NCC equivalent
Abstract: No abstract text available
Text: TMS29F400T, TMS29F400B 524288 BY 8-BIT/262144 BY 16-BIT FLASH M EMORIES • I • Single Power Supply Supports 5 V ± 10% Read/Write Operation I I • Organization . . . I • Array-Blocking Architecture - One 16K-Byte/One 8K-Word Boot Sector - Two 8K-Byte/4K-Word Parameter Sectors
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TMS29F400T,
TMS29F400B
8-BIT/262144
16-BIT
SMJS843A
44-Pin
48-Pin
8-Blf/262144
NCC equivalent
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PDF
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afq5
Abstract: tea 2030 T5ooo Nippon capacitors
Text: MOTOROLA Order Number: MPC850ABEC/D Rev. 0, 9/1999 Semiconductor Products Sector Advance Information MPC850 Rev. A/B Hardware Specifications This document contains detailed information on power considerations, AC/DC electrical characteristics, and AC timing specifications for revision A and B o f the MPC850.
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MPC850ABEC/D
MPC850
MPC850.
MPC850ABEC/D
afq5
tea 2030
T5ooo
Nippon capacitors
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Untitled
Abstract: No abstract text available
Text: MX25V8005 8M-BIT [x 1] 2.5V CMOS SERIAL FLASH FEATURES GENERAL • Serial Peripheral Interface SPI compatible - Mode 0 and Mode 3 • 8,388,608 x 1 bit structure • 256 Equal Sectors with 4K byte each - Any Sector can be erased individually • 16 Equal Blocks with 64K byte each
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MX25V8005
100mA
50MHz
256-byte
120ms
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123401
Abstract: No abstract text available
Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AVEF29LV065U32SJ08-XX 32MB FLASH SIMM, based on AMD Am29LV065D Uniform Sector Flash Memory DESCRIPTION PIN CONFIGURATIONS AVED Memory Products AVEF29LV065U32SJ08-XX is a Flash Memory SIMM, composed of four 64Mbit CMOS flash memories, each organized as 8M X 8 bits mounted on a substrate
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AVEF29LV065U32SJ08-XX
Am29LV065D
AVEF29LV065U32SJ08-XX
64Mbit
80-pin
120ns
123401
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N25Q256
Abstract: No abstract text available
Text: 512Mb, Multiple I/O Serial Flash Memory Features Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25QAx3G12x0x, N25QAx3GF8x0x, N25QAx3GSFx0x Features • • • • • • • • • • • • • • • • • • Write protection
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512Mb,
N25QAx3G12x0x,
N25QAx3GF8x0x,
N25QAx3GSFx0x
256Mb
09005aef84752721
N25Q256
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AT49BV802A
Abstract: AT49BV802AT AT49BV802AT-70CI at49bv802a-70tu
Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Fifteen 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
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3405E
AT49BV802A
AT49BV802AT
AT49BV802AT-70CI
at49bv802a-70tu
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AT49BV320D
Abstract: AT49BV320DT SA70 AT49BV
Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
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3581D
AT49BV320D
AT49BV320DT
SA70
AT49BV
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48C20
Abstract: SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom
Text: Features • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – One Hundred Twenty-seven 32K Word 64K Bytes Main Sectors with Individual Write Lockout
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3608C
48C20
SA125
AT49BV640DT-70CU
AT49BV640D
AT49BV640DT
AT49BV640D-70CU
SWITCH SA125
278000 eprom
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S 3590A
Abstract: AT49BV163D AT49BV163DT AT49BV163DT-70TU
Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Fast Read Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Thirty-one 32K Word 64K Bytes Sectors with Individual Write Lockout
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ci str 9656
Abstract: DSP56200 1311 srz cir 2262 af digital signal processing roman kuc manual so real time application and product for fir 102 m x1 y1 80386 programmers manual Motorola DSP56200 PT 2262 DATASHEET
Text: Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. DSP56100 16-BIT DIGITAL SIGNAL PROCESSOR FAMILY MANUAL Motorola, Inc. Semiconductor Products Sector DSP Division 6501 William Cannon Drive, West Austin, Texas 78735-8598 For More Information On This Product,
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DSP56100
16-BIT
DSP56100FM/AD
ci str 9656
DSP56200
1311 srz
cir 2262 af
digital signal processing roman kuc manual so
real time application and product for fir
102 m x1 y1
80386 programmers manual
Motorola DSP56200
PT 2262 DATASHEET
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AM29F016D-120
Abstract: AM29F016D-150 AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13
Text: Am29F016D 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.23 µm process technology — Compatible with 0.5 µm Am29F016 and 0.32 µm
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Am29F016D
Am29F016
Am29F016B
AM29F016D-120
AM29F016D-150
AM29F016D-70
AM29F016D-90
SA10
SA11
SA12
SA13
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X25F047
Abstract: No abstract text available
Text: X25F047 4K 512 x 8 Bit SPI SerialFlash with Block LockTM Protection FEATURES DESCRIPTION • 1MHz Clock Rate • SPI Modes 0,0 & 1,1 • 512 x 8 Bits —16 Byte Small Sector Program Mode • Low Power CMOS —<1µA Standby Current —<3mA Active Current during Program
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X25F047
X25F047
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A29L008
Abstract: SA10 SA11 SA12 SA13 SA14 SA15 SA16
Text: A29L008 Series 1M X 8 Bit CMOS 3.0 Volt-only, Preliminary Boot Sector Flash Memory Features n Single power supply operation - Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications n Access times: - 70/90 max. n Current:
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A29L008
KbyteX15
SA10
SA11
SA12
SA13
SA14
SA15
SA16
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T4 1060
Abstract: SST29EE512-70-4I-NHE 32-PIN SST29EE512
Text: 512 Kbit 64K x8 Page-Write EEPROM SST29EE512 SST29EE512512Kb (x8) Page-Write, Small-Sector flash memories Data Sheet FEATURES: • Single Voltage Read and Write Operations – 4.5-5.5V for SST29EE512 • Superior Reliability – Endurance: 100,000 Cycles (typical)
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SST29EE512
SST29EE512512Kb
S71060
S71060-09-000
T4 1060
SST29EE512-70-4I-NHE
32-PIN
SST29EE512
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am29f400bb
Abstract: am29f400bb v am29f400 known good AM29F400B7 am29f400b 20185 AM29F400BT
Text: Am29F400B 4 Megabit 512 K x 8-Bit/256 K x 16-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 volt-only operation for read, erase, and program operations — Minimizes system level requirements
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Am29F400B
8-Bit/256
16-Bit)
Am29F400
am29f400bb
am29f400bb v
am29f400 known good
AM29F400B7
20185
AM29F400BT
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A29L800
Abstract: A29L800V
Text: A29L800 Series 1M X 8 Bit / 512K X 16 Bit CMOS 3.0 Volt-only, Preliminary Boot Sector Flash Memory Features n Single power supply operation - Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications n Access times: - 70/90 max.
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A29L800
KbyteX15
KwordX15
48TFBGA)
A29L800V
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PDF
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amic a290021t-70
Abstract: A290021T-70 A290021TL-70 A29002 A290021 A290021L IN3064
Text: A29002/A290021 Series 256K X 8 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory Features n 5.0V ± 10% for read and write operations n Access times: - 55/70/90/120/150 max. n Current: - 20 mA typical active read current - 30 mA typical program/erase current
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A29002/A290021
amic a290021t-70
A290021T-70
A290021TL-70
A29002
A290021
A290021L
IN3064
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PDF
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MC68B21CP
Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References
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SG379/D
1N965BRL
ZEN15V
1N751AS
1N967BRL
ZEN18V
1N751ASRL
1N968BRL
ZEN20V
MC68B21CP
xcm916x1cth16
transistor marking code 12W SOT-23
sg379
MC68B54P
XC68HC805P18CDW
mc68b50cp
MC2830
NE555N
CHN NE555N
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M15451E
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD29F064115-X 64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT WORD MODE PAGE MODE Description The µPD29F064115-X is a flash memory organized of 67,108,864 bits and 142 sectors. Sectors of this memory can
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PD29F064115-X
64M-BIT
16-BIT
PD29F064115-X
M15451E
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DSP56300
Abstract: MSC8101 SC140
Text: Order Number: AN2073/D Rev. 0, 11/2000 MOTOROLA Semiconductor Products Sector Application Note Contents Differences Between the EOnCE and OnCE Ports 1 External Pins. 2 Barbara Johnson 1.1 1.2 EE Signals Control Register . 3
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AN2073/D
DSP56300
DSP56300FM/AD)
SC140
MSC140CORE/D)
MSC8101
MSC8101RM/D)
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY Am29LV200 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications
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Am29LV200
8-Bit/128
16-Bit)
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ch-1228
Abstract: Car Central lock system VNH3SP30 l9813 st driver regulator automotive HiQUAD-64 temic can bus gateway car central lock HiQuad package VNH2SP30 window winder
Text: Door zone systems Advanced solutions for door zone applications www.st.com/automotive STMicroelectronics – advanced From engine and transmission control through safety and onboard entertainment, electronics and microelectronics are becoming increasingly important in all sectors of the automotive industry.
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BRDOORZONE/0404
ch-1228
Car Central lock system
VNH3SP30
l9813
st driver regulator automotive HiQUAD-64
temic can bus gateway
car central lock
HiQuad package
VNH2SP30
window winder
|
PDF
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lv8011
Abstract: AT49BV8011 AT49BV8011T AT49LV8011 AT49LV8011T
Text: Features • Single Supply for Read and Write: 2.7V to 3.3V BV , 3.0V to 3.3V (LV) • Access Time – 90 ns • Sector Erase Architecture • • • • • • • • • • • Fourteen 32K Word (64K Byte) Sectors with Individual Write Lockout Two 16K Word (32K Byte) Sectors with Individual Write Lockout
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1265E
01/00/xM
lv8011
AT49BV8011
AT49BV8011T
AT49LV8011
AT49LV8011T
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WD1010-05
Abstract: WD1100-21
Text: WESTERN O R P O R A DIGITAL T I O N WD1100-21 C WD1100-21 Buffer Manager Support Device FEATURES 6-BIT AUTO-INCREMENTING ADDRESS BUS 128, 256, 512, OR 1024 BYTES PER SECTOR DETECTOR SELECTS UP TO 4 DISK DRIVES SELECTS UP TO 8 HEADS PER DRIVE PROVIDES A RAM CHIP ENABLE AND READY
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WD1100-21
WD1010-05
WD1010-
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