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    8X10X1 Search Results

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    8X10X1 Price and Stock

    TDK Corporation HF90T18X10X10

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    DigiKey HF90T18X10X10 Tray 1,325 1
    • 1 $1.67
    • 10 $1.163
    • 100 $0.80713
    • 1000 $0.56968
    • 10000 $0.55538
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    Avnet Americas HF90T18X10X10 Tray 12 Weeks 1,056
    • 1 -
    • 10 -
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    • 1000 -
    • 10000 $0.80574
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    Mouser Electronics HF90T18X10X10 1,477
    • 1 $1.26
    • 10 $0.996
    • 100 $0.571
    • 1000 $0.5
    • 10000 $0.462
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    TDK Corporation HF60T18X10X10

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    DigiKey HF60T18X10X10 Tray 429 1
    • 1 $1.56
    • 10 $1.086
    • 100 $0.75538
    • 1000 $0.5125
    • 10000 $0.5125
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    Avnet Americas HF60T18X10X10 Tray 12 Weeks 600
    • 1 -
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    • 100 -
    • 1000 $0.68641
    • 10000 $0.68641
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    Mouser Electronics HF60T18X10X10 444
    • 1 $1.44
    • 10 $1.07
    • 100 $0.614
    • 1000 $0.512
    • 10000 $0.504
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    TDK Corporation HS52T18X10X10

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    DigiKey HS52T18X10X10 Bulk
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    TDK Corporation HS52T18X10X10E

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    DigiKey HS52T18X10X10E Bulk
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    SPC Multicomp MCT18X10X10C-102NU

    Inductor, 1Mh; Inductance:1Mh; Dc Current Rating:6A; Product Range:-; Case Dimensions:23.5Mm X 16Mm X 25.5Mm Rohs Compliant: Yes |Multicomp Pro MCT18X10X10C-102NU
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark MCT18X10X10C-102NU Bulk 2,201 1
    • 1 $0.688
    • 10 $0.688
    • 100 $0.688
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    Chip Stock MCT18X10X10C-102NU 102
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    Find more 8X10X1 price and stock on Findchips.com

    8X10X1 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    RF3283

    Abstract: DCS1800 GSM900 RF3283PCBA-41X RF3283SB SW-DIP-4 rx2 1150 Log rx2 1150
    Text: RF3283 DUAL-BAND GSM900/DCS1800 TRANSMIT MODULE RoHS Compliant & Pb-Free Product Package Style: Module 8mmx10mm GSM GaAs PA TXIN_LB 22 Features pHEMT Switch „ Package 8x10x1.4mm „ GSM900 POUT 33.3dBm „ DCS1800 POUT 32.0dBm „ „ „ „ „ TX_EN 25 VRAMP 26


    Original     		RF3283 GSM900/DCS1800 8mmx10mm) 8x10x1 GSM900 DCS1800 DS071010 RF3283 RF3283PCBA-41X RF3283SB SW-DIP-4 rx2 1150 Log rx2 1150 PDF

    TXM RX-3

    Abstract: No abstract text available
    Text: RF3283 DUAL-BAND GSM900/DCS1800 TRANSMIT MODULE RoHS Compliant & Pb-Free Product Package Style: Module 8mmx10mm GSM GaAs PA TXIN_LB 22 Features pHEMT Switch ̈ Package 8x10x1.4mm ̈ GSM900 POUT 33.3dBm ̈ DCS1800 POUT 32.0dBm ̈ Integrated Antenna Switch and


    Original     		RF3283 GSM900/DCS1800 8mmx10mm) 8x10x1 GSM900 DCS1800 DS071010 TXM RX-3 PDF

    JS28F256P33

    Abstract: PC28F256P33 PF48F2000P0XBQ0 PC28F128P33B85 JS28F256P33B95 PC28F128P33 RC48F4400P0TB00 RC28F640P33B85 PC28F128P33T85 PC28F640P33B85
    Text: Numonyx StrataFlash Embedded Memory P33 Datasheet Product Features „ „ „ „ High performance: — 85 ns initial access — 52MHz with zero wait states, 17ns clock-todata output synchronous-burst read mode — 25 ns asynchronous-page read mode — 4-, 8-, 16-, and continuous-word burst


    Original     		52MHz 32-KByte 128-KByte 130nm 64-Mbit RD48F2000P0XBQ0 128-Mbit RD48F3000P0XBQ0 256-Mbit RD48F4000P0XBQ0 JS28F256P33 PC28F256P33 PF48F2000P0XBQ0 PC28F128P33B85 JS28F256P33B95 PC28F128P33 RC48F4400P0TB00 RC28F640P33B85 PC28F128P33T85 PC28F640P33B85 PDF

    128W18

    Abstract: 28f128w18t Intel SCSP 28F128W18B 28F640W18T 128W-1 128W18B micron flash otp
    Text: 128-Mbit 1.8 Volt Intel Wireless Flash Memory W18 + 32-Mbit PSRAM Stacked-CSP Family Datasheet Product Features • ■ ■ ■ Flash Architecture — Flexible, Multiple-Partition, DualOperation: Read-While-Write / ReadWhile-Erase — 32 Partitions, 4 Mbits each


    Original     		128-Mbit 32-Mbit --32-Kword 128W18 RD48F3000W0YBQ0 RD48F3000W0YTQ0 128W18 32PSRAM RD38F3040W0YBQ0 RD38F3040W0YTQ0 28f128w18t Intel SCSP 28F128W18B 28F640W18T 128W-1 128W18B micron flash otp PDF

    pc28f128p33b

    Abstract: PC28F128P33 JS28F128P33BF js28f640p33 pc28f128p33bf60 P33-65nm RC28F128P33 JS28F128P33TF70 JS28F128P33 PC28F128P33T
    Text: Numonyx AxcellTM P33-65nm Flash Memory 128-Mbit, 64-Mbit Single Bit per Cell SBC Datasheet Product Features „ „ „ High performance: — 60ns initial access time for Easy BGA — 70ns initial access time for TSOP — 25ns 8-word asynchronous-page read


    Original     		P33-65nm 128-Mbit, 64-Mbit 52MHz 256-word 32-KByte 128-KByte P33-65nm 40Mhz pc28f128p33b PC28F128P33 JS28F128P33BF js28f640p33 pc28f128p33bf60 RC28F128P33 JS28F128P33TF70 JS28F128P33 PC28F128P33T PDF

    pc28f00ap33

    Abstract: JS28F00AP33BF JS28F512P33BF PC28F00BP33EF PC28F00BP33 JS28F512P33EF PC28F512P33 JS28F512P33 PC28F00AP33EF JS28F512
    Text: Numonyx Axcell P33-65nm Flash Memory 512-Mbit , 1-Gbit , 2-Gbit Datasheet Product Features „ High performance: „ TSOP: — 105ns initial access time 512-Mbit, 1-Gbit Easy BGA and TSOP: — Buffered Enhanced Factory Programming at 2.0MByte/s (typ) using 512-word buffer


    Original     		P33-65nm 512-Mbit 512-Mbit, 100ns 16-word 52MHz 105ns 512-word 46MByte/s pc28f00ap33 JS28F00AP33BF JS28F512P33BF PC28F00BP33EF PC28F00BP33 JS28F512P33EF PC28F512P33 JS28F512P33 PC28F00AP33EF JS28F512 PDF

    PF38F2030

    Abstract: 38F1030W0ZTQ0 PF38F2030W0YTQE 64W18 251407 PF38F1030W PF38F 38F1030W0ZBQ0
    Text: Intel Wireless Flash Memory W18/W30 SCSP 32WQ and 64WQ Family with Asynchronous RAM Datasheet Product Features • ■ ■ ■ ■ Device Architecture — Flash Density: 32-Mbit, 64-Mbit — Async PSRAM Density: 8-, 16-, 32-Mbit — Async SRAM Density: 4-, 8-, 16-Mbit


    Original     		W18/W30 32-Mbit, 64-Mbit 32-Mbit 16-Mbit 64W18 64W30 64W30 RD38F2240WWZDQ0 PF38F2030 38F1030W0ZTQ0 PF38F2030W0YTQE 64W18 251407 PF38F1030W PF38F 38F1030W0ZBQ0 PDF

    JS28F256P30

    Abstract: PC28F256P30T85 js28f128p30 RC28F640P30B85 RC48F4400P0VB00 JS28F256P30B95 JS28F256P30T95 JS28F128P30T PC28F128P30B85 JS28F128P30B85
    Text: Intel StrataFlash Embedded Memory P30 Datasheet Product Features „ High performance „ — 85 ns initial access — 52 MHz with zero wait states, 17ns clock-to-data output synchronous-burst read mode — 25 ns asynchronous-page read mode — 4-, 8-, 16-, and continuous-word burst mode


    Original     		32-KByte 128-KByte 512-Mbit 64-Mbit RD48F2000P0ZBQ0 RD48F2000P0ZTQ0 PF48F2000P0ZBQ0 PF48F2000P0ZTQ0 128-Mbit RD48F3000P0ZBQ0 JS28F256P30 PC28F256P30T85 js28f128p30 RC28F640P30B85 RC48F4400P0VB00 JS28F256P30B95 JS28F256P30T95 JS28F128P30T PC28F128P30B85 JS28F128P30B85 PDF

    Untitled

    Abstract: No abstract text available
    Text: Intel StrataFlash Wireless Memory L18 28F640L18, 28F128L18, 28F256L18 Datasheet Product Features • High performance Read-While-Write/Erase — 85 ns initial access — 54 MHz with zero wait state, 14 ns clock-todata output synchronous-burst mode — 25 ns asynchronous-page mode


    Original     		28F640L18, 28F128L18, 28F256L18 128Mb 16-Mbit 256Mb 16-Kword 128-Mbit 256-Mbit PDF

    PF38F4050L0ZTQ0

    Abstract: PF38F3040 numonyx 106 ball RD38F4455 PF48F4400L0 RD38F40 PF38F4050 numonyx 107-ball Numonyx StrataFlash M18
    Text: Numonyx StrataFlash Wireless Memory L18/L30 SCSP 768-Mbit LQ Family with Asynchronous PSRAM/SRAM Datasheet Product Features „ „ „ „ „ „ Device Architecture — Flash die density: 128-, 256-Mbit — Async PSRAM density: 16-, 32-, 64-Mbit — Async SRAM density: 8-Mbit


    Original     		L18/L30 768-Mbit 256-Mbit 64-Mbit 16-Mbit PF38F4050L0ZTQ0 PF38F3040 numonyx 106 ball RD38F4455 PF48F4400L0 RD38F40 PF38F4050 numonyx 107-ball Numonyx StrataFlash M18 PDF

    Untitled

    Abstract: No abstract text available
    Text: Numonyx StrataFlash Cellular Memory M18-90nm/65nm Datasheet Product Features „ „ „ High-Performance Read, Program and Erase — 96 ns initial read access — 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 133 MHz with zero wait-state synchronous


    Original     		M18-90nm/65nm) 512-Mbit 16-bit PDF

    JS28F256P30

    Abstract: JS28F256P30T95 JS28F256P30B95 PC28F256P30T85 JS28F256P30T js48f4400p0vb00 RC48F4400P0VB00 JS28F128P30T85 PC28F256P30B85 PC28F640P30T85
    Text: Numonyx StrataFlash P30 Embedded Memory Datasheet Product Features „ High performance „ — 85 ns initial access — 52 MHz with zero wait states, 17ns clock-to-data output synchronous-burst read mode — 25 ns asynchronous-page read mode — 4-, 8-, 16-, and continuous-word burst mode


    Original     		128-KByte 512-Mbit 64-Mbit 128-Mbit 256-Mbit 512-Mbit* RD48F2000P0ZBQ0 RD48F3000P0ZBQ0 RD48F4000P0ZBQ0 RD48F4400P0VBQ0 JS28F256P30 JS28F256P30T95 JS28F256P30B95 PC28F256P30T85 JS28F256P30T js48f4400p0vb00 RC48F4400P0VB00 JS28F128P30T85 PC28F256P30B85 PC28F640P30T85 PDF

    Stacked 4MB NOR FLASH & SRAM with AD multiplexed

    Abstract: FLASH MEMORY 38F FLASH MEMORY 48F Numonyx admux 48F4400 numonyx 106 ball
    Text: Numonyx Wireless Flash Memory W18 with AD Multiplexed IO Datasheet Product Features „ „ „ High Performance Read-While-Write/Erase — Burst frequency at 66 MHz — 60 ns Initial Access Read Speed — 11 ns Burst-Mode Read Speed — 20 ns Page-Mode Read Speed


    Original     		x32SH x16SB x16/x32 Stacked 4MB NOR FLASH & SRAM with AD multiplexed FLASH MEMORY 38F FLASH MEMORY 48F Numonyx admux 48F4400 numonyx 106 ball PDF

    532WQ

    Abstract: PF38F1030W0YTQ2 38F1030 PF38F1030 PF38F2030W0YTQ1 pf38f1030w0ybq2 Intel SCSP 32WQ 64WQ RD38F2230
    Text: Numonyx Wireless Flash Memory W18/W30 SCSP 32WQ and 64WQ Family with Asynchronous RAM Datasheet Product Features „ „ „ „ „ „ Device Architecture — Flash Density: 32-Mbit, 64-Mbit — Async PSRAM Density: 16-Mbit, 32-Mbit — Top, Bottom or Dual flash parameter


    Original     		W18/W30 32-Mbit, 64-Mbit 16-Mbit, 32-Mbit RD38F2240WWYDQ0 RD38F2240WWYDQ1 532WQ PF38F1030W0YTQ2 38F1030 PF38F1030 PF38F2030W0YTQ1 pf38f1030w0ybq2 Intel SCSP 32WQ 64WQ RD38F2230 PDF

    251903

    Abstract: 290737
    Text: Intel StrataFlash Wireless Memory L30 28F640L30, 28F128L30, 28F256L30 Datasheet Product Features • High performance Read-While-Write/Erase — 85 ns initial access — 52 mHz with zero wait state, 17 ns clock-todata output synchronous-burst mode — 25 ns asynchronous-page mode


    Original     		28F640L30, 28F128L30, 28F256L30 16-Mbit 256-Mb 16-Kword 128-Mbit 256-Mbit RD48F3000L0ZBQ0 NZ48F4000L0ZBQ0 251903 290737 PDF

    PF38F4060

    Abstract: PF38F4060M SCSP M18 PF38F4050 PF38F4060M0y 3076* intel 3098* intel tba 790
    Text: Intel StrataFlash Cellular Memory M18 SCSP 2048-Mbit M18 Family with Synchronous PSRAM Datasheet Product Features „ „ „ „ „ Device Architecture — Flash Die Density: 256, 512 Mbit, or 1 Gbit — PSRAM Die Density: 64 or 128 Mbit — x16 Non-Mux or AD-Mux I/O Interface


    Original     		2048-Mbit 11x13 307654-005US PF38F4060 PF38F4060M SCSP M18 PF38F4050 PF38F4060M0y 3076* intel 3098* intel tba 790 PDF

    Untitled

    Abstract: No abstract text available
    Text: Intel StrataFlash Wireless Memory L18 28F640L18, 28F128L18, 28F256L18 Datasheet Product Features • High performance Read-While-Write/Erase ■ Security — 85 ns initial access — 54 MHz with zero wait state, 14 ns clock-todata output synchronous-burst mode


    Original     		28F640L18, 28F128L18, 28F256L18 64-Mbit 128Mbit 16-Mbit 256-Mbit 16-Kword 8x10x1 PDF

    SCSP M18

    Abstract: PF38F 3098* intel PF38F4050
    Text: Intel StrataFlash Cellular Memory M18 Datasheet Product Features High performance Read, Program and Erase — 93 ns initial access for reads — 512-Mbit device: 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 256-Mbit device: 133 MHz with zero wait-state


    Original     		512-Mbit 256-Mbit 16-bit 107-ball PF38F4050M0Y0C0 PF38F5050M0Y0C0 PF38F5060M0Y0C0 SCSP M18 PF38F 3098* intel PF38F4050 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1.8 Volt Intel StrataFlash Wireless Memory with 3.0-Volt I/O L30 28F640L30, 28F128L30, 28F256L30 Datasheet Product Features • High performance Read-While-Write/Erase — 85 ns initial access — 52MHz with zero wait state, 17 ns clock-to-data output synchronous-burst mode


    Original     		28F640L30, 28F128L30, 28F256L30 52MHz 128Mb 16-Mbit 256Mb 16-KWord 128-Mbit 256-Mbit PDF

    28F128L18

    Abstract: 28F256L18 28F640L18 28F128
    Text: 1.8 Volt Intel StrataFlash Wireless Memory L18 28F640L18, 28F128L18, 28F256L18 Datasheet Product Features • High performance Read-While-Write/Erase — 85 ns initial access — 54MHz with zero wait state, 14 ns clock-to-data output synchronous-burst mode


    Original     		28F640L18, 28F128L18, 28F256L18 54MHz 128Mb 16-Mbit 256Mb 16-KWord 128-Mbit 256-Mbit 28F128L18 28F256L18 28F640L18 28F128 PDF

    PF38F1030W0YTQ2

    Abstract: pf38f1030w0ybq2 FLASH MEMORY 38F 38F1030 PF38F2030W0YTQF W18 88 w18 63 FLASH MEMORY 48F intel flash memory intel flash memory W18
    Text: Intel Wireless Flash Memory W18/W30 SCSP 32WQ and 64WQ Family with Asynchronous RAM Datasheet Product Features • ■ ■ ■ ■ Device Architecture — Flash Density: 32-Mbit, 64-Mbit — Async PSRAM Density: 8-, 16-, 32Mbit; Async SRAM Density: 4-, 8-, 16Mbit


    Original     		W18/W30 32-Mbit, 64-Mbit 32Mbit; 16Mbit RD38F2240WWYDQ0 RD38F2240WWYDQ1 18-Oct-2005 PF38F1030W0YTQ2 pf38f1030w0ybq2 FLASH MEMORY 38F 38F1030 PF38F2030W0YTQF W18 88 w18 63 FLASH MEMORY 48F intel flash memory intel flash memory W18 PDF

    64W18

    Abstract: FLASH MEMORY 38F W18 88 FLASH MEMORY 48F 64WQ 251407 PF38F2030W0YTQE PF38F2030W0YTQ1
    Text: Intel Wireless Flash Memory W18/W30 SCSP 64WQ Family with Asynchronous RAM Datasheet Product Features • ■ ■ ■ ■ Device Architecture — Flash Density: 64-Mbit — Async PSRAM Density: 8-, 16-, 32-Mbit — Async SRAM Density: 4-, 8-, 16-Mbit — Top, Bottom or Dual flash parameter


    Original     		W18/W30 64-Mbit 32-Mbit 16-Mbit RD38F2240WWYDQE 64W30 RD38F2240WWZDQ0 RD38F2240WWYDQ0 RD38F2240WWDQ1 64W18 FLASH MEMORY 38F W18 88 FLASH MEMORY 48F 64WQ 251407 PF38F2030W0YTQE PF38F2030W0YTQ1 PDF

    28F128L30

    Abstract: 28F256L30 28F640L30
    Text: 1.8 Volt Intel StrataFlash Wireless Memory with 3.0-Volt I/O L30 28F640L30, 28F128L30, 28F256L30 Datasheet Product Features • High performance Read-While-Write/Erase — 85 ns initial access — 52MHz with zero wait state, 17 ns clock-to-data output synchronous-burst mode


    Original     		28F640L30, 28F128L30, 28F256L30 52MHz 128Mb 16-Mbit 256Mb 16-KW 128-Mbit 256-Mbit 28F128L30 28F256L30 28F640L30 PDF

    Halbleiterbauelemente DDR

    Abstract: Dioden SY 250 diode sy-250 B250C135 u103d GD244 transistor gc 301 SAM42 diode sy 166 D172C
    Text: electronic Halbleiter-Bauelemente Die vorliegende Übersicht enthält in gedrängter Form die wichtigsten Grenz-und Kenndaten der in der DDR getertigten Halbleiterbauelemente. Die Kennwerte werden im allgemeinen für eine Umgebungs­ temperatur von 25 °C angegeben.


    OCR Scan     		6x10x12 Halbleiterbauelemente DDR Dioden SY 250 diode sy-250 B250C135 u103d GD244 transistor gc 301 SAM42 diode sy 166 D172C PDF