2SD2105 Search Results

Contextual Info: 2SD2105 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier Outline TO -220FM n 1 2 3 2 1. Base 2. Collector 3. Emitter 1^ 1^ 1.5 kQ. Typ [1 130 Q. (Typ) ¿ 3 ¡t'D 2SD2105 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Rating

te 1819

Abstract: 2SD1878 2SC4211 2SD1649 2sd1856 1815 2SC4723 2sd1707 2SD1929 2SC4331
Contextual Info: - a ¡g tt £ Manuf. Type So. H £ SANVO 2SD1667 IE TOSHIBA Q m jtec 2SD1406 ÍL HITACHI Ü ± il FUJITSU T MATSUSHITA 2SD2107 2SD1267 2SD2105 2SD1445A o MITSUBISHI 251 A ROHM 2SÜ1778 2SD 1813 ¡L 2SD 1814 S AI 2SD 1815 J = ft 2SD 1816 / = n 2SD 1817 X =

Contextual Info: 2SD2105 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier Outline T O -2 2 0 F M 2SD2105 Absolute Maximum Ratings Ta = 25 °C Item Symbol Rating Unit Collector to base voltage ^G B O 120 V Collector to em itter voltage Emitter to base voltage

Contextual Info: HITACHI 2SD2105-Silicon NFN Triple Diffused Low Frequency Power Amplifier Absolute Maximum Ratings Ta = 25°C Item Symbol Rating Unit Collector to base voltage v cao 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 7 V Collector current

Hitachi DSA00164

Contextual Info: 2SD2105 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 12 3 1. Base 2. Collector 3. Emitter ID 1.5 kΩ Typ 130 Ω (Typ) 3 2SD2105 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage

Contextual Info: 2SD2105 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier Outline TO-220FM 2SD2105 Absolute Maximum Ratings Ta = 25°C Item Symbol Rating Unit C o lle c to r to base v o lta g e ^C B O 120 V C o lle c to r to e m itte r vo lta g e

2SD2105

Contextual Info: HITACHI 2SD2105— -Silicon NPN Triple Diffused Low Frequency Power Amplifier Absolute Maximum Ratings Ta = 25ÛC Item S ym bol Rating Unit C o lle cto r to base volta ge V CB0 120 V C o lle cto r to em itter voltage VCE0 120 V E m itter to base volta ge

2SD2103

Abstract: 2SD2096 TO220FM 2SD2102 2sd209 2SD2109 STC 100u 2SD2091 SC-63 2SD2093
Contextual Info: - 280 - Ta=25^,*EPÍáTc=25'C í± « 2SD2091 2SD2092 2SD2093 2SD2094 2SD2096 2SD2097 2SD2098 2SD2099 2SD2100 2SD2101 2SD2102 2SD2103 2SD2104 2SD2Ì05 2SD2106 2SD2107 2SD2108 2SD2109 2SD2110 2SD2111 2SD2112 2SD2113 2SD2114K 2SD2115L/S 2SD2116 2SD2117 2SD2119

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

2sk1058 equivalent

Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297
Contextual Info: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,

transistor 2sk

Abstract: transistor sp-10 4ac14 2SK157 transistor 2sk 70 2sj318 transistor 2sk 12 2SK2851 4AC14 TRANSISTOR 2sK 135 K 2796
Contextual Info: POWER TRANSISTOR •General switching Darlington transistor Characteristics tire 7.5 1 k - 20 k 6.0 1 k - 20 k 6.0 1 k - 20 k 8.0 1 k - 20 k 9.0 150011.5 500l_ 16.0 1 k -2 0 k 5.0 1 k -2 0 k 4.0 1 k -2 0 k 3.1 1 k -2 0 k 4.0 1 k -2 0 k 3.0 15006.0 1 k - 20 k

STRS6307

Abstract: STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020
Contextual Info: 2N3054 TO-66 2N32741 TO-66 2N4240 TO-66 2N4908 TO-3 2N3054A TO-66 2N3766 TO-66 2N4273 TO-66 2N4909 TO-3 2N3055 TO-3 2N3767 TO-66 2N4298 TO-66 2N4910 TO-66 2N3171 TO-3 2N3771 TO-3 2N4347 TO-3 2N4911 TO-66 2N3172 TO-3 2N3772 TO-3 2N4348 TO-3 2N4912 TO-66 2N3173