mt5089
Abstract: IN3035
Text: □3 PLESSEY SEMICOND/DISCRETE DE 72E0533 / -£ > < ? -/7 FM M T5088 FM M T5089 NPN silicon planar small signal transistors A B S O L U T E M A X I M U M R A T IN G S Param eter Sym bol FM M T5088 FM M T5089 C o lle c to r V o lta g e V C BO 35 30 C o lle cto r-E m itte r V o lta g e
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72E0533
T5088
T5089
T5089
mt5089
IN3035
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scr 219
Abstract: ZVN3210L PLESSEY SP
Text: PLESSEY SEMICOND/DISCRETE 7220533 PLESSEY ~T5 dF | 7 S S 0 5 3 3 SEMICOND/ D ISCRETE N-channel enhancement mode vertical DMOS FET 95D 0DDS711 0 | ~ 0 5 7 1 1 ZVN3210 FEATURES • C o m p a c t ge om etry • F a s t s w itc h in g sp e ed s • N o se c o n d a ry b re a k d o w n
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0DDS711
ZVN3210
ZVN3210L*
0S715
QDDS71b
T-39-11
G-218
72E0533
scr 219
ZVN3210L
PLESSEY SP
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G-329
Abstract: ZVP3306 ZVP3306A
Text: PLESSEY SEMICOND/DISCRETE 7220533 PLESSEY TS SEMICOND/DISCRETE ZVP2220 DE I 75EDS33 ODOSflEE 1 9SD 05822 T '3 7 \ 2 5 G-324 PLESSEY SEMICOND/DISCRETE 7220533 PLESSEY TS SEMICOND/DISCRETE G-325 d F | 7S2[]S33 QOaSflES □ |~~ 95D 05 823 D PLESSEY SEMICOND/DISCRETE
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75EDS33
ZVP2220
G-324
G-325
7EE0533
G-326
7220S33
-r-31-25'
ZVP3306
G-329
ZVP3306
ZVP3306A
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ZVP0120L
Abstract: ZVP P-channel
Text: PLESSEY s e n i c o n d / d i s c r e t e TS 7220533 P L E S S EY S E M I C O N D /D ISCRETE D F § ? a E D S 3 3 0 0 0 S 7 4 CJ 3 95D 0 5 7 4 9 D T - J7-zr P-channel enhancement mode vertical DMOS FET ZVP0120 FEATURES • Compact geometry • Fast sw itching speeds
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000S74C
ZVP0120
D00S7S3
0D05754
G-256
G-257
G-258
ZVP0120L
ZVP P-channel
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ZVP2120
Abstract: plessey ZVP P-channel
Text: PLESSEY SEMICOND/DISCRETE 7220533 PLESSEY 7s SEMICOND/DISCRETE ZVP2120 FEATURES Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance • Low current drive • Ease of paralleling
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ZVP2120
ZVP2120A
ZVP2120B
ZVP2120L
-20COND/DISCRETE
G-298
G-299
72a0533
ZVP2120
plessey
ZVP P-channel
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plessey
Abstract: BS107P
Text: TS PLESSEY SEMICOND/DISCRETE 7220533 PLESSEY SEMICOND/DISCRETE DE~| 72ED533 GODSSDl D 95D 05501 D T - J S’~ 1 5* N-channel enhancement mode vertical DMOS FET BS107P FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability
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72ED533
BS107P
on20533
550S33
00DSSQ5
72SG533
7EEG533
plessey
BS107P
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BSS70R
Abstract: BSS69 bss69r
Text: 7:p l e s s e y 03 s e m i c o n d /d i s c r e t e PIMP silicon planar medium power switching transistors A B SO LU T E M AXIM UM RATIN G S Parameter BSS69 BSS70 Symbol Collector-Base Voltage BSS69 & BSS70 VCBO VCEO VEBO Collector-Emitter Voltage Emitter-Base Voltage
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7220S33
BSS69
BSS70
BSS69
BSS70
000tt
-----------------------------------BSS69
BSS70R
bss69r
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