800MHZ TRANSISTOR Search Results

k 3918 TRANSISTOR

Abstract: pin diagram of bf 494 transistor 7497 spice smd transistor 501 smd transistors 458 transistor 381 7943 RF NPN POWER TRANSISTOR C 10-12 GHZ BFG21W PMBT3904 09 18 140 9622
Contextual Info: Philips Semiconductors 800MHz PA Driver with BFG21W 800MHz PA Driver with BFG21W Application Note JL-9803v2 Author Jarek Lucek November 8, 1998 Discrete Semiconductors - Mansfield 171 Forbes Blvd. Mansfield, MA 02048 Abstract th BFG21W, the new 5 generation transistor from Philips Semiconductors, is well suited for PA driver

Contextual Info: HFA5253 HARRIS S E M I C O N D U C T O R 800MHz, Ultra High-Speed Monolithic Pin Driver November 1996 Features Description • High Digital Data R ate. 800MHz The HFA5253 is a very high speed monolithic pin driver

p 8123 transistor

Abstract: HFA5251 HFA5251Y
Contextual Info: HFA5251 S E M I C O N D U C T O R 800MHz Monolithic Pin Driver November 1996 Features Description • High Digital Data Rate . . . . . . . . . . . . . . . . . . . . 800MHz The HFA5251 is a very high speed monolithic pin driver solution for high performance test systems. The device will

Contextual Info: HFA5253 S E M I C O N D U C T O R 800MHz, Ultra High-Speed Monolithic Pin Driver July 1997 Features Description • High Digital Data Rate . . . . . . . . . . . . . . . . . . . . 800MHz The HFA5253 is a very high speed monolithic pin driver solution for high performance test systems. The device will

HFA5250

Abstract: HFA5251 HFA5253 HFA5253CB
Contextual Info: HFA5253 S E M I C O N D U C T O R 800MHz, Ultra High-Speed Monolithic Pin Driver July 1997 Features Description • High Digital Data Rate . . . . . . . . . . . . . . . . . . . . 800MHz The HFA5253 is a very high speed monolithic pin driver solution for high performance test systems. The device will

Contextual Info: HFA5251 HARRIS S E M I C O N D U C T O R 800MHz Monolithic Pin Driver November 1996 Features Description • High Digital Data R ate. 800MHz The HFA5251 is a very high speed monolithic pin driver solution for high performance test systems. The device will

XC-0900-03S

Abstract: GSM-710 R-GSM-900 s41 230 CWPG ALM-1522 GSM-850 P-GSM-900 FR4 substrate 10GHz T-GSM-810
Contextual Info: ALM-1522 Low Noise High Gain, High Linearity Balanced LNA Module for 800MHz to 1.0GHz Application Note 5419 Introduction Avago Technologies’ ALM-1522 is a very low noise, high gain and high linearity dual amplifier module, operating from 800MHz to 1.0GHz. In the balanced configuration, the measured performances on the demonstration

Contextual Info: HFA5253 HARRIS S E M I C O N D U C T O R 800MHz, Ultra High-Speed Monolithic Pin Driver Features Description • High Digital Data R ate. 800MHz T he HFA5253 is a v e ry high spe ed m on olithic pin driver solution for high pe rfo rm an ce te st system s. T he de vice w ill

MAX2056

Abstract: MAX2056ETX MAX2056ETX-T MAX2057 900 mhz av transmitter C5281
Contextual Info: 19-3508; Rev 0; 2/05 KIT ATION EVALU LE B A IL A AV 800MHz to 1000MHz Variable-Gain Amplifier with Analog Gain Control The MAX2056 general-purpose, high-performance variable-gain amplifier VGA is designed to operate in the 800MHz to 1000MHz frequency range*. This device features 15.5dB of gain, 4.5dB of noise figure, and an output 1dB compression point of 23.5dBm. The MAX2056

NTE2511

Abstract: NTE2512
Contextual Info: NTE2511 NPN & NTE2512 (PNP) Silicon Complementary Transistors High Frequency Video Output for HDTV Features: D High Gain Bandwidth Product: fT = 800MHz Typ. D Low Reverse Transfer Capacitance and Excellent HF Response: NTE2511: Cre = 2.9pF NTE2512: Cre = 4.6pF

2SA1474

Abstract: A147 SC46 T0220AB
Contextual Info: Ordering num ber: EN 2526 2SA1474/2SC3780 PNP/NPN Epitaxial Planar Silicon Transistor SANYO Ultrahigh-Definition CRT Display _Video Output Applications i Applications . Video output . Color TV chroma output . Wide-band amp Features . High fT fT typ=800MHz

stc*9018

Abstract: STC9018N STC9018
Contextual Info: STC9018N Semiconductor NPN Silicon Transistor Description • High frequency low noise amplifier application • VHF band amplifier application Features • Low noise figure : NF = 4dB Typ. at f=100MHz • High transition frequency fT = 800MHz(Typ.) Ordering Information

STC9018SF

Abstract: STC9018 KSD-T5C007-000
Contextual Info: STC9018SF Semiconductor NPN Silicon Transistor Description • High frequency low noise amplifier application • VHF band amplifier application Features • Low noise figure : NF = 4dB Typ. at f=100MHz • High transition frequency fT = 800MHz(Typ.) Ordering Information

9019 transistor

Abstract: 9019 sts9018
Contextual Info: STS9018 Semiconductor NPN Silicon Transistor Description • High frequency low noise amplifier application • VHF band amplifier application Features • Low noise figure : NF = 4dB Max. at f=100MHz • High transition frequency fT = 800MHz(Typ.) Ordering Information

8 NARROW SO

Abstract: power transistors RF power transistor MAX2430 capacitor variable
Contextual Info: ADVANCE INFORMATION All information in this data sheet is preliminary and subject to change. 6/95 800MHz to 1000MHz Low-Voltage Power Amplifier/Predriver _Applications Cordless Phones _Features ♦ 3-Cell Battery Operation

NTE484

Contextual Info: NTE484 Silicon NPN Transistor RF Power Output for Mobile Use, PO = 25W @ 947MHz Description: The NTE484 is a 12.5 Volt epitaxial silicon NPN planer transistor designed for primarily for 800MHz mobile communications. This device is internally input matched in the common base configuration

Contextual Info: PRELIMINARY Integrated Circuit Systems, Inc. ICS84320-01 800MHZ, CRYSTAL-TO-3.3V DIFFERENTIAL LVPECL FREQUENCY SYNTHESIZER GENERAL DESCRIPTION FEATURES The ICS84320-01 is a general purpose, dual output Crystal-to-3.3V Differential LVPECL High FreHiPerClockS

Contextual Info: PRELIMINARY Integrated Circuit Systems, Inc. ICS84320-01 800MHZ, CRYSTAL-TO-3.3V DIFFERENTIAL LVPECL FREQUENCY SYNTHESIZER GENERAL DESCRIPTION FEATURES The ICS84320-01 is a general purpose, dual output Crystal-to-3.3V Differential LVPECL High FreHiPerClockS

double balanced mixer balun

Abstract: bxc17 c221 TRANSISTOR gilbert cell differential pair high frequency mixer C12A C12B PMB2207 gilbert mixer DOUBLE BALANCED MODULATOR
Contextual Info: SIEM EN S Mixer DC - 2.5GHz and Vector Modulator 80 - 800MHz PMB 2207 Target Spezifikation Bipolar IC General Overview Features Vignette • Direct quadrature modulator with separate additional double balanced active mixer • Direct quadrature modulation

STS9018

Contextual Info: STS9018 NPN Silicon Transistor Description • High frequency low noise am plifier applicat ion • VHF band am plifier applicat ion PIN Connection C Features B C • Low noise figure : NF = 4dB Max. at f= 100MHz • High t ransit ion frequency f T = 800MHz( Typ.)

Contextual Info: RFHA3944 60W GaN WIDEBAND POWER AMPLIFIER RFHA3944 Proposed 60W GaN WIDEBAND POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF360-2 Features  Broadband Operation  Tunable from DC to 4GHz Instantaneous: 800MHz to 2500MHz Advanced GaN HEMT Technology

Contextual Info: RFHA3942 35W GaN WIDEBAND POWER AMPLIFIER RFHA3942 Proposed 35W GaN WIDEBAND POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF360-2 Features  Broadband Operation  Tunable from DC to 4GHz Instantaneous: 800MHz to 2500MHz Advanced GaN HEMT Technology

Contextual Info: 19-1506; Rev 0; 7/99 GSM900/DCS1800/PCS1900 Triple-Band, Low-Noise Amplifiers Features ♦ Wide Operating Frequency Range 800MHz to 1000MHz MAX2651 1800MHz to 2000MHz (MAX2651/MAX2653) ♦ Excellent Low-Noise Performance 1.2dB over GSM Receive Band (MAX2651)

Contextual Info: SIEMENS Mixer DC - 2.5GHz and Vector Modulator 80 - 800MHz PMB 2207 Target Spezifi kati on Bi pol ar IC General Overview Features • Direct quadrature modulator with separate additional double balanced active mixer • Direct quadrature modulation • •