AMIC A49LF040TL
Abstract: A49LF040TL A49LF004 A49LF040 lad1-24
Text: A49LF040 4 Mbit CMOS 3.3Volt-only Low Pin Count Flash Memory Preliminary Document Title 4 Mbit CMOS 3.3 Volt-only Low Pin Count Flash Memory Revision History History Issue Date 0.0 Initial issue February 17, 2004 0.1 Add Pb-Free package type August 20, 2004
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A49LF040
4Mbit039
AMIC A49LF040TL
A49LF040TL
A49LF004
A49LF040
lad1-24
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PDF
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A49LF004
Abstract: A49LF040 A49LF040A A49LF040ATX-33F
Text: A49LF040A Preliminary 4 Mbit CMOS 3.3Volt-only Low Pin Count Flash Memory Document Title 4 Mbit CMOS 3.3 Volt-only Low Pin Count Flash Memory Revision History Rev. No. History Issue Date Remark 0.0 Initial issue March 3, 2006 Preliminary 0.1 Correct the part number from A49LF040A to A49LF040AT on
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A49LF040A
A49LF040A
A49LF040AT
A49LF004
A49LF040
A49LF040ATX-33F
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PDF
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Untitled
Abstract: No abstract text available
Text: 256Mb: x4, x8, x16 DDR2 SDRAM DDR2 SDRAM MT47H64M4 – 16 MEG X 4 X 4 MT47H32M8 – 8 MEG X 8 X 4 MT47H16M16 – 4 MEG X 16 X 4 For the latest data sheet, please refer to the Micron Web site: http://www.micron.com/products/dram/ddr2sdram/ Features • •
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256Mb:
18-compatible)
192-cycle
MT47H64M4
MT47H32M8
MT47H16M16
09005aef80b12a05
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PDF
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CAT28LV256
Abstract: No abstract text available
Text: Preliminary CAT28LV256 Preliminary CAT28LV256 256K-Bit CMOS E2PROM FEATURES • 3.0V to 3.6V Supply ■ CMOS and TTL Compatible I/O ■ Read Access Times: 250/300/350 ns ■ Automatic Page Write Operation: – 1 to 64 Bytes in 10ms – Page Load Timer ■ Low Power CMOS Dissipation:
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CAT28LV256
256K-Bit
300-T
CAT28LV256
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PDF
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CAT28LV64
Abstract: 28LV64 28LV64-25
Text: Preliminary CAT28LV64 Preliminary CAT28LV64 64K-Bit CMOS E2PROM FEATURES • 3.0V to 3.6 V Supply ■ Commercial and Industrial Temperature Ranges ■ Read Access Times: ■ CMOS and TTL Compatible I/O – 250/300/350ns ■ Automatic Page Write Operation:
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CAT28LV64
64K-Bit
250/300/350ns
CAT28LV64
300-T
28LV64
28LV64-25
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PDF
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1N914
Abstract: CAT28HT256
Text: CAT28HT256 Preliminary Preliminary CAT28HT256 Extended Temperature: 170˚C 2 256K-Bit CMOS E PROM FEATURES • Fast Read Access Times: 200/250 ns ■ Automatic Page Write Operation: –1 to 64 Bytes in 10ms –Page Load Timer ■ Low Power CMOS Dissipation:
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CAT28HT256
256K-Bit
CAT28HT256
300-T
1N914
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PDF
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EN29LV040A-70SCP
Abstract: EN29LV040A EN29LV040A-70 555H SST39VF020 SST39VF020-70-4C-WHE
Text: Eon Silicon Solution Inc. Application Note SST Flash SST39VF020 to Eon Flash EN29LV040A This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 Rev. A, Issue Date: 2009/06/26 2005 Eon Silicon Solution Inc. www.ession.com
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SST39VF020
EN29LV040A
SST39VF020
EN29LV040A
EN29LV040A-70SCP
SST39VF020-70-4C-WHE
32-pin
8mmx14mm
EN29LV040A-70SCP
EN29LV040A-70
555H
SST39VF020-70-4C-WHE
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MX29LV040C
Abstract: MX29LV040CT2I-70G MX29LV040CTC-70G MX29LV040CQI-70G MX29LV040CQC-55Q architecture in 4289 MX29LV040 MX29LV040CQI-55Q MX29LV040CTI-70G 555H
Text: MX29LV040C 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY EQUAL SECTOR FLASH MEMORY FEATURES • • • • • • • • • • • • • • • Extended single - supply voltage range 2.7V to 3.6V 524,288 x 8 only Single power supply operation - 3.0V only operation for read, erase and program operation
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MX29LV040C
MX29LV040
55Q/70/90ns
64K-Byte
MX29LV040C
MX29LV040CT2I-70G
MX29LV040CTC-70G
MX29LV040CQI-70G
MX29LV040CQC-55Q
architecture in 4289
MX29LV040CQI-55Q
MX29LV040CTI-70G
555H
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A49LF004
Abstract: No abstract text available
Text: A49LF004 4 Mbit CMOS 3.3Volt-only Firmware Hub Flash Memory Preliminary Document Title 4 Mbit CMOS 3.3 Volt-only Firmware Hub Flash Memory Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Initial issue November 21, 2003 November, 2003, Version 0.0
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A49LF004
64KByte
A49LF004
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PDF
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Untitled
Abstract: No abstract text available
Text: A49LF004 4 Mbit CMOS 3.3Volt-only Firmware Hub Flash Memory Preliminary Document Title 4 Mbit CMOS 3.3 Volt-only Firmware Hub Flash Memory Revision History History Issue Date 0.0 Initial issue November 21, 2003 0.1 Add Pb-Free package type August 20, 2004
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A49LF004
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49FL004
Abstract: a2724 49fl
Text: A49FL004 4 Mbit CMOS 3.3Volt-only Firmware Hub/LPC Flash Memory Document Title 4 Mbit CMOS 3.3 Volt-only Firmware Hub/LPC Flash Memory Revision History Rev. No. History Issue Date 0.0 Initial issue September 23, 2005 Preliminary 1.0 Final version release December 13, 2005
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A49FL004
49FL004
a2724
49fl
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Untitled
Abstract: No abstract text available
Text: 256Mb: x4, x8, x16 DDR2 SDRAM Features DDR2 SDRAM MT47H64M4 – 16 Meg x 4 x 4 banks MT47H32M8 – 8 Meg x 8 x 4 banks MT47H16M16 – 4 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: http://www.micron.com/ddr2 Features • VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V excluding 37V ; -37V VDD = +1.9V ±0.1V, VDDQ = +1.9V ±0.1V
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256Mb:
MT47H64M4
MT47H32M8
MT47H16M16
18-compatible)
09005aef8117c187,
09005aef80b12a05
256MbDDR2
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PDF
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Untitled
Abstract: No abstract text available
Text: 256Mb: x4, x8, x16 DDR2 SDRAM Features DDR2 SDRAM MT47H64M4 – 16 Meg x 4 x 4 banks MT47H32M8 – 8 Meg x 8 x 4 banks MT47H16M16 – 4 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: http://www.micron.com/ddr2 Features • VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V excluding 37V ; -37V VDD = +1.9V ±0.1V, VDDQ = +1.9V ±0.1V
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256Mb:
MT47H64M4
MT47H32M8
MT47H16M16
18-compatible)
09005aef8117c187,
09005aef80b12a05
256MbDDR2
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PDF
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CAT28LV65
Abstract: No abstract text available
Text: Preliminary CAT28LV65 Preliminary CAT28LV65 64K-Bit CMOS E2PROM FEATURES • 3.0V to 3.6V Supply ■ CMOS and TTL Compatible I/O ■ Read Access Times: ■ Automatic Page Write Operation: – 1 to 32 Bytes in 5ms – Page Load Timer – 250/300/350ns ■ Low Power CMOS Dissipation:
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CAT28LV65
64K-Bit
250/300/350ns
CAT28LV6d
300-T
CAT28LV65
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CAT28C65B
Abstract: 1N914 28C65B
Text: CAT28C65B CAT28C65B 64K-Bit CMOS E2PROM FEATURES • Fast Read Access Times: ■ Commercial, Industrial and Automotive Tem- – 120/150/200ns perature Ranges ■ Low Power CMOS Dissipation: ■ Automatic Page Write Operation: – Active: 25 mA Max. – Standby: 100 µA Max.
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CAT28C65B
64K-Bit
120/150/200ns
CAT28C65B
300-T
1N914
28C65B
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EN39LV010
Abstract: EN29LV010 Sector 8mmx14mm
Text: Eon Silicon Solution Inc. Application Note Eon Flash EN29LV010 vs. EN39LV010 This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 2005 Eon Silicon Solution Inc. www.eonssi.com Rev. A, Issue Date: 2009/ 06/11
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EN29LV010
EN39LV010
EN39LV010
EN29LV010
SA/30h)
Sector
8mmx14mm
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a2724
Abstract: 49fl004 A49FL004
Text: A49FL004 4 Mbit CMOS 3.3Volt-only Firmware Hub/LPC Flash Memory Preliminary Document Title 4 Mbit CMOS 3.3 Volt-only Firmware Hub/LPC Flash Memory Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Initial issue September 23, 2005 September, 2005, Version 0.0
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A49FL004
a2724
49fl004
A49FL004
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PDF
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Untitled
Abstract: No abstract text available
Text: 256Mb: x4, x8, x16 DDR2 SDRAM Features DDR2 SDRAM MT47H64M4 – 16 Meg x 4 x 4 banks MT47H32M8 – 8 Meg x 8 x 4 banks MT47H16M16 – 4 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: http://www.micron.com/ddr2 Features • VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V excluding 37V ; -37V VDD = +1.9V ±0.1V, VDDQ = +1.9V ±0.1V
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256Mb:
MT47H64M4
MT47H32M8
MT47H16M16
18-compatible)
09005aef8117c187,
09005aef80b12a05
256MbDDR2
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PDF
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SST39WF160x
Abstract: AM29F SST25VF016B tsop i 12mmx20mm 48-WFBGA SST38VF640x TSOP 28 SPI memory Package flash FLASH CROSS sst39vf040 WFBGA-48 48TSOP
Text: Silicon Storage Technology, Inc. NOR Flash Cross Reference Guide 1.8V, 3V, 5V www.SST.com Comparison Guide Spansion Company Density Spansion SST SST AM29F SST39SF S29AL S29GL SST39VF SST38VF S29AS SST39WF 1 ~ 32 Mb 2 ~ 16 Mb 1 ~ 4 Mb 4 ~ 32 Mb 16 Mb ~ 1Gb
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AM29F
SST39SF
S29AL
S29GL
SST39VF
SST38VF
S29AS
SST39WF
SST39WF160x
AM29F
SST25VF016B
tsop i 12mmx20mm
48-WFBGA
SST38VF640x
TSOP 28 SPI memory Package flash
FLASH CROSS sst39vf040
WFBGA-48
48TSOP
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A49LF004
Abstract: A49LF004TL-33F
Text: A49LF004 4 Mbit CMOS 3.3Volt-only Firmware Hub Flash Memory Document Title 4 Mbit CMOS 3.3 Volt-only Firmware Hub Flash Memory Revision History History Issue Date 0.0 Initial issue November 21, 2003 0.1 Add Pb-Free package type August 20, 2004 0.2 Change Ordering Information
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A49LF004
A49LF004
A49LF004TL-33F
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AMIC A49LF040TL
Abstract: No abstract text available
Text: A49LF040 4 Mbit CMOS 3.3Volt-only Low Pin Count Flash Memory Document Title 4 Mbit CMOS 3.3 Volt-only Low Pin Count Flash Memory Revision History History Issue Date 0.0 Initial issue February 17, 2004 0.1 Add Pb-Free package type August 20, 2004 0.2 Change ordering information
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A49LF040
AMIC A49LF040TL
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PS29FS001
Abstract: SA10 SA11 y127
Text: PROGRAMMABLE SILICON SOLUTIONS 1 Mb 128K x 8 Ultra High-Speed Boot Sector Flash Memory PS29FS001 FEATURES PRODUCT DESCRIPTION • Ultra High-Performance FLASH Memory – 20, 25, 35 & 45 ns Read Access – Eliminates Need for Shadow-RAM The PS29FS001 is a very high-speed, page program,
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PS29FS001
PS29FS001
DS002
SA10
SA11
y127
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84 FBGA outline
Abstract: DDR2 x32 5 pin cmos operational amplifier z X6 BP 109 transistor T6N 700 DDR2 SDRAM Meg x 4 x 9 banks 0-30v power DDR2 SDRAM sstl_18 84 FBGA ccd ck
Text: 256Mb: x4, x8, x16 DDR2 SDRAM Features DDR2 SDRAM MT47H64M4 – 16 Meg x 4 x 4 MT47H32M8 – 8 Meg x 8 x 4 MT47H16M16 – 4 Meg x 16 x 4 For the latest data sheet, please refer to the Micron Web site: http://www.micron.com/ddr2 Features • VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V excluding -37V ; -37V VDD = +1.9V ±0.1V, VDDQ = +1.9V
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256Mb:
MT47H64M4
MT47H32M8
MT47H16M16
18-compatible)
09005aef8117c187,
09005aef80b12a05
256MbDDR2
84 FBGA outline
DDR2 x32
5 pin cmos operational amplifier z X6
BP 109 transistor
T6N 700
DDR2 SDRAM Meg x 4 x 9 banks
0-30v power
DDR2 SDRAM sstl_18
84 FBGA
ccd ck
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PDF
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Untitled
Abstract: No abstract text available
Text: 256Mb: x4, x8, x16 DDR2 SDRAM DDR2 SDRAM MT47H64M4 – 16 MEG x 4 x 4 MT47H32M8 – 8 MEG x 8 x 4 MT47H16M16 – 4 MEG x 16 x 4 For the latest data sheet, please refer to the Micron Web site: http://www.micron.com/ddr2 Features • VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V excluding 37V ; -37V VDD = +1.9V ±0.1V, VDDQ = +1.9V ±0.1V
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256Mb:
18-compatible)
192-cycle
MT47H64M4
MT47H32M8
09005aef8117c187,
09005aef80b12a05
256MbDDR2
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PDF
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