7FF000H Search Results

Contextual Info: MX25L6475E MX25L6475E HIGH PERFORMANCE SERIAL FLASH SPECIFICATION P/N: PM1831 1 REV. 1.1, NOV. 11, 2013 MX25L6475E Contents 1. FEATURES. 4

LHF12F16

Abstract: wp 146 LH28F128BFHT-PTTL75A
Contextual Info: PRODUCT SPECIFICATION Integrated Circuits Group LH28F128BFHT-PTTL75A Flash Memory 128M 8Mb x 16 (Model Number: LHF12F16) Spec. Issue Date: June 7, 2004 Spec No: FM046010 LHF12F16 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,

C000H-DFFFH

Abstract: 24Blocks FB0000h-FBFFFFh 9F0000h-9FFFFFh C10000h-C1FFFFh FF4000h-FF5FFFh 8a0000h8affffh
Contextual Info: ADVANCED INFORMATION MX29LW128T/B/U/D 128M-BIT [16M x 8 / 8M x 16] SINGLE VOLTAGE 3V ONLY PAGE MODE FLASH MEMORY FEATURES GENERAL • 8M word x 16 Bit /16M Byte x 8 Bit switchable Power Supply Voltage - VCC=2.7V to 3.6V for read, erase and program operation

M25PX64

Contextual Info: M25PX64 64-Mbit, dual I/O, 4-Kbyte subsector erase, serial Flash memory with 75 MHz SPI bus interface Features • SPI bus compatible serial interface ■ 75 MHz maximum clock frequency ■ 2.7 V to 3.6 V single supply voltage ■ Dual input/output instructions resulting in an

AM29DL640H

Abstract: FTE073 PDL127 PDL127H PDL129 PDL129H cef3 sa2111 AM29DL640
Contextual Info: Am75PDL191BHHa/ Am75PDL193BHHa Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

MX25L6435

Abstract: MX25L6435EM2I-10G MX25L6435E MX25L6435EZ MX25L64 MX25L6435EZNI MX25L6435EZNI-10G
Contextual Info: MX25L6435E MX25L6435E HIGH PERFORMANCE SERIAL FLASH SPECIFICATION P/N: PM1784 1 REV. 1.0, SEP. 06, 2012 MX25L6435E Contents 1. FEATURES. 4

A039h

Abstract: 3A400
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.

Contextual Info: A25LQ64 Series 64M-BIT x1 / x2 / x4 3.3V CMOS MXSMIO (SERIAL MULTI I/O) FLASH MEMORY Document Title 64M-BIT (x1 / x2 / x4) 3 . 3 V CMOS MXSMIO (SERIAL MULTI I/O) FLASH MEMORY Revision History Rev. No. History Issue Date Remark 0.0 Initial issue June 2, 2012

JESD97

Abstract: M29DW128F TSOP56 6C80
Contextual Info: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Feature summary • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read

Contextual Info: White Electronic Designs W78M32V-XBX ADVANCED* 8Mx32 Flash 3.3V Page Mode Simultaneous Read/Write Operations Multi-Chip Package FEATURES Access Times of 90, 100, 120ns Unlock Bypass Program command Packaging • 159 PBGA, 13x22mm – 1.27mm pitch • Reduces overall programming time when issuing

TSOP-20 FOOTPRINT

Abstract: tray datasheet bga 8x9 JESD 95-1, SPP-010 PL032J AM29PDL S29PL-J
Contextual Info: S29PL-J 128/128/64/32 Megabit 8/8/4/2 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control S29PL-J Cover Sheet Data Sheet (Advance Information) Notice to Readers: This document states the current technical specifications regarding the Spansion

10001000XXX

Abstract: PWA with 555 W78M32V-XBX SA139-SA142 SA175-SA178 SA187-SA190 SA163-SA166
Contextual Info: White Electronic Designs W78M32V-XBX 8Mx32 Flash 3.3V Page Mode Simultaneous Read/Write Operation Multi-Chip Package FEATURES Access Times of 70, 90, 100, 120ns Unlock Bypass Program command Packaging • 159 PBGA, 13x22mm – 1.27mm pitch • Reduces overall programming time when issuing

SA158

Abstract: SA214 8adrr
Contextual Info: 63/+63/+ for Multi-Chip Products MCP  0HJDELW  0 [ %LW &026  9ROWRQO\ 6LPXOWDQHRXV 5HDG:ULWH 3DJH 0RGH )ODVK 0HPRU\ Datasheet PRELIMINARY Distinctive Characteristics ² $À6łt…h€r…h†rÃpˆ……r‡ ² ×6ǒƒvphyƇhqi’À‚qrÃpˆ……r‡

K8P2815UQB

Contextual Info: K8P2815UQB FLASH MEMORY 128Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

Contextual Info: Rev. 1.0, Nov 2010 K8S2815ET B E 128Mb E-die NOR FLASH 44FBGA, 7.7x6.2, 0.5mm ball pitch 8M x16, Muxed Burst, Multi Bank datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

JESD97

Abstract: M29DW128F TSOP56 esn 234 D2578 5PWA
Contextual Info: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional)

10001XXXXX

Contextual Info: S29PL-J 128/128/64/32 Megabit 8/8/4/2M x 16-Bit CMOS 3.0 Volt-Only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control S29PL-J Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion

EN25Q128

Abstract: cFeon* SPI Flash EN25 C20F Dual Output fast
Contextual Info: EN25Q128 EN25Q128 128 Megabit Serial Flash Memory with 4Kbyte Uniform Sector FEATURES • Software and Hardware Write Protection: - Write Protect all or portion of memory via software - Enable/Disable protection with WP# pin • Single power supply operation

mx25l6436e

Abstract: MX25L12836E MX25L12836EMI-10G MX25L12836EZNI-10G 8x6mm MX25L6436EM2I-10G MX25L6436
Contextual Info: MX25L6436E MX25L12836E MX25L6436E/MX25L12836E HIGH PERFORMANCE SERIAL FLASH SPECIFICATION P/N: PM1514 REV. 1.3, JUL. 06, 2010 1 MX25L6436E MX25L12836E Contents FEATURES. 5

MX25L6455EXCI-10G

Abstract: MX25L6455E MX25L6455EMI-10G mx25l6455 MX25L12855EXCI-10G MX25L12855EMI-10G MX25L128 MX25L6455EXC PM1467 MX25L12855E
Contextual Info: MX25L6455E MX25L12855E MX25L6455E/MX25L12855E HIGH PERFORMANCE SERIAL FLASH SPECIFICATION P/N: PM1467 REV. 1.3, JUN. 25, 2010 1 MX25L6455E MX25L12855E Contents FEATURES. 5

Contextual Info: S71WSxxxJ based MCPs Stacked Multi-Chip Product MCP 128/64 Megabit (8M/4M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM PRELIMINARY Distinctive Characteristics MCP Features „ „ Power supply voltage of 1.7 to 1.95V

SGA23

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE1.3E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.

HPPB

Abstract: DS05 FPT-56P-M01 MBM29QM12DH MBM29QM12DH60 MBM29QM12DH-60 SGA71 Diode SA97
Contextual Info: MBM29QM12DH -60 データシート 生産終息品 MBM29QM12DH -60 Cover Sheet 本製品は既に終息しておりますので新規設計へのご採用はご遠慮下さいますようお願いします。本データシートは参照及 び履歴目的でのみご利用願います。

S29WS128J-MCP

Abstract: S29WS128J S29WS-J S29WS064J
Contextual Info: S29WS-J 128/64 Megabit 8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory Data Sheet S29WS-J Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information,