NEC D2732
Abstract: 41C1000 41256 81c4256 6264 SRAM 44256 dram NEC 2732 nec 4217400 814400 Texas Instruments eprom 2732
Text: New Page 1 DRAM ORGANIZATION/ DENSITY FUJISTU GOLDSTAR HITACHI HYNDAI MB GM HM HY 256K x 1 256K 81256 71C256 51256 MICRON MT 53C256 1256 MITSUBISHI M5M 4256 1M x 1(1M) 81C1000 71C1000 511000 531000 4C1024 41000 256K x 4(1M) 81C4256 71C4256 514256 534256 4C4256
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71C256
53C256
81C1000
71C1000
4C1024
81C4256
71C4256
4C4256
71C4400
4C4001
NEC D2732
41C1000
41256
6264 SRAM
44256 dram
NEC 2732
nec 4217400
814400
Texas Instruments eprom 2732
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71C4400A
Abstract: No abstract text available
Text: GOLDSTAR TECHNOLOGY IN C/ 47E D • 402Ö7S7 GQ03455 ö «GST T-M-Z3-tZ GoldStar GM 71C4400A/AL 1,048,576 WORDSx 4 BIT CMOS DYNAMIC RAM Description Features The 71C4400A/AL is the new generation dy namic RAM organized 1,048,576 x 4 Bits. 71C4400A/AL has realized higher density, higher per
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GQ03455
71C4400A/AL
GM71C4400A/AL
300-mil
20-pin
400-mil
71C4400A
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71C4400Bj
Abstract: No abstract text available
Text: Rev 0. GoldStar GOLDSTAR ELECTRON CO., LTD. GMM781000BN S-60/70/80 1,048,576 WORDS x 8 BIT CMOS DYNAMIC RAM MODULE Description Features The GM M 781000BN S is a 1M x 8 bits Dynamic RAM Module, mounted 2 pieces of 4M bit DRAM GM 71C4400BJ, 1M x 4 sealed in 2 pin
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GMM781000BN
S-60/70/80
781000BN
71C4400BJ,
4400BJ
0003fl2fl
GMM781000BNS
M0267S7
71C4400Bj
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1GM7
Abstract: GM7IC clj60 clts GM71V64400 gm71c 65T6 L7800CT GM71C4403C
Text: MEMORY LINE-UP 1. DRAM I 4M 50ns 60ns l4Mxl •70 G M 71C4100CJ/CLJ-60 |— GM71C4100CJ- GM 7ÌC41000EJ-60 |— |G M 71C 410 q1 I 70 GM7IC4400CJ/CLJ-60 |— | 71C4400CJ-70 GM71C4403CJ/CLJ-60 |—\ OM71C4403CJ-70 GM 71C4400EJ-60 |— | 71C4400EJ-70 G M 71C4403E J-60
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71C4100CJ/CLJ-60
C41000EJ-60
GM71C4100CJ-
GM7IC4400CJ/CLJ-60
GM71C4403CJ/CLJ-60
71C4400EJ-60
71C4403E
GM71C4400CJ-70
OM71C4403CJ-70
GM71C4400EJ-70
1GM7
GM7IC
clj60
clts
GM71V64400
gm71c
65T6
L7800CT
GM71C4403C
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4170A
Abstract: mask ROM Dynamic RAM 4M x 8 71C4400B GM23C410 64K x 8 BIT DYNAMIC RAM Dynamic RAM 64K x 1 static+ram+32kx8 STATIC+RAM+6264
Text: PRODUCT INDEX DRAM GM71C1000B/BL GM71C4256B/BL GM71C4100B/BL GM71C4100C/CL GM 71C41OOD/DL GM 71C4400B/BL GM 71C4400C/CL GM 71C4400D/DL GM71C S 4800A/AL GM71C(S)4260A/AL GM71C(S)4270A/AL GM 71C(S)4170A/AL GM71C16100A GM71C16400A GM71C17400A GM 71C(S) 16160 A/AL
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GM71C1000B/BL
GM71C4256B/BL
GM71C4100B/BL
GM71C4100C/CL
71C41OOD/DL
71C4400B/BL
71C4400C/CL
71C4400D/DL
GM71C
800A/AL
4170A
mask ROM
Dynamic RAM 4M x 8
71C4400B
GM23C410
64K x 8 BIT DYNAMIC RAM
Dynamic RAM 64K x 1
static+ram+32kx8
STATIC+RAM+6264
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GM71C4400
Abstract: 71c4400 M71C4400
Text: 71C4400C/CL LG Semicon Co.,Ltd. 1,048,576 W ORDS x 4BIT CMOS DYNAM IC RAM Description Features The G M 71C4400C/CL is the new generation dynamic RAM organized 1,048,576 x 4 bit. G M 71C4400C/CL has realized higher density, higher performance and various functions by utilizing
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GM71C4400C/CL
71C4400C/CL
300mil
20pin
400mil
GM71C4400
71c4400
M71C4400
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GM7IC4400
Abstract: GM71C4400 71C4400 GM71C4400C/CL
Text: 71C4400C/CL LG Semicon Co.,Ltd. 1,048,576 W ORDS x 4BIT CM OS DYNAM IC RAM Description Features The GM 71C4400C/CL is the new generation dynamic RAM organized 1,048,576 words x 4 bit. 71C4400C/CL has realized higher density, higher performance and various functions by
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GM71C4400C/CL
71C4400C/CL
GM71C4400C/CL
300mi!
300mil
GM7IC4400
GM71C4400
71C4400
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GMM791000CNS
Abstract: CNS70
Text: GM M791000CN S-60/70/80 LG Semicon Co.,Ltd. Description The GM M 791000CNS is an 1M x 9 bits Dynamic RAM Module which is assembled 2 pieces of 4M bit DRAM GM 71C4400CJ, 1M x4 sealed in 20 pin SOJ package and lM x l DRAM m 20 pin SOJ package. The GM M 791000CNS is a socket type memory
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M791000CN
S-60/70/80
791000CNS
71C4400CJ,
GMM791000CNS
GMM791000CNS
CNS70
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71C4400DJ
Abstract: No abstract text available
Text: GMM791000DNS-60/70/80 LG Semicon Co.,Ltd. Features Description The G M M 791000DNS is an 1M x 9 bits Dynamic RAM Module which is assembled 2 pieces of 4M bit DRAM G M 71C4400DJ, 1M x4 sealed in 20 pin SOJ package and lM x l DRAM in 20 pin SOJ package. The
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GMM791000DNS-60/70/80
791000DNS
71C4400DJ,
791OOODNS
GMM791000DNS
71C4400DJ
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71C4400
Abstract: GMM791100BNS70 71C4400Bj
Text: » G M M 791 lOOBNS-60/70/80 1,048,570 w o r d s x 9 b i t LG Semicon Co.,Ltd. CMOS DYNAMIC RAM MODULE Features Description The GM M 791100BNS is an 1M x 9 bits Dynamic RAM Module which is assembled 2 pieces of 4M bit DRAM G M 71C4400BJ, 1M x 4 sealed in 20 pin SOJ package and 1M bit
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lOOBNS-60/70/80
791100BNS
71C4400BJ,
GMM7911OOBNS
GMM791100BNS
GMM7911OOBNS
71C4400
GMM791100BNS70
71C4400Bj
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gm71c4400b
Abstract: No abstract text available
Text: 71C4400B/BL GoldStar 1,048,576 WORDS x 4 BIT GOLDSTAR ELECTRON CO., LTD. CMOS DYNAMIC RAM Description Features • • • • T h e G M 7 1 C 4 4 0 0 B /B L is t h e n e w g e n e r a t i o n d y n a m ic RAM o rg a n iz e d 1 ,0 4 8 ,5 7 6 x 4 G M 7 1 C 4 4 0 0 B /B L h a s r e a l iz e d
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GM71C4400B/BL
GMM71C4100BR/BLR
GM71C4400BT/BLT
031MIN
gm71c4400b
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IN4010
Abstract: No abstract text available
Text: LG Semicon. Co. LTD Description Features The GMM781000ENS is an 1M x 8 bits Dynamic RAM Module which is assembled 2 pieces of 4M bit DRAM 71C4400EJ, 1M x4 sealed in 20 pin SOJ package. The GMM781000ENS is a socket type memory module, suitable for easy change or addition
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GMM781000ENS
GM71C4400EJ,
GMM781000ENS
GM71C4400EJ
781000ENS-60
781000ENS-70
781000ENS-80
IN4010
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GM71C18160AJ7
Abstract: GM71C4260AJ70 GM71C4400BJ60 GM71C4400BJ70 gm71c4100cj60 GM71C1000BJ70 GM76C256ALL-70 GM76C256BLLFW70 GM71C4100BJ70 GM76C88ALFW15
Text: MEMORY LINE-UP l.D R A M I IM H — I IMxl |- h GM71C1000B-60 ZZH H I GM71C 1OO0BJ-60 GM71C 1000BZ-60 UH GM71C 100OBL-6O I GM71C 1000BLJ-60 GM71C1000BLZ-60 — I 256Kx4 [~ H GM71C4256B-60 H GM71C4236BJ-60 I GM7IC42Î6BL-60 GM71C4256BU-60 GM 71C4256BLZ-60 I
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GM71C1000B-60
GM71C
1OO0BJ-60
1000BZ-60
100OBL-6O
1000BLJ-60
GM71C1000BLZ-60
GM71C18160AJ7
GM71C4260AJ70
GM71C4400BJ60
GM71C4400BJ70
gm71c4100cj60
GM71C1000BJ70
GM76C256ALL-70
GM76C256BLLFW70
GM71C4100BJ70
GM76C88ALFW15
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GM71C4400AJ/ALJ-80
Abstract: No abstract text available
Text: GMM7321000SG-60/70/80 1,048,576 WORDS x 32 BIT GoldStar GMM7322000SG-60/70/80 GOLDSTAR ELECTRON CO. LTD. 2,097,152 WORDS x 32 BIT CMOS DYNAMIC RAM MODULE Description Features The GMM7321000SG is a 1M x 32 bits dynamic RAM MODULE which is assembled 8 pieces of
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GMM7321000SG-60/70/80
GMM7322000SG-60/70/80
GMM7321000SG
GMM7322000SG
MAX42
MIN100
MAX10
GM71C4400AJ/ALJ-80
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GM71C4400B
Abstract: GM71C4400 gm71c4400bz CM71C4400
Text: 71C4400B/BL LG Semicon Co.,Ltd. 1,048,576 W O R D S x 4B IT C M O S D Y N A M IC R A M Description Features T he G M 7 1C 4400B /B L is the new generation dynam ic R A M organized 1,048,576 x 4 bit. G M 71C 4400B /B L has realized higher density, higher
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GM71C4400B/BL
4400B
20pin
GM71C4400B
GM71C4400
gm71c4400bz
CM71C4400
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tr/R74A/7401000SG
Abstract: No abstract text available
Text: GMM7401000SG-60/70/80 GoldStar GOLDSTAR ELECTRON CO-LTD. 1,048,576 WORDS x 40 BIT GMM7402000SG-60/70/80 2,097,152 WORDS x 40 BIT CMOS DYNAMIC RAM MODULE Description Features The GMM7401000SG is a 1M x40 bits dynamic RAM MODULE which is assembled 10 pieces of
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GMM7401000SG-60/70/80
GMM7402000SG-60/70/80
GMM7401000SG
GMM7402000SG
7401000SG
7402000SG
GMM7401000SG
GMM7402000SG
MAX42
MIN100
tr/R74A/7401000SG
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gm71c4400az
Abstract: No abstract text available
Text: T sg r 71C4400A/AL G oldStar 1,048,576 WORDS x 4 BIT CMOS DYNAMIC RAM GOLDSTAR ELECTRON CO., LTD. Description Features The 71C4400A/AL is the new generation dy nam ic RAM organized 1 ,0 4 8 ,5 7 6 x 4 Bit. 71C4400A/AL has realized higher density, higher performance and various functions by uti
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GM71C4400A/AL
GM71C4400A/AL
300-mil
20-pin
400-mil
300-mil
gm71c4400az
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GM76C256all
Abstract: 16M-DRAM LT-860 GM23C400 GM76C28A GM23C810QA-12 LR-80 BFW12 GM23C8001 GM23C410
Text: FUNCTION GUIDE DRAM Capacity 1MBit Org 1W0 Type No 4Wt1 1Mk4 Current mA Power Supply Feature Package (m il) Avail 18DIP(300) NOW tCAC tA A Active S/B GM71C1000B/BJ/BZ-60 GM71C10008/BJ/BZ-70 GM71C 10OÛB/BJ/BZ-ÔO 60 70 80 20 20 25 30 35 40 90 eo 70 1 GM71C10006UBLJ/BLZ-60
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GM71C1000B/BJ/BZ-60
GM71C10008/BJ/BZ-70
GM71C
GM71C10006UBLJ/BLZ-60
GM71C10006UBLJ/BLZ-70
GM71C10006UBLJ/BLZ-80
351MxB
GM23C8000A/AF
32DIP
32SOP
GM76C256all
16M-DRAM
LT-860
GM23C400
GM76C28A
GM23C810QA-12
LR-80
BFW12
GM23C8001
GM23C410
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71c4400
Abstract: elis 1024 cmos GM71C4400E/EL-60
Text: GM71C440OE/EL LG Semicon Co., Ltd. 1,048,576 WORDS x 4BÎT CMOS DYNAMIC RAM Description Features The GM71C440QE/EL is the new generation dynamic RAM organized 1,048,576 words x 4 bit. 71C4400E/EL has realized higher density, higher performance and various functions by
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GM71C440QE/EL
GM71C4400E/EL
300mil
71C4400E/E
71c4400
elis 1024 cmos
GM71C4400E/EL-60
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71c4400
Abstract: GM71C4400 b8555 tv lg EL60
Text: @ LG Semicon. Co. LTD Description Features The 71C4400E/EL is the new generation dynamic RAM organized 1,048,576 x 4 bit. 71C4400E/EL has realized higher density, higher performance and various functions by utilizing advanced CMOS p ro c ess te c h n o lo g y . The
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GM71C4400E/EL
300mil
20pin
71c4400
GM71C4400
b8555
tv lg
EL60
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GoldStar gm71c4400aj
Abstract: No abstract text available
Text: GMM781000N S-60/70/80 GoldStar GOLDSTAR ELECTRON XX, LTD. 1,048,576 WORDS x 8 BIT CMOS DYNAMIC RAM MODULE Description Features The GMM781000NS is a 1M x 8 bits Dynamic RAM Module, mounted 2 pieces of 4M bit DRAM (71C4400AJ, 1M x 4 sealed in 20 pin SOJ package. The GMM781000NS is a socket type
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GMM781000N
S-60/70/80
GMM781000NS
GM71C4400AJ,
GM71C4400AJ
GoldStar gm71c4400aj
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GM7IC
Abstract: No abstract text available
Text: 71C4400A/AL P2J G o l d S t a r iBBA GOLDSTAR ELECTRON CO., LTD. 1,048,576 WORDS x 4 BIT CMOS DYNAMIC RAM Description Features The 71C4400A/AL is the new generation dy nam ic RAM organized 1 ,0 4 8 ,5 7 6 x 4 Bit. 71C4400A/AL has realized higher density
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GM71C4400A/AL
GM71C4400A/AL
300-mil
20-pin
400-mil
300-mil
GM7IC
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TCA 120
Abstract: M7810
Text: GMM781000CNS-60/70/80 LG Semicon Co.,Ltd. Description 1,048,576 W O R D S x 8 BIT CMOS DYNAMIC RAM MODULE Features • H igh D ensity Standard 30 pin m ounting 2 pcs o f 4M D R A M G M 71C 4400C J SO J • Fast Page M ode Capability • Single Pow er Supply
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GMM781000CNS-60/70/80
4400C
781000C
GMM781000CNS
TCA 120
M7810
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GM71C4400BJ70
Abstract: GM71C4400BLT70 GM71C4100CJ60 GM76C256BLL-70 GM76C8128ALLFW70 GM71C4100CJ70 1gm7 GM76C256BLL70 GMM7362000BSG-70 76C256
Text: MEMORY LINE-UP 1. DRAM 60ns IM IM xl GM 71C1000B-70 G M 7IC1000BJ-60 GM7 ] C 1OOOBJ-70 G M 7 1C 1OOOBJ-80 GM 71C1000BZ-60 GM 71C1000BZ-70 - 1 GM 71C1000BZ-80 GM71C1000HI,-60 > - ŒGM 71C1000BI.-70 M 71C1000BL-80 GM71C1000BLZ-60 GM71CIOO0BI.Z-70 G M 7IC I000H iy.-80
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71C1000B-70
1OOOBJ-70
71C1000BZ-70
71C1000B-80
1OOOBJ-80
71C1000BZ-80
71C1000BL-80
1000B
I000H
GM71C1000B-60
GM71C4400BJ70
GM71C4400BLT70
GM71C4100CJ60
GM76C256BLL-70
GM76C8128ALLFW70
GM71C4100CJ70
1gm7
GM76C256BLL70
GMM7362000BSG-70
76C256
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