839 TRANSISTOR Search Results

AN-839

Abstract: DS3883A DS3884A DS3885 DS3886A
Contextual Info: National Semiconductor Application Note 839 Joel Martinez, Stephen Kempainen July 1992 INTRODUCTION Futurebus+ systems designed today have bus widths of 32 or 64. To support higher bandwidths in the future, Futurebus+ provides a data width extension of up to 256 bits. BTL

case transistor 79A

Abstract: tel 839 b AN-839 C1996 DS3883A DS3884A DS3885 DS3886A
Contextual Info: National Semiconductor Application Note 839 Joel Martinez Stephen Kempainen July 1992 INTRODUCTION Futurebus a systems designed today have bus widths of 32 or 64 To support higher bandwidths in the future Futurebus a provides a data width extension of up to 256 bits BTL

Contextual Info: BD840 BD842 BD844 SILICON PLANAR EPITAXIAL POWER TRANSISTORS P N-P silicon transistors, in a plastic T 0 -2 0 2 package, recom m ended fo r use in television circuits and audio applications. N-P-N com plem ents are BD 839, BD841 and BD843. QUICK REFERENCE DATA

AN-839

Abstract: DS3883A DS3884A DS3885 DS3886A
Contextual Info: National Semiconductor Application Note 839 Joel Martinez, Stephen Kempainen July 1992 INTRODUCTION Futurebus+ systems designed today have bus widths of 32 or 64. To support higher bandwidths in the future, Futurebus+ provides a data width extension of up to 256 bits. BTL

AN-839

Abstract: DS3883A DS3884A DS3885 DS3886A
Contextual Info: National Semiconductor Application Note 839 Joel Martinez, Stephen Kempainen July 1992 INTRODUCTION Futurebus+ systems designed today have bus widths of 32 or 64. To support higher bandwidths in the future, Futurebus+ provides a data width extension of up to 256 bits. BTL

2SA939

Abstract: 2SA939 B 2SA839 HI-FI AMP 200X2mm 2SA839-0 sfik
Contextual Info: 2 s a 839 " ^ v i i y p N ^ P = m m * y & ^ y y z 5> SILICON PNP TR IP LE DIFFUSED MESA TRANSISTOR o ismmntimmm o mmmnttmmm o Audio Power Amplifier Applications o Driver Stage Amplifier Applications • S if f l E T -i - : • asm* v CE0 = - 150 V Hi-Fi 2 S C 1 6 69 k

d844

Abstract: Transistors BD 330
Contextual Info: ^[ _ PHILIPS INTERNATIONAL BD840 BD842 BD844 SbE D • 7110fl2b 00M303L. 34T « P H I N T-33-l T SILICON PLANAR EPITAXIAL POWER TRANSISTORS P-N-P silicon transistors, in a plastic T 0-2 0 2 envelope, recommended for use in television circuits and

HT 1000-4 power amplifier

Abstract: triac tag 8739 H48 zener diode TRIAC TAG 8812 Zener diode H48 h48 diode zener loctite 5145 RF MODULE CIRCUIT DIAGRAM z 10 cd harris transistor f6 13003 OM370
Contextual Info: TECHNICAL MANUAL SigmaPLUS IOT Transmitters I Introduction II Installation & Checkout III Operation IV Theory of Operation V Maintenance & Alignments VI Troubleshooting VII Parts List VIII Subsections T.M. No. 888-2430-001 Copyright HARRIS CORPORATION

Contextual Info: Silicon Photo Transistor OPB0462 1. Structure 1.1 Chip Size : 0.46mm X 0.46mm 1.2 Chip thickness : 180 15um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 135um - Base : 70um X 70um 2. Guaranteed Probed Electrical Characteristics

OPB1104

Contextual Info: Silicon Photo Transistor OPB1104 1. Structure 1.1 Chip Size : 0.42mm X 1.17mm 1.2 Chip thickness : 280±20um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 130um - Base : 60um X 60um 1.6 Active Area : 0.31mm X 0.46mm

OPB0462

Contextual Info: Silicon Photo Transistor OPB0462 1. Structure 1.1 Chip Size : 0.46mm X 0.46mm 1.2 Chip thickness : 180±15um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 135um - Base : 70um X 70um Ta=25℃

OPB0422

Abstract: 839 transistor transistor 835
Contextual Info: Silicon Photo Transistor OPB0422 1. Structure 1.1 Chip Size : 0.415mm X 0.415mm 1.2 Chip thickness : 180±15um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 138um X 138um - Base : 70um X 70um Ta=25℃

Contextual Info: Silicon Photo Transistor OPB0422 1. Structure 1.1 Chip Size : 0.415mm X 0.415mm 1.2 Chip thickness : 180 15um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 138um X 138um - Base : 70um X 70um 2. Guaranteed Probed Electrical Characteristics

835 CB

Abstract: OPB0808 transistor 835
Contextual Info: Silicon Photo Transistor OPB0808 1. Structure 1.1 Chip Size : 0.80mm X 0.80mm 1.2 Chip thickness : 280±20um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 140um - Base : 100um X 100um 1.6 Active Area : 0.64mm X 0.64mm

Contextual Info: Silicon Photo Transistor OPB1104 1. Structure 1.1 Chip Size : 0.42mm X 1.17mm 1.2 Chip thickness : 280 20um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 130um - Base : 60um X 60um 1.6 Active Area : 0.31mm X 0.46mm

Contextual Info: Silicon Photo Transistor OPB0606 1. Structure 1.1 Chip Size : 0.61mm X 0.61mm 1.2 Chip thickness : 280 20um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 155um X 155um - Base : 90um X 90um 2. Guaranteed Probed Electrical Characteristics

OPB0505P

Contextual Info: Silicon Photo Transistor OPB0505P 1. Structure 1.1 Chip Size : 0.50mm X 0.50mm 1.2 Chip thickness : 180±20um 1.3 Metallization : Top - Al, Bottom - Cr-Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 120 X 120um - Base : 60um X 60um 2. Electrical Characteristics

ic 8259

Abstract: OPB0642 opb064
Contextual Info: Silicon Photo Transistor OPB0642 1. Structure 1.1 Chip Size : 0.62mm X 0.42mm 1.2 Chip thickness : 220±30um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 160um : Emitter Electrode : Base Electrode

Contextual Info: Silicon Photo Transistor OPB0505P 1. Structure 1.1 Chip Size : 0.50mm X 0.50mm 1.2 Chip thickness : 180 20um 1.3 Metallization : Top - Al, Bottom - Cr-Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 120 X 120um - Base : 60um X 60um 2. Electrical Characteristics

Contextual Info: Silicon Photo Transistor OPB0642 1. Structure 1.1 Chip Size : 0.62mm X 0.42mm 1.2 Chip thickness : 220 30um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 160um : Emitter Electrode : Base Electrode

Contextual Info: Silicon Photo Transistor OPB0808 1. Structure 1.1 Chip Size : 0.80mm X 0.80mm 1.2 Chip thickness : 280 20um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 140um - Base : 100um X 100um 1.6 Active Area : 0.64mm X 0.64mm

839 transistor

Contextual Info: Silicon Photo Transistor OPB1204 1. Structure 1.1 Chip Size : 1.2mm X 0.45mm 1.2 Chip thickness : 230±20um 1.3 Metallization : Top - Al 2um , Bottom - Au 1.4 Back Metal : Au(1,000Å) 1.5 Passivation : Silicon Nitride 1.6 Bonding Pad Size : Emitter Electrode

OPB0604

Abstract: 839 transistor
Contextual Info: Silicon Photo Transistor OPB0604 1. Structure 1.1 Chip Size : 0.60mm X 0.45mm 1.2 Chip thickness : 220±30um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 130um : Emitter Electrode : Base Electrode

2SC326

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC3264 Features • NPN Silicon Transistors With MT-200 package Maximum Ratings Symbol Rating Rating Unit VCEO Collector-Emitter Voltage