ADA4871-2
Abstract: ADA4817-1 ADA4817 ADA4817-2 ADA4817-2ACP ADA4817-1ACPZ-RL1
Text: Low Noise, 1 GHz FastFET Op Amps ADA4817-1/ADA4817-2 TOP VIEW Not to Scale 8 +VS FB 2 7 OUT –IN 3 6 NC +IN 4 5 –VS 07756-001 PD 1 NC = NO CONNECT Figure 1. 8-Lead ADA4817-1 LFCSP (CP-8-2) ADA4817-2 +IN1 2 12 –VS1 11 NC NC 3 10 +IN2 –VS2 4 9 –IN2
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ADA4817-1/ADA4817-2
ADA4817-1
ADA4817-1
ADA4817-2
cA4817-1ACPZ-R71
ADA4817-2ACPZ-R21
ADA4817-2ACPZ-RL1
ADA4817-2ACPZ-R71
16-Lead
ADA4871-2
ADA4817
ADA4817-2
ADA4817-2ACP
ADA4817-1ACPZ-RL1
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Untitled
Abstract: No abstract text available
Text: Triple, 1.5 GHz Op Amp AD8003 POWER DOWN 2 +IN 2 –IN 2 FEEDBACK 2 +VS2 24 23 22 21 20 19 2 17 FEEDBACK 3 –IN 1 3 16 –IN 3 4 15 POWER DOWN 1 5 14 POWER DOWN 3 –VS1 6 13 –VS3 APPLICATIONS 7 8 9 10 11 12 +IN 3 05721-001 +IN 1 OUT 3 FEEDBACK 1 NC +VS3
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AD8003
CP-24-1)
AD8003ACPZ-R2
AD8003ACPZ-REEL1
AD8003ACPZ-REEL71
EVAL-AD8003-3CPEZ1
24-Lead
CP-24-1
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SST12LP14E-QX8E
Abstract: 12LP14E
Text: PR OP R CO IE NF TAR ID Y E N AN TIA D L 2.4 GHz High-Efficiency Amplifier SST12LP14E A Microchip Technology Company Data Sheet SST12LP14E is a high-efficiency, ultra-compact power amplifier PA based on the highly-reliable InGaP/GaAs HBT technology. Designed to operate over the 2.4
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SST12LP14E
SST12LP14E
DS75037B
SST12LP14E-QX8E
12LP14E
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SST12LP07A
Abstract: 2.4 ghz transmitter ds75-035
Text: PR OP R CO IE NF TAR ID Y E N AN TIA D L 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP07A A Microchip Technology Company Data Sheet The SST12LP07A is a versatile power amplifier based on the highly-reliable InGaP/ GaAs HBT technology. It is easily configured for high-power applications with excellent 30.8% power-added efficiency, operating over the 2.4- 2.5 GHz frequency band
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SST12LP07A
SST12LP07A
DS75035B
2.4 ghz transmitter
ds75-035
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802.11AC
Abstract: SST12LP18E 802.11g "channel estimation"
Text: PR OP R CO IE NF TAR ID Y E N AN TIA D L 2.4 GHz High-Efficiency, High-Gain Power Amplifier SST12LP18E A Microchip Technology Company Data Sheet The SST12LP18E is a versatile power amplifier based on the highly-reliable InGaP/GaAs HBT technology. The SST12LP18E is a 2.4 GHz high-efficiency
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SST12LP18E
SST12LP18E
11b/g/n/ac
DS-75003C
802.11AC
802.11g
"channel estimation"
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SST12LP08
Abstract: SST12LP08-QX6E 12LP08 12-Contact SST12LP08-QX6E-K JEP95 "channel estimation"
Text: PR OP R CO IE NF TAR ID Y E N AN TIA D L 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP08 A Microchip Technology Company Data Sheet The SST12LP08 is a versatile power amplifier based on the highly-reliable InGaP/ GaAs HBT technology. Easily configured for linear high-power applications with
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SST12LP08
SST12LP08
11b/g
12-contact
DS75073B
SST12LP08-QX6E
12LP08
SST12LP08-QX6E-K
JEP95
"channel estimation"
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12LP17E
Abstract: JEP95 "channel estimation"
Text: PR OP R CO IE NF TAR ID Y E N AN TIA D L 2.4 GHz High-Efficiency, High-Gain Power Amplifier Module SST12LP17E A Microchip Technology Company Data Sheet SST12LP17E is a 2.4 GHz high-efficiency, fully-matched power amplifier module based on the highly-reliable InGaP/GaAs HBT technology. It is designed in compliance with IEEE 802.11b/g/n applications and typically provides 28 dB gain with 28%
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SST12LP17E
SST12LP17E
11b/g/n
21dBm.
DS-75004E
12LP17E
JEP95
"channel estimation"
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Untitled
Abstract: No abstract text available
Text: PR OP R CO IE NF TAR ID Y E N AN TIA D L 4.9-5.9 GHz High-Linearity Power Amplifier SST11CP15E A Microchip Technology Company Data Sheet The SST11CP15E is a versatile power amplifier designed for embedded applications and is based on the highly-reliable InGaP/GaAs HBT technology. It is easily configured for high-linearity, high-efficiency applications over a wide
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SST11CP15E
SST11CP15E
SST11CP1s
DS75025A
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D410PT
Abstract: ALY SMD D1305 ZD1500 OE525 D1605-A-PS PACC-MS005 pico electronics transformers D620 DA1855-PR2
Text: Oscilloscope Probes and Probe Accessories PMS 300 Probe selection guide LeCroy has a wide variety of world class probes and amplifiers to compliment its product line. From the ZS high impedance active probes to the WaveLink differential probing system which offers
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12bit
PP065
PP066
PP065
1-800-5-LeCroy
ProbeCatalog-13july12
D410PT
ALY SMD
D1305
ZD1500
OE525
D1605-A-PS
PACC-MS005
pico electronics transformers
D620
DA1855-PR2
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receiver dwdm samsung
Abstract: No abstract text available
Text: Technical Data Sheet August 2002 PD78D5B OC-192 PIN-TIA-LA Surface-mount Receiver Features 15-pin Surface-mountable Small-form Package Integrated Limiting Amplifier Differential RF-Output G-S-G-S-G type High Sensitivity of –19 dBm High Speed InGaAs-PIN Detector
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PD78D5B
OC-192
15-pin
GR468-CORE
STM-64
10Gbps
100pF)
receiver dwdm samsung
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Lucent apd
Abstract: APD power supply LG1628AXA LG1600 OP11 OP21 STM-16 transimpedance amplifier 7.5 GHz lucent technologies W series op2a
Text: Preliminary Data Sheet January 1998 LG1628AXA SONET/SDH 2.488 Gbits/s Transimpedance Amplifier Features • High data rate: 2.5 Gbits/s ■ High gain: 5.8 kΩ transimpedance ■ Complementary 50 Ω outputs ■ Low noise ■ Ultrawide dynamic range ■ Single –5.2 V ECL power supply
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LG1628AXA
LG1605
LG1600
LG1628AXA
DS97-156FCE
Lucent apd
APD power supply
OP11
OP21
STM-16
transimpedance amplifier 7.5 GHz
lucent technologies W series
op2a
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LMH6612QML
Abstract: 5962R0722701VZA SOIC-10 CQFP-128 DS90LV032QML LM117HQML LM723 LM723 application notes CQFP-48 5962R0722701
Text: Space Solutions Selection Guide national.com/space 2010 Vol. 1 Imaging Solutions Signal Path Solutions Amplifier Solutions Power Management Interface Solutions ELDRS-Free Products Power S/S Solar Array N&S Power Distribution Unit Core Power Pwr Bus #1 Pwr Bus #2
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2SC5998
Abstract: 2SC5998YC
Text: 2SC5998 Silicon NPN Epitaxial High Frequency Medium Power Amplifier REJ03G0169-0100Z Rev.1.00 Apr.20.2004 Features • High Transition Frequency fT = 11 GHz typ. • High gain and Excellent Efficiency Maximum Available Gain MAG = +22 dB typ. at VCE = 3.6 V, IC= 100 mA, f = 500 MHz
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2SC5998
REJ03G0169-0100Z
2SC5998
2SC5998YC
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Untitled
Abstract: No abstract text available
Text: OPA192 OPA2192 OPA4192 www.ti.com SBOS620A – DECEMBER 2013 – REVISED JANUARY 2014 High Voltage, Rail-to-Rail Input/Output, Precision Operational Amplifiers, e-trim Series Check for Samples: OPA192, OPA2192, OPA4192 FEATURES APPLICATIONS • • •
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OPA192
OPA2192
OPA4192
SBOS620A
OPA192,
OPA2192,
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Untitled
Abstract: No abstract text available
Text: OPA192 OPA2192 OPA4192 www.ti.com SBOS620 – DECEMBER 2013 High Voltage, Rail-to-Rail Input/Output, Precision Operational Amplifiers, e-Trim Series Check for Samples: OPA192, OPA2192, OPA4192 FEATURES APPLICATIONS • • • • • • • • • •
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OPA192
OPA2192
OPA4192
SBOS620
OPA192,
OPA2192,
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2763-T
Abstract: No abstract text available
Text: 3 V, WIDEBAND MEDIUM POWER SI MMIC AMPLIFIER FEATURES_ UPC2762T UPC2763T GAIN vs. FREQUENCY • 7 dBm PidB TYPICAL AT 1.9 GHz • LOW VOLTAGE: 3 Volts • WIDE BANDWIDTH: 2.9 GHz at -3 dB UPC2762T • HIGH GAIN: 20 dB at 1.9 GHz (UPC2763T)
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UPC2762T)
UPC2763T)
UPC2762T
UPC2763T
UPC2763T
2763T
UPC2762T-E3
UPC2763T-E3
2763-T
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005-nn
Abstract: C2731GS UP02731GS
Text: SILICON MMIC L-BAND DOWN CONVERTER WITH AGC UP02731GS FUNCTIONAL BLOCK DIAGRAM FEATURES L-BAND OPERATION: 900 MHz to 2.0 GHz — à — ON BOARD OSCILLATOR REG AGC AMPLIFIER LAGC AMP Ops IFA 20 PIN SOP PACKAGE AM IV TAPE AND REEL PACKAGING OPTION AVAILABLE
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UP02731GS
UPC2731
UPC2731GS-E1
2500/Reel
UPC2731GS
34-6393/FAX
005-nn
C2731GS
UP02731GS
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 1.6 GHz DIFFERENTIAL WIDEBAND SILICON MMIC AMPLIFIER UPC2726T FEATURES • H IG H G A IN : 15 dB Typical at 400 MHz • W ID E B A N D F R E Q U E N C Y R E S P O N S E : 1.6 GHz TYP • S IN G L E 5 V S U P P L Y • SUPER SM ALL PACKAGE
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UPC2726T
TheUPC2726T
UPC2726T-E3
34-6393/FAX
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Untitled
Abstract: No abstract text available
Text: LOW NOISE WIDE-BAND AMPLIFIER UPG103B EQUIVALENT CIRCUIT F E A T U R E S _ Vdd • ULTRA WIDE-BAND: 50 MHz to 3 GHz • LOW NOISE: 4 dB TYP at f = 1 GHz . INPUT/OUTPUT IMPEDANCE MATCHED TO 50 O - HERMETICALLY SEALED PACKAGES ASSURE HIGH RELIABILITY
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UPG103B
UPG103B
b4Z75E5
00bbD3b
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Untitled
Abstract: No abstract text available
Text: 3 V, 900 MHz Si MMIC AMPLIFIER UPC2747T NOISE FIGURE AND GAIN vs. FREQUENCY Vcc = 3.0 V, Icc = 5 mA FEATURES LOW VOLTAGE - LOW CURRENT: 5 mA at 3 V LOW POWER CONSUMPTION: 15 m W T Y P SUPER SMALL PACKAGE TAPE AND REEL PACKAGING OPTION AVAILABLE m T> DESCRIPTION
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UPC2747T
UPC2747T-E3
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet January 1998 group Lucent Technologies Bell Labs Innovations LG 1628AX A SONET/SDH 2.488 Gbits/s Transimpedance Amplifier Features • High data rate: 2.5 G bits/s ■ High gain: 5.8 k i l transim pedance ■ C om ple m e ntary 50 i l
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1628AX
LG1628AXA
1628BXA*
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Untitled
Abstract: No abstract text available
Text: NEC LOW NOISE WIDE-BAND AMPLIFIER UPG103A UPG103B UPG103P FEATURES DESCRIPTION • ULTRA WIDE-BAND: 50 MHz to 3 GHz The UPG103 is a GaAs monolithic integrated circuit designed as a low noise amplifier from 50 MHz to 3 GHz. The device is most suitable for the IF stage of microwave communication
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UPG103A
UPG103B
UPG103P
UPG103
UPG103P,
UPG103A,
UPG103B,
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Untitled
Abstract: No abstract text available
Text: SUBSTRATE AMPLIFIERS AFSB SERIES FEATURES • ideal for Gain Blocks and Drivers ; • Ideal Building Blocks for Your Own Design - Low-Noise, Interstage and Output Modules • Available with Low and Medium Power Levels • 25 Mil 5 0 Ohm Microstrip Interface
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AFSB-00102000-45-1
00-09-1OP
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Untitled
Abstract: No abstract text available
Text: SEC MEDIUM POWER WIDE-BAND AMPLIFIER OUTLINE DIMENSIONS FEATURES UPG101B UPG101P Units in mm OUTLINE B08 • ULTRA WIDE BAND: 50 MHz to 3 GHz 1.27±0.1 1.27±0.1 • MEDIUM POWER: + 18 dBm TYP at f = 50 M Hz to 3 GHz 0.4 (LEADS 1,3,5,7) (LEADS 2,4,6,8) 0.6 *
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UPG101B
UPG101P
UPG101
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