7 AMPS PNP TRANSISTOR Search Results

7 AMPS PNP TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

7 AMPS PNP TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
B1216 Abstract: No abstract text available Text: Spec. No. : C811J3 Issued Date : 2008.12.10 Revised Date : 2009.02.04 Page No. : 1/7 CYStech Electronics Corp. PNP Epitaxial Planar High Current High Performance Transistor BTB1216J3 BVCEO IC RCE(SAT) -140V -4A 90mΩ typ. Features • 4 Amps continuous current, up to 10 Amps peak current	Original	PDF	C811J3 BTB1216J3 -140V O-252 UL94V-0 B1216
MJL3281A Abstract: No abstract text available Text: MJL3281A NPN MJL1302A (PNP) Preferred Devices Complementary NPN−PNP Silicon Power Bipolar Transistors The MJL3281A and MJL1302A are PowerBaset power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency	Original	PDF	MJL3281A MJL1302A MJL3281A MJL1302A
MJW1302A Abstract: MJW3281A NPN 200 VOLTS 20 Amps POWER TRANSISTOR Text: MJW3281A NPN MJW1302A (PNP) Preferred Devices Complementary NPN-PNP Silicon Power Bipolar Transistors The MJW3281A and MJW1302A are PowerBase t power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency	Original	PDF	MJW3281A MJW1302A MJW3281A MJW1302A r14525 MJW3281A/D NPN 200 VOLTS 20 Amps POWER TRANSISTOR
MJW-1302A Abstract: NPN 200 VOLTS 20 Amps POWER TRANSISTOR 10000 npn MJW1302A MJW3281A Text: MJW3281A NPN MJW1302A (PNP) Preferred Devices Complementary NPN-PNP Silicon Power Bipolar Transistors The MJW3281A and MJW1302A are PowerBase t power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency	Original	PDF	MJW3281A MJW1302A MJW3281A MJW1302A r14525 MJW3281A/D MJW-1302A NPN 200 VOLTS 20 Amps POWER TRANSISTOR 10000 npn
NPN 200 VOLTS 20 Amps POWER TRANSISTOR Abstract: NPN 1.5 AMPS POWER TRANSISTOR MJW-1302A Text: MJW3281A NPN MJW1302A (PNP) Preferred Devices Complementary NPN−PNP Silicon Power Bipolar Transistors The MJW3281A and MJW1302A are PowerBase t power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency	Original	PDF	MJW3281A MJW1302A MJW3281A MJW1302A NPN 200 VOLTS 20 Amps POWER TRANSISTOR NPN 1.5 AMPS POWER TRANSISTOR MJW-1302A
Untitled Abstract: No abstract text available Text: MJL3281A NPN MJL1302A (PNP) Preferred Devices Complementary NPN−PNP Silicon Power Bipolar Transistors The MJL3281A and MJL1302A are PowerBaset power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency	Original	PDF	MJL3281A MJL1302A MJL3281A MJL1302A MJL3281A/D
Untitled Abstract: No abstract text available Text: MJL3281A NPN MJL1302A (PNP) Preferred Devices Complementary NPN−PNP Silicon Power Bipolar Transistors The MJL3281A and MJL1302A are PowerBaset power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency	Original	PDF	MJL3281A MJL1302A MJL3281A MJL1302A MJL3281A/D
NSP5665 Abstract: sat 1205 Text: Bipolar Power Transistors Page 1 of 12 Next Page Home Package Device Type VCEO sus Volts IC (max) Amps PD@ 25° C Watts fT MHZ NPN TO-39 2N1479 * 40 1.5 20/60@.2/4 1.4@.2/.02 5 1.5 NPN TO-39 2N1480 * 55 1.5 20/60@.2/4 1.4@.2/.02 5 1.5 NPN TO-39 2N1481 *	Original	PDF	2N1479 2N1480 2N1481 2N1482 2N1483 2N1484 2N1485 2N1486 O-254 NSP6340 NSP5665 sat 1205
Untitled Abstract: No abstract text available Text: MJW3281A NPN MJW1302A (PNP) Preferred Devices Complementary NPN−PNP Silicon Power Bipolar Transistors The MJW3281A and MJW1302A are PowerBase t power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency	Original	PDF	MJW3281A MJW1302A MJW3281A MJW1302A MJW3281A/D
MJL1302A Abstract: MJL1302AG MJL3281A MJL3281AG complementary npn-pnp Text: MJL3281A NPN MJL1302A (PNP) Preferred Devices Complementary NPN−PNP Silicon Power Bipolar Transistors The MJL3281A and MJL1302A are PowerBaset power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency	Original	PDF	MJL3281A MJL1302A MJL3281A MJL1302A MJL3281A/D MJL1302AG MJL3281AG complementary npn-pnp
GT30F124 Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	PDF	2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
MJW21194 Abstract: MJW21193 Text: MJW21193 PNP MJW21194 (NPN) Preferred Devices Silicon Power Transistors The MJW21193 and MJW21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com	Original	PDF	MJW21193 MJW21194 MJW21193 MJW21194 r14525 MJW21193/D
MJE15034 Abstract: mje1503x mje15035 Text: MJE15034 NPN, MJE15035 PNP Preferred Device Complementary Silicon Plastic Power Transistors TO−220, NPN & PNP Devices http://onsemi.com . . . designed for use as high−frequency drivers in audio amplifiers. • hFE = 100 Min @ IC = 0.5 Adc • • •	Original	PDF	MJE15034 MJE15035 O-220, MJE15034, O-220AB Emitter-Ba25 MJE15034 MJE15035 mje1503x
Untitled Abstract: No abstract text available Text: MJW3281A NPN MJW1302A (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors The MJW3281A and MJW1302A are PowerBase t power transistors for high power audio, disk head positioners and other linear applications. Features • Designed for 100 W Audio Frequency	Original	PDF	MJW3281A MJW1302A MJW3281A MJW1302A MJW3281A/D

MJW1302A Abstract: MJW1302AG MJW3281A MJW3281AG complementary npn-pnp power transistors TO-247 Text: MJW3281A NPN MJW1302A (PNP) Preferred Devices Complementary NPN−PNP Silicon Power Bipolar Transistors The MJW3281A and MJW1302A are PowerBase t power transistors for high power audio, disk head positioners and other linear applications. Features • Designed for 100 W Audio Frequency	Original	PDF	MJW3281A MJW1302A MJW3281A MJW1302A O-247 MJW3281A/D MJW1302AG MJW3281AG complementary npn-pnp power transistors TO-247
complementary npn-pnp power transistors Abstract: MJW1302A MJW1302AG MJW3281A MJW3281AG Text: MJW3281A NPN MJW1302A (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors The MJW3281A and MJW1302A are PowerBase t power transistors for high power audio, disk head positioners and other linear applications. Features • Designed for 100 W Audio Frequency	Original	PDF	MJW3281A MJW1302A MJW3281A MJW1302A O-247 MJW3281A/D complementary npn-pnp power transistors MJW1302AG MJW3281AG
2N5940 Abstract: 2N5928 2N597 2N5867 2NXXXX 2n5870 2N6030 2N5733 2N5734 2N5738 Text: 8254022 S IL IC O N TRANS IS T O R CORP NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued "flö Ô8D 0 0 7 9 6 . DE \| f l a S 4 D E S DDDOTTt. 3 ,D . . T - \|~~ lc Max Amps VCEO(SUS) Polarity 2N5733 2N5734 2N5737 2N5738 2N5739 NPN NPN PNP PNP	OCR Scan	PDF	2N5733 2N5734 2N5737 2N5738 2N5739 2N5740 2N5741 2N5742 2N5743 2N5744 2N5940 2N5928 2N597 2N5867 2NXXXX 2n5870 2N6030
2n5347 Abstract: a/TO111 2n5100 Text: 8254022 S I L I CON T R A N S I S T O R CORP 88D 0 0 7 9 4 “ûû D Ì T \| a 2 5 4 0 2 2 00007=14 0 NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued Polarity lc Max Amps 2N4999 2N5000 2N5001 2N5002 2N5003 PNF NPN PNP NPN PNP 2.0 2.0 2.0 5,0	OCR Scan	PDF	2N4999 2N5000 2N5001 2N5002 2N5003 O-111 2N5004 2N5005 2N5006 2n5347 a/TO111 2n5100
ZTX751 Abstract: ZTX651 ZTX551 ZTX753 ZTX337 ZTX452 MPSA06 MPSA56 ZTX453 ZTX454 Text: TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 2 amps with power dissipation capabilities in excess of 1000 mW at 25°C ambient temperature. Typical application areas include: Audio Frequency Drivers and Output Stages, Relay Switching, etc.	OCR Scan	PDF	ZTX455 ZTX454 ZTX653 ZTX753 ZTX453 ZTX652 ZTX552 ZTX452 MPSA56 MPSA06 ZTX751 ZTX651 ZTX551 ZTX753 ZTX337 ZTX452 MPSA06
BC338C Abstract: ZTX452 MPSA06 MPSA56 ZTX453 ZTX454 ZTX455 ZTX651 ZTX652 ZTX653 Text: TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 2 amps with power dissipation capabilities in excess of 1000 mW at 25°C ambient temperature. Typical application areas include: Audio Frequency Drivers and Output Stages, Relay Switching, etc.	OCR Scan	PDF	ZTX455 ZTX454 ZTX653 ZTX753 ZTX453 MPSA55 ZTX750 ZTX550 BC327A BC327B BC338C ZTX452 MPSA06 MPSA56 ZTX651 ZTX652
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MJW21192/D SEMICONDUCTOR TECHNICAL DATA NPN MJW21192 Complementary Silicon Plastic Power Transistors PNP Specifically designed for power audio output, or high power drivers in audio amplifiers. • • • • DC Current Gain Specified up to 8.0 Amperes at Temperature	OCR Scan	PDF	MJW21192/D MJW21192 O-247AE MJW21191 340K-03 O-247AE)
Q4015T Abstract: NP5138 Q6015LT Q4006AT Q4004LT MPS930 44t transistor Q4006LT Text: TRANSISTOR PART No TYPE Pt @25°C Watts VCEO Volts VEBO Volts VCBO Volts Hfe \|ç a lc Amps Volts Hfe PACKAGE DESCRIPTION T 0 18 T 0 18 T 0 18 T 0 18 SGN SGN SGN SGN 0.20 0.50 0.50 0.50 0.05 0.80 0.80 0.80 15 30 30 40 3.0 5.0 5.0 6.0 30 60 60 75 20 25 50 50	OCR Scan	PDF	2N0918 2N2221 2N2222A 2N3646 2N3692 2N3702 2N3706 2N3709 2N3903 2N3904 Q4015T NP5138 Q6015LT Q4006AT Q4004LT MPS930 44t transistor Q4006LT
TRANSISTOR 2N4289 Abstract: Q4006at 2N2222A mps quadrac Q5010A NPN transistor 2n2222A Q4010LT 2N39Q3 Q6015A lora Text: LO RA S INDUSTRIES INC MEE D • 5500440 OGGDQET G H L O R A TRANSISTOR PART No TYPE PACKAGE T O - 1 8 Package 2N0918 2N2221 :2N2222 2N2222A NPN NPN NPN NPN DESCRIPTION Pt @25°C Watts !<¿ Amps -r - n~? i 1 t-U\ VEBO Volts VCEO Volts VCBO Volts Hfe Hfe \ç	OCR Scan	PDF	2N0918 2N2221 2N2222 2N2222A 2N3646 2N3692 2N3702 2N3706 2N3709 t0220ab/i TRANSISTOR 2N4289 Q4006at 2N2222A mps quadrac Q5010A NPN transistor 2n2222A Q4010LT 2N39Q3 Q6015A lora
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MJE15032/D SEMICONDUCTOR TECHNICAL DATA NPN M JE15032* Complementary Silicon Plastic Power Transistors PNP M JE15033* . . . designed for use as high-frequency drivers in audio amplifiers. • • • • DC Current Gain Specified to 5.0 Amperes	OCR Scan	PDF	MJE15032/D JE15032* JE15033* MJE15032, MJE15033 -220A MJE15032 21A-06 O-220AB

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7 AMPS PNP TRANSISTOR Search Results

7 AMPS PNP TRANSISTOR Result Highlights (5)

7 AMPS PNP TRANSISTOR Datasheets Context Search

B1216

MJL3281A

MJW1302A

MJW-1302A

NPN 200 VOLTS 20 Amps POWER TRANSISTOR

Untitled

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NSP5665

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MJL1302A

GT30F124

MJW21194

MJE15034

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MJW1302A

complementary npn-pnp power transistors

2N5940

2n5347

ZTX751

BC338C

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Q4015T

TRANSISTOR 2N4289

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