6T SRAM QUAL Search Results

ELECTRONIC DESIGNS INC 91 PAGE 343

Abstract: E2 SMD Transistor 5962-89598 EDI8810H EDI8810HL
Contextual Info: ^EDI _ EDI8810H/L Electronic Designs I n o Low Power 6T CMOS Monolithic SRAM 8Kx8 Static RAM CMOS, Low Power Monolithic Features The EDI8810H/L is a 65,653bit, 6 transistor cell C M O S Static R A M organized a s 8Kx8. Random A cce ss Memory It is available in both standard H and low power (L)

6T SRAM qual

Abstract: l0225 quality and reliability report 106 M1 A 1837 140C V121 V212 eprom 2808 634E-03
Contextual Info: Quality and Reliability Report 8.1 Device Reliability Test Data – SRAM, LOGIC, EPROM Hot Carrier Effect Test 1. SRAM Processes 1.1 0.4µm/3.3V SRAM DPDM Process Life Time 1st Qual. Lot 2nd Qual. Lot 3rd Qual Lot Pass/Fail 85.8 Years 72.7 Years 90.3 Years

interface 8KB ROM and 16KB RAM to 8051

Abstract: MPC89L58A interface 4KB ROM and 8KB RAM to 8051 Leaper-48 MPC82E52 MPC89E52 MPC89E52A MPC89L556 MPC89L52A PQFP44
Contextual Info: Megawin 80C51 MCU MEGA51 MEGA51) „ Features „ Products Select Table „ Get Benefit from Megawin „ Application „ Available Developing Toolkits „ Product Roadmap 1 Features „ Full line ISP supported, associated with excellent data endurance(100K)/retention(7Year)

transistor SMD wl3

Abstract: making code WL3 Micron 32MB NOR FLASH making WL3 PSRAM A191 A192 CY62147DV18 K6F1616R6C SRAM 4T cell
Contextual Info: TN-45-30: PSRAM 101 Introduction Technical Note PSRAM 101: An Introduction to Micron CellularRAM® and PSRAM Introduction The mobile phone market has become increasingly cost competitive, demanding interface innovations to support the low-cost requirements inherent in this market. Micron®

CMOS

Abstract: AF32K8AF25 NMOS native pspice model resistor bsim3 6T SRAM micron cmos sensor connection BSIM3 nmos transistor pmos Vt bsim3 model
Contextual Info: 0.25 m CMOS Process FC025 MIXED-SIGNAL FOUNDRY EXPERTS 0.25 Micron CMOS Technology Description Key Features Applications Quality Assurance Deliverables Digital Libraries Analog Libraries Primitive Devices The FC025 series is X-FAB’s 0.25-micron Modular

cemos

Contextual Info: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN DATE: January 29, 2000 PCN #: M0002-02 Product Affected: 79RC32V364-100 DA 79RC32V364-133 DA Manufacturing Location Affected: N/A MEANS OF DISTINGUISHING CHANGED DEVICES:

SSOP44

Abstract: M68300 M68HC16 TSM65686 16K16
Contextual Info: TSM65686 16K16 Very Low Power SRAM Introduction The TSM65686 is a very low power CMOS static RAM organized as 1638482 bits. It is manufactured using a high performance CMOS technology. With this process, TEMIC is the first to bring solutions for applications where fast computing is as mandatory as low

FIFOs FIFO Memory

Contextual Info: AN-16: USER-FRIENDLY FIFOS ARE IMMUNE TO SYSTEM NOISE Q User-Friendly FIFOs Are Immune to System Noise OVERVIEW QSI FI FOs have many design enhancements to make them easier to use. Glitch filters reduce the FIFO's sensitivity to system noise. An im­ proved internal counter design and controlled

475 16K

Abstract: tsm65686
Contextual Info: Temic Semiconductors 16K X16 Very Low Power SRAM TSM65686 Introduction The TSM65686 is a very low power CMOS static RAM organized as 16384 X 8 X 2 bits. It is manufactured using a high performance CMOS technology. With this process, TEMIC is the first to bring solutions for

Contextual Info: Temic TSM65686 Semiconductors 16K X 16 Very Low Power SRAM Introduction The TSM65686 is a very low power CMOS static RAM organized as 1 6 3 8 4 x 8 x 2 bits. It is manufactured using a high performance CMOS technology. With this process, TEMIC is the first to bring solutions for

Contextual Info: Temic Semiconductors 16K X 16 Very Low Power SRAM TSM65686 Introduction The TSM65686 is a very low power CMOS static RAM organized as 16384x8x2 bits. It is manufactured using a high performance CMOS technology. With this process, TEMIC is the first to bring solutions for

smd transistor marking A14

Abstract: transistor smd zc ce JANM38510 smd transistor marking 3d smd transistor marking a7 smd transistor marking D9 SMD A8 Transistor smd transistor wc SRAM 8T 64K X 4 SRAM
Contextual Info: MICRON TECHNOLOGY INC 17 E D tlllSMI 0001Ö5M' 7 MICRON • MT5C2564 883C UCW*Cl<X.i It«' MILITARY SRAM 64K X 4 SRAM AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SMD 5962-88681 • JANM38510/293 « RAD-tolerant (consult factory) 24L/300 DIP

65609E

Abstract: M65609E
Contextual Info: M65609E 128 K  8 Very Low Power CMOS SRAM Rad Tolerant Introduction The M65609E is a very low power CMOS static RAM organized as 131072 x 8 bits. Atmel Wireless & Microcontrollers brings the solution to applications where fast computing is as mandatory as

Contextual Info: M65609E 128 K  8 Very Low Power CMOS SRAM Rad Tolerant Introduction The M65609E is a very low power CMOS static RAM organized as 131072 x 8 bits. TEMIC brings the solution to applications where fast computing is as mandatory as low consumption, such as aerospace electronics, portable instruments, or

MA31750 processor architecture

Abstract: atmel 80C32 atmel edac atmel 2816 memory mmu ericsson MA31750 6T SRAM a8961 microcontroller radiation hard SMKS-29C516E
Contextual Info: ANM052 Radiation Tolerant SRAM for SPACE Applications Introduction The purpose of this document is to analyze the selection criteria for memory chips to be used in Spacecraft computers. A general trend is to implement more autonomous functions in Spacecraft, making use of increased

temic 80C32

Abstract: mmu ericsson MA31750 processor architecture MA31750 80C32 Harris Semiconductor IDT39C60 65656F 29C516E microcontroller radiation hard 80C32E
Contextual Info: ANM052 Radiation Tolerant SRAM for SPACE Applications Introduction The purpose of this document is to analyze the selection criteria for memory chips to be used in Spacecraft computers. A general trend is to implement more autonomous functions in Spacecraft, making use of increased

32R2110

Abstract: 9022J sd94 32H4631 d0117 temperature controller using microcontroller 7107
Contextual Info: óécmóifskms A TDK Group/Company SSI 32C9024 Differential SCSi Combo Controller 80 Mbit/s: dual bit NRZ interface Preliminary Data January 1995 FEATURES DESCRIPTION The SSI 32C9024 is an advanced CMOS VLSI device which integrates m ajor portions of the hardware

MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Abstract: wireless keyboard mouse 8051 shugart 850 intel 945 motherboard repair mark 68m intel chipset 945 motherboard repair samsung 10K filing SEC Matsua LED playstation 2 usb adapter Nokia 1600 mobile phone
Contextual Info: 1 9 9 8 A N N U A L R E P O R T CORPORATE PROFILE Cypress Semiconductor Corporation, now in its second decade, provides a broad range of high-performance integrated circuits to leading computer, networking, and telecommunications companies worldwide. Cypress’s product line includes

Contextual Info: M65608E 128 K  8 Very Low Power CMOS SRAM Rad Tolerant Introduction The M65608E is a very low power CMOS static RAM organized as 131072 x 8 bits. TEMIC brings the solution to applications where fast computing is as mandatory as low consumption, such as aerospace electronics, portable instruments, or

M65656G

Contextual Info: M65656G 32 K  8 Very Low Power CMOS SRAM Rad Tolerant Introduction The M65656G is a very low power CMOS static RAM organized as 32768 x 8 bits. TEMIC brings the solution for applications where fast computing is as mandatory as low consumption, such as aerospace electronics, portable instruments or embarked

M65608E

Abstract: 65608E 5962-89598 Atmel 65608
Contextual Info: M65608E 128 K  8 Very Low Power CMOS SRAM Rad Tolerant Introduction The M65608E is a very low power CMOS static RAM organized as 131072 x 8 bits. Atmel Wireless & Microcontrollers brings the solution to applications where fast computing is as mandatory as

M65656G

Contextual Info: M65656G 32 K  8 Very Low Power CMOS SRAM Rad Tolerant Introduction The M65656G is a very low power CMOS static RAM organized as 32768 x 8 bits. Atmel Wireless & Microcontrollers brings the solution for applications where fast computing is as mandatory as

Contextual Info: ASi? MT5C6404 883C 16K x 4 SRAM A U S T I N S E M I C O N D U C T O R , INC. 16K X 4 SRAM SRAM AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SM D 5962-86859, 5962-89692 • M IL-STD -883 22-Pin DIP FEATURES • H ig h sp eed : 1 2 ,15, 2 0 ,2 5 and 35ns

three input OR gate

Abstract: CY7C1380av25
Contextual Info: 25 CY7C1380AV25 CY7C1382AV25 PRELIMINARY 512K x 36 / 1M x 18 Pipelined SRAM Features • • • • • • • • • • • Fast clock speed: 167, 150, 133, 100 MHz Provide high-performance 3-1-1-1 access rate Fast OE access times: 3.4, 3.8, 4.2, 5.0 ns