules GENERAL DESCRIPTION FEATURES The Samsung KMM491000 and KMM591000 are 1M x 9 dynamic RAM high density memory mod­ ules. The ninth bit is generally used for parity and


    OCR Scan     		KMM491000/KMM591000 KMM491000 KMM591000 KM41C1000 20-pin 22/i/F R0286 30-pin simm memory 30-pin simm memory dynamic IRP 745 km41c SIMM 30-pin KMM491000-10 KMM591000-10 KMM491000-12 PDF

    KMM591000B7

    Abstract: KMM591000B-7 KMM591000B6 KMM591000B
    Text: KMM591000B DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M M 5 9 1 0 0 0 B is a 1 M bit X 9 Dynamic RAM high density m em ory module. The Samsung K M M 5 9 10OOB consist o t nine K M 4 1C 10OOBJ DRAMs


    OCR Scan     		KMM591000B 10OOB 10OOBJ 20-pin 30-pin KMM591OOOB- 591000B- KMM591000B7 KMM591000B-7 KMM591000B6 KMM591000B PDF

    30-pin SIMM RAM

    Abstract: No abstract text available
    Text: STI94000 30-PIN SIMMS 4M X 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI94000 is a 4M bit x 9 Dynamic RAM high density memory module. The Simple Technology STI94000 consist of nine CMOS 4 M x 1 DRAMs in 20-pin SOJ package


    OCR Scan     		STI94000 30-PIN 110ns 130ns 150ns STI94000 20-pin 30-pin SIMM RAM PDF