RF1131
Abstract: No abstract text available
Text: RF1131 BROADBAND HIGH POWER SP3T SWITCH Package Style: QFN, 12-pin, 2mmx2mm Features Broadband Performance Low Frequency - 2.5GHz Very Low Insertion Loss 0.30dB Typ at 0.90GHz 0.45dB Typ at 1.90GHz High Isolation: 31dB Typ at 1.90GHz P0.1dB>35dBm
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RF1131
12-pin,
90GHz
35dBm
12-pin
IEEE802
11b/g
RF1131
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RF1131
Abstract: DS100406
Text: RF1131 BROADBAND HIGH POWER SP3T SWITCH Package Style: QFN, 12-pin, 2mmx2mm Features Broadband Performance Low Frequency - 2.5GHz Very Low Insertion Loss 0.30dB Typ at 0.90GHz 0.45dB Typ at 1.90GHz High Isolation: 31dB Typ at 1.90GHz P0.1dB>35dBm
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Original
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RF1131
12-pin,
90GHz
35dBm
12-pin
IEEE802
11b/g
RF1131
DS100406
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PDF
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Untitled
Abstract: No abstract text available
Text: t>a 4 ^ 0 2=] 0017 2 fl^ T b S • MITSUBISHI RF POWER MODULE M57792 806-870MHZ, 13.5V, 20W, FM MOBILE RADIO BLOCK DIAGRAM PIN : © Pin @ V CC 1 VCC 2 ©VCC3 ® PO DGND © : RF INPUT : 1st. DC S U PPLY : 2nd. DC SU PPLY : 3rd. DC SU PPLY : RF OUTPUT
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M57792
806-870MHZ,
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Untitled
Abstract: No abstract text available
Text: RF1132 BROADBAND HIGH POWER SP3T SWITCH Package Style: QFN, 12-pin, 2mmx2mm Features ̈ ̈ ̈ ̈ ̈ ̈ Broadband Performance Low Frequency - 2.5GHz Low Insertion Loss 0.48dB Typ at 0.90GHz 0.68dB Typ at 1.90GHz Good Isolation: 23dB Typ at 1.90GHz Excellent Cross-Modulation
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RF1132
12-pin,
90GHz
-102dBm
-100dBm
34dBm
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RA03M8087M-101
Abstract: RA03M8087M
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M8087M RoHS Compliance , 806-870MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M8087M is a 3.6-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 806 to
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RA03M8087M
806-870MHz
RA03M8087M
870-MHz
RA03M8087M-101
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D408
Abstract: RA03M8087M-E01 RA03M8087M RA03M8087M-01
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M8087M 806-870MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M8087M is a 3.6-watt RF MOSFET Amplifier Module for 7.2-volt mobile radios that operate in the 806- to 870-MHz range.
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RA03M8087M
806-870MHz
RA03M8087M
870-MHz
av86-2-2833-9793
D408
RA03M8087M-E01
RA03M8087M-01
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"MOSFET Module"
Abstract: 03M8087 marking GG RA03M8087M rara RA03M8087M-101
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M8087 RA03M8087M 03M8087M RoHS Compliance , 806-870MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M8087M is a 3.6-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 806 to
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RA03M8087M
03M8087
806-870MHz
RA03M8087M
870-MHz
"MOSFET Module"
03M8087
marking GG
rara
RA03M8087M-101
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Untitled
Abstract: No abstract text available
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 123456367 1234563675 345636758 RoHS Compliance , 806-870MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M8087M is a 3.6-watt RF MOSFET Amplifier
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806-870MHz
RA03M8087M
870-MHz
RA03M8087M
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RF1131
Abstract: QFN 36 footprint antenna CDMA GPRS
Text: RF1131 BROADBAND HIGH POWER SP3T SWITCH Package Style: QFN, 12-pin, 2mmx2mm Features Broadband Performance Low Frequency - 2.5GHz Very Low Insertion Loss 0.30dB Typ at 0.90GHz 0.45dB Typ at 1.90GHz High Isolation: 31dB Typ at 1.90GHz P0.1dB>35dBm
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Original
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RF1131
12-pin,
90GHz
35dBm
12-pin
IEEE802
11b/g
RF1131
QFN 36 footprint
antenna CDMA GPRS
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PDF
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869MHz
Abstract: 8680MHz
Text: Golledge Electronics Ltd Eaglewood Park, ILMINSTER Somerset, TA19 9DQ, UK Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com SAW Filter 868.0MHz Part No: MP03372 Model: TA1219A Rev No: 1 A. MAXIMUM RATING: 1. Input Power Level: +10dBm 2. DC Voltage: 5V
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MP03372
10dBm
869MHz)
800MHz
838MHz
905MHz
915MHz
970MHz
TA1219A
869MHz
8680MHz
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RA03M8087M
Abstract: RA03M8087M-01
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M8087M 806-870MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M8087M is a 3.6-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 806- to
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RA03M8087M
806-870MHz
RA03M8087M
870-MHz
RA03M8087M-01
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PDF
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Untitled
Abstract: No abstract text available
Text: RF1132 BROADBAND HIGH POWER SP3T SWITCH Package Style: QFN, 12-pin, 2mmx2mm Features Broadband Performance Low Frequency - 2.5GHz Low Insertion Loss 0.48dB Typ at 0.90GHz 0.68dB Typ at 1.90GHz Good Isolation: 23dB Typ at 1.90GHz Excellent Cross-Modulation
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Original
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RF1132
12-pin,
90GHz
-102dBm
-100dBm
34dBm
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PDF
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MRF844
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF844 The RF Line NPN Silicon RF Power TVansistor . . . designed for 12.5 volt UHF large-signal, common-base am plifier applica tions in industrial and commercial FM equipment operating in the range of 8 0 6 -9 6 0 MHz.
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MRF844
MRF844
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Untitled
Abstract: No abstract text available
Text: RF1131 BROADBAND HIGH POWER SP3T SWITCH Package Style: QFN, 12-pin, 2mmx2mm Features Broadband Performance Low Frequency - 2.5GHz Very Low Insertion Loss 0.30dB Typ at 0.90GHz 0.45dB Typ at 1.90GHz High Isolation: 31dB Typ at 1.90GHz P0.1dB>35dBm
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Original
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RF1131
12-pin,
90GHz
35dBm
12-pin
IEEE802
11b/g
RF1131
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PDF
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RA03M8087M
Abstract: RA03M8087M-101 transistor marking zg
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M8087M RoHS Compliance , 806-870MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M8087M is a 3.6-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 806 to
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Original
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RA03M8087M
806-870MHz
RA03M8087M
870-MHz
RA03M8087M-101
transistor marking zg
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PDF
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