cy7c109l-15vi
Abstract: CY7C109L15VI CY7C109L CY7C1009 CY7C109 CY7C1009-15VI cy7c109-15zc CY7C109-15VI
Text: CY7C109 CY7C1009 128K x 8 Static RAM Features • High speed — tAA = 10 ns • Low active power — 1017 mW max., 12 ns • Low CMOS standby power — 55 mW (max.), 4 mW (Low-power version) • 2.0V Data Retention (Low-power version) • Automatic power-down when deselected
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CY7C109
CY7C1009
CY7C109
CY7C1009
cy7c109l-15vi
CY7C109L15VI
CY7C109L
CY7C1009-15VI
cy7c109-15zc
CY7C109-15VI
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ATPA
Abstract: 7130SA100P 24l01 7C263/4-35C 7164S15Y cy9122-25 7133SA35J 7142sa55 7130sa55p cy2149-45c
Text: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2147-35C CY7C147-35C CY7C147-45C CY7C147-35C CY91L22-35C CY7C122-35C CY2147-45C CY2147-35C CY7C148-35C CY7C148-25C+ CY91L22-45C CY93L422AC CY2147-45C CY7C147-45C CY7C148-45C CY7C148-35C
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CY2147-35C
CY7C147-35C
CY7C147-45C
CY91L22-35C
CY7C122-35C
CY2147-45C
CY7C148-35C
CY7C148-25C+
ATPA
7130SA100P
24l01
7C263/4-35C
7164S15Y
cy9122-25
7133SA35J
7142sa55
7130sa55p
cy2149-45c
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CY7C1009
Abstract: CY7C109
Text: fax id: 1047 CY7C109 CY7C1009 128K x 8 Static RAM Features • High speed — tAA = 10 ns • Low active power — 1017 mW max., 12 ns • Low CMOS standby power — 55 mW (max.), 4 mW (Low power version) • 2.0V Data Retention (Low power version) • Automatic power-down when deselected
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CY7C109
CY7C1009
CY7C1009
CY7C109
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81c78
Abstract: 7C291 5962-8515505RX 27PC256-12 PAL164A 8464C 5C6408 72018 39C10B MACH110 cross reference
Text: Product Line Cross Reference CYPRESS 2147-35C 2147-45C 2147-45C 2147-45M+ 2147-55C 2147-55M 2148-35C 2148-35C 2148-35M 2148-45C 2148-45C 2148-45M 2148-45M+ 2148-55C 2148-55C 2148-55M 2149-35C 2149-35C 2149-35M 2149-45C 2149-45M 2149-45M 2149-55C 2149-55C 2149-55M
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2147-35C
2147-45C
2147-45M+
2147-55C
2147-55M
2148-35C
2148-35M
2148-45C
81c78
7C291
5962-8515505RX
27PC256-12
PAL164A
8464C
5C6408
72018
39C10B
MACH110 cross reference
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MSM 6290
Abstract: msm 5562 27c256 intel 62c512 AP 2068 27C512 microchip 62256 57C256 27C512 SGS-THOMSON 27C512-150
Text: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 2147-35C 27S07AC 7C190-25C 7C171A-35C 7C171A-25C 2147-45C 7C147-45C 27S07AM 7C190-25M 7C171A-45M 7C171A-35M+ 2147-45M+
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2147-35C
7C147-35C
27S03M
54S189M
7C170A-45M
7C170A-35M
2147-45C
27S07AC
7C190-25C
MSM 6290
msm 5562
27c256 intel
62c512
AP 2068
27C512 microchip
62256
57C256
27C512 SGS-THOMSON
27C512-150
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CY7C1009
Abstract: CY7C109 7C109-25 cypress cy7c109-20zi
Text: CY7C109 CY7C1009 128K x 8 Static RAM Features • High speed — tAA = 10 ns • Low active power — 1017 mW max., 12 ns • Low CMOS standby power — 55 mW (max.), 4 mW (Low power version) • 2.0V Data Retention (Low power version) • Automatic power-down when deselected
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CY7C109
CY7C1009
CY7C1009
CY7C109
7C109-25
cypress cy7c109-20zi
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27HC642
Abstract: 39C10B PAL22V10APC CY2254SC-1 7132SA70 93L422AM 7024S15 7130SA25 7C198-45C 7006S
Text: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 2147-35C 27S07AC 7C190-25C 7C171A-35C 7C171A-25C 2147-45C 7C147-45C 27S07AM 7C190-25M 7C171A-45M 7C171A-35M+ 2147-45M+
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2147-35C
7C147-35C
27S03M
54S189M
7C170A-45M
7C170A-35M
2147-45C
27S07AC
7C190-25C
27HC642
39C10B
PAL22V10APC
CY2254SC-1
7132SA70
93L422AM
7024S15
7130SA25
7C198-45C
7006S
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San Ace 40
Abstract: CY7C1009 CY7C109
Text: 1CY 7C10 9 CY7C1009 CY7C109 128K x 8 Static RAM Features • High speed — tAA = 10 ns • Low active power — 853 mW max., 15 ns • Low CMOS standby power — 55 mW (max.), 4 mW (Low power version) • 2.0V Data Retention (Low power version) • Automatic power-down when deselected
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CY7C1009
CY7C109
San Ace 40
CY7C1009
CY7C109
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CY7C1009
Abstract: CY7C109
Text: 009 CY7C109 CY7C1009 128K x 8 Static RAM Features • High speed — tAA = 10 ns • Low active power — 1017 mW max., 12 ns • Low CMOS standby power — 55 mW (max.), 4 mW (Low power version) • 2.0V Data Retention (Low power version) • Automatic power-down when deselected
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CY7C109
CY7C1009
CY7C109,
CY7C1009
CY7C109
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CY7C109
Abstract: CY7C109-15PC CY7C109-15VC CY7C109-20PC CY7C109-20VC 7C10925
Text: CY7C109 128K x 8 Static RAM Features Functional Description D The CY7C109 is a highĆperformance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable CE1 , an active HIGH chip enable (CE2), an active
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CY7C109
CY7C109
CY7C109-15PC
CY7C109-15VC
CY7C109-20PC
CY7C109-20VC
7C10925
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5962L0053605VYC
Abstract: 5962-9069204QXA ATMEL 302 24C16 UT9Q512E-20YCC MOH0268D UT54ACS164245SEIUCCR Z085810 5962-9762101Q2A UT28F256QLET-45UCC 5962R0250401KXA
Text: NOT MEASUREMENT SENSITIVE MIL-HDBK-103AJ 19 SEPTEMBER 2011 SUPERSEDING MIL-HDBK-103AH 28 MARCH 2011 DEPARTMENT OF DEFENSE HANDBOOK LIST OF STANDARD MICROCIRCUIT DRAWINGS This handbook is for guidance only. Do not cite this document as a requirement. AMSC N/A
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MIL-HDBK-103AJ
MIL-HDBK-103AH
MIL-HDBK-103AJ
5962L0053605VYC
5962-9069204QXA
ATMEL 302 24C16
UT9Q512E-20YCC
MOH0268D
UT54ACS164245SEIUCCR
Z085810
5962-9762101Q2A
UT28F256QLET-45UCC
5962R0250401KXA
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Untitled
Abstract: No abstract text available
Text: fax id: 1047 CY7C109 CY7C1009 ^C YPR ESS 128K x 8 Static RAM active HIGH chip enable CE 2 , an active LOW output enable (OE), and three-state drivers. Writing to the device is accom plished by taking chip enable one (CE-|) and write enable (WE) inputs LOW and chip enable two (CE 2 ) input HIGH. Data on
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CY7C109
CY7C1009
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G 1009l
Abstract: CY7C1009 CY7C109
Text: fax id: 1047 CY7C109 CY7C1009 CYPRESS 128K x 8 Static RAM Features active HIG H chip enable C E 2 , an active LO W ou tput enable (OE), and three -state drivers. W riting to the device is a cco m plished by takin g chip enable one (CE-|) and w rite enable (WE)
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CY7C109
CY7C1009
CY7C1009
G 1009l
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Untitled
Abstract: No abstract text available
Text: C Y 7 C 1 0 0 9 C Y 7 C 1 0 9 CYPRESS 128K 8 Static RAM active HIGH chip enable CE2 , an active LOW output enable (OE), and three-state drivers. Writing to the device is accom plished by taking chip enable one (CE-|) and write enable (WE) inputs LOW and chip enable two (CE2) input HIGH. Data on
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CY7C1009-15VC
Abstract: No abstract text available
Text: C Y 7 C 1 0 0 9 C Y 7 C 1 0 9 P Yi. PX :V «*1 128K 8 Static RAM active HIGH chip enable CE2 , an active LOW output enable (UE), and three-state drivers. Writing to the device is accom plished by taking chip enable one (CEi) and write enable (WE) inputs LOW and chip enable two (CE2) input HIGH. Data on
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7C109
Abstract: CY7C109 ddgt A14C C106 cy7c109-45dmb cy7c109-35dmb
Text: CYPRESS SEMICONDUCTOR 4 bE WM 'cSEMICONDUCTOR y p re ss D a ES&SbbB DG0b30b 1 E1CYP CY7C108 CY7C109 PRELIMINARY 131,072 x 8 Static R/W RAM Features Functional Description • H ighspeed — U a = 25 ns • CMOS for optimum speed/power • Low active power
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00Gb30b
CY7C108
CY7C109
TheCY7C108
CY7C109
p9-45DC
CY7C109-45PC
CY7C109-45VC
CY7C109-45DMB
GG0b312
7C109
ddgt
A14C
C106
cy7c109-35dmb
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7C109-35
Abstract: 7C108
Text: K 'ß CY7C108 CY7C109 AD VAN CED IN F O R M A TIO N SEMICONDUCTOR 131,072 x 8 Static R/W RAM Features F unctional D escription • High speed T h e CY7C108 and CY7C109 are high-per form ance C M O S static R A M s organized as 131,072 words by 8 bits. Easy m em ory expansion is provided by an active L O W chip
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CY7C108
CY7C109
8-00140-A
7C109-35
7C108
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