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    2N5100 Search Results

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    2N5100 Price and Stock

    Amphenol Corporation RJFTV2PE2N05100BTX

    Ethernet Cables / Networking Cables Threaded Sq Flange Rec Cordset 0.5m Nic
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    Mouser Electronics RJFTV2PE2N05100BTX
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    • 100 $93.82
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    Amphenol Corporation RJFTV2PEM2N05100BTX

    Ethernet Cables / Networking Cables Threaded Sq Flange Rec Cordset .5m
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    Mouser Electronics RJFTV2PEM2N05100BTX
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    • 100 $114.06
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    Harwin M80-7045105

    Power to the Board 51 WAY VERT FEMALE CONN +J/S
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    TTI M80-7045105 Tube 15
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    Harwin M80-7065105

    Power to the Board 51 WAY L/BORE CRIMP CONN +J/S
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    TTI M80-7065105 Tube 24
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    Harwin M80-7055105

    Power to the Board 51 WAY S/BORE CRIMP CONN +J/S
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    TTI M80-7055105 Tube 24
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    2N5100 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N5100 General Diode Silicon Power Transistors Scan PDF
    2N5100 High Voltage Semi-Conductor Specialists Silicon PNP Power Transistors Scan PDF
    2N5100 High Voltage Semi-Conductor Specialists Silicon PNP - Power Transistors Scan PDF
    2N5100 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N5100 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5100 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N5100 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    2N5100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2N5100 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)450 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC)175’ I(CBO) Max. (A)5.0nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF 2N5100 Freq20M

    10 35 DIODE

    Abstract: BFT19B diode 15 35
    Text: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 2N5282 STIP30 STIP305 TRSP3743 2N5345 MJE5730 MJE5730 MJE5730 g~~~~ 25 30 BST16 MJ5416 MJ5416 MM5416 MM5416 MM5416 ST5416 2N5416 +RSP5~~6 35 40 TRSP3006 TRSP30X TRSP30X TRSP30X5 TRSP30X5 TRLP3504 TRLP3504


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    PDF 37var 220AB 10 35 DIODE BFT19B diode 15 35

    2N5101

    Abstract: BUY46 BUW32 BUS13A BUV21 ISO BUZ171 equivalent BUY22 BUT51P BUX23 BUT13P
    Text: STI Type: 2N5050 Notes: Polarity: NPN Power Dissipation: 40 VCBO: 125 VCER: 125 ICBO: 125 ICBO ua: 500 hFE: 25 hFE A: 1.0 VCE: 1.0 VBE: 1.2 IC A: .75 COB: 250 fT: 10 Case Style: TO-213AA/TO-66 Industry Type: 2N5050 STI Type: 2N5052 Notes: *BVCEO Polarity: NPN


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    PDF 2N5050 O-213AA/TO-66 2N5052 2N5055 O-206AA/TO-18: 2N5056 2N5101 BUY46 BUW32 BUS13A BUV21 ISO BUZ171 equivalent BUY22 BUT51P BUX23 BUT13P

    2SK1411

    Abstract: 2SK1535 2SK1410 2SK1538 2SK1358 datasheet 2sk2082 2SK2397-01MR 2SK2475 2SK2370 2sk2225
    Text: STI Type: 2SK1358 Notes: Breakdown Voltage: 900 Continuous Current: 9 RDS on Ohm: 1.4 Trans Conductance Mhos: 2.0 Trans Conductance A: 4.0 Gate Threshold min: 1.5 Gate Threshold max: 3.5 Resistance Switching ton: 80 Resistance Switching toff: 200 Resistance Switching ID: 4.0


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    PDF 2SK1358 O-247 2SK1359 2SK1362 2SK2563 2SK2568 2SK1411 2SK1535 2SK1410 2SK1538 2SK1358 datasheet 2sk2082 2SK2397-01MR 2SK2475 2SK2370 2sk2225

    2N3743

    Abstract: 2N4930 2N4931 2N5096 2N5282
    Text: 3869720 G EN ER A L ' O I D D E CORP 07C 0 02 54 GENERAL DIODE CORP 07 D -p-33 - DE | 301^750 DDODSSM Ö | ~ SILICON N P N - Power Transistors rvP E i, M AX . TH ER M AL ;s Junction lo Cáse M AX. C O LL. DI SS. t< net A li 925* C A B S O L U T E M A X . R A T IN G S { » ' C .


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    PDF -p-33 lcs50MA trm7015 MD-14 trm7505 MO-14 trm8015 TRSP3014S TRSP3504 TRSP3514S 2N3743 2N4930 2N4931 2N5096 2N5282

    1040B

    Abstract: 2N3910 svt6062 2n5100
    Text: =1 TYPE 1015 NPN 1 GEOMETRY PHYSICAL CHARACTERISTICS 1. 2. 3. 4. Chip size. Chip hickness. Top metal. Back metal. 5. Backside. 6. Bonding pad. 2020 PNP 1. 2. 3. 4. Chip size. Chip thickness. Top metal.


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    PDF 1020B 15X19 3kA/10kA/I0kA 3kA/10kA/10kA 2N6674 2N6675 2N6676 2N6677 1040B 2N3910 svt6062 2n5100

    MD14

    Abstract: 2N3743 2N4930 2N4931 2N5091 2N5093 2N5094 2N5096 2N5100 2N5281
    Text: 4 4 7 1 0 7 8 HIGH VOLTAGE ~ 80 DOOODDb 7 fioft T-37-W . p SILICON PNP POWER TRANSISTORS - MAX. THERM AL RES. Junction to Case « io fC /W MAX. C O L L. M A X. in Free T Air $2 5 *C E M Pc R J ABSO LU TE MAX. RATINGS £ 25* C . piss. h FE MIN.) GBW BIAS


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    PDF 2N5091 2N5093 2N5094 2N5096 2N5100 2N3743 2N4930 2N4931 2N5281 2N5282 MD14

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    PDF

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


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    PDF AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    2n5347

    Abstract: a/TO111 2n5100
    Text: 8254022 S I L I CON T R A N S I S T O R CORP 88D 0 0 7 9 4 “ûû D Ì T | a 2 5 4 0 2 2 00007=14 0 NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued Polarity lc Max Amps 2N4999 2N5000 2N5001 2N5002 2N5003 PNF NPN PNP NPN PNP 2.0 2.0 2.0 5,0


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    PDF 2N4999 2N5000 2N5001 2N5002 2N5003 O-111 2N5004 2N5005 2N5006 2n5347 a/TO111 2n5100

    thyristor TAG 8506

    Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
    Text: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y


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    PDF 11PM104 thyristor TAG 8506 nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719