82MEV Search Results

Contextual Info: 7.5-20 Watt Hybrid SINGLE OUTPUT DEVICES • Rad Hard: TID > 100kRad Si • 2:1 margin: Operates beyond 200kRad TID • No SEE: LET > 82MeV*cm2/mg • Proton Resistant: No optocouplers used • Specifically engineered for 50 VDC satellite bus • Completely self contained Thick Film

Contextual Info: 12.5-30 Watt Hybrid SINGLE OUTPUT DEVICES • Rad Hard: TID > 100kRad Si • 2:1 margin: Operates beyond 200kRad TID • No SEE: LET > 82MeV*cm2/mg • Proton Resistant: No optocouplers used • Specifically engineered for 70 VDC satellite bus • Completely self contained Thick Film

Contextual Info: 12.5-30 Watt Hybrid SINGLE OUTPUT DEVICES • Rad Hard: TID > 100kRad Si • 2:1 margin: Operates beyond 200kRad TID • No SEE: LET > 82MeV*cm2/mg • Proton Resistant: No optocouplers used • Specifically designed for 100 VDC satellite bus • Completely self contained Thick Film

Contextual Info: 32.5-80 Watt Hybrid SINGLE OUTPUT DEVICES • Rad Hard: TID > 100kRad Si • 2:1 margin: Operates beyond 200kRad TID • No SEE: LET > 82MeV*cm2/mg • Proton Resistant: No optocouplers used • Specifically engineered for 70 VDC satellite bus • Completely self contained Thick Film

Contextual Info: 3.75-6.5 Watt Hybrid Features SINGLE OUTPUT DEVICES • Rad Hard: TID > 100kRad Si • 2:1 margin: Operates beyond 200kRad TID • No SEE: LET > 82MeV*cm2/mg • Proton Resistant: No optocouplers used • Specifically designed for redundant or individual space applications

Contextual Info: 19.5-40 Watt Hybrid Features SINGLE OUTPUT DEVICES 7193-S03.3 26.4W • Rad Hard: TID > 100kRad(Si) • 2:1 margin: Operates beyond 200kRad TID • No SEE: LET > 82MeV*cm2/mg • Proton Resistant: No optocouplers used • Specifically engineered for 50 VDC

Contextual Info: 3.75-6.5 Watt Hybrid Features SINGLE OUTPUT DEVICES • Rad Hard: TID > 100kRad Si • 2:1 margin: Operates beyond 200kRad TID • No SEE: LET > 82MeV*cm2/mg • Proton Resistant: No optocouplers used • Specifically designed for 100 VDC satellite bus • Completely self contained Thick Film

Contextual Info: 7.5-20 Watt Hybrid SINGLE OUTPUT DEVICES • Rad Hard: TID > 100kRad Si • 2:1 margin: Operates beyond 200kRad TID • No SEE: LET > 82MeV*cm2/mg • Proton Resistant: No optocouplers used • Specifically engineered for 70 VDC satellite bus • Completely self contained Thick Film

Contextual Info: 32.5-80 Watt Hybrid SINGLE OUTPUT DEVICES • Rad Hard: TID > 100kRad Si • 2:1 margin: Operates beyond 200kRad TID • No SEE: LET > 82MeV*cm2/mg • Proton Resistant: No optocouplers used • Specifically designed for 100 VDC satellite bus • Completely self contained Thick Film

75184

Contextual Info: 19.5-40 Watt Hybrid Features SINGLE OUTPUT DEVICES 9193-S03.3 26.4W • Rad Hard: TID > 100kRad(Si) • 2:1 margin: Operates beyond 200kRad TID • No SEE: LET > 82MeV*cm2/mg • Proton Resistant: No optocouplers used • Specifically designed for 100 VDC

Contextual Info: 19.5-40 Watt Hybrid Features SINGLE OUTPUT DEVICES 5193-S03.3 26.4W • Rad Hard: TID > 100kRad(Si) • 2:1 margin: Operates beyond 200kRad TID • No SEE: LET > 82MeV*cm2/mg • Proton Resistant: No optocouplers used • Specifically designed for redundant or

Contextual Info: 3.75-6.5 Watt Hybrid Features SINGLE OUTPUT DEVICES • Rad Hard: TID > 100kRad Si • 2:1 margin: Operates beyond 200kRad TID • No SEE: LET > 82MeV*cm2/mg • Proton Resistant: No optocouplers used • Specifically engineered for 50 VDC satellite bus • Completely self contained Thick Film

Contextual Info: 3.75-6.5 Watt Hybrid Features SINGLE OUTPUT DEVICES • Rad Hard: TID > 100kRad Si • 2:1 margin: Operates beyond 200kRad TID • No SEE: LET > 82MeV*cm2/mg • Proton Resistant: No optocouplers used • Specifically engineered for 70 VDC satellite bus • Completely self contained Thick Film

Contextual Info: 7.5-20 Watt Hybrid SINGLE OUTPUT DEVICES • Rad Hard: TID > 100kRad Si • 2:1 margin: Operates beyond 200kRad TID • No SEE: LET > 82MeV*cm2/mg • Proton Resistant: No optocouplers used • Specifically designed for 100 VDC satellite bus • Completely self contained Thick Film

Contextual Info: 32.5-80 Watt Hybrid SINGLE OUTPUT DEVICES • Rad Hard: TID > 100kRad Si • 2:1 margin: Operates beyond 200kRad TID • No SEE: LET > 82MeV*cm2/mg • Proton Resistant: No optocouplers used • Specifically engineered for 50 VDC satellite bus • Completely self contained Thick Film

Contextual Info: FSGL130R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both

FSGYE130R4

Abstract: Rad Hard in Fairchild for MOSFET 2E12 FSGYE130D1 FSGYE130R3
Contextual Info: FSGYE130R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both

Rad Hard in Fairchild for MOSFET

Abstract: 1E14 2E12 FSPL234D1 FSPL234F FSPL234R FSPL234R3
Contextual Info: FSPL234R, FSPL234F Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the

IRF460

Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Contextual Info: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,

1E14

Abstract: 2E12 FSPYC264D1 FSPYC264F FSPYC264R FSPYC264R3 iodine Rad Hard in Fairchild for MOSFET
Contextual Info: FSPYC264R, FSPYC264F Data Sheet 2001 Fairchild Semiconductor Corporation Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or

2E12

Abstract: FSPL130D1 FSPL130R3 Rad Hard in Fairchild for MOSFET
Contextual Info: FSPL130R, FSPL130F Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the

1E14

Abstract: 2E12 FSGL234D1 FSGL234R3 FSGL234R4
Contextual Info: FSGL234R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs itle GL R bdin dd, GR is- Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment.

FSGYC260R3

Abstract: FSGYC260R4 1E14 2E12 FSGYC260D1 FSGYC260R Rad Hard in Fairchild for MOSFET
Contextual Info: FSGYC260R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs itle Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both extremely low

LSE B3 transformer

Abstract: smd diode 44a LSE B3 LSE B3 transformer datasheet LSE B4 transformer 1E14 2E12 FSGYC264D1 FSGYC264R3 FSGYC264R4
Contextual Info: FSGYC264R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs itle GL R bdin dd, GR isCha l wer STs) tho yds erpoon, mitor, diadd, GR is- Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or