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    71C4400Bj

    Abstract: No abstract text available
    Text: Rev 0. GoldStar GOLDSTAR ELECTRON CO., LTD. GMM781000BN S-60/70/80 1,048,576 WORDS x 8 BIT CMOS DYNAMIC RAM MODULE Description Features The GM M 781000BN S is a 1M x 8 bits Dynamic RAM Module, mounted 2 pieces of 4M bit DRAM GM 71C4400BJ, 1M x 4 sealed in 2 pin


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    PDF GMM781000BN S-60/70/80 781000BN 71C4400BJ, 4400BJ 0003fl2fl GMM781000BNS M0267S7 71C4400Bj

    4170A

    Abstract: mask ROM Dynamic RAM 4M x 8 71C4400B GM23C410 64K x 8 BIT DYNAMIC RAM Dynamic RAM 64K x 1 static+ram+32kx8 STATIC+RAM+6264
    Text: PRODUCT INDEX DRAM GM71C1000B/BL GM71C4256B/BL GM71C4100B/BL GM71C4100C/CL GM 71C41OOD/DL GM 71C4400B/BL GM 71C4400C/CL GM 71C4400D/DL GM71C S 4800A/AL GM71C(S)4260A/AL GM71C(S)4270A/AL GM 71C(S)4170A/AL GM71C16100A GM71C16400A GM71C17400A GM 71C(S) 16160 A/AL


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    PDF GM71C1000B/BL GM71C4256B/BL GM71C4100B/BL GM71C4100C/CL 71C41OOD/DL 71C4400B/BL 71C4400C/CL 71C4400D/DL GM71C 800A/AL 4170A mask ROM Dynamic RAM 4M x 8 71C4400B GM23C410 64K x 8 BIT DYNAMIC RAM Dynamic RAM 64K x 1 static+ram+32kx8 STATIC+RAM+6264

    71C4400

    Abstract: GMM791100BNS70 71C4400Bj
    Text: » G M M 791 lOOBNS-60/70/80 1,048,570 w o r d s x 9 b i t LG Semicon Co.,Ltd. CMOS DYNAMIC RAM MODULE Features Description The GM M 791100BNS is an 1M x 9 bits Dynamic RAM Module which is assembled 2 pieces of 4M bit DRAM G M 71C4400BJ, 1M x 4 sealed in 20 pin SOJ package and 1M bit


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    PDF lOOBNS-60/70/80 791100BNS 71C4400BJ, GMM7911OOBNS GMM791100BNS GMM7911OOBNS 71C4400 GMM791100BNS70 71C4400Bj

    gm71c4400b

    Abstract: No abstract text available
    Text: 71C4400B/BL GoldStar 1,048,576 WORDS x 4 BIT GOLDSTAR ELECTRON CO., LTD. CMOS DYNAMIC RAM Description Features • • • • T h e G M 7 1 C 4 4 0 0 B /B L is t h e n e w g e n e r a t i o n d y ­ n a m ic RAM o rg a n iz e d 1 ,0 4 8 ,5 7 6 x 4 G M 7 1 C 4 4 0 0 B /B L h a s r e a l iz e d


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    PDF GM71C4400B/BL GMM71C4100BR/BLR GM71C4400BT/BLT 031MIN gm71c4400b

    GM71C4400B

    Abstract: GM71C4400 gm71c4400bz CM71C4400
    Text: 71C4400B/BL LG Semicon Co.,Ltd. 1,048,576 W O R D S x 4B IT C M O S D Y N A M IC R A M Description Features T he G M 7 1C 4400B /B L is the new generation dynam ic R A M organized 1,048,576 x 4 bit. G M 71C 4400B /B L has realized higher density, higher


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    PDF GM71C4400B/BL 4400B 20pin GM71C4400B GM71C4400 gm71c4400bz CM71C4400

    GM71C4400BJ70

    Abstract: GM71C4400BLT70 GM71C4100CJ60 GM76C256BLL-70 GM76C8128ALLFW70 GM71C4100CJ70 1gm7 GM76C256BLL70 GMM7362000BSG-70 76C256
    Text: MEMORY LINE-UP 1. DRAM 60ns IM IM xl GM 71C1000B-70 G M 7IC1000BJ-60 GM7 ] C 1OOOBJ-70 G M 7 1C 1OOOBJ-80 GM 71C1000BZ-60 GM 71C1000BZ-70 - 1 GM 71C1000BZ-80 GM71C1000HI,-60 > - ŒGM 71C1000BI.-70 M 71C1000BL-80 GM71C1000BLZ-60 GM71CIOO0BI.Z-70 G M 7IC I000H iy.-80


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    PDF 71C1000B-70 1OOOBJ-70 71C1000BZ-70 71C1000B-80 1OOOBJ-80 71C1000BZ-80 71C1000BL-80 1000B I000H GM71C1000B-60 GM71C4400BJ70 GM71C4400BLT70 GM71C4100CJ60 GM76C256BLL-70 GM76C8128ALLFW70 GM71C4100CJ70 1gm7 GM76C256BLL70 GMM7362000BSG-70 76C256