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    KMM591000B7

    Abstract: KMM591000B-7 KMM591000B6 KMM591000B
    Text: KMM591000B DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M M 5 9 1 0 0 0 B is a 1 M bit X 9 Dynamic RAM high density m em ory module. The Samsung K M M 5 9 10OOB consist o t nine K M 4 1C 10OOBJ DRAMs


    OCR Scan     		PDF KMM591000B 10OOB 10OOBJ 20-pin 30-pin KMM591OOOB- 591000B- KMM591000B7 KMM591000B-7 KMM591000B6 KMM591000B

    7443003

    Abstract: No abstract text available
    Text: CD-R O PERATIN G PLAY TEM P. —25~+70°C O PERATIN G (REC O RD ) TEM P. -5~+55°C '. . IF É ^ r u p ié ' 1 f è ìl~ 2 4 f t Ä Ì T ' X - A - 7 ' f K U > v I B i l ì S J t f t j f c "Super wide range" design assure of writing at all speed (1x to 24x)


    OCR Scan     		PDF 10OOBtffiiU 106KPa 60g/m3 5--30g/m3 30g/m3 7443003

    KM68U1000B

    Abstract: KM68V1000B
    Text: CMOS SRAM KM68V1000B, KM68U1000B Family 128Kx8 bit Low Power & Low Vcc CMOS Static RAM GENERAL DESCRIPTION FEATURE SUMMARY • Process Technology: 0.6 um CMOS • Organization : 128Kx8 • Power Supply Voltage KM68V1000B fa m ily : 3.3V +/- 0.3V KM68U1000B family : 3.0V +/- 0.3V


    OCR Scan     		PDF KM68V1000B, KM68U1000B 128Kx8 128Kx8 KM68V1000B 32-SOP, 32-TSOP

    4HSC

    Abstract: No abstract text available
    Text: 1. Mechanical Dimensions: ~ 0.730 M ax 3. Electrical Specifications: @25°C ISOLATION: - c G.245 TU R N S 1500 Vrm s RATIO: INSERTION LOSS: -1 .0 d B 0 .0 0 4 ^ RETURN LOSS: - 1 B d B E -1 2 d B 0.050 000000000000“ in X • a XFGIA1QOPOL Qa CD -J L -0 .0 3 0


    OCR Scan     		PDF 350uH 100KHz 100mV 0/350mA E151550 102mm) 10OOBA5E-T Mar-29 Mar-29-08 4HSC

    Xfmr

    Abstract: No abstract text available
    Text: 1. Mechanical Dimensions: 3. Electrical Specifications: @25°C ISOLATION: 1500 Vrms 0.730 Max TURNS RATIO: P R I/ S E C 1CT:1CT ±2% D .2 4 Û OCL: 350uH Min 0>100KHz lOOmV BrnADC c Pri DCR: TBD Ohms Max 4 1 1 1» ft 0.Û45 0.025 E 0.050 Sec DCR: TBD Ohms Max


    OCR Scan     		PDF 350uH 100mV MIL-STD-202G, UL04V-O 155-C. E151556 -t-125 102mm) 1000BASE-T Apr-24-08 Xfmr

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY AMDZ1 Am79761 Physical Layer 10-Bit Transceiver for Gigabit Ethernet GigaPHY -SD DISTINCTIVE CHARACTERISTICS • Gigabit Ethernet Transceiver operates at 1.25 Gigabits per second (Gbps) ■ Suitable for both Coaxial and Optical Link applications


    OCR Scan     		PDF Am79761 10-Bit 64-pin

    RJ45 jack dimension

    Abstract: jack j4 Shielded RJ45 Jack SI-50096-F
    Text: THE INFORMATION CONTAINED HEREIN IS CONSIDERED "PROPRIETARY” TO BEL FUSE INC. AND SHALL NOT BE COPIED, REPRODUCED OR DISCLOSED WITHOUT THE WRITTEN APPROVAL OF BEL FUSE INC. / I COMPONENTSfor a CONNECTED PLA N ET^/ DOCUMENT / PART NO.: SI-50096-F TITLE : CMC, 1000BT, TAB UP, SHIELDED


    OCR Scan     		PDF SI-50096-F 1000BT, SI-50096-F FM999183 RJ45 jack dimension jack j4 Shielded RJ45 Jack

    Untitled

    Abstract: No abstract text available
    Text: 1. M echanical D im ensions: 3. E lectrical Specifications: @25°C A 0 .6 0 0 Max - ISOLATION: — — 1500 V rm s c 0 .3 2 0 TURNS RATIO: P R l/S E C 1CT:1 CT ±2% 0CL: 3 5 0 uH MIN @100KHz 100m V 8mADC INSERTION LOSS: 1 ,2dB MAX 1 OOKHz 1,4dB MAX @ 1 -1 Z5MHz


    OCR Scan     		PDF 350uH 100KHz 100mV 1-125MHz -40MHz 100MHz 30-200MHz 10-10GMHz MIL-STD-202G. UL94V-0

    Untitled

    Abstract: No abstract text available
    Text: KM44C1OOOBSL CMOS DRAM 1M x 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C1 OOOBSL is a high speed CMOS 1,048,516 x 4 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		PDF KM44C1OOOBSL KM44C1000BSL-6 KM44C1000BSL-7 KM44C1000BSL-8 110ns 130ns 150ns KM44C1

    ZAB005

    Abstract: ZAB010 ZAB020 ZAB040 ZAB060 ZAB080 ZAB100
    Text: 6 AMPERE AXIAL LEAD RECTIFIERS HIGH SURGE • PRV TO 1000 VOLTS • 6 AMP RATING • 1000 AMP SURGE • HIGH TEMPERATURE STABILITY • HIGH SURGE CAPABILITY • AVALANCHE CHARACTERISTICS PRV 50V 100V 200V 400V 600V 800V 1000V TYPE NO. ZAB005 ZAB010 ZAB020


    OCR Scan     		PDF ZAB005 ZAB010 ZAB020 ZAB040 ZAB060 ZAB080 ZAB100 speci00 1071G 1-BOO-B78-a8Ea ZAB100

    csa 8.00mt cm k

    Abstract: adpcm MSM6388GS-2K
    Text: O KI Semiconductor MSM6388 ADPCM Solid-State Recorder 1C GENERAL DESCRIPTION The MSM6388 is a "solid-state recorder" IC developed using ADPCM Adaptive Differential Pulse Code Modulation technology. When an external microphone such as a speaker driving amplifier,


    OCR Scan     		PDF MSM6388 MSM6388 MSM6388, 12-bit -40dB/oct) MSM6389) 6389JS 6388GS csa 8.00mt cm k adpcm MSM6388GS-2K

    Untitled

    Abstract: No abstract text available
    Text: 1. Mechanical Dimensions: 0 .7 3 0 3. Electrical Specifications: @25°C ISOLATION: M ax T U R N S 1500 Vrms R A T IO : P R l/ S E C 1 C T :1 C T ± 2% c D.24Û OCL: 3 5 0 uH MIN @100KHz 100mV 8mADC ,_ 0 .Û 4 5 0 025 0 .0 0 4 E Prl DCR: 0 .5 6 Ohms Max


    OCR Scan     		PDF 350uH 100KHz 100mV 1MHz-100MHz 155-C. E151556 -t-125 102mm) 10OOBA5E-T Oct-19-07

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC fa7E D • 7^4142 KM44C1OOOBSL DDlSbfi? bSO ■ SMGK CMOS DRAM 1M x 4 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: KM44C1000BSL-6 tRAC tCAC tRC 60ns 15ns 110ns KM44C1000BSL-7 70ns 20ns


    OCR Scan     		PDF KM44C1OOOBSL KM44C1000BSL-6 110ns KM44C1000BSL-7 130ns KM44C1000BSL-8 150ns cycles/256ms 20-LEAD 0Q157G5

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM68V1000B, KM68U1000B Family 128Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process T ec h n o lo g y : 0.6 um C M O S T h e K M 6 8 V 1 0 0 0 B and K M 6 8 U 1 0 0 0 B fam ily are fabricated • O rg a n iz a tio n : 1 2 8 K x 8


    OCR Scan     		PDF KM68V1000B, KM68U1000B 128Kx8 DD23b66

    sk 8060

    Abstract: 8060c 17p107 KT77 CDA MC UM 7107 D17107 17P103 17p104 BR-F SI-F
    Text: M O S m i» lU i& M O S Integrated C ircu it P i 4 t : 7 h - ' » 1 D 7 1 7 , 1 7 1 7 A i <7)\s3- " j - f ' - * 4 0 P 3 > h n - 7 /¿PD17107liROM1 K / W h (512X16t:-y h) , RAM 16X 4 ti' 7 K 1/0*°- h 11 £ t lT ^ - 5 £ -f “ T-f ? □ = !> h P - 7 t ' t o


    OCR Scan     		PDF uPD17107 uPD17107A 512X16t 512X16 sk 8060 8060c 17p107 KT77 CDA MC UM 7107 D17107 17P103 17p104 BR-F SI-F

    gm71c1000b

    Abstract: GM71C1000 GM71C1000BJ
    Text: LG S e m ic o n GM71C1000B/BL C o .,L td . 1,048,576 W ORDS x 1 BIT CMOS DYNAM IC RAM Description Features The G M 71C 100QB/BL is the new generation dynamic RAM organized 1,048,576 x 1 bit. G M 71C 1OOOB/BL has realized higher density, higher performance and various functions by utilizing


    OCR Scan     		PDF GM71C1000B/BL 100QB/BL 1000B/BL gm71c1000b GM71C1000 GM71C1000BJ

    Untitled

    Abstract: No abstract text available
    Text: DENSE-PAC MICROSYSTEMS 64 Megabit FLASH EEPROM DP5Z4MW16Pn3 P R E L IM IN A R Y D E S C R IP T IO N : Th e D P 5 Z 4 M W 1 6 P n 3 " S L C C " devices are a revolutionary new m em ory subsystem using D ense-Pac M icrosystem s' ceram ic Stackable Leadless C h ip


    OCR Scan     		PDF DP5Z4MW16Pn3 50-pin 120ns 150ns 200ns 30A161-24

    Untitled

    Abstract: No abstract text available
    Text: KM616V1000B, KM616U1000B Family CMOS SRAM Document Title 64K x16 bit Low Power and Low Voltage CMOS Static RAM Revision History History Draft Data Remark 0.0 Design target July 24, 1995 Advance 0.1 Initial draft August 12, 1995 Preliminary 1.0 April 13, 1996


    OCR Scan     		PDF KM616V1000B, KM616U1000B 100ns KM616V1000B KM616V1QQGB KM616U1QQQB

    68U1000

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM KM68U1000BLE / LE-L 128Kx8 Bit Low Voltage & Extended Temperature Operating SRAM FEATURES GENERAL DESCRIPTION • Extended Temperature Range : -25 to 85°C • Fast A ccess Time : 70,100ns max. • Low Power Dissipation Standby(CMOS) : 165nW (max.)L-Version


    OCR Scan     		PDF KM68U1000BLE 128Kx8 100ns 165nW 132mW KM68U1000BLGE/BLGE-L: 525mil) KM68U1000BLTE/BLTE-L KM68U1000BLRE/BLRE-L: 10OOBLE/BLE-L 68U1000

    Untitled

    Abstract: No abstract text available
    Text: 3. Electrical Specifications: @25°C 1. Mechanical Dimensions: 0.730 ISOLATION: 1500 Vrms Prf -to Sec Max TURNS RATIO: P R l/S E C 1 CT:1 CT ± 2 % 0CL: 3 5 0 uH MIN @100KHz 100mV 8mADC o Rise Time: 1,75ns Max. 0 .0 4 5 0 .0 2 5 •±=, - it 0 .0 0 4 E


    OCR Scan     		PDF 0DD00DDDD0DD" 350uH 100KHz 100mV 0/35ex: E15155B 102mm' 1000BASE-T 0ct-08-08 0ct-08-0a

    8ca6

    Abstract: No abstract text available
    Text: AMDËI '•Rl UMîNAP Am79761 Gigabit Ethernet PHY Layer Products DISTINCTIVE CHARACTERISTICS • Gigabit Ethernet Transceiver operates at 1.25 Gigabits per second (Gbps) ■ Suitable tor both Coaxial and Optical Link applications ■ 10-bit TTL Interface for Transmit and Receive


    OCR Scan     		PDF Am79761 10-bit 64-pin 10x10 14x14 11CPC-1W 11CPC-1W` 8ca6

    IEEE Standard 803.2

    Abstract: RJ45 connector IEEE 802.3 amp sca-2 IEEE ethernet 803.2
    Text: Catalog 1307515 Issued 9-99 Industry Standards Reference Chart Standard Description Typical AM P Connectors Section IEEE 802.3 10BASE-T http://standards.ieee.org IEEE 802.3 standards for 10Mb/s Ethernet over unshielded twisted pair or 150 Ohm cables 8 position Modular Jacks and Plugs that


    OCR Scan     		PDF 10BASE-T 10BASE-FL 100BASE-TX 10Mb/s 100Mb/s IEEE Standard 803.2 RJ45 connector IEEE 802.3 amp sca-2 IEEE ethernet 803.2

    kvp smd

    Abstract: kvp 42 DIODE kvp 26A M kvp diode 2005C 1.5 khp SMD kvp XMR5 0709a PKF SMD
    Text: AXIAL LEAD DIODES CURRENT P R V VO LTS R E C O V E R Y (nS) SU R G E (A) S E R IE S PAGE 50-1000 50-1000 50-1000 50-1000 2000 to 3000 1000 to 4000 9000 4500 to 6000 7000 to 8000 9000 to 10000 11000 to 12000 1000 to 5000 10000 to 15000 STANDARD STANDARD STANDARD


    OCR Scan     		PDF 600mA 220mA 200mA 175mA 150mA 100mA 500mA kvp smd kvp 42 DIODE kvp 26A M kvp diode 2005C 1.5 khp SMD kvp XMR5 0709a PKF SMD

    Untitled

    Abstract: No abstract text available
    Text: 50ns ULTRA-FAST RECOVERY HIGH-VOLTAGE RECTIFIER DIODES PRV to 5,000 volts 50ns ultra-fast recovery Small size Exceptionally low leakage High surge capability Avalanche chracteristics PRV 3000 4000 5000 EDI type RUSH103 R U S H 104 RUSH105 ELECT R ICAL CH ARACTERISTICS at TA = 25°C, Unless Otherwise Specified


    OCR Scan     		PDF RUSH103 RUSH105 200mA,