7B185 Search Results

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Contextual Info: 7B185 CY7B186 CYPRESS SEMICONDUCTOR 8,192 x 8 Static RAM Features Functional Description • BiCMOS for optimum speed/power T h e C Y 7 B 1 8 5 a n d C Y 7 B 1 8 6 a re h ig h -p e r­ fo rm a n c e B iC M O S s ta tic R A M s o rg a ­ n iz ed as 8,192 w o rd s b y 8 bits. T h e s e

CY7B185

Abstract: cy7b185-12pc cy7b185-15pc 624a2 A10C CY7B185-10DC CY7B185-9VC i10121
Contextual Info: 7B185 CYPRESS SEMICONDUCTOR Functional Description BiCMOS for optimum speed/power Ultra high speed — 9 ns Low active power — 750 mW Low standby power — 250 mW TTL-compatible inputs and outputs Capable o f w ithstanding greater than 2001V electrostatic discharge

CY7B185

Abstract: cy7b185-12pc CY7b185-10vc cy7b185-12dmb CY7B185-12VC CY7B185-12DC CY7B186 B1852 7B185 CY7B185-15
Contextual Info: r^ y p p rcç 'W 7B185 CY7B186 8K x 8 Static RAM = SEMICONDUCTOR Features • BiCMOS for optimum speed/power • Ultra high speed — 9 ns • Low active power — 750 mW • Low standby power — 250 mW • TTL-compatible inputs and outputs • Capable of withstanding greater than

CY7B185-12PC

Contextual Info: 7B185 CY7B186 _ PR ELIM IN AR Y SEMICONDUCTOR 8,192 x 8 Static RAM Features Functional Description • BiCM OS for optim um speed/power T he 7B185 and CY7B186 are high-performance BiCM OS static R A M s orga­ nized as 8,192 words by 8 bits. These

Contextual Info: 7B185 CY7B186 rvp p rcQ — 8K x 8 Static RAM SEMICONDUCTOR Features Functional Description • BiCMOS for optimum speed/power • Ultra high speed — 9 ns • Low active power — 750 mW • Low standby power — 250 mW • TTL-compatible inputs and outputs

Contextual Info: 7B185 CYPRESS SEMICONDUCTOR Features Functional Description • BiCMOS for optimum speed/power T h e 7B185 is a h ig h -p e rfo rm a n c e B iC M O S static R A M organized as 8K w ords by 8 bits. T hese R A M s are devel­ o p ed by A spen S em iconductor C o rp o ra ­

7B185

Contextual Info: 7B185 CY7B186 CYPRESS SEMICONDUCTOR 8K x 8 Static RAM Features Functional Description • BiCMOS for optimum speed/power • U ltra high speed — 9 ns • Low active power — 750 mW • Low standby power — 250 mW • TTL-compatible inputs and outputs

5962L0053605VYC

Abstract: 5962-9069204QXA ATMEL 302 24C16 UT9Q512E-20YCC MOH0268D UT54ACS164245SEIUCCR Z085810 5962-9762101Q2A UT28F256QLET-45UCC 5962R0250401KXA
Contextual Info: NOT MEASUREMENT SENSITIVE MIL-HDBK-103AJ 19 SEPTEMBER 2011 SUPERSEDING MIL-HDBK-103AH 28 MARCH 2011 DEPARTMENT OF DEFENSE HANDBOOK LIST OF STANDARD MICROCIRCUIT DRAWINGS This handbook is for guidance only. Do not cite this document as a requirement. AMSC N/A

CY7B185

Abstract: CY7B185-15LMB
Contextual Info: _ 7B185 SEMICONDUCTOR 8K x 8 Static RAM Features Functional Description • BiCMOS for optimum speed/power • Ultra high speed — 9 ns • Low active power — 750 mW • Low standby power — 250 mW • TTL-compatible inputs and outputs