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10106138-A000001LF		Amphenol Communications Solutions	PwrBlade+® Connector, Power Connectors, 10HDP STB, Vertical, Receptacle.

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Intelligent Memory Limited IMC1B1A8C1A2A1A3A8A0000 EMMC 153 BALL 64GB SILVER -40 +1
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DigiKey	IMC1B1A8C1A2A1A3A8A0000	Tray	10		1	1 $30.29 10 $26.893 100 $26.893 1000 $26.893 10000 $26.893	Buy Now
OMRON Industrial Automation 3-3438A-00-0001-F200 UMAC ACC-51E 4-AXIS 4096X
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DigiKey	3-3438A-00-0001-F200	Bulk	2		1	1 $3171.23 10 $3171.23 100 $3171.23 1000 $3171.23 10000 $3171.23	Buy Now
Master Electronics	3-3438A-00-0001-F200					1 $2702.73 10 $2523.9 100 $2523.9 1000 $2523.9 10000 $2523.9	Buy Now
Anytek Technology Corporation Ltd TS05518A0000G TERM BLOCK PLUG 5POS 5.08MM
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DigiKey	TS05518A0000G	Bulk			3,080	1 - 10 - 100 - 1000 - 10000 $0.77125	Buy Now
RS	TS05518A0000G	Bulk			3,080	1 - 10 - 100 - 1000 - 10000 $0.96	Get Quote
TME	TS05518A0000G				3,080	1 - 10 - 100 - 1000 - 10000 $0.92	Get Quote
Interstate Connecting Components	TS05518A0000G					1 - 10 - 100 - 1000 - 10000 -	Buy Now
Anytek Technology Corporation Ltd TS09718A0000G TERM BLOCK PLUG 9POS 90DEG 5MM
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DigiKey	TS09718A0000G	Bulk			3,010	1 - 10 - 100 - 1000 - 10000 $1.3651	Buy Now
TME	TS09718A0000G				3,010	1 - 10 - 100 - 1000 - 10000 $1.67	Get Quote
Interstate Connecting Components	TS09718A0000G					1 - 10 - 100 - 1000 - 10000 -	Buy Now
Anytek Technology Corporation Ltd TS21518A0000G TERM BLOCK PLUG 21POS 5.08MM
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DigiKey	TS21518A0000G	Bulk			3,000	1 - 10 - 100 - 1000 - 10000 $3.1275	Buy Now
RS	TS21518A0000G	Bulk			3,000	1 - 10 - 100 - 1000 - 10000 $4.03	Get Quote
TME	TS21518A0000G				3,000	1 - 10 - 100 - 1000 - 10000 $3.89	Get Quote
Interstate Connecting Components	TS21518A0000G					1 - 10 - 100 - 1000 - 10000 -	Buy Now

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8A0000 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
SA6954 Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00 Text: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages Single 1.8 volt read, program and erase (1.70 to	Original	S29WSxxxN S29WS256N, S29WS128N, S29WS064N 16-Bit) SA6954 S29WS064N S29WS128N S29WS256N WS128N FFC00	PDF
HDMP 1034 AG Abstract: HDMP-1032 AMCC DATE CODE MARKING AMCC 460, DATE CODE 4X511 sg ag20 AF2-2 hdmp 1032 1034 marking M29 TRANSISTOR AH-16 Text: Released Datasheet PMC-Sierra, Inc. Long Form Data Sheet PMC-980618 Issue 3 PM73487 QRT 622 Mbps ATM Traffic Management Device PM73487 QRT 622 Mbps ATM Traffic Management Device DATASHEET Released Issue 3: JUN 1999 Released Datasheet PMC-Sierra, Inc. PMC-980618	Original	PMC-980618 PM73487 PM73487 PMC-981001 HDMP 1034 AG HDMP-1032 AMCC DATE CODE MARKING AMCC 460, DATE CODE 4X511 sg ag20 AF2-2 hdmp 1032 1034 marking M29 TRANSISTOR AH-16	PDF
C000H-DFFFH Abstract: 24Blocks FB0000h-FBFFFFh 9F0000h-9FFFFFh C10000h-C1FFFFh FF4000h-FF5FFFh 8a0000h8affffh Text: ADVANCED INFORMATION MX29LW128T/B/U/D 128M-BIT [16M x 8 / 8M x 16] SINGLE VOLTAGE 3V ONLY PAGE MODE FLASH MEMORY FEATURES GENERAL • 8M word x 16 Bit /16M Byte x 8 Bit switchable Power Supply Voltage - VCC=2.7V to 3.6V for read, erase and program operation	Original	MX29LW128T/B/U/D 128M-BIT JAN/27/2003 MAR/28/2003 MAY/16/2003 MAY/29/2003 C000H-DFFFH 24Blocks FB0000h-FBFFFFh 9F0000h-9FFFFFh C10000h-C1FFFFh FF4000h-FF5FFFh 8a0000h8affffh	PDF
lt 7216 Abstract: SH7060 h9700 H8108 bt 58a hitachi marking format IC 7217 Unit COUNTER IC TAD 8361 T3.15A 250V TAD 8361 Text: Hitachi Microcomputer Development Environment System SH7060 E8000 Emulator HS7060EDD81H User’s Manual ADE-702-217 Rev. 1.0 08/03/00 Hitachi, Ltd. HS7060EDD81HE A Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,	Original	SH7060 E8000 HS7060EDD81H ADE-702-217 HS7060EDD81HE K28863 lt 7216 h9700 H8108 bt 58a hitachi marking format IC 7217 Unit COUNTER IC TAD 8361 T3.15A 250V TAD 8361	PDF
A81DC Abstract: a21dc a51dc SG 2368 FE8800 ED8000 E78000 FA6400 0110FFFF e7040 Text: MOTOROLA Order at ANE408/0 SEMICONDUCTOR APPLICATION NOTE ANE408 Previously ANE008 Logarithmic/Linear Conversion Routines for DSP56000/1 Prepared by: Eric Cheval Motorola G eneva, Switzerland I. INTRODUCTION DSP chips are often connected to mono-circuits (cofidecs) in telecommunication applications. When programmed *Cs multichannel DTMF	OCR Scan	ANE408/D DSP56000/1 ANE408 ANE008) DSP56000/1 300-3400hz A81DC a21dc a51dc SG 2368 FE8800 ED8000 E78000 FA6400 0110FFFF e7040	PDF
JESD97 Abstract: M29DW128F TSOP56 6C80 Text: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Feature summary • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read	Original	M29DW128F TSOP56 32-Word 16Mbit 48Mbit 16Mbit TBGA64 JESD97 M29DW128F TSOP56 6C80	PDF
SA452 Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871 Text: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this	Original	Am29LV2562M S29GL512N S29GL512N SA452 SA336 SA424 120R SA487 EE8000 a78000a7ffff c58000c5ffff SA4871	PDF
S29WS256N Abstract: S71WS512NE0BFWZZ Text: S71WS512NE0BFWZZ Stacked Multi-Chip Product MCP Flash Memory and pSRAM CMOS 1.8 Volt, Simultaneous Operation, Burst Mode Flash Memory and Pseudo-Static RAM ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION MCP Features The S71WS512 Series is a product line of stacked Multi-Chip	Original	S71WS512NE0BFWZZ S71WS512 S29WS256N 54MHz 128Mb 96-ball S71WS512NE0BFWZZ S29WS256N	PDF
M29W128FL Abstract: Memory Protection Devices M29W128FH JESD97 M29W128F TSOP56 Text: M29W128FH M29W128FL 128 Mbit 8Mb x 16 or 16Mb x 8, Page, Uniform Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7 to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read	Original	M29W128FH M29W128FL Words/16 TSOP56 32-Word 64-Bytes) M29W128FL Memory Protection Devices M29W128FH JESD97 M29W128F TSOP56	PDF
FL128P Abstract: SPANSION FL128P Text: S25FL128P 128 Megabit CMOS 3.0 Volt Flash Memory with 104-MHz SPI Serial Peripheral Interface Bus Data Sheet S25FL128P Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information,	Original	S25FL128P 104-MHz S25FL128P FL128P SPANSION FL128P	PDF
samsung electronics ba41 Abstract: BA175 Text: Preliminary FLASH MEMORY K8C56 57 15ET(B)M 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,	Original	K8C56 256Mb A0-A23 000000FH 000001FH 000002FH 0000000H samsung electronics ba41 BA175	PDF
BA379 Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324 Text: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz	Original	K8A5615ET 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns--- BA379 BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324	PDF
NS064N Abstract: S29NS128N S29NS256N VDC048 S29NS256 Text: S29NSxxxN MirrorBitTM Flash Family S29NS256N, S29NS128N, S29NS064N 256/128/64 Megabit 16/8/4M x 16-bit , CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory ADVANCE INFORMATION Distinctive Characteristics Single 1.8 volt read, program and erase (1.70	Original	S29NSxxxN S29NS256N, S29NS128N, S29NS064N 16/8/4M 16-bit) 32-Word S29NS256/128/64N NS064N S29NS128N S29NS256N VDC048 S29NS256	PDF
JESD97 Abstract: M29DW128F TSOP56 esn 234 D2578 5PWA Text: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional)	Original	M29DW128F TSOP56 32-Word TBGA64 16Mbit 48Mbit 16Mbit JESD97 M29DW128F TSOP56 esn 234 D2578 5PWA	PDF

MX29GL256FLT2I-90Q Abstract: MX29GL256FHT MX29GL256 MX29GL256FHT2I-90Q MX29GL256F MX29GL256FL MX29GL256FH 29GL256 MX29GL256FLXFI-90Q PM1544 Text: MX29GL256F MX29GL256F DATASHEET P/N:PM1544 REV. 0.02, OCT. 18, 2010 1 PRELIMINARY MX29GL256F SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations - MX29GL256F H/L: VI/O=VCC=2.7V~3.6V, VI/O voltage must tight with VCC	Original	MX29GL256F PM1544 MX29GL256F 64KW/128KB 16-byte/8-word 64-byte/32-word 128-word 100mA MX29GL256FLT2I-90Q MX29GL256FHT MX29GL256 MX29GL256FHT2I-90Q MX29GL256FL MX29GL256FH 29GL256 MX29GL256FLXFI-90Q PM1544	PDF
S25FL129 Abstract: S25FL129P s25fl129p0 FL129P footprint WSON S25FL128P SA255 SCK FAB024 footprint WSON-8 reader sa223 FAC024 Text: S25FL129P 128-Mbit CMOS 3.0 Volt Flash Memory with 104-MHz SPI Serial Peripheral Interface Multi I/O Bus Data Sheet S25FL129P Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information,	Original	S25FL129P 128-Mbit 104-MHz S25FL129P S25FL129 s25fl129p0 FL129P footprint WSON S25FL128P SA255 SCK FAB024 footprint WSON-8 reader sa223 FAC024	PDF
asme SA388 Abstract: gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63 Text: S29GL-M MirrorBitTM フラッシュファミリ S29GL256M，S29GL128M，S29GL064M，S29GL032M 256M ビット，128M ビット，64M ビット，および 32M ビット， 3.0V 単一電源，ページモードフラッシュメモリ 0.23µm MirrorBit プロセステクノロジ	Original	S29GL-M S29GL256MS29GL128MS29GL064MS29GL032M S29GL128MS29GL128N S29GL256MS29GL256N S29GLxxxN 00-B-5 S29GL032M LAA064 asme SA388 gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63	PDF
120R Abstract: C8800 Text: Am29LV2562M Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and	Original	Am29LV2562M 120R C8800	PDF
DQ141 Abstract: No abstract text available Text: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V Supply, Flash Memory PRELIMINARY DATA Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional)	Original	M29DW128F 32-Word 16Mbit 48Mbit 16Mbit DQ141	PDF
l256mh113 Abstract: L256ML123R Text: Am29LV256M Data Sheet September 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and	Original	Am29LV256M l256mh113 L256ML123R	PDF
06SEC Abstract: BA213 16N10 BA167 BA184 15ET BA244 BA242 K8F5615ETM samsung nor flash Text: K8F56 57 15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,	Original	K8F56 256Mb 070000h-07FFFFh 060000h-06FFFFh 050000h-05FFFFh 040000h-04FFFFh 030000h-03FFFFh 020000h-02FFFFh 010000h-01FFFFh 00C000h-00FFFFh 06SEC BA213 16N10 BA167 BA184 15ET BA244 BA242 K8F5615ETM samsung nor flash	PDF
Untitled Abstract: No abstract text available Text: Am29LV128MH/L Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and	Original	Am29LV128MH/L	PDF
Untitled Abstract: No abstract text available Text: S25FL128R 128 Megabit CMOS 3.0 Volt Flash Memory with 104-MHz SPI Serial Peripheral Interface Bus Data Sheet (Advance Information) S25FL128R Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information,	Original	S25FL128R 104-MHz S25FL128R	PDF
L256MH113R Abstract: L256ML113R Text: Am29LV256M Data Sheet -XO\ 7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG	Original	Am29LV256M L256MH113R L256ML113R	PDF

8A0000 Search Results

8A0000 Result Highlights (1)

8A0000 Price and Stock

Intelligent Memory Limited IMC1B1A8C1A2A1A3A8A0000

OMRON Industrial Automation 3-3438A-00-0001-F200

Anytek Technology Corporation Ltd TS05518A0000G

Anytek Technology Corporation Ltd TS09718A0000G

Anytek Technology Corporation Ltd TS21518A0000G

8A0000 Datasheets Context Search

SA6954

HDMP 1034 AG

C000H-DFFFH

lt 7216

A81DC

JESD97

SA452

S29WS256N

M29W128FL

FL128P

samsung electronics ba41

BA379

NS064N

JESD97

MX29GL256FLT2I-90Q

S25FL129

asme SA388

120R

DQ141

l256mh113

06SEC

Untitled

Untitled

L256MH113R