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    2SC326 Search Results

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    2SC326 Price and Stock

    Toshiba America Electronic Components 2SC3265-Y,LF

    TRANS NPN 25V 0.8A TO236
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    DigiKey 2SC3265-Y,LF Cut Tape 2,342 1
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    2SC3265-Y,LF Digi-Reel 2,342 1
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    2SC3265-Y,LF Reel 3,000
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    Mouser Electronics 2SC3265-Y,LF 9,060
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    Sanken Electric Co Ltd 2SC3263

    TRANS NPN 230V 15A TO3P
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    DigiKey 2SC3263 Bulk 461 1
    • 1 $5.59
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    Verical 2SC3263 299 5
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    Chip1Stop 2SC3263 Bulk 311
    • 1 $5.36
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    EVVO Semiconductor 2SC3264

    TRANS PNP 250V 16A TO-264
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    DigiKey 2SC3264 Tube 86 1
    • 1 $3.96
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    Sanken Electric Co Ltd 2SC3264

    TRANS NPN 230V 17A MT-200
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    Micro Commercial Components 2SC3265-O-TP

    TRANS NPN 30V 0.8A SOT23
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    Find more 2SC326 price and stock on Findchips.com

    2SC326 Datasheets (118)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC326 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC326 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC326 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC326 Unknown Cross Reference Datasheet Scan PDF
    2SC326 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC326 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC326 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC326 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC326 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC3260 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC3260 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC3260 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC3260 Shindengen Electric Fast Recovery Diodes / High Speed Transistors Scan PDF
    2SC3261 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC3261 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC3261 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC3261 Shindengen Electric Fast Recovery Diodes / High Speed Transistors Scan PDF
    2SC3262 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC3262 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC3262 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF

    2SC326 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA1296

    Abstract: 2SC3266
    Text: 2SA1296 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1296 ○ 低周波電力増幅用 ○ 電力スイッチング用 単位: mm • 2SC3266 とコンプリメンタリになります。 • 許容コレクタ損失が大きい。: PC = 750 mW (Ta = 25°C)


    Original     		PDF 2SA1296 2SC3266 SC-43 2SA1296 2SC3266

    2SC3266

    Abstract: 2SA1296
    Text: 2SC3266 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3266 ○ 低周波電力増幅用 ○ 電力スイッチング用 単位: mm • 2SA1296 とコンプリメンタリになります。 • 許容コレクタ損失が大きい。: PC = 750 mW (Ta = 25°C)


    Original     		PDF 2SC3266 2SA1296 SC-43 2SC3266 2SA1296

    2SC3263

    Abstract: 2SA1294 transistor 2sa1294
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1294 DESCRIPTION •High Collector-Emitter Breakdown VoltageV BR CEO= -230V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3263 APPLICATIONS ·Designed for audio and general purpose applications


    Original     		PDF 2SA1294 -230V 2SC3263 -230V 2SC3263 2SA1294 transistor 2sa1294

    2SC3264

    Abstract: 2SA1295 MP100M 2SA1295 2SC3264
    Text: 2SC3264 Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1295 •Electrical Characteristics Symbol Conditions 2SC3264 Unit VCB=230V 100max µA VEB=5V 100max µA IC=25mA 230min V 24.4±0.2 VCEO 230 V IEBO VEBO 5 V V(BR)CEO IC 17 A hFE VCE=4V, IC=5A


    Original     		PDF 2SC3264 2SA1295) MT-200 100max 230min 50min 60typ 2SC3264 2SA1295 MP100M 2SA1295 2SC3264

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 2SC3265-O 2SC3265-Y   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant "P" Suffix designates


    Original     		PDF 2SC3265-O 2SC3265-Y 2SA1298 OT-23

    2SC3265-O

    Abstract: 2sc3265
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components 2SC3265-O 2SC3265-Y Features • Power switching application x Complementary to 2SA1298 x Low frequency power amplifier application


    Original     		PDF 2SC3265-O 2SC3265-Y 2SA1298 OT-23 2sc3265

    2SA1297

    Abstract: 2SC3267
    Text: 2SA1297 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1297 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) @IC = −2 A • Complementary to 2SC3267. Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SA1297 2SC3267. 2SA1297 2SC3267

    2SC3266

    Abstract: 2SA1296
    Text: 2SC3266 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3266 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 2 A) · Complementary to 2SA1296 Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC3266 2SA1296 SC-43 2SC3266 2SA1296

    Untitled

    Abstract: No abstract text available
    Text: 2SC3267GR Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)20 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V).5 @I(C) (A) (Test Condition)2.0


    Original     		PDF 2SC3267GR Freq120M

    2SA1296

    Abstract: 2SC3266
    Text: 2SA1296 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1296 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) @IC = −2 A • Complementary to 2SC3266. Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SA1296 2SC3266. SC-43 2SA1296 2SC3266

    2SC3266

    Abstract: No abstract text available
    Text: ST 2SC3266 NPN Silicon Epitaxial Planar Transistor for power amplifier applications. and power switching The transistor is subdivided into three groups, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC3266 100ms* 2SC3266

    2SA1297

    Abstract: 2SC3267
    Text: 2SA1297 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1297 ○ 低周波電力増幅用 ○ 電力スイッチング用 単位: mm • 2SC3267 とコンプリメンタリになります。 • 許容コレクタ損失が大きい。: PC = 400 mW (Ta = 25°C)


    Original     		PDF 2SA1297 2SC3267 2SA1297 2SC3267

    2SA1294

    Abstract: 2SC3263
    Text: JMnic Product Specification 2SA1294 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type 2SC3263 APPLICATIONS ・Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline TO-3PN and symbol


    Original     		PDF 2SA1294 2SC3263 2SA1294 2SC3263

    2SC3266

    Abstract: No abstract text available
    Text: ST 2SC3266 NPN Silicon Epitaxial Planar Transistor for power amplifier applications. and power switching The transistor is subdivided into three groups, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC3266 100ms* 2SC3266

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE 2SC3265 LOW FREQUENCY POWER AMPLIFIER APPLICATION. Unit in mm POWER SWITCHING APPLICATIONS. + Q5 2.5— Œ3 FEATURES: . High DC Current Gain : hfE=100~320 . Low Saturation Voltage : VcE sat =0.4V (Max.) (IC=500tnA, lB=20mA) . Suitable for Driver Stage of Small Motor


    OCR Scan     		PDF 2SC3265 500tnA, 2SA1298 100mA 800mA 500mA,

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC3268 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3268 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. 1.6 MAX. N F = 1.7dB, |S2lel2 = 15.0dB f=500M Hz NF = 2dB, |S2lel2= 9-5dB (f = 1000MHz) Q4±a05, 1.7 M A X. MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC3268 1000MHz) 250mm2

    Untitled

    Abstract: No abstract text available
    Text: 2SA1297 TOSHIBA 2 S A 1 297 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm PO W ER SWITCHING APPLICATIONS 4.2M AX. — I . • • Low Saturation Voltage : V@e (sat)= -0.5V (Max.) @Iq = -2 A Complementary to 2SC3267.


    OCR Scan     		PDF 2SA1297 2SC3267. 961001EAA2'

    2SC3268

    Abstract: EIAJ C-3
    Text: TOSHIBA 2SC3268 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3268 Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS. NF = 1.7dB, |S2iel2= 15.0dB f = 500MHz NF = 2dB, |S2iel2= 9.5dB (f = 1000MHz) 1.6MAX. Q4±a05. 4.6 M A X . 1.7 MAX.


    OCR Scan     		PDF 2SC3268 500MHz) 1000MHz) 250mm2 -j250 -jl50 2SC3268 EIAJ C-3

    2SC3216

    Abstract: 2SC3217-M 2SC3214 2SA1295 2SC3264 2SC3217 2sc3246 2SC3264 2SC3215 2SA1285 2SC3251
    Text: - 150 - Ta=25t , *EPÍÍTc=25t;) m 2SC3214 2SC3215 2SC3216 2SC3217—M 2SC3218-M 2SC3225 2SC3233 2SC3242 2SC3242A 2SC3243 2SC3244 2SC3245 2SC3245A 2SC3246 2SC3247 2SC3249 2SC3250 2SC3251 2SC3253 2SC3254 2SC3255 2SC3256 2SC3257 2SC3258 2SC3263 2SC3264 2SC3265


    OCR Scan     		PDF EPttTc-25 2SC3214 2SC3215 2SC3216 2SC3217-M 800MHz 2SC3218-M 2SC3225 2SC3233 2SC3216 2SC3214 2SA1295 2SC3264 2SC3217 2sc3246 2SC3264 2SC3215 2SA1285 2SC3251

    2SC3260

    Abstract: 2-5K1A toshiba
    Text: SILICON NPN EPITAXIAL PLANAR T Y P E TRAN SISTO R A A A n A A f ì - 2SC3260 U nit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. 4.6 MAX. NF = 1.7dB, |S2lel2 = 15.0dB f=500M Hz NF = 2dB, |S 2 i e l 2 = 9-5dB(f=1000M Hz)


    OCR Scan     		PDF 2SC3260 1000M 2SC3268 2SC3260 2-5K1A toshiba

    2SA1296

    Abstract: 2SC3266
    Text: 2SA1296 TO SH IBA 2 S A 1 296 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm POWER SWITCHING APPLICATIONS . 5.1 MAX. • • Low Saturation Voltage : V qe (sat)“ —0-5 (Max.) @Iq = —2A Complementary to 2SC3266.


    OCR Scan     		PDF 2SA1296 2SC3266. SC-43 2SA1296 2SC3266

    A1297

    Abstract: 2SA1297 2SC3267
    Text: 2SA1297 TO SH IBA 2 S A 1 297 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm POWER SWITCHING APPLICATIONS 4.2M AX. • • Low Saturation Voltage : V q E (sat)“ —0.5V (Max.) @Iq = —2A Complementary to 2SC3267.


    OCR Scan     		PDF 2SA1297 2SC3267. A1297 2SA1297 2SC3267

    2SA12

    Abstract: 2SA1296 2SC3266 SA12
    Text: TOSHIBA 2SA1296 2 S A 1 296 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm PO W ER SWITCHING APPLICATIONS . 5.1 M AX. • • Low Saturation Voltage : V qe (sat)= —0-5 (Max.) @Iq = —2A Complementary to 2SC3266.


    OCR Scan     		PDF 2SA1296 2SC3266. SC-43 961001EAA2' 2SA12 2SA1296 2SC3266 SA12

    Untitled

    Abstract: No abstract text available
    Text: Is ~7 > 'J 7 . $ /Transistors 2SC3269 2SC 3269 H S t È | ÿ 7 0U - ^ N P N v ' j 3 > h 7 > y 7 $ iliiiJEE*illiffl/H ig h Voltage Amp. Triple Diffused Planar NPN Silicon Transistors • • W fi-^ i± [3 |/D im e n s io n s Unit : mm >J V iV v J i- r (B V c e o = 3 0 0 V ) 0


    OCR Scan     		PDF 2SC3269 --10m