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    8MX18 Search Results

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    8MX18 Price and Stock

    Gates 8MX-180S-21

    Belt Sprocket, Poly Chain GT2 Sprockets,8MM | Gates 8MX-180S-21
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS 8MX-180S-21 Bulk 1
    • 1 $725.16
    • 10 $725.16
    • 100 $725.16
    • 1000 $725.16
    • 10000 $725.16
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    Gates 8MX-180S-62

    Poly Chain GT Sprocket, 8M | Gates 8MX-180S-62
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS 8MX-180S-62 Bulk 3 Weeks 1
    • 1 $1156.94
    • 10 $1156.94
    • 100 $1156.94
    • 1000 $1156.94
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    Gates 8MX-180S-36

    Belt Sprocket, Poly Chain GT2 Sprockets,8MM | Gates 8MX-180S-36
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS 8MX-180S-36 Bulk 1
    • 1 $1029.07
    • 10 $1029.07
    • 100 $1029.07
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    • 10000 $1029.07
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    Gates 8MX-180S-12

    Poly Chain GT Sprocket, 8M | Gates 8MX-180S-12
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS 8MX-180S-12 Bulk 3 Weeks 1
    • 1 $572.99
    • 10 $572.99
    • 100 $572.99
    • 1000 $572.99
    • 10000 $572.99
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    Martin Sprocket & Gear Inc F8MX180S21-SF

    Poly Chain Sprocket, MPC, QD bushed SF, 8MM belt, 21MM belt width, 180 teeth | Martin Sprocket & Gear F8MX180S21-SF
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS F8MX180S21-SF Bulk 6 Weeks 1
    • 1 $753.48
    • 10 $753.48
    • 100 $753.48
    • 1000 $753.48
    • 10000 $753.48
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    8MX18 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TC59SM716FT-75

    Abstract: TC59SM708FT-75 TC59RM716GB THMY6416H1EG-75 TSOP 48 Package nand memory toshiba TH50VSF3681AASB TSOPII-54 16MX72 thmr1e16e THMY6432G1EG-75
    Text: TOSHIBA AMERICA ELECTRONIC COMPONENTS DRAM COMPONENT PRODUCTS SELECTION GUIDE January 2002 Subject to change without notice ORG TYPE PKG SPEED (ns) BANKS ROW/ COL STATUS (2) Des Rec(3) FEATURES DATASHEET TC59RM718MB/RB(1) 8Mx18 Rambus CSP-62 800/711/600 MHz


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    PDF TC59RM718MB/RB 8Mx18 CSP-62 PC800/700/600 TC59RM716MB/RB 8Mx16 TC59RM716GB TC59SM716FT-75 TC59SM708FT-75 TC59RM716GB THMY6416H1EG-75 TSOP 48 Package nand memory toshiba TH50VSF3681AASB TSOPII-54 16MX72 thmr1e16e THMY6432G1EG-75

    da53

    Abstract: DB26
    Text: 1066 MHz RDRAMâ 512/576 Mb 8Mx16/18x4i Advance Information Overview • The 1066 MHz Rambus DRAM (RDRAMâ) is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any


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    PDF 8Mx16/18x4i) DL0117-010 da53 DB26

    Untitled

    Abstract: No abstract text available
    Text: MR18R0824 6/8/C/G BN1 RAMBUS MODULE SERIAL PRESENCE DETECT RIMM SPD Specification based on 144M RDRAM(B-die, 32s banks) Verion 1.1 October 2000 Change History Version 1.1 (Oct. ′00) Based on the Samsung 144M RDRAM (A-die) SPD Specification 1.02 version.


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    PDF MR18R0824 MR18R082C 8Mx18 K4R441869B-NCK8/NCK7/NCG6)

    Untitled

    Abstract: No abstract text available
    Text: KMMR18R84 6/8/C/G AC1 RAMBUS MODULE SERIAL PRESENCE DETECT SPD Specification For 144M RDRAM(2nd Gen.) based RIMM REV. 1.03 February 2000 Revision History Revision 1.0 (June ′99) It is based on the RAMBUS SPD Specification 1.0 version. Revision 1.01 (Oct. ′99)


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    PDF KMMR18R84 300MHz 266MHz 02ver

    Untitled

    Abstract: No abstract text available
    Text: SMH288RFUUD20 October 11, 2001 Revision History • October 11, 2001 Datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel: 510 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com 1 Europe: 5 Kelvin Park South, Kelvin South, East Kilbride, G75 ORH, United Kingdom • Tel: +44-870-870-8747 • Fax: +44-870-870-8757


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    PDF SMH288RFUUD20 288MByte 8Mx18 184-pin 45ns/800MHzEREIN

    MR18R0824

    Abstract: No abstract text available
    Text: MR16R0824 8 BM0 MR18R0824(8)BM0 Preliminary Change History Version 1.0 (October 2000) - Preliminary * First copy. * Based on the 1.1a ver. 128/144Mbit RDRAMs(B-die, 32s banks) base Normal RIMM Datasheet. Page 0 Version 1.0 Oct. 2000 MR16R0824(8)BM0 MR18R0824(8)BM0


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    PDF MR16R0824 MR18R0824 128/144Mbit 8Mx16) 128Mb 16K/32ms 8Mx18) 144Mb

    MR18R0824

    Abstract: No abstract text available
    Text: MR18R0824 6/8/C/G AN1 RAMBUS MODULE SERIAL PRESENCE DETECT RIMM SPD Specification based on 144M RDRAM(A-die, 32s banks) Verion 1.1 October 2000 Change History Version 1.1 (Oct. ′00) Based on the Samsung 144M RDRAM (A-die) SPD Specification 1.02 version.


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    PDF MR18R0824 MR18R082C 8Mx18 K4R441869A-NCK8/NCK7/NCG6)

    MR18R0828AN1-CK8

    Abstract: ck7 marking code MR18R0824 marking code b35 gan1 marking B44
    Text: MR16R0824 6/8/C/G AN1 MR18R0824(6/8/C/G)AN1 Change History Version 1.0 (August 1999) - Preliminary * First copy. * Based on the Rambus RIMM Datasheet Rev.1.0. Version 1.01 (October 1999) Page No. Change Description 1 - Delete the part numbers of low power.


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    PDF MR16R0824 MR18R0824 127mm. MR18R0828AN1-CK8 ck7 marking code marking code b35 gan1 marking B44

    Untitled

    Abstract: No abstract text available
    Text: MR18R0824 8 BM0 RAMBUS MODULE SERIAL PRESENCE DETECT Mirrored RIMM SPD Specification based on 144M RDRAM(B-die, 32s banks) Version 1.1 October 2000 Change History Version 1.1 (Oct. ′00) Based on the Samsung 144M RDRAM (B-die,32s banks) Normal RIMM SPD Specification 1.1 version.


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    PDF MR18R0824 8Mx18 K4R441869B-MCK8/MCK7/MCG6) 16K/32ms

    MR18R0828BN1-CK8

    Abstract: MR18R0824 A84 marking code
    Text: MR16R0824 6/8/C/G BN1 MR18R0824(6/8/C/G)BN1 Change History Version 1.1 (October 2000) - First copy. - Based on the 1.1 ver. 128/144Mbit RDRAMs(A-die) base RIMM Datasheet. Version 1.1a (October 2000) * Update based on the latest Rambus RIMM Datasheet Page No.


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    PDF MR16R0824 MR18R0824 128/144Mbit -711MHz/-600MHz) -600MHz) 8Mx16) 128Mb 16K/32ms MR18R0828BN1-CK8 A84 marking code

    MR18R0824

    Abstract: No abstract text available
    Text: MR18R0824 6/8/C/G BN1 RAMBUS MODULE SERIAL PRESENCE DETECT RIMM SPD Specification based on 144M RDRAM(B-die, 32s banks) Verion 1.1 October 2000 Change History Version 1.1 (Oct. ′00) Based on the Samsung 144M RDRAM (A-die) SPD Specification 1.02 version.


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    PDF MR18R0824 MR18R082C 8Mx18 K4R441869B-NCK8/NCK7/NCG6)

    Untitled

    Abstract: No abstract text available
    Text: 1066 MHz RDRAM 512/576 Mb 8Mx16/18x4i Advance Information Overview The 1066 MHz RDRAM is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high


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    PDF DL-0117-030

    HP83000

    Abstract: HP8753E Kingston Technology testing of diode SAMSUNG RLC 4Mx1 Hyundai Semiconductor UPD488385FB-C80-45-BF1 UPD488385FB-C80-45BF1 KM418RD8C-RK80
    Text: RDRAM Component Testing Summary As part of Intel’s enabling process, the following test/characterization procedure has been implemented on RDRAM components. A small sample of components 2-5 devices has been characterized on an HP83000 tester with Rebus, a test program written by Rambus. The RLC


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    PDF HP83000 HP8753E Kingston Technology testing of diode SAMSUNG RLC 4Mx1 Hyundai Semiconductor UPD488385FB-C80-45-BF1 UPD488385FB-C80-45BF1 KM418RD8C-RK80

    Untitled

    Abstract: No abstract text available
    Text: SMI144RBSAD01 July 11, 2000 Revision History • July 11, 2000 Datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel: 510 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com Europe: 36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: +44-1908 234030 • Fax: +44-1908-234191


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    PDF SMI144RBSAD01 144MByte 8Mx18 160-pin

    Rambus

    Abstract: No abstract text available
    Text: R e a d y f o r t h e N e w M e m o r y S t a n d a r d Never stop thinking. RDRAM In the last years memory bus frequency has evolved from 33MHz for EDO to the current standard of 100MHz for SDRAMs and up to 133MHz for the latest PC133 specification. However, despite this continuous improvement, memory speed has been outpaced


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    PDF 33MHz 100MHz 133MHz PC133 600MHz 400MHz 800Mb/s 20micron 4Mx18, 8Mx16, Rambus

    Untitled

    Abstract: No abstract text available
    Text: MR18R0824 8 AM0 RAMBUS MODULE SERIAL PRESENCE DETECT Mirrored RIMM SPD Specification based on 144M RDRAM(A-die, 32s banks) Version 1.1 October 2000 Change History Version 1.1 (Oct. ′00) Based on the Samsung 144M RDRAM (A-die) Normal RIMM SPD Specification 1.02 version.


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    PDF MR18R0824 8Mx18 K4R441869A-MCK8/MCK7/MCG6) 16K/32ms

    DD 128

    Abstract: MR18R0824
    Text: MR16R0824 8 AM0 MR18R0824(8)AM0 Preliminary Change History Version 1.0 (October 2000) - Preliminary * First copy. * Based on the 1.1ver. 128/144Mbit RDRAMs(A-die, 32s banks) base Normal RIMM Datasheet. Page 0 Version 1.0 Oct. 2000 MR16R0824(8)AM0 MR18R0824(8)AM0


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    PDF MR16R0824 MR18R0824 128/144Mbit 8Mx16) 128Mb 16K/32ms 8Mx18) 144Mb DD 128

    SGRAM

    Abstract: 4MX16
    Text: ‘H Y U N D A I SGRAM / Direct RDRAM / SyncLink DRAM ORDERING INFORMATION • 16Mbit SGRAM Organization Part Number Speed MHz Features Package 16M bit (512Kx32) HY58163210TQ 143/125/100 2Bank, 2K, 3.3V 100pin QFP Part Number SpeedjMbps) Features R&isage


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    PDF 16Mbit 512Kx32) HY58163210TQ 100pin 64/72Mbit 4Mx16) 4Mx18) HYRDU64164M HYRDU72184M 16Bank, SGRAM 4MX16

    4MX16

    Abstract: HYslu
    Text: »«YUN D H I > •« TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUICK REFERENCE GUIDE Direct RDRAM/SyncLink DRAM Part Numbering 3. SGRAM/Direct RDRAM/ SyncLink DRAM DATA SHEETS 16Mbit SGRAM Organization Features Part Number Page 16Mbit (512Kx32 bit


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    PDF 16Mbit 16Mbit 512Kx32 HY58163210TQ 64/72Mbit 4Mx16) 4Mx18) 16Bank, HYRDU64164M 4MX16 HYslu

    HYC532100

    Abstract: 4MX16 2MX32 8MX16 DRAM 1M X 8
    Text: TABLE OF CONTENTS 1. INDEX Table of Contents. 2. FLASH CARD DATA SHEET FLASH M EM ORY CARD ORDERING INFORMATION HYCFL001 HYCFL002 HYCFLF16004 HYCFLF16008 1MB 2MB 4MB 8 MB . 3 512Kx8based .5


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    PDF HYCFL001 HYCFL002 HYCFLF16004 HYCFLF16008 512Kx8based HYC532100 HYC532200 HYC532410 HYC536410 2Mx32/4Mx16 4MX16 2MX32 8MX16 DRAM 1M X 8

    KMCJ532512

    Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
    Text: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7


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    PDF KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 KM41C4000C-5 KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KMCJ532512 KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL

    jeida 88 pin memory card

    Abstract: jeida dram 88 pin dram card 60 pin jeida sram 2Mbyte dram 88 pin KMCJ616256 8Mx18 sram 4MX16 2MX32
    Text: FUNCTION GUIDE 1. PRODUCT GUIDE 1.1 DRAM Card Card Style Vcc Density JEIDA/JEDEC 5.0V 2MByte 4M Byte 8M Byte 1.2 PK G Features • Fast Page Mode KMCJ532512 512Kx32/1Mx16 60/70/80 88 Pin Two Piece KMCJ536512 512Kx36/1Mx18 60/70/80 88 Pin Two Piece Operation


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    PDF KMCJ532512 KMCJ536512 512Kx32/1Mx16 512Kx36/1Mx18 1Mx32/2Mx16 1Mx36/2Mx18 2Mx32/4Mx16 2Mx36/4Mx18 4Mx32/8Mx16 jeida 88 pin memory card jeida dram 88 pin dram card 60 pin jeida sram 2Mbyte dram 88 pin KMCJ616256 8Mx18 sram 4MX16 2MX32

    jeida dram 88 pin

    Abstract: No abstract text available
    Text: 'HYUNDAI HYC536410 Series 4Mx36 DRAM CARD DESCRIPTION The HYC536410 is the DRAM memory card consisting of eight HY5117400ASLTand four HY5141OOALT built in the metal plate housing. The Hyundai DRAM card is optimized forthe applications such as buffering, main and add-in


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    PDF HYC536410 4Mx36 HY5117400ASLTand HY5141OOALT x36/18 1MC04-01-FEBB5 HYC536410-Series 1MC04-01-FEB95 jeida dram 88 pin