k 3918 TRANSISTOR
Abstract: pin diagram of bf 494 transistor 7497 spice smd transistor 501 smd transistors 458 transistor 381 7943 RF NPN POWER TRANSISTOR C 10-12 GHZ BFG21W PMBT3904 09 18 140 9622
Text: Philips Semiconductors 800MHz PA Driver with BFG21W 800MHz PA Driver with BFG21W Application Note JL-9803v2 Author Jarek Lucek November 8, 1998 Discrete Semiconductors - Mansfield 171 Forbes Blvd. Mansfield, MA 02048 Abstract th BFG21W, the new 5 generation transistor from Philips Semiconductors, is well suited for PA driver
|
Original
|
800MHz
BFG21W
JL-9803v2
BFG21W,
BFG21W
800MHz,
25dBm,
k 3918 TRANSISTOR
pin diagram of bf 494 transistor
7497 spice
smd transistor 501
smd transistors 458
transistor 381 7943
RF NPN POWER TRANSISTOR C 10-12 GHZ
PMBT3904
09 18 140 9622
|
PDF
|
p 8123 transistor
Abstract: HFA5251 HFA5251Y
Text: HFA5251 S E M I C O N D U C T O R 800MHz Monolithic Pin Driver November 1996 Features Description • High Digital Data Rate . . . . . . . . . . . . . . . . . . . . 800MHz The HFA5251 is a very high speed monolithic pin driver solution for high performance test systems. The device will
|
Original
|
HFA5251
800MHz
800MHz
HFA5251
HFA5251,
1-800-4-HARRIS
p 8123 transistor
HFA5251Y
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HFA5253 S E M I C O N D U C T O R 800MHz, Ultra High-Speed Monolithic Pin Driver July 1997 Features Description • High Digital Data Rate . . . . . . . . . . . . . . . . . . . . 800MHz The HFA5253 is a very high speed monolithic pin driver solution for high performance test systems. The device will
|
Original
|
HFA5253
800MHz,
HFA5253
HFA5253,
|
PDF
|
HFA5250
Abstract: HFA5251 HFA5253 HFA5253CB
Text: HFA5253 S E M I C O N D U C T O R 800MHz, Ultra High-Speed Monolithic Pin Driver July 1997 Features Description • High Digital Data Rate . . . . . . . . . . . . . . . . . . . . 800MHz The HFA5253 is a very high speed monolithic pin driver solution for high performance test systems. The device will
|
Original
|
HFA5253
800MHz,
800MHz
HFA5253
470pF
500MHz
pp238-241,
pp260-263,
HFA5250
HFA5251
HFA5253CB
|
PDF
|
XC-0900-03S
Abstract: GSM-710 R-GSM-900 s41 230 CWPG ALM-1522 GSM-850 P-GSM-900 FR4 substrate 10GHz T-GSM-810
Text: ALM-1522 Low Noise High Gain, High Linearity Balanced LNA Module for 800MHz to 1.0GHz Application Note 5419 Introduction Avago Technologies’ ALM-1522 is a very low noise, high gain and high linearity dual amplifier module, operating from 800MHz to 1.0GHz. In the balanced configuration, the measured performances on the demonstration
|
Original
|
ALM-1522
800MHz
ALM-1522
900MHz
43dBm
28dBm
ALM-1222
ALM-1322
XC-0900-03S
GSM-710
R-GSM-900
s41 230
CWPG
GSM-850
P-GSM-900
FR4 substrate 10GHz
T-GSM-810
|
PDF
|
MAX2056
Abstract: MAX2056ETX MAX2056ETX-T MAX2057 900 mhz av transmitter C5281
Text: 19-3508; Rev 0; 2/05 KIT ATION EVALU LE B A IL A AV 800MHz to 1000MHz Variable-Gain Amplifier with Analog Gain Control The MAX2056 general-purpose, high-performance variable-gain amplifier VGA is designed to operate in the 800MHz to 1000MHz frequency range*. This device features 15.5dB of gain, 4.5dB of noise figure, and an output 1dB compression point of 23.5dBm. The MAX2056
|
Original
|
800MHz
1000MHz
MAX2056
MAX2056
39dBm,
cdma2000®
MAX2056ETX
MAX2056ETX-T
MAX2057
900 mhz av transmitter
C5281
|
PDF
|
NTE2511
Abstract: NTE2512
Text: NTE2511 NPN & NTE2512 (PNP) Silicon Complementary Transistors High Frequency Video Output for HDTV Features: D High Gain Bandwidth Product: fT = 800MHz Typ. D Low Reverse Transfer Capacitance and Excellent HF Response: NTE2511: Cre = 2.9pF NTE2512: Cre = 4.6pF
|
Original
|
NTE2511
NTE2512
800MHz
NTE2511:
NTE2512:
100mA,
NTE2511
NTE2512
|
PDF
|
stc*9018
Abstract: STC9018N STC9018
Text: STC9018N Semiconductor NPN Silicon Transistor Description • High frequency low noise amplifier application • VHF band amplifier application Features • Low noise figure : NF = 4dB Typ. at f=100MHz • High transition frequency fT = 800MHz(Typ.) Ordering Information
|
Original
|
STC9018N
100MHz
800MHz
STC9018
O-92N
KSD-T0C030-000
stc*9018
STC9018N
STC9018
|
PDF
|
STC9018SF
Abstract: STC9018 KSD-T5C007-000
Text: STC9018SF Semiconductor NPN Silicon Transistor Description • High frequency low noise amplifier application • VHF band amplifier application Features • Low noise figure : NF = 4dB Typ. at f=100MHz • High transition frequency fT = 800MHz(Typ.) Ordering Information
|
Original
|
STC9018SF
100MHz
800MHz
OT-23F
KSD-T5C007-000
STC9018SF
STC9018
KSD-T5C007-000
|
PDF
|
9019 transistor
Abstract: 9019 sts9018
Text: STS9018 Semiconductor NPN Silicon Transistor Description • High frequency low noise amplifier application • VHF band amplifier application Features • Low noise figure : NF = 4dB Max. at f=100MHz • High transition frequency fT = 800MHz(Typ.) Ordering Information
|
Original
|
STS9018
100MHz
800MHz
KST-9019-000
9019 transistor
9019
sts9018
|
PDF
|
STS9018
Abstract: No abstract text available
Text: STS9018 NPN Silicon Transistor Description • High frequency low noise amplifier application • VHF band amplifier application PIN Connection C Features B C • Low noise figure : NF = 4dB Max. at f=100MHz • High transition frequency fT = 800MHz(Typ.)
|
Original
|
STS9018
100MHz
800MHz
KSD-T0A049-000
STS9018
|
PDF
|
8 NARROW SO
Abstract: power transistors RF power transistor MAX2430 capacitor variable
Text: ADVANCE INFORMATION All information in this data sheet is preliminary and subject to change. 6/95 800MHz to 1000MHz Low-Voltage Power Amplifier/Predriver _Applications Cordless Phones _Features ♦ 3-Cell Battery Operation
|
Original
|
800MHz
1000MHz
100mW
16-Pin
MAX2430CSE
915MHz
100mW
20dBm)
8 NARROW SO
power transistors
RF power transistor
MAX2430
capacitor variable
|
PDF
|
NTE484
Abstract: No abstract text available
Text: NTE484 Silicon NPN Transistor RF Power Output for Mobile Use, PO = 25W @ 947MHz Description: The NTE484 is a 12.5 Volt epitaxial silicon NPN planer transistor designed for primarily for 800MHz mobile communications. This device is internally input matched in the common base configuration
|
Original
|
NTE484
947MHz
NTE484
800MHz
836MHz
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY Integrated Circuit Systems, Inc. ICS84320-01 800MHZ, CRYSTAL-TO-3.3V DIFFERENTIAL LVPECL FREQUENCY SYNTHESIZER GENERAL DESCRIPTION FEATURES The ICS84320-01 is a general purpose, dual output Crystal-to-3.3V Differential LVPECL High FreHiPerClockS
|
Original
|
ICS84320-01
800MHZ,
75MHz
800MHz
14MHz
40MHz
600MHz
52MHz,
88MHz
|
PDF
|
|
STS9018
Abstract: No abstract text available
Text: STS9018 NPN Silicon Transistor Description • High frequency low noise am plifier applicat ion • VHF band am plifier applicat ion PIN Connection C Features B C • Low noise figure : NF = 4dB Max. at f= 100MHz • High t ransit ion frequency f T = 800MHz( Typ.)
|
Original
|
STS9018
100MHz
800MHz(
KSD-T0A049-000
STS9018
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RFHA3944 60W GaN WIDEBAND POWER AMPLIFIER RFHA3944 Proposed 60W GaN WIDEBAND POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF360-2 Features Broadband Operation Tunable from DC to 4GHz Instantaneous: 800MHz to 2500MHz Advanced GaN HEMT Technology
|
Original
|
RFHA3944
RF360-2
800MHz
2500MHz
-40dBc
DS120418
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RFHA3942 35W GaN WIDEBAND POWER AMPLIFIER RFHA3942 Proposed 35W GaN WIDEBAND POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF360-2 Features Broadband Operation Tunable from DC to 4GHz Instantaneous: 800MHz to 2500MHz Advanced GaN HEMT Technology
|
Original
|
RFHA3942
RF360-2
800MHz
2500MHz
-40dBc
DS120418
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 19-1506; Rev 0; 7/99 GSM900/DCS1800/PCS1900 Triple-Band, Low-Noise Amplifiers Features ♦ Wide Operating Frequency Range 800MHz to 1000MHz MAX2651 1800MHz to 2000MHz (MAX2651/MAX2653) ♦ Excellent Low-Noise Performance 1.2dB over GSM Receive Band (MAX2651)
|
Original
|
GSM900/DCS1800/PCS1900
MAX2651/MAX2653
GSM900,
DCS1800,
PCS1900
MAX2651
GSM900
DCS1800/PCS1900
MAX2653
DCS1800
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HFA5253 HARRIS S E M I C O N D U C T O R 800MHz, Ultra High-Speed Monolithic Pin Driver November 1996 Features Description • High Digital Data R ate. 800MHz The HFA5253 is a very high speed monolithic pin driver
|
OCR Scan
|
HFA5253
800MHz,
800MHz
HFA5253
2670nm
1730nm
525nm
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HFA5251 HARRIS S E M I C O N D U C T O R 800MHz Monolithic Pin Driver November 1996 Features Description • High Digital Data R ate. 800MHz The HFA5251 is a very high speed monolithic pin driver solution for high performance test systems. The device will
|
OCR Scan
|
HFA5251
800MHz
800MHz
HFA5251
HFA5251,
HFA5251â
111IL
RG-58
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HFA5253 HARRIS S E M I C O N D U C T O R 800MHz, Ultra High-Speed Monolithic Pin Driver Features Description • High Digital Data R ate. 800MHz T he HFA5253 is a v e ry high spe ed m on olithic pin driver solution for high pe rfo rm an ce te st system s. T he de vice w ill
|
OCR Scan
|
HFA5253
800MHz,
800MHz
HFA5253
525nm
|
PDF
|
2SA1474
Abstract: A147 SC46 T0220AB
Text: Ordering num ber: EN 2526 2SA1474/2SC3780 PNP/NPN Epitaxial Planar Silicon Transistor SANYO Ultrahigh-Definition CRT Display _Video Output Applications i Applications . Video output . Color TV chroma output . Wide-band amp Features . High fT fT typ=800MHz
|
OCR Scan
|
2SA1474/2SC3780
800MHz)
2SA1474
A147
SC46
T0220AB
|
PDF
|
double balanced mixer balun
Abstract: bxc17 c221 TRANSISTOR gilbert cell differential pair high frequency mixer C12A C12B PMB2207 gilbert mixer DOUBLE BALANCED MODULATOR
Text: SIEM EN S Mixer DC - 2.5GHz and Vector Modulator 80 - 800MHz PMB 2207 Target Spezifikation Bipolar IC General Overview Features Vignette • Direct quadrature modulator with separate additional double balanced active mixer • Direct quadrature modulation
|
OCR Scan
|
800MHz
P-TSSOP-24-1
double balanced mixer balun
bxc17
c221 TRANSISTOR
gilbert cell differential pair
high frequency mixer
C12A
C12B
PMB2207
gilbert mixer
DOUBLE BALANCED MODULATOR
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEMENS Mixer DC - 2.5GHz and Vector Modulator 80 - 800MHz PMB 2207 Target Spezifi kati on Bi pol ar IC General Overview Features • Direct quadrature modulator with separate additional double balanced active mixer • Direct quadrature modulation • •
|
OCR Scan
|
800MHz
P-TSSOP-24
frequenC10
617dB-1010
fl235bQ5
P-7SSOP-24-1
fl23SbOS
|
PDF
|