8A0000H8AFFFFH Search Results

SA6954

Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
Contextual Info: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages „ Single 1.8 volt read, program and erase (1.70 to

C000H-DFFFH

Abstract: 24Blocks FB0000h-FBFFFFh 9F0000h-9FFFFFh C10000h-C1FFFFh FF4000h-FF5FFFh 8a0000h8affffh
Contextual Info: ADVANCED INFORMATION MX29LW128T/B/U/D 128M-BIT [16M x 8 / 8M x 16] SINGLE VOLTAGE 3V ONLY PAGE MODE FLASH MEMORY FEATURES GENERAL • 8M word x 16 Bit /16M Byte x 8 Bit switchable Power Supply Voltage - VCC=2.7V to 3.6V for read, erase and program operation

S29WS256N

Abstract: S71WS512NE0BFWZZ
Contextual Info: S71WS512NE0BFWZZ Stacked Multi-Chip Product MCP Flash Memory and pSRAM CMOS 1.8 Volt, Simultaneous Operation, Burst Mode Flash Memory and Pseudo-Static RAM ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION MCP Features The S71WS512 Series is a product line of stacked Multi-Chip

samsung electronics ba41

Abstract: BA175
Contextual Info: Preliminary FLASH MEMORY K8C56 57 15ET(B)M 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

MX29GL256FLT2I-90Q

Abstract: MX29GL256FHT MX29GL256 MX29GL256FHT2I-90Q MX29GL256F MX29GL256FL MX29GL256FH 29GL256 MX29GL256FLXFI-90Q PM1544
Contextual Info: MX29GL256F MX29GL256F DATASHEET P/N:PM1544 REV. 0.02, OCT. 18, 2010 1 PRELIMINARY MX29GL256F SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations - MX29GL256F H/L: VI/O=VCC=2.7V~3.6V, VI/O voltage must tight with VCC

06SEC

Abstract: BA213 16N10 BA167 BA184 15ET BA244 BA242 K8F5615ETM samsung nor flash
Contextual Info: K8F56 57 15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

SA206

Abstract: MX29GA129E
Contextual Info: MX29GA129E C/F MX29GA257E C/F MX29GA129/257E C/F DATASHEET P/N:PM1503 REV. 0.01, AUG. 10, 2009 1 ADVANCED INFORMATION MX29GA129E C/F MX29GA257E C/F SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations

MX29GL256FHT

Abstract: MX29GL256FH
Contextual Info: MX29GL256F MX29GL256F DATASHEET ADVANCED INFORMATION MX29GL256F SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations - MX29GL256F H/L: VI/O=VCC=2.7V~3.6V, VI/O voltage must tight with VCC

MX29GL256

Abstract: MX29GL256E MX29GL128 mx29gl128eh MX29GL128EL MX29GL128elt2i-90g MX29GL256ELT2I MX29GL256ELT2I-90Q MX29GL128E MX29GL256EHT2I-90Q
Contextual Info: MX29GL256E H/L MX29GL128E H/L MX29GL256E/128E H/L DATASHEET P/N:PM1435 REV. 0.03, MAR. 06, 2009 1 PRELIMINARY MX29GL256E H/L MX29GL128E H/L SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations

Contextual Info: K8C54 55 15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR

BA188

Abstract: BA255 BA242 BA138 BA234 BA205 BA238 BA251 BA188 co BA213
Contextual Info: Rev. 1.0, Nov. 2010 K8S5615ETC 256Mb C-die NOR Flash 44FBGA, Muxed Burst, Multi Bank SLC 16M x16, 1.7V ~ 1.95V datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

BA251

Abstract: 16N10
Contextual Info: K8F56 57 15ET(B)M FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

BA95

Abstract: 8A0000
Contextual Info: K8C56 57 15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR

MX29GL256

Abstract: MX29GL256E MX29GL256EHT2 MX29GL256EHT2I-90Q 29GL256 MX29GL256EHMC MX29GL256EHT2I MX29GL256ELXFI-90Q MX29GL256EHXFI-90Q MX29GL256EHMC-90Q
Contextual Info: MX29GL256E MX29GL256E DATASHEET P/N:PM1499 REV. 1.2, NOV. 22, 2010 1 MX29GL256E SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations - MX29GL256E H/L: VI/O=VCC=2.7V~3.6V, VI/O voltage must tight with VCC

SA247

Contextual Info: MX29GL256F MX29GL256F DATASHEET P/N:PM1544 REV. 0.00, DEC. 10, 2009 1 ADVANCED INFORMATION MX29GL256F SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations - MX29GL256F H/L: VI/O=VCC=2.7V~3.6V, VI/O voltage must tight with VCC

samsung ba92

Contextual Info: Preliminary FLASH MEMORY K8F56 57 15ET(B)M 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

BA239

Contextual Info: Rev. 1.0, Jun. 2010 K8P5616UZB 256Mb B-die Page NOR FLASH 256M Bit 16M x16, 32M x8 , Page Mode datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

29gl128

Abstract: 29GL256 750000H-75FFFFH SA-136 MX29GA256 MX 128 D MX29GA SA154 Q0-Q15 sa229
Contextual Info: MX29GA256/257E H/L MX29GA128/129E H/L MX29GA - E Series DATASHEET P/N:PM1484 REV. 0.02, MAR. 06, 2009 1 PRELIMINARY MX29GA256/257E H/L MX29GA128/129E H/L SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations

Contextual Info: MX29GL256E MX29GL256E DATASHEET The MX29GL256E product family is not recommended for new designs, while MX29GL256F family is suggested to replace it. Please refer to MX29GL256F datasheet for specifications and ordering information, or contact your local sales representative for additional support.

S73WS256N

Abstract: WS128N SA173
Contextual Info: S73WS256N based MCPs Stacked Multi-Chip Product MCP 256 Megabit (32M/16M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with 256/128 Megabit (4M/2M x 16-bit x 4 Banks) Mobile SDRAM on Shared Address/Data Bus ADVANCE Distinctive Characteristics

101110

Abstract: ws256n spansion S29WS064N S29WS128N S29WS256N WS128N 064N
Contextual Info: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages „ Single 1.8 volt read, program and erase (1.70 to

MX29GL256

Contextual Info: MX29GL256F H/L-70SSOP MX29GL256F H/L 70 SSOP DATASHEET P/N:PM1674 REV. 1.2, DEC. 13, 2011 1 MX29GL256F H/L-70SSOP SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations

MX29GL256E

Abstract: MX29GL256E USPB
Contextual Info: MX29GL256E H/L MX29GL256E H/L DATASHEET P/N:PM1499 REV. 1.0, APR. 28, 2009 1 MX29GL256E H/L SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations - V I/O voltage must tight with VCC

mx29ga257

Abstract: MX29GA257EHXCI-90Q MX29GA SEC555 MX29GA128E SA135 MX29GA129E MX29GA256ELXCI-90Q mx29ga257ehxci addr55
Contextual Info: MX29GA256/257E H/L MX29GA128/129E H/L MX29GA - E Series DATASHEET P/N:PM1484 REV. 1.0, AUG. 05, 2011 1 MX29GA256/257E H/L MX29GA128/129E H/L SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations