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    2SC3266 Search Results

    2SC3266 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC3266 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC3266 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC3266 Unknown Cross Reference Datasheet Scan PDF
    2SC3266 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC3266 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC3266 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC3266 Toshiba SILICON NPN EPITAXIAL TYPE (PCT PROCESS) TRANSISTOR Scan PDF
    2SC3266 Toshiba NPN EPITAXIAL TYPE (POWER AMPLIFIER, SWITCHING APPLICATIONS) Scan PDF
    2SC3266 Toshiba NPN Transistor Scan PDF
    2SC3266 Toshiba TO-92 Transistors Scan PDF
    2SC3266-BL Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC3266BL Toshiba Silicon NPN Epitaxial Transistor Scan PDF
    2SC3266-GR Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC3266GR Toshiba Silicon NPN Epitaxial Transistor Scan PDF
    2SC3266-Y Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC3266Y Toshiba Silicon NPN Epitaxial Transistor Scan PDF

    2SC3266 Datasheets Context Search

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    2SA1296

    Abstract: 2SC3266
    Text: 2SA1296 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1296 ○ 低周波電力増幅用 ○ 電力スイッチング用 単位: mm • 2SC3266 とコンプリメンタリになります。 • 許容コレクタ損失が大きい。: PC = 750 mW (Ta = 25°C)


    Original     		PDF 2SA1296 2SC3266 SC-43 2SA1296 2SC3266

    2SC3266

    Abstract: 2SA1296
    Text: 2SC3266 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3266 ○ 低周波電力増幅用 ○ 電力スイッチング用 単位: mm • 2SA1296 とコンプリメンタリになります。 • 許容コレクタ損失が大きい。: PC = 750 mW (Ta = 25°C)


    Original     		PDF 2SC3266 2SA1296 SC-43 2SC3266 2SA1296

    2SC3266

    Abstract: 2SA1296
    Text: 2SC3266 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3266 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 2 A) · Complementary to 2SA1296 Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC3266 2SA1296 SC-43 2SC3266 2SA1296

    2SA1296

    Abstract: 2SC3266
    Text: 2SA1296 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1296 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) @IC = −2 A • Complementary to 2SC3266. Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SA1296 2SC3266. SC-43 2SA1296 2SC3266

    2SC3266

    Abstract: No abstract text available
    Text: ST 2SC3266 NPN Silicon Epitaxial Planar Transistor for power amplifier applications. and power switching The transistor is subdivided into three groups, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC3266 100ms* 2SC3266

    2SC3266

    Abstract: No abstract text available
    Text: ST 2SC3266 NPN Silicon Epitaxial Planar Transistor for power amplifier applications. and power switching The transistor is subdivided into three groups, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC3266 100ms* 2SC3266

    2sc3266

    Abstract: No abstract text available
    Text: 2SC3266 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3266 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 2 A) • Complementary to 2SA1296 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC3266 2SA1296 SC-43 2sc3266

    Untitled

    Abstract: No abstract text available
    Text: 2SC3266 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)20 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)750m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2SC3266 Freq120M eq120M

    2SA1296

    Abstract: 2SC3266
    Text: 2SA1296 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1296 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) @IC = −2 A · Complementary to 2SC3266. Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SA1296 2SC3266. SC-43 2SA1296 2SC3266

    2SC3266

    Abstract: No abstract text available
    Text: ST 2SC3266 NPN Silicon Epitaxial Planar Transistor for power amplifier applications. and power switching The transistor is subdivided into three groups, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC3266 100ms* 2SC3266

    2SC3266

    Abstract: No abstract text available
    Text: 2SC3266 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3266 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 2 A) • Complementary to 2SA1296 Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC3266 2SA1296 SC-43 2SC3266

    2SA1296

    Abstract: 2SC3266
    Text: 2SC3266 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3266 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 2 A) • Complementary to 2SA1296 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC3266 2SA1296 SC-43 2SA1296 2SC3266

    2SA1296

    Abstract: 2SC3266
    Text: 2SA1296 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1296 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) @IC = −2 A • Complementary to 2SC3266. Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SA1296 2SC3266. SC-43 2SA1296 2SC3266

    2SC3266

    Abstract: CMA2000 NPN transistor collector base and emitter
    Text: ST 2SC3266 NPN Silicon Epitaxial Planar Transistor for power amplifier applications. and power switching The transistor is subdivided into three groups, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC3266 100ms* 2SC3266 CMA2000 NPN transistor collector base and emitter

    2SA1296

    Abstract: 2SC3266
    Text: 2SA1296 TO SH IBA 2 S A 1 296 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm POWER SWITCHING APPLICATIONS . 5.1 MAX. • • Low Saturation Voltage : V qe (sat)“ —0-5 (Max.) @Iq = —2A Complementary to 2SC3266.


    OCR Scan     		PDF 2SA1296 2SC3266. SC-43 2SA1296 2SC3266

    2SA12

    Abstract: 2SA1296 2SC3266 SA12
    Text: TOSHIBA 2SA1296 2 S A 1 296 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm PO W ER SWITCHING APPLICATIONS . 5.1 M AX. • • Low Saturation Voltage : V qe (sat)= —0-5 (Max.) @Iq = —2A Complementary to 2SC3266.


    OCR Scan     		PDF 2SA1296 2SC3266. SC-43 961001EAA2' 2SA12 2SA1296 2SC3266 SA12

    2SA1296

    Abstract: 2SC3266
    Text: TOSHIBA 2SC3266 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3266 Unit in mm PO W ER AM PLIFER APPLICATIONS PO W ER SWITCHING APPLICATIONS . 5.1 M AX. • • Low Saturation Voltage : V q ^ ( s a t ) “ 0.5V (Max.) (l£ = 2A) Complementary to 2SA1296


    OCR Scan     		PDF 2SC3266 2SA1296 SC-43 961001EAA1 2SA1296 2SC3266

    2SB600 NEC

    Abstract: 2SD965 2SD966 2SD2061 2SB600 1951b 2sc3677 2SC3421 2SD1483 2sd1944
    Text: - m % tt Type No. 2S0 1951 2SD 1952 ^ 2SD 1953 ^ 2SD 1955 2S0 1956 2SD 1957 2SD 1958 2SD 2SD 2SD 2SD 2 so « 0 S ft Z SANYO 2SDS79 2SD15Z4 * $ TOSHIBA 2SC3266 H ft iL m NEC tL HITACHI 2SC2873 2SD1887 2SC3299 2SD1548 1953 □— A 2SD1145 2SD1628 2SD 1964 .


    OCR Scan     		PDF 2SD879 2SC3266 2SD965 2SD1624 2SC2873 2SD1119 2SD1963 2SD1692 2SD1233 2SC4339 2SB600 NEC 2SD965 2SD966 2SD2061 2SB600 1951b 2sc3677 2SC3421 2SD1483 2sd1944

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC3266 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS ^ MF mm Unit in mm PO W ER AM PLIFER APPLICATIONS PO W ER SWITCHING APPLICATIONS 5.1 M A X . • • Low Saturation Voltage : V q e ( s a t ) = ^-5V (Max.) (Iç = 2A) Complementary to 2SA1296


    OCR Scan     		PDF 2SC3266 2SA1296

    2SA1296

    Abstract: 2SC3266
    Text: TO SH IBA 2SC3266 TOSHIBA TRANSISTOR POWER AMPLIFER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3266 Unit in mm POWER SWITCHING APPLICATIONS • • . 5.1 MAX. Low Saturation Voltage : Vq ^ (sat) = 0.5V (Max.) (l£ = 2A) Complementary to 2SA1296


    OCR Scan     		PDF 2SC3266 2SA1296 SC-43 2SA1296 2SC3266

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272


    OCR Scan     		PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737

    2SC3558

    Abstract: 2SD1431 2SD1209 2SD2061 2SC2021 2SD1407 2sd 1507 2SD1488 k 1487 2SD2532
    Text: - 242 - % it Type No. 2SD 1477 2SD 1478 ^ 2SD 1479 4 2SD 1480 *• 2SD 1481 2SD 1482 2SD 1483 ¿ r 2SD 1484 r 2SD 1485 ^ 2SD I486 2SD 1487 f 2S0 1488 * 2SD 1489 2SD 14902SD 1491 , 2SD 1492 2SD 1493 2SD 1494 ^ 2SD 1495 2SD 1496 " 2SD 1497 ' 2SD 2SD 2SD 2SD


    OCR Scan     		PDF 2SC3331 2SC2021 2SD1851 2SD2532 2SD1209 2SD1383K 2SD1400 2SD1429 2SD1060 2SC3540 2SC3558 2SD1431 2SD2061 2SC2021 2SD1407 2sd 1507 2SD1488 k 1487 2SD2532

    te 1819

    Abstract: 2SD1878 2SC4211 2SD1649 2sd1856 1815 2SC4723 2sd1707 2SD1929 2SC4331
    Text: - a ¡g tt £ Manuf. Type So. H £ SANVO 2SD1667 IE TOSHIBA Q m jtec 2SD1406 ÍL HITACHI Ü ± il FUJITSU T MATSUSHITA 2SD2107 2SD1267 2SD2105 2SD1445A o MITSUBISHI 251 A ROHM 2SÜ1778 2SD 1813 ¡L 2SD 1814 S AI 2SD 1815 J = ft 2SD 1816 / = n 2SD 1817 X =


    OCR Scan     		PDF 2SD1813 2SD1814 2SD1667 2SD1406 2SD2107 2SD2105 2SD1267 2SD1445A 2SD1250 2SC4331 te 1819 2SD1878 2SC4211 2SD1649 2sd1856 1815 2SC4723 2sd1707 2SD1929

    2SC3216

    Abstract: 2SC3217-M 2SC3214 2SA1295 2SC3264 2SC3217 2sc3246 2SC3264 2SC3215 2SA1285 2SC3251
    Text: - 150 - Ta=25t , *EPÍÍTc=25t;) m 2SC3214 2SC3215 2SC3216 2SC3217—M 2SC3218-M 2SC3225 2SC3233 2SC3242 2SC3242A 2SC3243 2SC3244 2SC3245 2SC3245A 2SC3246 2SC3247 2SC3249 2SC3250 2SC3251 2SC3253 2SC3254 2SC3255 2SC3256 2SC3257 2SC3258 2SC3263 2SC3264 2SC3265


    OCR Scan     		PDF EPttTc-25 2SC3214 2SC3215 2SC3216 2SC3217-M 800MHz 2SC3218-M 2SC3225 2SC3233 2SC3216 2SC3214 2SA1295 2SC3264 2SC3217 2sc3246 2SC3264 2SC3215 2SA1285 2SC3251