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    UPC2762T Search Results

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    California Eastern Laboratories (CEL) UPC2762TB-EVAL

    Amplifier IC Development Tools For UPC2762TB-A
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    Mouser Electronics UPC2762TB-EVAL
    • 1 $110
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    • 10000 $110
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    California Eastern Laboratories (CEL) UPC2762TB-E3-A

    RF Amp Single Power Amp 2.9GHz 3.3V 6-Pin SOT-363 T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Arrow Electronics UPC2762TB-E3-A Cut Strips 1 10 Weeks 1
    • 1 $0.3882
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    Quest Components UPC2762TB-E3-A 1
    • 1 $6
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    UPC2762TB-E3-A 1
    • 1 $6
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    California Eastern Laboratories (CEL) UPC2762T-E3

    IC,MICROWAVE/MILLIMETER WAVE AMPLIFIER,BIPOLAR,TSOP,6PIN,PLASTIC
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    Quest Components UPC2762T-E3 1,407
    • 1 $2.4
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    NEC Electronics Group UPC2762TB-E3-A

    BIPOLAR ANALOG IC, 3V, SUPER MINIMOLD MEDIUM POWER SI MMIC AMPLIFIER, SOT-363 (Also Known As: UPC2762TB)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components UPC2762TB-E3-A 129
    • 1 $6.6
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    UPC2762TB-E3-A 129
    • 1 $6.6
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    UPC2762T Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UPC2762T NEC 3 V, 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS Original PDF
    uPC2762T NEC RF Amplifier, General purpose amplifier, Single channel, Chip, 2900 MHz Typ, SOT-363, 6-Pin Original PDF
    UPC2762TB NEC 3 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS Original PDF
    uPC2762TB NEC RF Amplifier, General purpose amplifier, Single channel, Chip, 3100 MHz, SOT-363, 6-Pin Original PDF
    UPC2762TB-A California Eastern Laboratories RF Amplifiers, RF/IF and RFID, MMIC AMP 3V 2.9GHZ SOT363 Original PDF
    UPC2762TB-E3 California Eastern Laboratories RF Amplifiers, RF/IF and RFID, MMIC AMP 3V 2.9GHZ SOT363 Original PDF
    UPC2762TB-E3 NEC 3 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS Original PDF
    uPC2762TB-E3 NEC 3 V, Super Minimold Silicon MMIC Medium Output Power Amplifier for Mobile Communications Original PDF
    UPC2762TB-E3-A California Eastern Laboratories 3 V, SUPER MINIMOLD MEDIUM POWER SI MMIC AMPLIFIER Original PDF
    UPC2762TB-E3-A California Eastern Laboratories RF Amplifiers, RF/IF and RFID, MMIC AMP 3V 2.9GHZ SOT363 Original PDF
    UPC2762TB-EVAL California Eastern Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD FOR UPC2762TB Original PDF
    UPC2762T-E3 NEC 3 V, wideband medium power silicon MMIC amplifier. Original PDF
    uPC2762T-E3 NEC 3V-BIAS, MEDIUM-POWER HIGH-FREQUENCY SiMMIC AMPLIFIER FOR MOBILE COMMUNICATIONS Original PDF
    UPC2762T-E3 NEC SP Amplifier, 3V, Wideband Medium Power SI MMIC Amplifier, Tape and Reel Original PDF

    UPC2762T Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SOT-363* marking c1z

    Abstract: No abstract text available
    Text: 3 V, SUPER MINIMOLD UPC2762TB MEDIUM POWER SI MMIC AMPLIFIER UPC2763TB GAIN vs. FREQUENCY VCC = 3.0 V, ICC = 27 mA FEATURES • 7 dBm P1dB TYPICAL AT 1.9 GHz 24 • LOW VOLTAGE: 3 Volts 22 • WIDE BANDWIDTH: 2.9 GHz at -3 dB UPC2762T 20 UPC2763T Gain, GS (dB)


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    PDF UPC2762TB UPC2763TB UPC2762T) UPC2763T UPC2762T UPC2763T) OT-363 UPC2763TB SOT-363* marking c1z

    IC 431

    Abstract: 567 tone NEC C 324 C 302 zl IC 567 transistor outline package 3 567 ic UPC2762T UPC2762TB UPC2762TB-E3
    Text: 3 V, SUPER MINIMOLD UPC2762TB MEDIUM POWER SI MMIC AMPLIFIER FEATURES INSERTION POWER GAIN vs. FREQUENCY AND TEMPERATURE • WIDE BANDWIDTH: 2.9 GHz at -3 dB • SUPER SMALL PACKAGE: SOT-363 package • TAPE AND REEL PACKAGING OPTION AVAILABLE DESCRIPTION


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    PDF UPC2762TB OT-363 UPC2762TB UPC2762T, UPC2762TB-E3 24-Hour IC 431 567 tone NEC C 324 C 302 zl IC 567 transistor outline package 3 567 ic UPC2762T UPC2762TB-E3

    UPC2762T

    Abstract: UPC2762T-E3 UPC2763T UPC2763T-E3 63T marking
    Text: 3 V, WIDEBAND MEDIUM POWER SI MMIC AMPLIFIER FEATURES UPC2762T UPC2763T GAIN vs. FREQUENCY VCC = 3.0 V, ICC = 27 mA • 7 dBm P1dB TYPICAL AT 1.9 GHz 24 • LOW VOLTAGE: 3 Volts 22 • WIDE BANDWIDTH: 2.9 GHz at -3 dB UPC2762T 20 UPC2763T Gain, GS (dB) • HIGH GAIN: 20 dB at 1.9 GHz (UPC2763T)


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    PDF UPC2762T UPC2763T UPC2762T) UPC2763T) UPC2762T UPC2763T UPC2762T-E3 UPC2763T-E3 UPC2762T-E3 UPC2763T-E3 63T marking

    Untitled

    Abstract: No abstract text available
    Text: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC2762TB 3 V, SUPER MINIMOLD MEDIUM POWER SI MMIC AMPLIFIER FEATURES • HIGH P1dB: 7 dBm TYP at 1.9 GHz • LOW VOLTAGE: 3.0 V TYP, 2.7 V MIN • WIDE BANDWIDTH: 2.9 GHz at -3 dB • SUPER SMALL PACKAGE: SOT-363 package


    Original
    PDF UPC2762TB OT-363 UPC2762TB UPC2762T, UPC2762TB-E3-A 24-Hour

    UPC2762T

    Abstract: UPC2762T-E3 UPC2763T UPC2763T-E3
    Text: 3 V, WIDEBAND MEDIUM POWER SI MMIC AMPLIFIER FEATURES UPC2762T UPC2763T GAIN vs. FREQUENCY VCC = 3.0 V, ICC = 27 mA • 7 dBm P1dB TYPICAL AT 1.9 GHz 24 • LOW VOLTAGE: 3 Volts 22 • WIDE BANDWIDTH: 2.9 GHz at -3 dB UPC2762T 20 UPC2763T Gain, GS (dB) • HIGH GAIN: 20 dB at 1.9 GHz (UPC2763T)


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    PDF UPC2762T UPC2763T UPC2762T) UPC2763T) UPC2762T UPC2763T UPC2762T-E3 UPC2763T-E3

    UPC2762T

    Abstract: UPC2762TB UPC2762TB-E3-A
    Text: 3 V, SUPER MINIMOLD UPC2762TB MEDIUM POWER SI MMIC AMPLIFIER FEATURES INSERTION POWER GAIN vs. FREQUENCY AND TEMPERATURE • WIDE BANDWIDTH: 2.9 GHz at -3 dB • SUPER SMALL PACKAGE: SOT-363 package • TAPE AND REEL PACKAGING OPTION AVAILABLE DESCRIPTION


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    PDF UPC2762TB OT-363 UPC2762TB UPC2762T, UPC2762T UPC2762TB-E3-A

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF

    mobile phone basic block diagram

    Abstract: PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT
    Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − October 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


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    PDF G0706 PX10020EJ41V0PF mobile phone basic block diagram PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT

    PC3239TB-E3

    Abstract: PC3239TB
    Text: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3239TB 3.3 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The μPC3239TB is a silicon monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.


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    PDF PC3239TB PC3239TB PC3239TB-E3

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


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    PDF R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic

    nec mosfet marked v75

    Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


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    PDF G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77

    2SK2500

    Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
    Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose


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    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


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    PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    ne3511s02 s2p

    Abstract: ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N
    Text: 2007 California Eastern Laboratories HEADQUARTERS U.S. REPS INTERNATIONAL REPS CEL 4590 Patrick Henry Drive Santa Clara CA 95054 Tel: 408 919-2500 Fax: (408) 988-0279 www.cel.com Northwest Disman Bakner (800) 347-3010 Canada BC, Alberta, Saskatchewan


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    PDF 07/2M 847Indiana/Kentucky ne3511s02 s2p ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N

    2763-T

    Abstract: No abstract text available
    Text: 3 V, WIDEBAND MEDIUM POWER SI MMIC AMPLIFIER FEATURES_ UPC2762T UPC2763T GAIN vs. FREQUENCY • 7 dBm PidB TYPICAL AT 1.9 GHz • LOW VOLTAGE: 3 Volts • WIDE BANDWIDTH: 2.9 GHz at -3 dB UPC2762T • HIGH GAIN: 20 dB at 1.9 GHz (UPC2763T)


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    PDF UPC2762T) UPC2763T) UPC2762T UPC2763T UPC2763T 2763T UPC2762T-E3 UPC2763T-E3 2763-T

    PC2762

    Abstract: No abstract text available
    Text: 3 V, SUPER MINIMOLD UPC2762TB MEDIUM POWER SI MMIC AMPLIFIER UPC2763TB FEATURES_ GAIN vs. FREQUENCY • 7 dBm PidB TYPICAL AT 1.9 GHz • LOW VOLTAGE: 3 Volts • WIDE BANDWIDTH: 2.9 GHz at -3 dB UPC2762T • HIGH GAIN: 20 dB at 1.9 GHz (UPC2763T)


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    PDF UPC2762TB UPC2763TB UPC2762T) UPC2763T) OT-363 UPC2763TB PC2762/63TB UPC2762TB-E3 PC2762

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS uPC2762TB5juPC2763TB5juPC2771 TB 3 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS D ESC R IPTIO N The ,uPC2762TB, ,uPC2763TB and ,uPC2771TB are silicon monolithic integrated circuits designed as amplifier for


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    PDF juPC2762TB5 juPC2763TB5 juPC2771 uPC2762TB uPC2763TB uPC2771TB PC2762T,

    Untitled

    Abstract: No abstract text available
    Text: 3 V, WIDEBAND MEDIUM POWER SI MMIC AMPLIFIER FEATURES UPC2762T UPC2763T GAIN vs. FREQUENCY Vcc = 3.0 V, Icc = 27 mA 7 d B m PidB T Y P IC A L A T 1.9 GHz LO W V O LT A G E : 3 Volts W ID E BAN D W ID T H : 2.9 GHz at -3 dB UPC2762T HIGH G AIN : 20 dB at 1.9 GHz (UPC2763T)


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    PDF UPC2762T UPC2763T UPC2762T) UPC2763T) 2762T 2763T UPC2762T-E3 UPC2763T-E3

    63T marking

    Abstract: No abstract text available
    Text: 3 V, WIDEBAND MEDIUM POWER SI MMIC AMPLIFIER FEATURES_ UPC2762T UPC2763T GAIN vs. FREQUENCY • 7 dBm PidB TYPICAL AT 1.9 GHz • LOW VOLTAGE: 3 Volts • WIDE BANDWIDTH: 2.9 GHz at -3 dB UPC2762T • HIGH GAIN: 20 dB at 1.9 GHz (UPC2763T)


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    PDF UPC2762T) UPC2763T) UPC2762T UPC2763T UPC2763T UPC2762T, 63T marking

    t06 93

    Abstract: No abstract text available
    Text: 3 V, WIDEBAND MEDIUM POWER SI MMIC AMPLIFIER FEATURES UPC2762T UPC2763T G AIN vs. FREQUENCY Vcc = 3.0 V, Icc = 27 mA 7 dBm PidB TYPICAL AT 1.9 GHz LOW VOLTAGE: 3 Volts W IDE BANDWIDTH: 2.9 GHz at -3 dB UPC2762T HIGH GAIN: 20 dB at 1.9 GHz (UPC2763T) SUPER SMALL PACKAGE


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    PDF UPC2762T) UPC2763T) UPC2762T UPC2763T UPC2763T str11 UPC2762T-E3 UPC2763T-E3 t06 93

    Untitled

    Abstract: No abstract text available
    Text: 3 V, SUPER MINIMOLD UPC2762TB MEDIUM POWER SI MMIC AMPLIFIER UPC2763TB GAIN vs. FREQUENCY Vcc = 3.0 V, Icc = 27 mA FEATURES_ • 7 dBm PidB TYPICAL AT 1.9 GHz • LOW VOLTAGE: 3 Volts • W IDE BANDWIDTH: 2.9 GHz at -3 dB UPC2762T


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    PDF UPC2762TB UPC2763TB UPC2762T) UPC2763T) OT-363 UPC2763TB UPC2762/ JPC2762TB UPC2762TB-E3

    NEC MARKING

    Abstract: No abstract text available
    Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS UPC2762T, jUPC2763T 3V-BIAS, MEDIUM-POWER HIGH-FREQUENCY SiMMIC AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION ¿¡PC2762T and ¿¡PC2763T are silicon m onolithic integrated circuits designed for the transm ission TX stage


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    PDF jUPC2762T, jUPC2763T PC2762T PC2763T S60-00-1 NEC MARKING

    transistor t06

    Abstract: T06 transistor transistor t06 19 2SC 930 AF t06 93 UPC1678B LT 5219 UPC8103T UPC8108T
    Text: Silicon MMIC Selection Guide WIDEBAND AMPLIFIERS Part Number Typ. Fr*q. Range O 3 dB down MHz ELECTRICAL CHARACTERISTICS1 <f*500 MHz, «XC«frt a t noted T a * 25°C.) NF (dB) Icc Vcc (V) (mA) MIN TYP MAX TYP RLin RLout PSAT (dB) (dBm) (dB) ISOL (dB) MAX


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