75S4 Search Results

MHQ3725

Abstract: D2072 MHQ3724
Contextual Info: MOTOROLA SC XSTRS/R F 12E D | QUAD DUAL-IN LINE NPN HERMETIC SILICON MEMORY DRIVER TRANSISTORS . . . designed for high-current, high-speed switching, ferrite core and plated w ire m em ory drivers, and M O S translator applications. t3t.75S4 00flt>S7ä T |

TO-236-AA

Contextual Info: 3>F|b3L.75S4 O D Û S Q h S S M O T O R O L A SC -CXSTRS/R F> 6367254 » M OT O RO L A S C XSTRS/R ' 96D 8 2 0 6 5 . _ F * T-31-15 M À XIM U M RATINGS Sym bol Value Unit Collector-Emitter Voltage VcEO 30 Vdc Collector-Base Voltage VCBO 40 Vdc Emitter-Base Voltage

TDIY

Abstract: 2C3767HV 3268
Contextual Info: MbE » • b3t.75S4 O D ^ ta MOTOROLA SC T MMOTb XSTRS/R 1-3 3 '& { F M O TO R O LA SEMICONDUCTOR! T E C H N IC A L DATA 2C3767HV Chip NPN Silicon Medium-Power Transistor & bÊÈS& J }« M if iiiii * . Discrete .for use in driver circuits, switches, and amplifier applications.

2N2946A

Abstract: 2N2945A 2945A 400D 376 motorola 2N2945 K/2N2945A-T57
Contextual Info: MOTOROLA SC XSTRS/R F 12E D | t3f c,75S4 Rating Collector-Base Voltage Emitter-Base Voltage Sym bol 2N2945A 2N2946A Unit Veco 20 35 Vdc V cB O 25 40 Vdc vebo 25 40 Vdc Collector Current — Continuous ic 100 mAdc Total Device Dissipation @ T/\ = 25°C Derate above 25°C

MMBT930

Abstract: marking GB SOT 23
Contextual Info: MOTOROLA r SC -CXSTRS/R 6 3 6 7 2 5 4 MOTOROLA S C - - Tb»F|b3t,75S4 F> DQflEG31 0 96 D CXS TRS / R F 82031 I D T - i- J -fjr MAXIMUM RATINGS Sym bol V alu e Unit Collector-Emitter Voltage R ating v CEO 45 V dc Collector-Base Voltage VCBO 45 V dc Em itter-Base Voltage

6PEV

Contextual Info: t A □ IA OASH CAGLES NO ACCOMMODATED -7 T R C -5 0 -2 /T R C -7 5 -2 -0 8 2 2 7 , BELOEN T W C -7 0 -2 . R G -1 0 B , -9 TW C-1 2 4 -2 -1 0 75S4E, W .E .C O ., R G -2 2 -n 7fJ0A, W .E .C O . -1 2 1 6PEV L, W .E .C D . -1 3 T R F -5 9 , TIMES - 1 3 A 6 2 3 2 . BELOEN

75S4

Contextual Info: M O T O R O L A SC Í X S T R S / R F3- 6367254 Tb ßF|bBt.75S4 DDflnfll b 960 81989 MOTOROLA SC C.XSTRS/R^ F . - D ! _ T - M A X IM U M RATINGS Symbol Value Unit Collector-Emitter Voltage Rating v CEO 35 Vdc Collector-Base Voltage VcBO

bus48

Abstract: t335 motorola bus48
Contextual Info: "Tb MO TOR OLA SC ÍXSTRS/ R Fi 6367254 MOTOROLA SC DE |b3t.75S4 00Û073S 96D <XSTRS/R F 80735 MOTOROLA SEMICONDUCTOR TECHNICAL DATA SWITCHMODE II* SERIES NPN SILICON POWER TRANSISTORS 15 A M P E R E S NPN SILICON POWER TRAN SISTO RS 400 and 450 VOLTS BVCEO)

MG400A2U120LR

Abstract: MG15BZ100 MG50BZ100
Contextual Info: MOT OROL A SC XSTRS/R F 4bE D • b3fe.75S4 00T3S00 7 moTt. 7Z3?'-3I Multiple Chip Products (continued) 1 C TMOS Table 12— ICePAK Products (continued) CASE 806A-01 The MPM6002 advanced high voltage Insulated Gate Bipolar Transistor (IGBT) Half Bridge with Free Wheeling Diodes in the

Contextual Info: M O T O R O L A SC -CXSTRS/R F> 6367254 M OTO RO LA SC Tb CXSTRS/R D E | b3t,75S4 OOflSDID F> 96D 8 2 0 1 0 . i T-21-ZS M A X I M U M R A T IN G S R ating Drain-Gate V oltage R everse G ate-Source Voltage Forw ard Gate Current Sym bol V alue Unit Vdg 25 V dc

BD806

Abstract: TRANSISTOR C 557 B B0806 TRANSISTOR bd 147 BD808 b0808 ADC 808 adc 809 T557 221A-04
Contextual Info: M OT OR OL A SC X S TR S /R 1EE D I F b3fci7254 QDâM7ti3 b | MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC HIGH POWER SILICON PNP TRANSISTOR . . . designed for use in high power audio amplifiers complementary or quasi complementary circuits. utilizing 10 AMPERE

Densei-Lambda PH50S 280-12

Abstract: POWER 12v 28V 3A 60W DC-DC ph150s 48-24 Densei-Lambda PH75S PH75F48-12 Densei-Lambda* PH50S 48-12 Densei-Lambda PH50S converter DC/DC 400V 10A Densei-Lambda PH50S 280 PH100S 280-48
Contextual Info: UMBDAA • I hI O C D IC O DENSEI-LAMBDA Single output DC-DC converter 5 0 W - 300W I l-O C n lC O ■ Model name PH 300 F 280-5 -1 - T 1 - T —I—Output power 1 Nominal input voltage I N am e of series Function Full function S: Simple function

Densei-Lambda PH75S

Abstract: ph7s PH75F280-12 Densei ph50s280-24 ph59 power supply 150w 24v PH100F24-24 ph75 10 PH100F24-5 PH100S48-3.3
Contextual Info: DU lAMBDAA O C D IC O DENSEI-LAMBDA Single output DC-DC converter • n "SERI ES 5ow~3oow ■ Model name PH 300 F 280-5 I Output power T N o m in a l input voltaqeT Function I F: Ful1 function Nominal output S: Simple function voltage Name of series ■ Features

2N3946 MOTOROLA

Abstract: 2N3947 2N3946 2N3946 equivalent 2N3947 MOTOROLA
Contextual Info: M OTOROLA SC XSTRS/R F 12E D | b3b?254 G0flfc.3fl0 G | M A X IM U M R A T IN G S Symbol Value Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage Rating Unit Ve b o 6.0 Vdc Collector Current — Continuous ic 200 mAdc

DA 3807 transistor

Abstract: transistor da 3807 J13071 BJW transistor saa 1074 AN-222 MJ13070 MJ13071 S030G 81073
Contextual Info: motorola f sc -c x s t r s / r fj - 6367254 MOTOROLA D[T|t,3b7ES4 0 D fiID? 0 4 Scf XSTRS/R F 9 6 D 8 10 7 0 MOTOROLA MJ13070 MJ13071 SEM ICONDUCTOR TECHNICAL DATA - iQ 9 S f e I ) e s i } i n e r ’ s ' D a t a D T ' ?-/3 S h e e t 5 AM PERE S W I T C H M O D E II S E R I E S

D10N2

Abstract: marking dC
Contextual Info: Order this data sheet by MRF10070H/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF10070H* Microwave Pulse Power Transistor 70 Watts Peak NPN 1025-1150 MHz Designed for 1025-1150 MHz pulse common base amplifiers. C P liO • Guaranteed Performance at 1090 MHz - Output Power = 70 Watts Peak

Q1129

Abstract: Q 1129 FETS
Contextual Info: MOTOROLA SC XSTRS/R F 15E D | fa3b7a5H OOflbbOa 3 | T 1^ 1~Z? MQ1129 ' CASE 607-04, STYLE t M AXIM UM RATINGS '14 Symbol Value Unit Collector-Emitter Voltage Vceo 30 Vdc Collector-Base Voltage vCBO 60 Vdc Emitter-Base Voltage Veso 5.0 Vdc 'c 500 mAdc Rating

DIODE 40c 0649

Abstract: MJ100B3D45
Contextual Info: M O T O R O L A SC SbE D XSTRS/R F O rder th is data sheet by MJ100B3D45/D b 3 b 7 E S 4 QD^lEflt. D MOTOROLA SEMICONDUCTOR TECHNICAL DATA m € NPN Silicon Power Transistor Module Energy M anagem ent Series DUAL DARLINGTON POWER TRANSISTOR 100 AMPERES 450 VOLTS

yg sot23

Abstract: 82007 MMBF5484 MARKING YG SOT23 marking GIF 100-C 25CC C96d MMBF5457 MMBF5459
Contextual Info: motorola sc -c x s t r s / r 6367254 f Tb > MO TO RO LA SC XSTRS/R DElb3b7254 96D F I 82007 T M A X IM U M R A T IN G S Symbol Value Unit Drain-Source Voltage VD S 25 Vdc Drain-Gate Voltage Vd g 25 Vdc VGS(r) 25 Vdc !G 10 mAdc Symbol Max Unit PD 225 mW 1.8

8P08

Abstract: mtp8p08 MTP8P10 a043 221A-04 AN569 MTM8P08 MTM8P10 8P10 motorola
Contextual Info: MOTOROLA SC XSTRS/R im e F 'd I k3L?asM MOTOROLA □ a cì o a a 3 ? | - r - 3 m SEM IC O N D U C T O R TECHNICAL DATA M TM 8P08 M TM 8P10 MTP8P08 MTP8P10 Designer's Data Sheet P o w e r Field E ffe c t T ra n sisto r P-Channel Enhancem ent-M ode S ilic o n G ate T M O S

PN3207

Abstract: PH50S PKT150F PH50S24-24 ph150f PH150S48-24 lambda ph50 temperature lambda ph50s24-5 PH150S110-24 PH100S280-5
Contextual Info: PH Series Higfe power «inverters Wide Range Input Full Function Modules. Lambda’s Full Function High Density Output Adjustment Capability Simple Or Full Function Modules Remote O n/off PH Series modules achieve 5 million hours MTBF, Active single wire current sharing coupled with a

Contextual Info: M O T O R O L A SC -CXSTRS/R F> 1 6367254 MOTOROLA SC DE|b3ti7254 XSTRS/R 96D 8 2 4 7 5 _ T ~ F □DÔ247T S | D ^ ? - 2 - 7 MAXIM UM RATINGS Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage

IR 92 0151

Abstract: transistor BU 109 bu326 t 326 Transistor transistor BU 184
Contextual Info: MO TO RO LA SC XSTRS/R F 12E D | b3b?2S4 QGâMflQâ 2 | MOTOROLA SEMICONDUCTOR TECHNICAL DATA 6 AM PERES HIGH VO LTAGE NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS . . . Designed far use in the switch-mode power supplies of colour television receivers.

CAP M5E

Abstract: M559 M559-02 M559-01
Contextual Info: M OT OR OL A 6367254 SC -CXSTRS/R MOTOROLA SC Fï Tt. XSTRS/R D Ë J b3b?2S4 ODÖ2414 96D 8 2 4 1 4 F 4 J ~ D'T A 3 ~ ^ b M A X IM U M RATINGS Symbol Value U nit v CEO 50 Vdc Collector-Base Voltage VCB 75 Vdc Emitter-Base Voltage VEB 6.0 Vdc 'C 800 mAdc